Abstract: A method and apparatus for conditioning a polishing pad is described, wherein the polishing pad has a polishing surface for polishing the semiconductor wafer. The method includes positioning a sonic energy generator above the polishing surface of the polishing pad, and applying sonic energy to the polishing surface of the polishing pad. The apparatus a sonic energy generator adapted to be positioned above the polishing surface, the sonic energy generator including a transducer, and a liquid carrier in flow communication with the transducer, wherein the transducer transmits sonic energy into the liquid carrier and the liquid carrier is applied to the polishing surface of the polishing belt.

Abstract: A dressing apparatus (20) attached to a dressing pedestal (25) of a tooth flank grinding machine is maneuverable by means of an advancer device (27) from a dust proof position of rest aside of the dressing position into an optimum dressing position lying between work spindle (3) and grinding worm (11). Here it can be clamped to the bed with high precision and rigidity. After dressing, it is maneuverable back to the position of rest, in which it hinders neither the grinding process nor the workpiece setting up process.

Abstract: A grinding machine rotatably carrying a finish grinding wheel and a super-finish grinding wheel respectively on first and second wheel heads practices a method of grinding workpiece surfaces to super-finish surfaces with micro oil pockets. A surface of a workpiece rotatably carried on the machine is first ground with the finish grinding wheel to a predetermined diameter under the control of a sizing device. The workpiece surface is then ground with the super-finish grinding wheel to a target diameter under the control of a sizing device. The super-finish grinding is performed to the extent that peaks of a section curve representing the roughness of the workpiece surface attained by the finish grinding are removed but bottoms of the surface curve are left to a depth when the target diameter is reached, so that the bottoms so left of the roughness constitute the micro oil pockets.

Abstract: A polishing apparatus for polishing a workpiece comprises a polishing table having a polishing surface and a top ring for holding the workpiece and pressing the workpiece against the polishing surface. The polishing table and the top ring are rotated independently of each other. The polishing apparatus further comprises a dresser for dressing the polishing surface with certain timing and a sensor for observing a property of the polishing surface on the polishing table when the polishing surface is being dressed by the dresser.

Abstract: A dresser wheel mounted on the column of a grinder is presented. The dresser has an x-axis adjustment for positioning the diamond tool along the x-axis and a y-axis adjustment mechanism attached to the x-axis adjustment mechanism for positioning the diamond tool along the y-axis. An angular rotational mechanism attached to the y-axis adjustment mechanism moves along the y axis in response to operation of the y-axis adjustment mechanism. The diamond tool is held in a slot of an arm that is connected to a frame that is connected to and rotates about the angular rotational mechanism. A micrometer is attached to the arm with one end of the micrometer in contact with the frame. The arm moves along an axis in response to a change in the micrometer setting. A dead stop hinged to the arm sets the diamond tool to a calibrated position.

Abstract: A truing tool for truing an essentially cylindrical grinding worm that is arranged on the tool spindle of a machine suitable for the continuous generation grinding in the tangential- and diagonal process. The truing tool comprises an essentially cylindrical gear wheel (6) having an abrasive coating on the surface that is active during truing to profile the flanks of the grinding worm (3) and an essentially cylindrical roll (7) having an abrasive coating on its circumferential surface to adapt the diameter of the addendum circle of the grinding worm. The gear wheel (6) and the roll (7) can be connected axially and torsion-resistantly to the work piece spindle (1) of the machine.

Abstract: Embodiments of a conditioning mechanism for a chemical mechanical polishing system have been provided. In one embodiment, a conditioning mechanism includes a rotor assembly and a conditioning element mounting assembly. A seal is disposed between the rotor assembly and conditioning element mounting assembly and bounds one surface of an expandable plenum defined between the rotor assembly and conditioning element mounting assembly. A spring is disposed between the rotor and conditioning element mounting assemblies and is adapted to bias a lower surface of the conditioning element mounting assembly towards the rotor assembly.

Abstract: A system for conditioning a pad is provided. The system includes a pad conditioning media, a feed-roll containing a supply of the pad conditioning media, and a take-up roll for receiving an end of the pad conditioning media. Further included in the system is a pressure application member defined between the feed-roll and the take-up roll. The pressure application member is designed to apply pressure onto the pad conditioning media as the pad conditioning media is applied against the pad to cause a conditioning of a surface of the pad.

Abstract: An in-situ measurement of thickness profiles of polishing pads (1) used in chemical mechanical polishing (CMP) is enabled by arranging sensors (7) for measuring distances together with a conditioner (6). The sensors (7) are provided as e.g. laser sensors (7a-c) performing an indirect measurement from a calibrated height level above the pad (1) surface or as e.g. laser (7a-c) or ultrasonic sensors (7e) performing a direct thickness measurement from the pad surface to the pad-platen contact surface. A thickness profile (10) is obtained by co-moving the sensor (7a, 7b) with the conditioner (6) during conditioning or by leading a sensor (7c) along a guide-rail (14) above the pad surface (1) with e.g. a constant distance. A reference distance measurement to the polishing platen (2) can be achieved by a second sensor (7d) mounted at a position, where there is no pad on the platen (2), e.g. a hole the edge.

Abstract: A pad conditioner coupling (58) holds an end effector (57) for abrading a polishing media surface. Pad conditioning planarizes the polishing media surface, removes particulates, and roughens the polishing media surface to promote the transport of polishing slurry. Pad conditioner coupling (58) comprises shoulder screws (50), polymer bearings (51), a static plate (52), a wave spring (54), and a floating plate (55). Wave spring (54) is placed between static plate (52) and floating plate (55). The shoulder screws (50) connect through the static plate (52) and fasten to the floating plate (55) to hold the wave spring (54) in a preloaded condition. The polymer bearings (51) prevent the shoulder screws (50) from contacting the static plate (52). Wave spring (54) allows the floating plate (55) to move in a non-parallel position to the static plate (52) for angular compensation in the pad conditioning process.

Abstract: A device for sharpening a rotating discoidal cutting tool (13) is described, comprising at least one sharpening grinder (21; 23). The device provides a dressing tool (61; 71) which interacts with said at least one grinder to dress the working surface of said grinder.

Abstract: An apparatus and a method for transferring a rotational torque from a hub frame to a one-piece hub shaft onto which a pad conditioning disc is attached are described. The apparatus is a one-piece hub shaft for mounting into a hub-frame. To provide a great improvement over the conventional design wherein a hub spacer is mounted to a hub shaft by screw means, the present invention conditioning head is assembled together by frictionally engaging a key and a flat surface on the hub shaft to a slot opening on the hub frame such that any catastrophic failure due to a screw breakage can be avoided. The present invention novel frictional engagement further provides a more uniform torque transfer between the two components.

Abstract: Provided are a chemical mechanical polishing apparatus and a method of chemical mechanical polishing using the same in which the clogs of the polishing fluid are prevented from being trapped between the diamond grains embedded in the dresser or removing such clogs already trapped, thereby to prevent a desired lifetime of the dresser from being shortened.

Abstract: An invention is provided for a chemical mechanical planarization apparatus. The apparatus includes a cylindrical frame, a polishing membrane attached to an end of the cylindrical frame, and a pad support disposed within the cylindrical frame and below the polishing membrane that is capable of differentially flexing the polishing membrane. The pad support can be air bearing that provides air pressure to the polishing membrane to differentially flex the polishing membrane during a CMP process. In a further aspect, the pad support can be in contact with the polishing membrane, and include mechanical elements that are capable of differentially flexing the polishing membrane during a CMP process. In addition, the apparatus can include a conditioner element disposed above the polishing membrane, and a conditioner pad support disposed below the polishing membrane and the conditioner element, wherein the conditioner element is capable of eroding the polishing membrane.

Abstract: A high-pressure pad cleaning system that can be used in conjunction with semiconductor device fabrication tools that utilize pads, such as chemical-mechanical polishing (CMP) tools, is disclosed. A system includes a turntable, first and second outlets, and a dresser. A pad is placed on the turntable, where the turntable rotates in a first direction. The first outlet supplies a dressing solution, such as deionized water, onto the pad at a first pressure, substantially at a single point on the center of the pad. The second outlet supplies the solution onto the pad at a second pressure greater than the first pressure, substantially at a radial line from the center of the pad to its edge at an angle and in a direction opposite to the first direction.

Abstract: A vitrified bond tool including: (a) a support body; (b) a vitrified bond layer which is formed on a working surface of the support body; and (c) a plurality of abrasive grains which are held by the vitrified bond layer so as to be fixed relative to the working surface of the support body and which are spaced apart from each other with spacing between the adjacent ones of the abrasive grains. This vitrified bond tool is advantageously manufactured according to a method including the steps of (i) forming a pattern layer which includes a vitrified bond, in a predetermined pattern on the working surface of the support body; (ii) sprinkling the abrasive grains over the pattern layer before the pattern layer is dried; and (iii) firing the pattern layer and the abrasive grains which are bonded to the pattern layer and are arranged in the predetermined pattern on the working surface of the support body.

Abstract: A method and apparatus for controlling the coherence of a high-pressure fluid jet directed toward a selected surface. In one embodiment, the coherence is controlled by manipulating a turbulence level of the fluid forming the fluid jet. The turbulence level can be manipulated upstream or downstream of a nozzle orifice through which the fluid passes. For example, in one embodiment, the fluid is a first fluid and a secondary fluid is entrained with the first fluid. The resulting fluid jet, which includes both the primary and secondary fluids, can be directed toward the selected surface so as to cut, mill, roughen, peen, or otherwise treat the selected surface. The characteristics of the secondary fluid can be selected to either increase or decrease the coherence of the fluid jet. In other embodiments, turbulence generators, such as inverted conical channels, upstream orifices, protrusions and other devices can be positioned upstream of the nozzle orifice to control the coherence of the resulting fluid jet.

Abstract: The first driving shaft 2 is provided with the electric supply equipment 8 such as the metal brush. The second driving shaft 3 is as well too. Further, a nozzle 10 for supplying the conductive coolant is supplied to the grinding portion between the grinding surface 1a and the surface Wa to be ground is provided. When grinding is carried out, the conductive coolant is supplied from the nozzle 10 and by turning on the electricity to the first driving shaft 2 and the second driving shaft 3, a voltage is applied between the grinding surface 1a and the surface Wa to be ground of the work W. Due to electrolysis of that instance, the conductive material of the surface of the grindstone is dissolved in the conductive coolant, simultaneously the clogging of the grinding surface 1a is solved. Accordingly, a super ball finishing using a grindstone of the quite high grain size becomes possible.

Abstract: A method and apparatus for controlling the coherence of a high-pressure fluid jet directed toward a selected surface. In one embodiment, the coherence is controlled by manipulating a turbulence level of the fluid forming the fluid jet. The turbulence level can be manipulated upstream or downstream of a nozzle orifice through which the fluid passes. For example, in one embodiment, the fluid is a first fluid and a secondary fluid is entrained with the first fluid. The resulting fluid jet, which includes both the primary and secondary fluids, can be directed toward the selected surface so as to cut, mill, roughen, peen, or otherwise treat the selected surface. The characteristics of the secondary fluid can be selected to either increase or decrease the coherence of the fluid jet. In other embodiments, turbulence generators, such as inverted conical channels, upstream orifices, protrusions and other devices can be positioned upstream of the nozzle orifice to control the coherence of the resulting fluid jet.

Abstract: A method and apparatus for conditioning a fixed-abrasive polishing pad used in chemical mechanical planarization of semiconductor wafers is described. The apparatus includes a conditioning member having a smooth surface. The method includes providing a conditioning member having a smooth surface, pressing the conditioning member against the fixed-abrasive polishing pad, and moving the fixed-abrasive polishing pad. In one embodiment, the method further comprises moving the conditioning member perpendicular to the direction of movement of the fixed-abrasive pad to compensate for variations in amounts of exposed abrasive on the fixed-abrasive pad.

Abstract: Conditioning systems and methods for conditioning polishing pads used in mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies. In one aspect of the invention, a conditioning system includes a conditioning element or conditioning member having a conditioning face configured to engage a polishing pad. The conditioning face preferably includes a bonding medium covering at least a portion of the conditioning face and a plurality of conditioning particles attached to the bonding medium. The conditioning system also includes a corrosion-inhibiting unit that can be coupled to the conditioning element or a liquid on the polishing pad. The corrosion-inhibiting unit retards corrosion of the bonding medium in the presence of chemicals on the polishing pad that would otherwise corrode the bonding medium.

Abstract: An apparatus and method for conditioning a pad used for chemical-mechanical planarization (CMP) are provided, that allow the conditioning to be performed in situ without stopping the polishing. A retractable pad-conditioning structure, e.g., conditioning tips, is positioned along the bottom perimeter of a wafer carrier. While polishing a surface of a wafer held in the middle of the wafer carrier, whenever the removal rate drops below a permissible value, the pad-conditioning structure, which rotates in unison with the wafer carrier, is lowered to contact the pad to condition the pad's surface. Since an area of the pad used for polishing the wafer is always surrounded by already conditioned pad areas and the area for polishing moves as the wafer carrier moves around on the pad surface, a substantially uniform removal rate is maintained. When the pad is sufficiently conditioned, the conditioning structure is retracted until the pad needs to be conditioned again.

Abstract: Cloth cleaning device of a polishing machine which is capable of fully cleaning a polishing cloth including a part in the vicinity of a center roller. The cloth cleaning device includes an arm movable in a plane parallel to the polishing cloth between a first position above the polishing cloth and a second position outside of the polishing cloth. A jet nozzle is attached to the arm and directs high pressure water toward the polishing cloth. An enclosing member encloses the jet nozzle so as to prevent the high pressure water, which has been directed out from the jet nozzle, from scattering. The jet nozzle is oriented toward the center roller and the high pressure water is directed toward the part of the polishing cloth in the vicinity of the center roller when the arm moves the jet nozzle close to the center roller.

Abstract: The present invention provides an improved conditioning wheel for conditioning polishing pads used to polish semiconductor wafers. In one embodiment, the conditioning wheel includes a planar body having a metal surface located thereon. The metal surface has abrasive particles embedded therein and a retainer coating deposited over the metal surface and the abrasive particles. The retainer coating inhibits the abrasive particles from dislodging during a conditioning process.

Abstract: A polishing head and an apparatus for the chemical mechanical polishing (CMP) of a substrate are provided in which a conditioning surface is integrated in or directly coupled to the polishing head so that a simplified structure of the CMP apparatus can be obtained. Furthermore, establishing quite similar pad conditions may be achieved. Preferably, the conditioning surface is integrated into the retaining element of sophisticated CMP apparatuses, thereby allowing the application of an adjustable pressure to the conditioning surface.

Abstract: The polishing particle surface of the dresser of a chemical mechanical polishing apparatus used for a planarization process in manufacturing semiconductor devices is inclined. Moreover, the pressure to be applied onto the polishing surface of the dresser is linearly varied with a nonzero slope.

Abstract: A method and apparatus for qualifying a polishing pad used in chemical mechanical planarization of semiconductor wafers is described. The apparatus includes at least one qualifying member including at least one collimated hole structure, wherein the collimated hole structure forms multiple channels within the qualifying member. The method includes providing at least one qualifying member formed with at least one capillary tube array, wherein the capillary tube array forms multiple channels within the qualifying member, pressing the qualifying member against the polishing pad, and moving the qualifying member along the polishing pad along a trajectory to simulate the polishing of a semiconductor wafer.

Abstract: A abstract polishing apparatus has a substrate carrier a substrate and an abrasive member having a polishing surface. The surface is slidingly engaged with the substrate in order to effect polishing. The dressing device includes a light source when generating light rays for irradiating the polishing surface of the abrasive member, whereby dressing the polishing surface. A temperature control system control the temperature of the polishing surface of the abrasive member by sensing the temperature of the polishing surface with the temperature sensor. Mechanical dressing of the polishing surface, in addition to dressing by radiation of the polishing surface, may also be employed in order to flatten the entire polishing surface. The abrasive member preferably includes an abrasive particles, a binder and a photophilic for promoting the dressing of the polishing surface by light rays.

Abstract: The invention provides a machining center for machining a workpiece by moving a grinding wheel and the workpiece relative to each other in the X, Y and Z directions. The machining center has a main spindle for removably mounting a grinding wheel, a spindle head for rotationally supporting the main spindle, a table for mounting the workpiece, a column for movably supporting the spindle head, and tool dressing means having a dresser spindle, provided over the spindle head to move in the vertical direction toward and away from the grinding wheel mounted to the main spindle, for mounting a dresser for truing or dressing the outer peripheral surface of the grinding wheel.

Abstract: Chemical-mechanical planarizing machines and methods to maintain processing pads and other planarizing media used in planarizing microelectronic workpieces. In one embodiment, a planarizing machine can include a surfacing device attached to one of a carrier or a support member. The surfacing device is positioned to transmit a non-abrasive energy, such as ultrasonic waves, against the planarizing medium. The planarizing machine can include a controller that is operatively coupled to the surfacing device for activating the surfacing device at appropriate moments either before or during a planarizing cycle of a microelectronic workpiece. In another embodiment the controller can be a computer having a database containing instructions for causing the surfacing device to transmit the non-abrasive energy against the planarizing pad.

Abstract: An apparatus and method is provided for polishing work pieces such as semiconductor wafers. The apparatus includes a variable number of independent heads 20, platens 32 and polishing units 18. This polishing apparatus belongs to a group of polishing machines with wafers attached to the same heads 20 through all polishing steps without undesirable reloading from one head 20 to another between polishing steps. Each independent head 20 is automatically coupled to and decoupled from any of the polishing units 18 to optimize throughput and provide flexibility in accommodating different polishing processes. A head transfer subsystem 22 provides an independent means of transfer for each head 20, thus an infinite number of contemporaneous or overlapping polishing cycles can be completed on multiple wafers resulting in maximum processing throughput.

Abstract: Apparatus of carrier in a chemical mechanical polishing equipment comprises a carrier module for holding a wafer face down. A retaining ring and conditioning module is coupled to the carrier module, which is used for protecting the wafer edge against contact with a polishing pad in a deformed shape and executing a conditioning of the polishing pad. A first support module is coupled to the retaining ring and conditioning module, which is used for rotating, pressing down, and supplying conditioning chemicals for the retaining ring and conditioning module.

Abstract: Generally, a method and apparatus for cleaning a backside of a web of polishing material. In one embodiment, the apparatus includes a platen having a support surface adapted to support the backside the web and a web cleaner disposed on the platen and adjacent the backside of the web. A method for cleaning a web of polishing material is also provided. In one embodiment, the method includes the steps of supporting a portion of the web of polishing media on a platen, advancing a portion of the web onto the platen, and cleaning the unrolled portion of the web.

Abstract: A conditioning disk actuating system for raising and lowering a conditioning disk inside a conditioning head for the conditioning of semiconductor wafer polishing pads. The system includes a fluid-actuated cylinder which is coupled to a travel hub vertically slidably mounted in a travel housing provided inside the conditioning head. The conditioning disk is mounted on the bottom end of a disk shaft carried by the travel hub. The fluid-actuated cylinder is operated to selectively lower and raise the travel hub and conditioning disk to press the disk against the polishing pad and remove the disk from the polishing pad, respectively. A position sensing mechanism may be provided in the conditioning head for revealing the “up” or “down” position of the conditioning disk.

Abstract: A cleaning device is used to clean a polishing pad and has a first cleaning system with a grinding wheel and a second cleaning system with a distributor for discharging a gas-water mixture at high pressure. The polishing pad, which is arranged on a polishing table, can be set in rotary motion, so that the surface sections that will be cleaned are first preliminarily cleaned by the grinding wheel and are then subjected to a second cleaning by the gas-water mixture of the distributor.

Abstract: A high-pressure pad cleaning system that can be used in conjunction with semiconductor device fabrication tools that utilize pads, such as chemical-mechanical polishing (CMP) tools, is disclosed. A system includes a turntable, first and second outlets, and a dresser. A pad is placed on the turntable, where the turntable rotates in a first direction. The first outlet supplies a dressing solution, such as deionized water, onto the pad at a first pressure, substantially at a single point on the center of the pad. The second outlet supplies the solution onto the pad at a second pressure greater than the first pressure, substantially at a radial line from the center of the pad to its edge at an angle and in a direction opposite to the first direction.

Abstract: A polishing apparatus has a turntable with a polishing cloth attached thereto and a top ring for holding and pressing a workpiece to be polished against the polishing cloth under a certain pressure. The polishing apparatus also has a first dressing unit having a contact-type dresser for dressing the polishing cloth by bringing the contact-type dresser in contact with the polishing cloth, and a second dressing unit having a noncontact-type dresser for dressing the polishing cloth with a fluid jet applied therefrom to the polishing cloth. The contact-type dresser comprises a diamond dresser or an SiC dresser.

Abstract: The orbiting knife or knives on a rotary knife holder in a tobacco shredding machine is or are automatically adjusted relative to a sharpening tool in response to signals indicating changes of one or more variable parameters which are indicative of the need for a sharpening of the knife or knives. Such parameters include at least the magnitude of torque which is required to rotate the knife holder but often also the temperature of the mass of condensed tobacco being fed into the range of the knife or knives, the quantity of tobacco per unit length of the mass, the mosture content of tobacco in the mass, the presence and/or the size and/or the nature of foreign matter in the mass, and others.

Abstract: A system and method are presented for selectively conditioning a surface of a polishing pad of a CMP apparatus in order to achieve a desired surface profile of a semiconductor wafer. The semiconductor wafer may be subjected to a CMP operation using the CMP apparatus following the conditioning. The present CMP apparatus includes a polishing pad having an underside surface mechanically coupled to a substantially planar surface of a platen, an abrasive surface, and a measurement system. The platen and abrasive surface may be rotatable about respective rotational axes. The present conditioning method includes selecting a region of an upper “polishing” surface of the polishing pad (e.g., a CMP region) encircling a rotational axis of the platen and bounded by first and second radial distances from the rotational axis of the platen.

Abstract: Disclosed is a dressing apparatus wherein a polishing surface can be regenerated stably over a long period without any danger of an object to be polished being scratched. A dressing surface 50a of a dresser 48 is caused to slide on a polishing surface 30a of a polishing table 22 while the dressing surface is urged against the polishing surface. The dressing surface is formed from a grindstone 50.

Abstract: A calibration device for a pad conditioner head of a CMP machine includes a lower first horizontal member defining an arcuate reference surface having a shape complementary to that of the outer peripheral edge of the platen of the machine, an upper second horizontal member spaced vertically from the first member and having a reference mark thereon lying in the projected plane of the reference surface, and a connecting member interconnecting the first member and second member. When the reference surface of the first horizontal member of the calibration device is be butted against the outer peripheral edge of the platen adjacent the head of the pad conditioner, the location of the outermost portion of the head of the pad conditioner relative to the reference mark is readily observable. Thus, the extent to which the outermost portion of the head of the pad conditioner is vertically aligned relative to the outer peripheral edge of the platen can be easily and accurately determined.

Abstract: A method for smoothing a surface of a polishing pad previously used in planarizing a surface of a substrate in a chemical mechanical planarization (CMP) system is provided. The method starts by conditioning the surface of the polishing pad so as to create a post-conditioned surface having a plurality of asperities. The post-conditioned surface of the polishing pad is then ironed, thus compressing the plurality of asperities onto the post-conditioned surface of the polishing pad such that the plurality of asperities lay substantially flat against the post-conditioned surface of the polishing pad.

Abstract: A grinding machine for centerless grinding of workpieces is provided. The workpieces are disposed on a support in the area of a longitudinal plane of the grinding machine. A first slide is provided for a grinding wheel and positioned laterally relative to the longitudinal plane. A second slide is provided for a regulating wheel and is likewise positioned laterally with respect to the longitudinal plane. A first dressing tool is provided for dressing the grinding wheel at a first predetermined position and a second dressing tool for dressing the regulating wheel at a second predetermined position. The first and second predetermined positions are located in the area of the longitudinal plane.

Abstract: A polishing apparatus includes a table on which a polishing target member is placed, and at least one nozzle which sprays a polishing solution to a surface of the polishing target member so as to form, by polishing, the surface of the polishing target member. The nozzle and the polishing target member move relative to each other, and an angle of the nozzle is changeable.

Abstract: A method and apparatus for conditioning a polishing pad is described, wherein the polishing pad has a polishing surface for polishing the semiconductor wafer, and a back surface opposed to the polishing surface. The method includes positioning a sonic energy generator adjacent to the back surface of the polishing pad, and generating sonic energy through the back surface of the polishing pad. The apparatus includes a sonic energy generator adapted to be positioned adjacent the back surface, the sonic energy generator including a transducer connected to a contact member, wherein the sonic energy generator is adapted to transmit sonic energy in a direction through the back surface and to the polishing surface of the polishing belt.

Abstract: A method and system for cleaning conditioning devices used in chemical mechanical polishing (CMP) systems is disclosed. The system includes a robotic arm for holding and transporting the conditioning device between the polish pad area of the machine and the conditioning device cleaning area. The cleaning area consists of an ultrasonic tank containing a liquid for the purpose of removing particles, residues and contaminants from the conditioning device and its mounting hardware. Removal of contaminants from the conditioning device leads to reduced defect levels in the CMP process.

Abstract: This invention is a process and device for high speed electrolytic in-process dressing (HELID). The device of the present invention may be provided as an add on to an existing grinding machine or may be integrated into a grinding machine as a subsystem. Grinding machines which are subject to the present invention include, but are not limited to, surface, cylindrical, centerless and double-disk grinding machines.

Abstract: Specific embodiments of the present invention provide a chemical-mechanical planarization apparatus for planarizing an object comprising a platen assembly for holding an object having a target surface to be planarized. A polishing pad is configured to contact the object during planarization with a contact portion over a contact area which is smaller in area than the target surface. The polishing pad has a noncontact portion which is not in contact with the object during planarization. The polishing pad is movable relative to the object to move the noncontact portion in contact with the object and move the contact portion out of contact with the object. A conditioner is configured to condition the noncontact portion of the polishing pad. The noncontact portion of the polishing pad may be conditioned continuously during planarization of the object by the polishing pad. An abrasive may be delivered to the contact area between the polishing pad and the target surface of the object.

Abstract: A pad conditioner coupling (58) holds an end effector (57) for abrading a polishing media surface. Pad conditioning planarizes the polishing media surface, removes particulates, and roughens the polishing media surface to promote the transport of polishing slurry. Pad conditioner coupling (58) comprises shoulder screws (50), polymer bearings (51), a static plate (52), a wave spring (54), and a floating plate (55). Wave spring (54) is placed between static plate (52) and floating plate (55). The shoulder screws (50) connect through the static plate (52) and fasten to the floating plate (55) to hold the wave spring (54) in a preloaded condition. The polymer bearings (51) prevent the shoulder screws (50) from contacting the static plate (52). Wave spring (54) allows the floating plate (55) to move in a non-parallel position to the static plate (52) for angular compensation in the pad conditioning process.

Abstract: The polishing pad conditioner incorporates a plurality of diamond prisms 12 arranged regularly and protruding towards a surface to be processed, and a conducting bonding member 14 that fixes the diamond prisms into a single body. The conducting bonding member 14 is provided with a conducting metal plate 15 with a plurality of holes 15a for embedding the diamond prisms 12, and a conducting sintered metal 16 that is filled into the spaces between the holes and the diamond prisms and sintered. The conducting bonding member can be dressed electrolytically by passing a flow of conducting liquid 24 through the gap between the member and an electrode placed opposite. Thus, the surface of a polishing pad can be reprocessed (reconditioned) to an appropriate roughness, so the conditioner can continue to operate under even, stable conditions for a very long time, with a rather low manufacturing cost and without contaminating the silicon wafers.