Abstract: Conditioning devices, systems and methods for conditioning a contact surface of a processing pad used in processing microelectronic workpieces. One embodiment of a conditioning device comprises an end-effector having a conditioning surface configured to engage the contact surface of the processing pad and a plurality of microstructures on the conditioning surface. The microstructures can be arranged in a pattern corresponding to a desired pattern of microfeatures on the contact surface of the processing pad. In several embodiments, the microstructures are raised elements projecting from the conditioning surface and/or depressions in the conditioning surface. The condition surface can also be smooth. The conditioning device can also include a heater coupled to the end-effector for heating the processing pad.

Abstract: A lapping surface patterning system includes a patterning apparatus which can be removably mounted over the lapping surface of a continuous polishing tool. The patterning apparatus includes a radial arm having a movable cutting tool carriage mounted thereon. The cutting tool carriage positions a cutting tool at a desired radius from the center of the lapping surface. The patterning apparatus further includes an outer support having a carriage which positions an outer end of the radial arm, thereby positioning the cutting tool at a desired angular position. A motion control system transmits control signals to the two carriages, thereby driving the cutting tool over a desired pattern. This system can be used to repeatedly and consistently form a pattern of grooves in the lapping surface of the polishing tool.

Abstract: A flat workpiece 5 (silicon wafer) is driven so as to rotate in horizontal by a workpiece driving device 12. A cylindrical conducting grindstone 14 is provided, the outer periphery of which is in contact with the surface of the workpiece. A grindstone rotating device 16 drives the grindstone about the axis thereof. A grindstone reciprocating device 18 moves the grindstone with a reciprocating motion along the surface of the workpiece. An axial guiding device 20 keeps the center line X of the grindstone at a predetermined angle to the horizontal axis. An ELID device 22 electrolytically dresses the outer periphery of the grindstone. The center line X of the grindstone is held at a predetermined angle &thgr; to the horizontal axis, and at the same time, the outer periphery of the grindstone is dressed electrolytically.

Abstract: An electrolytic in-process dressing device 10 is provided with a disk-shaped metal-bonded grindstone 2 with a surface 2a with a circular arc shape with a radius R at its outer periphery and a numerical control device 16. The disk-shaped metal-bonded grindstone 2 rotates around an axis Y, and the grindstone is dressed electrolytically while the device 10 grinds the workpiece 1. The numerical control device 16 is provided with a rotary truing device 12 that rotates around the X axis that orthogonally crosses the axis of rotation Y and trues the circular arc surface 2a, a shape measuring device 14 for measuring the shape of the circular arc surface of the grindstone and the shape of the processed surface of workpiece 1 on the machine, and controls the grindstone numerically in the three directions along the axes X, Y and Z. The numerical control device 16 moves the grindstone in three axial directions and repeats the operations of truing, grinding and measurements on-line.

Abstract: An apparatus for polishing an object, includes (a) a rotatable circular polishing plate (11) having a polishing surface on which an object (12) is to be polished, (b) a pressurizer (21) which applies a pressure to an object (12) to make the object (12) contact with the polishing surface, (c) a first unit (13) which supplies polishing solution containing abrasive, to the polishing surface, (d) a dresser (23) which dresses the polishing surface, and (e) a second unit (14) which is located downstream of the dresser (23) and upstream of the first unit (13) in a direction of rotation of the polishing plate (11) and which has an absorption surface (31) through which the second unit sucks the polishing solution from the polishing surface, the absorption surface (31) being formed thereon with a plurality of pivots (35).

Abstract: A conditioner for polishing pad and a method for manufacturing the same are disclosed. The conditioner comprises a substrate having formed with a plurality of geometrical protrusions of an uniformed height on at least one of its sides, and a cutting portion having a diamond layer of an uniformed thickness formed substantially on a whole surface of the side of the substrate having the geometrical protrusions. The geometrical protrusions have a flat upper surface or the upper surface may comprise a plurality of smaller geometrical protrusions formed by recessed grooves. The substrate is made from ceramic or cemented carbide materials and has a shape of a disk, a plate having multiple corner, a cup, a segment, or a doughnut with flattened upper and lower surfaces. The conditioner may further comprise a body portion being fixedly attached to the substrate at a side opposite to the side having formed with geometrical protrusions for linking the cutting portion to conditioning equipment.

Abstract: An apparatus and a method for transferring a rotational torque from a hub frame to a one-piece hub shaft onto which a pad conditioning disc is attached are described. The apparatus is a one-piece hub shaft for mounting into a hub-frame. To provide a great improvement over the conventional design wherein a hub spacer is mounted to a hub shaft by screw means, the present invention conditioning head is assembled together by frictionally engaging a key and a flat surface on the hub shaft to a slot opening on the hub frame such that any catastrophic failure due to a screw breakage can be avoided. The present invention novel frictional engagement further provides a more uniform torque transfer between the two components.

Abstract: A method and apparatus for improving the pad conditioning process of a polishing pad in a chemical-mechanical polishing apparatus employs closed loop control of the polishing pad conditioning process. An arrangement includes a pad conditioning head carried by an arm that is coupled to an arm support located remotely from the conditioning head. A down force sensor in the arm support measures the down force exerted by the pad conditioning head through the conditioning disk. A controller receives the down force measurements from the down force sensor and controls the arm support to controllably vary the down force exerted by the pad conditioning head. The conditioning apparatus is thus controlled in response to the feedback from the down force measurements in a closed loop control to modify the conditioning process and control the pad wear uniformity.

Abstract: A dressing apparatus (20) attached to a dressing pedestal (25) of a tooth flank grinding machine is manoeuvrable by means of an advancer device (27) from a dust proof position of rest aside of the dressing position into an optimum dressing position lying between work spindle (3) and grinding worm (11). Here it can be clamped to the bed with high precision and rigidity. After dressing, it is manoeuvrable back to the position of rest, in which it hinders neither the grinding process nor the workpiece setting up process.

Abstract: A pad conditioner coupling (58) holds an end effector (57) for abrading a polishing media surface. Pad conditioning planarizes the polishing media surface, removes particulates, and roughens the polishing media surface to promote the transport of polishing slurry. Pad conditioner coupling (58) comprises shoulder screws (50), polymer bearings (51), a static plate (52), a wave spring (54), and a floating plate (55). Wave spring (54) is placed between static plate (52) and floating plate (55). The shoulder screws (50) connect through the static plate (52) and fasten to the floating plate (55) to hold the wave spring (54) in a preloaded condition. The polymer bearings (51) prevent the shoulder screws (50) from contacting the static plate (52). Wave spring (54) allows the floating plate (55) to move in a non-parallel position to the static plate (52) for angular compensation in the pad conditioning process.

Abstract: A multi-functional conditioner set for a chemical-mechanical polishing station. The multi-functional conditioner set has at least two conditioning heads each made from a different material such as diamond dust and nylon. The multi-functional conditioner set also includes an ejection tube for delivering chemical agents and de-ionized water to the conditioning heads. Moreover, a vibrator is attached to the ejection tube to transmit ultrasonic or megasonic vibration to the chemical agents and de-ionized water. The conditioning heads can be arranged in various combinations and the ejection tube set to various control settings. Hence, a polishing pad can be cleaned or reconditioned and residual diamond particles on the polishing pad can be removed. Furthermore, the conditioner set occupies only a single area above the polishing table of the polishing station.

Abstract: A method and system for cleaning conditioning devices used in chemical mechanical polishing (CMP) systems is disclosed. The system includes a robotic arm for holding and transporting the conditioning device between the polish pad area of the machine and the conditioning device cleaning area. The cleaning area consists of an ultrasonic tank containing a liquid for the purpose of removing particles, residues and contaminants from the conditioning device and its mounting hardware. Removal of contaminants from the conditioning device leads to reduced defect levels in the CMP process.

Abstract: An ELID centerless grinding apparatus comprising: a blade 2 for horizontally supporting a rotator workpiece 1 and and a regulating wheel 10 driven to rotate around a horizontal shaft center. An outer surface of the workpiece is subjected to ELID grinding by using a conductive grinding wheel 4. An outer peripheral portion of the wheel 10 includes a conductive elastic member 11 and abrasion resisting particles 12. An electrolytic electrode 14 is provided in close vicinity to an outer peripheral surface of the wheel 10. An electrolytic power supply 16 applies an electrolytic voltage between the electrolytic electrode and the wheel. A conductive electrolytic fluid is flow between the electrode and the wheel and the member 11 is removed by the electrolytic dressing to cause the abrasion resisting particles 12 to project, while the particles 12 are brought into contact with the outer peripheral surface of the workpiece 1 to rotate around its shaft center.

Abstract: A chemical mechanical polishing (CMP) apparatus and method for polishing semiconductor wafers utilizes multiple wafer carriers to polish a corresponding number of semiconductor wafers on a single polishing pad in parallel. In one embodiment, the wafer carriers are used to transfer semiconductor wafers between one or more wafer transfer stations and the polishing pad. In other embodiments, one or more wafer transfer arms are used to transfer the semiconductor wafers between the wafer transfer station(s) and the wafer carriers. The CMP apparatus is configured to sequentially process semiconductor wafers to increase the throughput of the apparatus. In addition, the components of the CMP apparatus are arranged such that the footprint of the apparatus is minimized.

Abstract: A method for in-situ cleaning a polishing pad and a wafer surface simultaneously during copper chemical mechanical polishing and an apparatus for carrying out such method are disclosed. The method is carried out by dispensing an acid-containing solution onto a top surface of a polishing pad while the wafer is rotated against the polishing pad without any slurry solution being dispensed. The acid-containing solution may be advantageously formed by diluting an acid such as citric acid, HCOOH, CH3COOH, HNO3, H2SO4 and HF to a concentration of less than 10 wt. % acid, preferably less than 5 wt. % acid, and more preferably less than 1 wt. % acid. The acid-containing solution may be dispensed onto a top surface of the polishing pad for a time period between about 30 sec. and about 300 sec.

Abstract: Method and an apparatus for the profiling of single-gear or multiple-gear grinding worms for grinding tooth profiles in accordance with the principle of continuous diagonal generating grinding. A grinding worm is divided into at least two axial zones wherein one zone remains unmodified and a second zone receives, by means of special profiling methods, modifications of the thread flanks for the generation of tooth flank modifications The main attribute of these profiling methods is additional movements, which are superimposed on the disk-shaped profiling tool and/or the grinding worm in relation to a given profiling shift position, and which result in the modifications of the grinding worm flanks that are mapped onto the flanks of the toothed wheel work during subsequent diagonal generating grinding across a grinding worm zone profiled in this manner.

Abstract: A method and apparatus for slurry distribution is provided. The apparatus for the distribution of slurry over a polishing pad surface used in chemical mechanical polishing includes a roller positioned over a polishing pad surface. The roller is connected with a gimbaling attachment to a positioning arm and is configured to apply a force against the polishing pad surface while maintaining a surface of the roller substantially parallel to the polishing pad surface. The gimbaled roller drives the slurry into and over the porous texture of the polishing pad surface and ensures a substantially even distribution of slurry. In another example, a double roller apparatus is also provided and is configured to combine slurry distribution and pad conditioning.

Abstract: A calibration device for a pad conditioner head of a CMP machine includes a lower first horizontal member defining an arcuate reference surface having a shape complementary to that of the outer peripheral edge of the platen of the machine, an upper second horizontal member spaced vertically from the first member and having a reference mark thereon lying in the projected plane of the reference surface, and a connecting member interconnecting the first member and second member. When the reference surface of the first horizontal member of the calibration device is be butted against the outer peripheral edge of the platen adjacent the head of the pad conditioner, the location of the outermost portion of the head of the pad conditioner relative to the reference mark is readily observable. Thus, the extent to which the outermost portion of the head of the pad conditioner is vertically aligned relative to the outer peripheral edge of the platen can be easily and accurately determined. SEC.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include an elongated, non-continuous polishing pad oriented at an angle relative to the horizontal to allow planarizing liquids and materials removed from the microelectronic substrate to flow off the polishing pad under the force of gravity. Two such polishing pads can be positioned opposite each other in a vertical orientation and can share either a common platen or a common substrate carrier. The polishing pads can be pre-attached to both a supply roll and a take-up roll to form a cartridge which can be easily removed from the apparatus and replaced with another cartridge.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include an elongated, non-continuous polishing pad oriented at an angle relative to the horizontal to allow planarizing liquids and materials removed from the microelectronic substrate to flow off the polishing pad under the force of gravity. Two such polishing pads can be positioned opposite each other in a vertical orientation and can share either a common platen or a common substrate carrier. The polishing pads can be pre-attached to both a supply roll and a take-up roll to form a cartridge which can be easily removed from the apparatus and replaced with another cartridge.

Abstract: A polishing apparatus for polishing a substrate comprises a polishing table having a polishing surface, and a substrate holding apparatus for holding a substrate to be polished and pressing the substrate against the polishing surface. The substrate holding apparatus comprises a vertically movable top ring body for holding a substrate, and a fluid supply source for supplying a fluid under a positive pressure or a negative pressure to a hermetically sealed chamber which is defined in the top ring body to control the pressure under which the substrate is pressed against the polishing surface. The substrate holding apparatus further comprises a measuring device disposed in a fluid passage interconnecting the hermetically sealed chamber and the fluid supply source for measuring a flow rate of the fluid in the fluid passage.

Abstract: Apparatus of carrier in a chemical mechanical polishing equipment comprises a carrier module for holding a wafer face down. A retaining ring and conditioning module is coupled to the carrier module, which is used for protecting the wafer edge against contact with a polishing pad in a deformed shape and executing a conditioning of the polishing pad. A first support module is coupled to the retaining ring and conditioning module, which is used for rotating, pressing down, and supplying conditioning chemicals for the retaining ring and conditioning module.

Abstract: A conductive grindstone 12, a circular disk-like discharge electrode 14 with an outer rim 14a that can access a machining surface 12a of the grindstone, an electrode rotating device 16, a position controlling device 18 that controls the relative position between the outer rim of the electrode and the grindstone, a voltage applying device 20 for applying voltage pulses between the grindstone and the electrode, and a mist-supplying device 22 that supplies pressurized conductive mist between the grindstone and the electrode are provided. The pressurized conductive mist is a mixture of a low-conductivity aqueous solution and compressed air. A plasma discharge is generated between the grindstone and the electrode by means of this pressurized conductive mist, and the grindstone is subjected to truing.

Abstract: An improved method of finishing a silicon part utilizes a rotatable grinding wheel having diamond particles and a bonding agent, and a plurality of grit materials. The grinding wheel is dressed to form a wheel with a grinding surface having a plurality of diamond particles, and thereafter a bonding agent is removed from the grinding wheel surface without significant removal of the plurality of diamond particles. An enhanced lubricity material may be applied to the grinding wheel, and the surface of the silicon part then ground, preferably while cooling the silicon part. The surface of the silicon part may then be finished with a plurality of grit materials. A single digit RMS surface finish on a silicon part may be obtained.

Abstract: A polishing surface cleaning method and apparatus are capable of effectively removing the polishing residue from the polishing surface of a polishing table in a polisher by using a minimal amount of cleaning liquid. In the polisher, a workpiece to be polished is pressed against the polishing surface of the polishing table to polish the workpiece by relative motion between the polishing surface and the workpiece. The polishing surface cleaning apparatus uses mixing spray nozzles for mixing together a cleaning liquid and a gas and spraying the resulting fluid mixture on the polishing surface to clean it.

Abstract: A machine for machining a flange on a work piece comprises a rotated tool, chucking equipment and feeding means for relative displacement between work piece and tool, a tubular cylindrical housing with longitudinal axis and an inner space, with an axis offset from the housing axis; a shaft with a recess in the inner space for angular displacement therein, a motor in the recess, a spindle coupled to the motor extending along the housing axis and cooperating with the chucking opening, the tool comprising a peripheral abrasive material at the central through opening, which extends axially beyond at least one of the lid surfaces, the shaft arranged in inner space for causing work piece to approach and contact the abrasive material at angular displacement of the shaft.

Abstract: A method and apparatus for qualifying a polishing pad used in chemical mechanical planarization of semiconductor wafers is described. The apparatus includes at least one qualifying member including at least one collimated hole structure, wherein the collimated hole structure forms multiple channels within the qualifying member. The method includes providing at least one qualifying member formed with at least one capillary tube array, wherein the capillary tube array forms multiple channels within the qualifying member, pressing the qualifying member against the polishing pad, and moving the qualifying member along the polishing pad along a trajectory to simulate the polishing of a semiconductor wafer.

Abstract: With a time control means for a wetting treatment of a fixed abrasive platen provided, the fixed abrasive platen is set in a good wet state in advance prior to the start of polishing. The time control means may be incorporated in the body of a flattening/machining apparatus, or alternatively a wetting retaining mean may newly be separately provided instead. While the fixed abrasive platen is rapidly transformed through expansion due to wetting, the wetting treatment is desirably performed till a transformation ratio thereof is stabilized at 0.0005% or less.

Abstract: A planarization apparatus has a stocker in which a dressing board is stored. The dressing board is picked up from the stocker and mounted on a chuck table by a transport robot. Then, dressing of a grinding wheel or a polishing pad is performed with the dressing board. Thereafter, the used dressing board is withdrawn into the stocker by the transport robot after the process through cleaning and drying.

Abstract: A polishing apparatus for polishing a workpiece such as a semiconductor wafer has a turntable with a polishing cloth mounted on an upper surface thereof, and a top ring for holding a workpiece and pressing the workpiece against the polishing cloth under a first pressing force to polish the workpiece. The top ring has a recess defined therein for accommodating the workpiece therein. A presser ring is vertically movably disposed around the top ring, and is pressed against the polishing cloth under a variable second pressing force. The first and second pressing forces are variable independently of each other, and the second pressing force is determined based on the first pressing force. Relative rotation between the top ring and the presser ring is achieved during polishing.

Abstract: Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.

Abstract: The description deals with a facility for dressing of a grindstone (1) for grinding of a running surface structure of a ski, which facility consists of a rotating drive (7) for the grindstone (1), of a dresser (2) adjustable to the circumferential surface of the grindstone (1) and equipped with at least one cutting insert, and of a feed drive (6) for the axially parallel relative movement of the dresser (2) against the grindstone (1). To create favorable construction features it is suggested to provide a controlling system (8) for the feed drive (6) and/or the rotating drive (7), equipped with a control program memory (9) selectable via an input unit (10) and with an evaluation circuit (12) connected to the control program memory (9) for the program-sensitive definition of the position-dependent switching points for the rate of the feed drive (6) and/or the rotating drive (7).

Abstract: A polishing apparatus is used for polishing a workpiece such as a semiconductor wafer to a flat mirror finish by a combination of chemical polishing and mechanical polishing. The polishing apparatus includes a turntable with a polishing cloth mounted on an upper surface thereof, a top ring for supporting the workpiece to be polished and pressing the workpiece against the polishing cloth, and a dressing tool for dressing the polishing cloth on the turntable. The polishing apparatus further includes a cover which covers an upper surface of the turntable for preventing liquid on the turntable from being scattered, and inserting holes formed in an upper wall of the cover for inserting the top ring and the dressing tool therethrough.

Abstract: A slurry dispensing unit for a chemical mechanical polishing apparatus equipped with multiple slurry dispensing nozzles is disclosed. The slurry dispensing unit is constructed by a dispenser body that has a delivery conduit, a return conduit and a U-shape conduit connected in fluid communication therein between for flowing continuously a slurry solution therethrough and a plurality of nozzles integrally connected to and in fluid communication with a fluid passageway in the delivery conduit for dispensing a slurry solution. The multiple slurry dispensing nozzles may either have a fixed opening or adjustable openings by utilizing a flow control valve at each nozzle opening.

Abstract: A multi-functional conditioner set for a chemical-mechanical polishing station. The multi-functional conditioner set has at least two conditioning heads each made from a different material such as diamond dust and nylon. The multi-functional conditioner set also includes an ejection tube for delivering chemical agents and de-ionized water to the conditioning heads. Moreover, a vibrator is attached to the ejection tube to transmit ultrasonic or megasonic vibration to the chemical agents and de-ionized water. The conditioning heads can be arranged in various combinations and the ejection tube set to various control settings. Hence, a polishing pad can be cleaned or reconditioned and residual diamond particles on the polishing pad can be removed. Furthermore, the conditioner set occupies only a single area above the polishing table of the polishing station.

Abstract: A polishing apparatus has a polishing table having a polishing surface, a carrier for carrying a plate-like member and bringing the plate-like member into contact with the polishing surface, and a dresser including a dressing tool adapted to be brought into contact with the polishing surface to dress or normalize the polishing surface. The carrier is movable along a first path between a work position for bringing into contact the plate-like member with the polishing surface and a rest position. The dresser is movable along a second path between a work position for bringing the dressing tool into contact with the polishing surface and a rest position. The first and second paths have a common overlapping area. A contact prevention device is provided to prevent the carrier and the dresser from coming into contact with each other.

Abstract: A method of taking up wear of a grinding wheel on a machine for grinding sheets of glass, whereby the position of an abrasive surface of the grinding wheel, initially set to an ideal work position such as to obtain a sheet of a given size, is adjusted, following wear of the grinding wheel, by moving the abrasive surface towards a reference surface on the machine, positioned facing and at a predetermined distance from the abrasive surface when the abrasive surface is in the ideal work position; determining the instant of contact between the abrasive surface and the reference surface; arresting the grinding wheel at the instant of contact; and moving the abrasive surface away from the reference surface to an adjustment distance at least equal to the predetermined distance.

Abstract: A method and apparatus for polishing and planarizing workpieces such as semiconductor wafers is presented. Conditioning rings, which are used to condition polishing pads used in the planarization or polishing of semiconductor wafers, are shown which utilize brazed diamond technology in association with a coating of a titanium nitride containing composition or a thin film diamond deposition in order to reduce the fracturing and loss of cutting elements bonded to the conditioning ring.

Abstract: A polishing apparatus comprises a polishing table having a polishing surface thereon, a top ring for pressing a workpiece to be polished against the polishing surface, and a dresser for dressing the polishing surface on the polishing table. The dresser comprises a dressing element provided on a surface of the dresser for dressing the polishing surface by sliding contact with the polishing surface, and an ejection nozzle provided on the surface of the dresser for ejecting a fluid supplied from a fluid source toward the polishing surface.

Abstract: A method and apparatus for mechanical and/or chemical-mechanical planarization of microelectronic substrates. In one embodiment, a conditioning device for removing waste matter from a microelectronic planarizing medium has a support assembly with a support member and a conditioning head attached to the support member. The support member may be a pivoting arm or gantry assembly that carries the condition head over the planarizing medium. The conditioning head may have a non-contact conditioning element that transmits a form of non-contact energy to waste matter on the planarizing medium. The non-contact conditioning element, for example, may be an emitter that transmits a selected waveform capable of penetrating the planarizing medium and the waste matter on the planarizing medium. In operation, the selected non-contact energy may impart energy to the waste matter that weakens or breaks bonds in the waste matter and/or bonds between the planarizing medium and the waste matter.

Abstract: A method and apparatus for polishing and planarizing workpieces such as semiconductor wafers is presented. Conditioning rings, which are used to condition polishing pads used in the planarization or polishing of semiconductor wafers, are shown which utilize brazed diamond technology in association with a coating of a titanium nitride containing composition or a thin film diamond deposition in order to reduce the fracturing and loss of cutting elements bonded to the conditioning ring.

Abstract: A method and apparatus for chemical mechanical polishing a semiconductor wafer by providing a novel high pressure mixture of gas and liquid in a pulsation mode for eliminating residual slurry, by-products, and slurry abrasive particles on or in the polishing pad.

Abstract: A method and apparatus for polishing and planarizing workpieces such as semiconductor wafers is presented. Conditioning rings, which are used to condition polishing pads used in the planarization or polishing of semiconductor wafers, are shown which utilize brazed diamond technology in association with a coating of a titanium nitride containing composition or a thin film diamond deposition in order to reduce the fracturing and loss of cutting elements bonded to the conditioning ring.

Abstract: A method and apparatus for polishing and planarizing workpieces such as semiconductor wafers is presented. Conditioning rings, which are used to condition polishing pads used in the planarization or polishing of semiconductor wafers, are shown which utilize brazed diamond technology in association with a coating of a titanium nitride containing composition or a thin film diamond deposition in order to reduce the fracturing and loss of cutting elements bonded to the conditioning ring.

Abstract: This invention relates to a polishing machine for polishing an article such as a semiconductor wafer. A movable arm is located at a liquid supply position for supplying a liquid such as a polishing liquid onto a polishing surface of a turntable. The arm is also adapted to be moved to and held at a retracted position radially outside the polishing surface. At the liquid supply position, liquid supply nozzles supported on the arm are brought into a condition such that the nozzles are close to a position on the polishing surface where the liquid is to be supplied, whereby the liquid is accurately supplied onto the position. Holding the arm at the retracted position makes it easy to conduct a maintenance work for the polishing surface and so on.

Abstract: A conditioner assembly and a conditioner back support for conditioning a polishing pad of a chemical mechanical polishing device. The conditioner assembly comprises a conditioning head having a gimbal assembly, a shaft engaged to the conditioning head, and a linear torque bearing assembly slidably receiving the shaft. The linear torque bearing assembly is configured to operatively rotate the shaft assembly contemporaneously with allowing the shaft to extend and retract from a first open end of the linear torque bearing assembly. The conditioner assembly additionally comprises a bellows secured over the first open end and engaged to the conditioning head and a bearing housing disposed over a second open end of the linear torque bearing assembly. The conditioner back support respectively opposes the conditioner assembly such that the polishing belt supporting the polishing pad is disposed intermediate to the conditioner back support and the conditioner assembly.

Abstract: The time to grind a workpiece can be reduced by selecting a grinding wheel whose width is not substantially greater than wheel strength considerations require, and which may therefore be less than the axial length of the region to be ground providing a work rest or work steady to increase the workpiece stiffness if required, and performing a succession of plunge grinding steps so as to grind the whole of the said axial region. Typically the grinding wheel is an electroplated CBN wheel, and the width of the grinding wheel selected is the narrowest permissible given the desired feed rate and motive power available.

Abstract: In a machine for profiling and polishing works of marble and the like, it is possible to automatically replace one grinding wheel with another one in any working step whatsoever. On the same carriage (C) bearing the spindle, is fitted a device (R) consisting of a turning plate (25) provided with recesses, having wedge-shaped internal edges (29a), onto which are carried the replacement grinding wheels fixed to a coupling head (30). The turning plate (25) is made to approach the spindle (13), it withdraws the grinding wheel, complete with its attachment, to be replaced, once the spindle has been detached from the attachment, it turns by one or more steps to present a new grinding wheel with its corresponding attachment, and it is withdrawn to a waiting position until the next replacement.

Abstract: A polishing media magazine for improved polishing. The polishing media magazine may include a conditioning element for rapid, uniform conditioning and cleaning of the polishing media. The polishing media magazine may include polishing media having sections of raised elevation to contain the fluid and may include a polishing support platen having features adapted to urge the edges of the polishing media upwards. The polishing media may be roll fed from a supply roll across a support platen and onto a take-up roll.

Abstract: A system and method are presented for selectively conditioning a surface of a polishing pad of a CMP apparatus in order to achieve a desired surface profile of a semiconductor wafer. The semiconductor wafer may be subjected to a CMP operation using the CMP apparatus following the conditioning. The present CMP apparatus includes a polishing pad having an underside surface mechanically coupled to a substantially planar surface of a platen, an abrasive surface, and a measurement system. The platen and abrasive surface may be rotatable about respective rotational axes. The present conditioning method includes selecting a region of an upper “polishing” surface of the polishing pad (e.g., a CMP region) encircling a rotational axis of the platen and bounded by first and second radial distances from the rotational axis of the platen.