Abstract: A method includes placing a polisher head on platen, the polisher head including a set of first magnets, and controlling a set of second magnets to rotate the polisher head on the platen, wherein controlling the set of second magnets includes reversing the polarity of at least one second magnet of the set of second magnets to produce a magnetic force on at least one first magnet of the set of first magnets, wherein the set of second magnets are external to the polisher head.

Abstract: A skate blade alignment system used to align a skate blade sharpening system. The skate alignment system can align a grinding wheel for sharpening a skate blade secured within the skate blade sharpening system. A controller can enable alignment operations and control an alignment process.

Abstract: Methods and apparatuses for dispensing polishing fluids onto a polishing pad within a chemical mechanical polishing (CMP) system are disclosed herein. In particular, embodiments herein relate to a CMP polishing method including urging a substrate against a surface of a pad of a polishing system using a carrier assembly. A fluid is dispensed onto the pad from a fluid delivery assembly at a variable flow rate and a first flow rate of the variable flow rate is pulsed at a frequency and a duty cycle. The frequency refers to a number of pulses of the fluid at the first flow rate per rotation of the pad. The term duty cycle refers to a percentage of the pad exposed to fluid per rotation of the pad. The carrier assembly is translated across a surface of the pad while rotating the carrier assembly about a rotational axis.

Abstract: A pad conditioner for conditioning a polishing surface of a polishing pad includes a conditioning disk, a disk holder, and a disk arm. The conditioning disk includes a substrate plate and at least two abrasive segments. The conditioning disk includes at least one channel by which debris and spent slurry may be evacuated. The abrasive segments are on a surface of the substrate plate, and form at least one channel segment therebetween. Each channel segment extends from about the center of the surface to substantially the outer rim of the substrate plate. The disk holder to which the conditioning disk is mounted includes a through hole. The disk arm to which the conditioning disk is mounted includes an opening in fluid communication with the at least one channel segment via the through hole for evacuating the debris and spent slurry by a vacuum module.

Abstract: A chemical mechanical polishing (CMP) apparatus includes a polishing pad located on a top surface of a platen configured to rotate around a vertical axis passing through the platen, a wafer carrier configured to hold a substrate on a bottom surface thereof and to press the substrate on a top surface of the polishing pad, a slurry dispenser configured to dispense slurry over the top surface of the polishing pad, and a pad conditioning unit comprising a pad conditioning disk and a conditioning head configured to hold the pad conditioning disk. The conditioning head includes an electromagnet and the pad conditioning disk comprises a first ferromagnetic material portion configured to be attracted to the electromagnet when the electromagnet is energized.

Abstract: A polishing pad conditioning apparatus according to an example embodiment of the present inventive concept includes an apparatus body, a pivot arm provided on the apparatus body and including a housing having an internal space and provided at a distal end portion of the pivot arm and a head unit disposed at the distal end portion of the pivot arm. The head unit includes: a rotary motor provided in the internal space of the housing, the rotary motor including a rotary shaft; a foreign material blocking member connected to the rotary shaft; a disk holder connected to the rotary shaft; and a conditioning disk coupled to the disk holder. The foreign material blocking member includes a fluid flow groove configured to guide a movement of fluid for preventing foreign objects from entering the housing on an outer surface of the foreign material blocking member.

Abstract: Data received from an in-situ monitoring system includes, for each scan of a sensor, a plurality of measured signal values for a plurality of different locations on a layer. A thickness of a polishing pad is determined based on the data from the in-situ monitoring system. For each scan, a portion of the measured signal values are adjusted based on the thickness of the polishing pad. For each scan of the plurality of scans and each location of the plurality of different locations, a value is generated representing a thickness of the layer at the location. This includes processing the adjusted signal values using one or more processors configured by machine learning. A polishing endpoint is detected or a polishing parameter is modified based on the values representing the thicknesses at the plurality of different locations.

Abstract: The present invention provides a measurement device for grinding wheel. One or more thickness measurement device is disposed slidably on a platform. A spinning device is disposed on the platform. A grinding wheel is fixed on the spinning device. The spinning shaft spins the grinding wheel. The one or more thickness measurement device measures the flatness condition of the grinding wheel. Furthermore, according to the present invention, a diameter measurement device is disposed inside the platform and measures the roundness of the outer periphery of the grinding wheel. Since the structure can be disassembled easily, the whole measurement device for grinding wheel can be carried conveniently. In addition, measurements can be performed by users on the site where the grinding wheel is located for real-timely understanding the real size and wear condition of grinding wheel.

Abstract: A substrate polishing apparatus includes a polishing table 30 having a polishing surface 10 in the upper surface, a substrate holding portion 31 that holds a substrate W having a surface to be polished in the lower surface, and a holding portion cover 36 that covers the outer side of the substrate holding portion 31. Between the lower portion of the holding portion cover 36 and the upper surface of the polishing table 30, a gap portion for intake 37 is provided, and in the upper portion of the holding portion cover 36, a pipe for exhaust 39 connected to an exhaust mechanism 38 is provided. By operating the exhaust mechanism 38, a rising air current from the gap portion 37 toward the pipe 39 is formed between the outer surface of the substrate holding portion 31 and the inner surface of the holding portion cover 36.

Abstract: A method of shaping a cutting blade, includes a modified layer forming step of forming a plurality of modified layers at different heights within a dressing member by irradiating the dressing member with a laser beam having a wavelength transmissible through the dressing member from one surface of the dressing member a plurality of times while a focusing point of the laser beam is positioned within the dressing member, and a blade shaping step of shaping the cutting blade into a predetermined shape formed by the plurality of modified layers by cutting the dressing member by the cutting blade until the cutting blade reaches the modified layers after performing the modified layer forming step.

Abstract: A machine tool for multiple working for material removal from surfaces of bodies including a working station in which a plurality of rotary tools are positioned around a feed trajectory of said bodies; and guide means in which the bodies to be worked are made to translate one after another along said feed trajectory with a predetermined orientation position. At least one pair of rotary tools of said working station, intended to interact with the surfaces to be worked, inside slits in said bodies, in combination with each other and with guide means provided with partitions, help to keep said bodies in position during their related transit through said working station.

Abstract: One aspect of embodiment provides a wafer polishing chamber, including a wafer transfer part; a polishing part provided with an upper surface plate and lower surface plate, and configured to polish the wafer transferred from the wafer transfer part; a partition wall configured to separate positions where the transfer part and the polishing part are disposed; a plurality of fan units configured to introduce air; and a plurality of exhaust units configured to exhaust air, wherein the fan unit may be provided in at least one in an upper portion of the polishing part.

Abstract: An apparatus includes a slurry dispensing arm, multiple nozzles formed on the slurry dispensing arm, and a slurry supply module connected to the slurry dispensing arm. The slurry supply module is configured to provide slurry to the multiple nozzles and the multiple nozzles are configured to dispense the slurry.

Abstract: An equipment front end module interface of an equipment front end module including environmental controls. The equipment front end module interface includes a first mounting member configured to couple to a load lock assembly, and a flexible seal coupled to the first mounting member. The flexible seal provides sealing between the equipment front end module and the load lock assembly and also accommodates axial and other misalignment between the load lock assembly and the equipment front end module during assembly. Equipment front end modules including the equipment front end module interface and methods of assembling a load lock assembly to the equipment front end module using the equipment front end module interface are provided, as are other aspects.

Abstract: A method of using a chemical mechanical polishing (CMP)apparatus that includes a apparatus is provided. The method includes providing a conditioning disc for conditioning the polishing pad, where the conditioning disc includes a plurality of portions of subsystem discs. The portions may be regions of the disc that are concentric. Each portion of the disc is operable to rotate at a different angular velocity. In some embodiments, a different applied loading is provided to each of the portions of the disc in addition to or in lieu of the different angular velocities.

Abstract: A method of polishing a semiconductor wafer includes simultaneous double-side polishing the wafer in a gap of a polishing device between a lower polishing plate covered with a lower polishing pad and upper polishing plate covered with an upper polishing pad while supplying a polishing agent. A first of the upper and lower polishing pads is dressed using a dressing tool. The dressing tool is mounted in the gap so that it extends from the inner edge to the outer edge of the first polishing pad. The distance between the dressing tool and a second of the upper and lower polishing pads at the inner edge of the second polishing pad differs from a corresponding distance at the outer edge of the second polishing pad. After the dressing, the at least one semiconductor wafer in the gap is polished.

Abstract: A grinding device includes a dresser head (7) at the front end of a spindle (1), and a dresser tool (8) mounted on the dresser head (7) for dressing the grinder (6). The dresser tool (8) is configured such that while the workpiece (W) is being ground by the grinder (6), the dresser tool (8) is out of contact with the grinder (6), and while the grinder (6) is being dressed by the dresser tool (8), the chuck (3) is out of contact with the grinder (6). Thus it is possible to press the dresser tool (8) against the grinder (6) using relative movement between the spindle (1) and the grinder shaft (4). The dresser head (7) can be rotated by rotating the spindle (1). The grinder (6) can thus be dressed without the need to mount the dresser tool (8) every time the grinder is to be dressed.

Abstract: A multi-carriage dual-spindle symmetrical grinding processing center, wherein: A work table with a rotary table therein is positioned on a first carriage which is attached to a front base; first and second upright posts are positioned in a gantry form on a back base; a horizontal grinding head is connected to a second carriage between the upright posts; a third left carriage and a third right carriage are slidingly connected to the first and second upright posts, respectively, and a left slider and a right slider are connected to the third left carriage and the third right carriage, respectively; a vertical grinding head is installed at the front end of the right slider; an automatic tool changing device is equipped with the vertical grinding head, and a grinding wheel profile dressing device can be installed on the second carriage and on the left slider.

Abstract: The present invention relates to a polishing apparatus for polishing an object to be polished (substrate) such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table configured to support a polishing pad, a polishing head having a top ring configured to press an object to be polished against the polishing pad while the object to be polished is rotated, and a dresser head having a dresser configured to dress the polishing pad. The polishing apparatus has a head cover having a purge gas introducing unit configured to introduce a purge gas into the head cover and an exhausting unit configured to exhaust the interior of the head cover. The pressure in the head cover is set to a pressure level slightly higher than the pressure outside the head cover, and main components of the polishing head are housed in the head cover.

Abstract: A polishing module including a chuck having a substrate receiving surface and a perimeter, and one or more polishing pads positioned about the perimeter of the chuck, wherein each of the one or more polishing pads are movable in a sweep pattern adjacent the substrate receiving surface of the chuck and are limited in radial movement to about less than one-half of the radius of the chuck measured from the perimeter of the chuck.

Abstract: A machining apparatus has a frame carrying a headstock capable of gripping one end of an elongated workpiece and rotating the workpiece about a machining axis. A turntable support is spaced axially from the headstock on the frame. A tailstock carried on the support can be aligned with the machining axis in a machining position of the support. A machining drive is carried on the frame and itself carries a rotatable grinding disk engageable radially of the machining axis with the workpiece when the workpiece is engaged between the headstock and tailstock. A dressing tool carried on the support axially offset from the support axis and angularly offset about the support axis from the tailstock is engageable in a dressing position of the support with the grinding disk for dressing same in the dressing position with the workpiece engaged between the headstock and tailstock.

Abstract: A trimming apparatus for trimming two working layers, including bonded abrasive applied on mutually facing sides of an upper and a lower working disk of a grinding apparatus configured for simultaneous double-side processing of flat workpieces includes a trimming disk, a plurality of trimming bodies and an outer toothing, where the trimming bodies are configured to release abrasive substances upon contract with the working layers so as to effect material removal from the working layers. At least 80% of the area of the trimming bodies configured to come into contact with the working layers is arranged within a ring-shaped region on the trimming disk. The width of the ring-shaped region is between 1-25% of the diameter of the trimming disk and the area of the trimming bodies which comes into contact with the working layers occupies 20-90% of the total area of the ring-shaped region.

Abstract: Provided is a gear grinding method capable of improving processing accuracy and easily adjusting the crowning shape by simplifying a processing operation. To this end, a work piece (W) is ground by a gear-shaped grinding stone (11) having a drum shape such that crowning along a tooth trace direction is applied to the work piece (W) by applying a relative feed in a feed direction (D1) that intersects a work piece rotation axis (C1) at a predetermined first diagonal angle (?1) between the work piece (W) and the gear-shaped grinding stone (11) while the work piece (W) and the gear-shaped grinding stone (11) are synchronously rotated in the state of being engaged so as to have a predetermined crossed axes angle (?), and the curvature in a grinding stone width direction, which defines the drum shape of the gear-shaped grinding stone (11), and the first diagonal angle (?1) are set according to the crowning shape of the work piece (W).

Abstract: The system for machining the bottom of skis comprises a machine frame, in which a ski is stationary supported by roller carriers. The machining is performed by machining tools on a carriage, which extends throughout under the ski. During the machining, the carrier rollers that are alternately arranged behind each other, take over the support of the ski. There are always so many carrier rollers directly under the ski that its bottom remains in a stationary position.

Abstract: A chemical mechanical polishing (CMP) conditioner includes a ceramic substrate having a major surface, and an abrasive coating overlying the major surface. The major surface can include micro-protrusions arranged in a curved pattern. Alternatively, the micro-protrusions can be arranged in an irregular pattern.

Abstract: Among other things, one or more systems and techniques for increasing temperature for chemical mechanical polishing (CMP) are provided. For example, a liquid heater component is configured to supply heated liquid to a polishing pad upon which a semiconductor wafer is to be polished, resulting in a heated polishing pad having a heated polishing pad temperature. The increased temperature of the heated polishing pad increases oxidation of the semiconductor wafer, which improves a CMP removal rate of material from the semiconductor wafer due to a decreased oxidation timespan and a stabilization timespan for reaching a stable CMP removal rate during CMP. In this way, the semiconductor wafer is polished utilizing the heated polishing pad, such as by a tungsten CMP process.

Abstract: A device for phasing a threaded grinding stone is phased with respect to a workpiece or a disk dresser prior to the engagement of the threaded grinding stone with the workpiece or with the disk dresser during grinding or dressing. In performing this phasing, it is detected, by means of an AE fluid sensor provided to a grinding stone head which rotatably supports the threaded grinding stone, whether the threaded grinding stone has had contact with the workpiece or the disk dresser. Subsequently, on the basis of the phase of the threaded grinding stone at the time when contact was detected, the threaded grinding stone is positioned in a phase where the aforementioned engagement is feasible.

Abstract: A planarization device includes a planarization pad and a pad conditioner over the planarization pad. The pad conditioner includes a rotatable plate having a lower surface separated from an upper surface of the planarization pad by a predetermined distance and at least one nozzle opening on the lower surface of the rotatable plate.

Abstract: Embodiments of mechanisms for performing a chemical mechanical polishing (CMP) process are provided. A method for performing a CMP process includes polishing a wafer by using a polishing pad. The method also includes applying a cleaning liquid jet on the polishing pad to condition the polishing pad. A CMP system is also provided.

Abstract: Dual dressing systems for conditioning CMP pads, including associated methods, are provided. In one aspect, for example, a method of dressing a CMP pad can include applying a deglazing dresser to a working surface of a CMP pad, deglazing the working surface of the CMP pad with the deglazing dresser, applying an asperity-forming dresser to the working surface of the CMP pad, and forming asperities in the working surface of the CMP pad with the asperity-forming dresser.

Abstract: Provided is an apparatus for polishing a wafer. The apparatus for polishing a wafer include a surface plate, a polishing pad disposed on the surface plate, the polishing pad including a plurality of fixed polishing particles, a head part disposed on the polishing pad, a retainer mounted on an outer surface of the head part, and a dressing part mounted a lower end of the support part, the dressing part having a ring shape.

Abstract: The disclosed embodiments relate generally to methods for creating smooth cosmetic surfaces along small features of an electronic device. The disclosed embodiments are well suited for reaching surfaces disposed in constrained spaces. More specifically a method for finishing a workpiece is described. For example, the method may be employed to finish an inlet portion of a cable connector. The method may involve the use of an abrasive brush which may include a single filament and abrasive particles coupled thereto, which can be configured to provide any number of different surface geometries during a finishing operation.

Abstract: A dressing apparatus capable of bringing an overall dressing surface of a dresser into uniform sliding contact with a polishing surface of a polishing pad and capable of uniformly dressing the overall polishing surface of the polishing pad is disclosed. The dressing apparatus includes a dresser configured to rub against a polishing surface to dress the polishing surface that is used for polishing a substrate, a dresser shaft that applies a load to the dresser, at least one load-applying device configured to apply a downward load to a part of a peripheral portion of the dresser, and an operation controller configured to control operation of the load-applying device.

Abstract: The method includes: calculating an increment of a sliding distance of a dresser by multiplying a relative speed between the dresser and a polishing member by a contact time between them; correcting the increment of the sliding distance by multiplying the calculated increment of the sliding distance by at least one correction coefficient; calculating the sliding distance by repeatedly adding the corrected increment of the sliding distance to the sliding distance according to elapse of time; and producing the sliding-distance distribution of the dresser from the obtained sliding distance and a position of a sliding-distance calculation point. The at least one correction coefficient includes an unevenness correction coefficient provided for the sliding-distance calculation point.

Abstract: A grinding machine includes: a grinding wheel of which movement in an X direction and a Z direction is controlled and that grinds a workpiece; and a truing unit that is installed at a predetermined position and that trues a machining surface of the grinding wheel. The truing unit includes: a movable table that is installed to be movable in the X direction relative to a support member; a truer that is rotatably installed in the movable table and that trues the machining surface of the grinding wheel; and an X-direction pressing mechanism that presses the truer in the X direction along with the movable table.

Abstract: A method for removing polishing byproducts and a polishing device are provided. The method includes mounting a positive electrode on the center of a polishing platen and a negative electrode on an edge of the polishing platen, applying a voltage between the positive electrode and the negative electrode after a polishing process for metal is finished, and rotating the polishing platen and rinsing a polishing pad with deionized water or a chemical cleaning solution to remove polishing byproducts that are formed in the polishing process. The combination of the centrifugal force and the electromotive force increases the removal rate of the polishing byproducts.

Abstract: A polishing apparatus used in chemical mechanical polishing device is provided. The polishing apparatus includes a polishing plate for holding a wafer to be polished; a polishing pad arm, one end of the polishing pad arm being fixed, another end of the polishing pad arm holding a polishing pad, and the polishing pad arm driving the polishing pad for moving relatively to the wafer; the polishing pad moving relatively to the wafer with drive from the polishing pad arm, and the polishing pad arm ensuring the polishing pad contacting the wafer during movement; and a slurry supply route for supplying polishing slurry between the polishing pad and the wafer during polishing. The present invention also provides a chemical mechanical polishing device. It makes for realizing miniaturization of a chemical mechanical polishing device, saving polishing slurry and improving utilization rate of the polishing pad in the chemical mechanical polishing device to apply the present invention.

Abstract: A CMP system has a polishing table for supporting a CMP pad which a semiconductor wafer is polished. The CMP system has a laser source configured to regenerate the CMP pad through a conditioning process while the CMP pad is disposed on the polishing table.

Abstract: This disclosure is directed to a chemical mechanical polisher and a polishing pad component thereof. The chemical mechanical polisher comprises a polishing platen having a flat surface, and the polishing platen comprises: an electromagnet disposed under the flat surface and configured to fix a polishing pad base on the flat surface; and a switch configured to control the power-on and power-off of the electromagnet. The polishing pad component comprises a polishing pad base, and the polishing pad base is formed of a ferromagnetic material. The chemical mechanical polisher of this disclosure and the polishing pad component thereof can make polishing pad replacement easy, and can also save polishing pads and thus reduce the consumable cost of the chemical mechanical polishing.

Abstract: A polishing system includes a polishing pad having a polishing surface and a conditioner apparatus. The conditioner apparatus includes a conditioner head constructed to receive a conditioning disk for conditioning a surface of the polishing pad, an arm that supports the conditioner head, a base that supports the arm, the arm pivotally connected to the base such that the arm is pivotable about a pivot point to change an angle of inclination of the arm, wherein the pivot point is positioned below the polishing surface of the polishing pad.

Abstract: In one embodiment, a method for cleaning a surface of a polishing pad includes conditioning the polishing pad surface and rotating the conditioned polishing pad surface. The method also includes spraying the polishing pad surface to lift debris from the conditioned polishing pad surface. The method further includes vacuuming the debris from the polishing pad surface downstream from where the condition occurs, wherein downstream is defined by a rotational direction of the polishing pad. In another embodiment, a processing station including a rotatable platen, a substrate carrier head, a polishing fluid delivery system, a conditioner, a spray nozzle, and a vacuum system is provided. The conditioner is disposed between the substrate carrier head and the spray nozzle. The vacuum system is configured to vacuum the polishing pad surface. The vacuum system is downstream from the conditioner, defined by a rotation of the platen.

Abstract: A polishing method is used for polishing a surface of a substrate such as a semiconductor wafer. The polishing method includes a polishing process for polishing a surface of the substrate in accordance with a preset polishing recipe, a pad cleaning process for removing foreign matters on the polishing pad by ejecting a cleaning fluid onto the polishing pad, and a substrate transferring process in which the polished substrate is removed from the top ring at a substrate transferring position, a subsequent substrate to be polished is loaded onto the top ring, and then the top ring holding the subsequent substrate to be polished is returned to the polishing table. The pad cleaning process is started after the completion of the polishing recipe is detected, and the pad cleaning process is terminated by detecting a position of the subsequent substrate to be polished which is undergoing the substrate transferring process.

Abstract: A method and apparatus for conditioning a polishing pad is provided. In one embodiment, a pad conditioning device for a substrate polishing process is provided. The pad conditioning device includes an optical device coupled to a portion of a polishing station adjacent a polishing pad, the optical device comprising a laser emitter adapted to emit a beam toward a polishing surface of the polishing pad, the beam having a wavelength range that is substantially non-reactive with a polishing fluid utilized in the polishing process, but is reactive with the polishing pad.

Abstract: An internal gear grinding machine achieves space savings and reduction in size of a machine, as well as prevents the tools from being damaged even when an abnormal situation such as a blackout occurs, by a simplifying dressing operation. The internal gear grinding machine for grinding a workpiece (W) by synchronously rotating the workpiece (W) and a barrel-shaped threaded grinding wheel (17) in mesh with each other includes a dressing device (20) for dressing the threaded tool (17) by meshing the threaded grinding wheel (17) with a disk dresser (56). When dressing, the threaded grinding wheel (17) and the disc dresser (56) are operated in accordance with the helix angle and barrel shape of the threaded grinding wheel (17), and the brake mechanism (58) applies a braking force to a dresser turn drive motor (53) to enable the disc dresser (56) to be maintained at a turned position thereof.

Abstract: An inner rotary retaining member has an annular outward rolling surface formed of part of a radially outward tapered surface centering on the central axis of a first rotary drive shaft. An outer rotary retaining member has an annular inward rolling surface formed of part of a radially inward tapered surface centering on the central axis of a second rotary drive shaft. The rolling surfaces are opposed to each other. A pocket that supports a workpiece such that the workpiece rotates and revolves as the retaining members rotate is formed at a portion of the carrier, the portion being positioned between the rolling surfaces. The central axis of the workpiece supported by the pocket is inclined relative to the central axis of the rotary drive shafts.

Abstract: A rotary tool of a honing apparatus is provided with honing grindstones that grind a cylinder bore, and guide members that slide in a guide hole of a tool guide. The guide members are each constituted of a base member fixed to the tool body and a slide member fixed to the base member. The base member is composed of a ceramic material, and the slide member is composed of a cemented carbide material. With the guide members having such a configuration, electrolytic dressing is performed on the honing grindstones.

Abstract: A method of regenerating a polishing pad for polishing semiconductor wafers is described wherein the polishing pad is removably stacked, aligned and fixed by a fitting ring to a polishing pad supporting surface of a polishing pad sub plate mounted on a central surface of a sub plate main body on an upper surface of a polisher rotation table and wherein the regeneration may include dressing, as well as cleaning, or regrooving the polishing pad surface.

Abstract: A machining apparatus has a frame carrying a headstock capable of gripping one end of an elongated workpiece and rotating the workpiece about a machining axis. A turntable support is spaced axially from the headstock on the frame. A tailstock carried on the support can be aligned with the machining axis in a machining position of the support. A machining drive is carried on the frame and itself carries a rotatable grinding disk engageable radially of the machining axis with the workpiece when the workpiece is engaged between the headstock and tailstock. A dressing tool carried on the support axially offset from the support axis and angularly offset about the support axis from the tailstock is engageable in a dressing position of the support with the grinding disk for dressing same in the dressing position with the workpiece engaged between the headstock and tailstock.

Abstract: A method of monitoring dressing of a polishing pad is provided. The method includes: rotating a polishing table that supports the polishing pad; dressing the polishing pad by pressing a dresser against the polishing pad while causing the dresser to oscillate in a radial direction of the polishing pad; calculating a work coefficient representing a ratio of a frictional force between the dresser and the polishing pad to a force of pressing the dresser against the polishing pad; and monitoring dressing of the polishing pad based on the work coefficient.

Abstract: Disclosed is a semiconductor wafer polishing method for polishing the surfaces to be polished of semiconductor wafers by use of polishing pads (16, 17) provided on fixing plates by relative movement of the polishing pads and the semiconductor wafers held by carriers. The shaping surfaces (25) of a polishing pad shaping jig (21) are shaped by inverting, with respect to ideal shapes, the shapes of the surfaces to be polished of each semiconductor wafer when the surfaces are polished by use of the polishing pads (16, 17) before shaping, and the shapes of the shaping surfaces of the polishing pad shaping jig are transferred to the pad surfaces (16A and 17A) of the respective polishing pads (16, 17). The surfaces to be polished of each semiconductor wafer are polished by use of the pad surfaces.