Abstract: This disclosure provides for improvements in managing multi-drive, multi-die or multi-plane NAND flash memory. In one embodiment, the host directly assigns physical addresses and performs logical-to-physical address translation in a manner that reduces or eliminates the need for a memory controller to handle these functions, and initiates functions such as wear leveling in a manner that avoids competition with host data accesses. A memory controller optionally educates the host on array composition, capabilities and addressing restrictions. Host software can therefore interleave write and read requests across dies in a manner unencumbered by memory controller address translation. For multi-plane designs, the host writes related data in a manner consistent with multi-plane device addressing limitations. The host is therefore able to “plan ahead” in a manner supporting host issuance of true multi-plane read commands.

Abstract: A memory device includes an external information input circuit configured to generate a burst mode signal and a write command pulse for a write operation, by receiving external information for the write operation; and a write operation control circuit configured to generate a write control pulse for storing internal data in a cell array, from the write command pulse when a first burst mode is performed on the basis of the burst mode signal, and to control whether to generate the write control pulse from the write command pulse when a second burst mode is performed on the basis of the burst mode signal.

Abstract: A storage system includes a management node and a plurality of storage nodes forming a redundant array of independent disks (RAID). When the management node determines that not all data in an entire stripe is updated based on a received write request, the management node sends an update data chunk obtained from to-be-written data to a corresponding storage node. The storage node does not directly update, based on the received update data chunk, a data block stored in a storage device of the storage node, but store the update data chunk into a non-volatile memories (NVM) cache of the storage node and send the update data chunk to another storage node for backup. According to the data updating method, write amplification problems caused in a stripe update process can be reduced, thereby improving update performance of the storage system.

Abstract: Systems, devices and automated processes provide robust, computationally-efficient and secure protection of media content or other electronic data stored on a user-supplied storage device through the use of efficient file system encryption. Only certain portions of the content are encrypted by the host device, thereby reducing the computational demand in comparison to encrypting all of the content. By selecting the particular portions to encrypt, the formatting and structure of the stored data can be concealed, thereby making the use of the unencrypted content very difficult, if not impossible.

Abstract: A method includes receiving, by a processing device, an indication that a media management operation performed with respect to a block of a memory sub-system satisfies a performance condition, wherein the block maintains first data stored using a first write mode, in response to receiving the indication, determining, by the processing device, that a cache block of a cache area of the memory sub-system satisfies an endurance condition, wherein the cache block maintains second data stored using a second write mode, and changing, by the processing device, a write mode for the cache block from the second write mode to the first write mode responsive to determining that the cache block satisfies the endurance condition.

Abstract: A system includes a memory device having a plurality of groups of memory cells and a processing device communicatively coupled to the memory device. The processing device is be configured to read a first group of memory cells of the plurality to determine a calibrated read voltage associated with the group of memory cells. The processing device is further configured to determine, using the calibrated read voltage associated with the first group of memory cells, a bit error rate (BER) of a second group of memory cells of the plurality. Prior to causing the memory device to perform a copyback operation on the plurality of groups of memory cells, the processing device is further configured to determine whether to perform a subsequent read voltage calibration on at least the second group of the plurality based, at least partially, on a comparison between the determined BER and a threshold BER.

Abstract: In an approach to improve the field of multi-cloud environments by detecting data corruption between storage systems. Embodiments perform information tunneling on data transferring between a source storage system and a target storage system. Further, embodiments determine a checksum data of a data payload does not match an Internet Protocol (IP) packet extracted checksum and a blockchain based checksum and compare the checksum data at the target storage system with the IP packet extracted checksum and the blockchain based checksum to identify one or more checksum mismatches. Additionally, embodiments identify a corruption in a data payload based on the comparison between the checksum data at the target storage system and the IP packet extracted checksum and the blockchain based checksum, validate the corruption in the data payload, and update respective entities of identified corruption in the data payload.

Abstract: A memory system may include a nonvolatile memory device comprising a first area and a second area having a higher data I/O operation speed than the first area, and a controller suitable for performing a first read operation on hot data having a hot property, among data stored in the first area. The controller may control the nonvolatile memory device to copy the hot data into the second area during the first read operation, and access the hot data copied in the second area, when a second read operation on the hot data is requested after the first read operation.

Abstract: A device, method and system is directed to fast data storage on a block storage device. New data is linearly written to an empty write block. A location of the new data is tracked. Meta data associated with the new data is linearly written. A lookup table may be updated based in part on the meta data. The new data may be read based the lookup table configured to map a logical address to a physical address.

Abstract: Techniques described herein manage failed storage devices. A number of failed storage devices is determined to exceed a number of redundancies in a storage configuration of the storage system. The status of a failed storage device is changed to permit solely read operations. Valid data from the failed storage device is copied to a spare storage device. Invalid data on the failed storage device is reconstructed based on corresponding data from other storage devices, and the reconstructed data is stored on the spare storage device. The failed storage device is removed from the storage system.

Abstract: This disclosure provides for improvements in managing multi-drive, multi-die or multi-plane NAND flash memory. In one embodiment, the host directly assigns physical addresses and performs logical-to-physical address translation in a manner that reduces or eliminates the need for a memory controller to handle these functions, and initiates functions such as wear leveling in a manner that avoids competition with host data accesses. A memory controller optionally educates the host on array composition, capabilities and addressing restrictions. Host software can therefore interleave write and read requests across dies in a manner unencumbered by memory controller address translation. For multi-plane designs, the host writes related data in a manner consistent with multi-plane device addressing limitations. The host is therefore able to “plan ahead” in a manner supporting host issuance of true multi-plane read commands.

Abstract: A controller for controlling a memory device is provided to include: a request receiver configured to receive a request including a logical address from a host; a dependency checker configured to acquire the request from the request receiver and check a dependency of the request; a map manager configured to generate a command including a physical address mapped to the logical address of the request in response to a result of checking that the request has no dependency on the prior incomplete request; and a command submitter configured to provide the memory device with the command generated by the map manager, wherein the request receiver, the dependency checker, the map manager and the command submitter are structured to configure a data pipeline such that operations of the request receiver, the dependency checker, the map manager, and the command submitter deliver are performed in series.

Abstract: A value setting associated with one or more parameters of a host-side interface and a memory-side interface of an input/output (I/O) expander is configured to enable Open NAND Flash Interface (ONFI)-compliant communications between a host system and a target memory die of a memory sub-system. The I/O expander processes one or more ONFI-compliant communications between the host system and the target memory die, wherein the one or more ONFI-compliant communications relate to execution of a memory access operation.

Abstract: A method of cache programming of a NAND flash memory in a triple-level-cell (TLC) mode is provided. The method includes discarding a lower page of a first programming data from a first set of data latches in a plurality of page buffers when a first group of logic states are programmed and verified. The page buffers include the first, second and third sets of data latches configured to store the lower page, a middle page and an upper page of programming data, respectively. The method also includes uploading a lower page of second programming data to a set of cache latches, transferring the lower page of the second programming data from the set of cache latches to the second set of data latches after the discarding the middle page of the first programming data, and uploading a middle page of the second programming data to the set of cache latches.

Abstract: A memory module comprises a volatile memory subsystem including DRAM, a non-volatile memory subsystem including Flash memory, and a module control device. The Flash memory includes main Flash providing a main Flash memory space and scratch Flash providing a scratch Flash memory space. The module control device is configured to receive a request from the memory controller to move one or more segments of data in a first Flash block in the main Flash to the DRAM and to, for each respective segment of data: select a respective set of pages in the DRAM; transfer respective data stored in the respective set of pages from the DRAM to a corresponding segment in the scratch Flash; and transfer the respective segment of data to the respective set of pages in the DRAM. Thus, data can be moved segment by segment between the DRAM and the Flash memory.

Abstract: A memory system may include: a nonvolatile memory device; and a controller suitable for generating first map information which maps physical addresses of the nonvolatile memory device to logical addresses received from a host, selecting some segments of the first map information as second map information, and outputting the second map information to the host, the controller may determine whether the second map information is updated, and may determine updated map segments as third map information, and the controller may output information to the host indicating the third map information corresponding to a command received from the host.

Abstract: A storage device may detect errors during data transfer. Upon detection of one or more data transfer errors, for example, the storage device can begin to scan pages within a plurality of memory devices for uncorrectable error correction codes. Once scanned, a range of pages within the plurality of memory devices with uncorrectable error correction codes associated with a write abort error may be determined. The stage of multi-pass programming achieved on each page within that range is then established. Once calculated, the previously aborted multi-pass programming of each page within the range of pages can continue until completion. Upon completion, normal operations may continue without discarding physical data location.

Abstract: Methods, systems, and devices for a memory access gate are described. A memory device may include a controller, memory dice, and a pad for receiving an externally provided control signal, such as a chip enable signal. The memory device may include a switching component for selecting the externally provided control signal or an internally generated control signal. The controller may provide the selected control signal to a memory die. The memory device may determine whether it is operating in a first mode or a second mode, and select the externally provided control signal or the internally generated control signal based on the determination. The first mode may be a diagnostic mode in some cases. The controller may include a secure register whose value may impact or control the switching. An authenticated host device may direct the controller to write the value to the secure register.

Abstract: The present disclosure includes systems, apparatuses, and methods related to generating a random data value. For example, a first read operation may be performed on a memory cell programmed to a first state, wherein the first read operation is performed using a first read voltage that is within a predetermined threshold voltage distribution corresponding to the first state. A programming signal may be applied to the memory cell responsive to the first read operation resulting in a snapback event, wherein the programming signal is configured to place the memory cell in a second state. A second read operation may be performed to determine whether the memory cell is in the first state or the second state using a second read voltage that is between the predetermined threshold voltage distribution corresponding to the first state and a second threshold voltage distribution corresponding to the second state.

Abstract: A chiplet system can include a Serial Peripheral Interface (SPI) bus for communication. A controller or primary device coupled to the SPI bus can generate a message with read or write instructions for one or more secondary devices. In an example, the primary device can be configured to read information from a secondary device about whether the secondary device supports parity-protected data communications. The primary device can be configured to selectively send or receive parity-protected data communications depending on a capability of the secondary device to support parity.

Abstract: A display device includes a display panel including display pads, display connection pads disposed on a side surface of the display panel and connected to the display pads, a touch member including touch pads disposed on a display surface perpendicular to the side surface of the display panel, and touch connection pads overlapping a top surface of the touch member and the side surface of the display panel and connected to the touch pads. The side surface of the display panel includes a first area overlapping the display connection pads, a second area overlapping the touch connection pads, and a third area which does not overlap the display connection pads and does not overlap the touch connection pads. The first area, the second area, and the third area are located on a same plane.

Abstract: A computational storage device includes a non-volatile memory (NVM) device; and a storage controller configured to control the NVM device. The storage controller includes: a computation processor configured to execute an internal application to generate an internal command; a host interface circuit configured to receive a host command from an external host device, to receive the internal command from the computation processor, and to individually process the received host command and the received internal command; a flash translation layer (FTL) configured to perform an address mapping operation based on a result of the processing of the host interface circuit; and a memory interface circuit configured to control the NVM device based on the address mapping operation of the FTL.

Abstract: This disclosure provides for improvements in managing multi-drive, multi-die or multi-plane NAND flash memory. In one embodiment, the host directly assigns physical addresses and performs logical-to-physical address translation in a manner that reduces or eliminates the need for a memory controller to handle these functions, and initiates functions such as wear leveling in a manner that avoids competition with host data accesses. A memory controller optionally educates the host on array composition, capabilities and addressing restrictions. Host software can therefore interleave write and read requests across dies in a manner unencumbered by memory controller address translation. For multi-plane designs, the host writes related data in a manner consistent with multi-plane device addressing limitations. The host is therefore able to “plan ahead” in a manner supporting host issuance of true multi-plane read commands.

Abstract: The present disclosure generally relates to data storage devices, such as solid state drives, and effective power management of the data storage device. The data storage device includes a controller, where the controller is configured to predict when a host device will send a command to enter a low power state, prepare the data storage device to enter the low power state, and receive a command to enter the low power state after the predicting and preparing. If the data storage device is idled for greater than a threshold value, then the data storage device prepares to transition to a low power state but will wait to enter the lower power state until receiving a request from a host device.

Abstract: Systems and methods are disclosed including a memory component and a processing device, coupled to the memory component. The processing device can program a block of the memory component using a first type of memory cells storing a first number of bits per memory cell. The processing device can then determine that an amount of memory used of the memory component is greater than a capacity threshold. Responsive to determining that a frequency of access to the block meets a criterion, the processing device can then program the block using a second type memory cells storing a second number of bits per memory cell, wherein the second number of bits exceeds the first number of bits.

Abstract: Based on power on of an electronic device, a location of first data in a NAND flash memory of an electronic device is determined. The first data is transmitted to a shadow RAM of the electronic device, outputting the first data is output from the shadow RAM to a host device of the electronic device through a serial peripheral interface (SPI) when accessing the location of the first data in the NAND Flash memory.

Abstract: A data storage device includes a memory device including a plurality of endurance groups and a controller coupled to the memory device. The controller is configured to allocate tokens to the plurality of endurance groups, determine whether endurance group has sufficient tokens to perform an operation, and either deny the operation or approve the operation. The operation is selected from the group consisting of: garbage collection, relocation of data, and read scrubbing. Each operation has the same or different cost as another operation. The controller is further configured to set thresholds for each endurance group of the plurality of endurance groups and adjust a threshold for one or more endurance groups of the plurality of endurance groups. The controller is further configured to determine whether the operation will breach quality of service for other endurance groups.

Abstract: Embodiments are directed to memory protection with hidden inline metadata. An embodiment of an apparatus includes processor cores; a computer memory for the storage of data; and cache memory communicatively coupled with one or more of the processor cores, wherein one or more processor cores of the plurality of processor cores are to implant hidden inline metadata in one or more cachelines for the cache memory, the hidden inline metadata being hidden at a linear address level.

Abstract: A data storage apparatus may include: a storage comprising a plurality of memory blocks; and a controller configured to: configure a write buffer pool by selecting a plurality of first memory blocks which are some of the plurality of memory blocks, manage remaining memory blocks except for the first memory blocks as second memory blocks, exclude one or more of the first memory blocks, whose data are migrated to the second memory blocks and add one or more of the second memory blocks to the write buffer pool.

Abstract: A write command is received, for example, from a host system, which operates on a first logical address range. A read command is received that specifies a second logical address range that matches the first logical address range. Responsive to determining that a deallocate command has been received after the write command, zero-filled data is returned in response to the read command.

Abstract: A resolution adjustment method applied to image display of a display device includes the display device providing a display menu to obtain a display layout composed of a plurality of display areas, the display device performing a resolution parameter setting on each display area according to the display layout and an original resolution parameter of the display device, the display device generating an updated product code and a plurality of updated resolution parameters according to an original product code and the original resolution parameter of the display device and each resolution parameter setting, and each image source reading the updated product code and the updated resolution parameter and outputting an image corresponding to the updated resolution parameter via a corresponding transmission port to the corresponding display area.

Abstract: An example memory sub-system includes a memory device and a processing device, operatively coupled to the memory device. The processing device is configured to initiate a scan process on a plurality of block families of the memory device; responsive to determining, based on the scan process, that a first block family of the plurality of block families and a second block family of the plurality of block families meet a combining criterion, merge the first block family and the second block family; and responsive to determining that a terminating condition has been satisfied, terminate the scan process.

Abstract: A plurality of storage nodes within a single chassis is provided. The plurality of storage nodes is configured to communicate together as a storage cluster. The plurality of storage nodes has a non-volatile solid-state storage for user data storage. The plurality of storage nodes is configured to distribute the user data and metadata associated with the user data throughout the plurality of storage nodes, with erasure coding of the user data. The plurality of storage nodes is configured to recover from failure of two of the plurality of storage nodes by applying the erasure coding to the user data from a remainder of the plurality of storage nodes. The plurality of storage nodes is configured to detect an error and engage in an error recovery via one of a processor of one of the plurality of storage nodes, a processor of the non-volatile solid state storage, or the flash memory.

Abstract: Techniques are provided for object store mirroring. Data within a storage tier of a node may be determined as being data to tier out to a primary object store based upon a property of the data. A first object is generated to comprise the data. A second object is generated to comprise the data. The first object is transmitted to the primary data store for storage in parallel with the second object being transmitted to a mirror object store for storage. Tiering of the data is designated as successful once acknowledgements are received from both the primary object that the first object was stored and the mirror object store that the second object was stored.

Abstract: Several embodiments of memory devices and systems with selective page-based refresh are disclosed herein. In one embodiment, a memory device includes a controller operably coupled to a main memory having at least one memory region comprising a plurality of memory pages. The controller is configured to track, in one or more refresh schedule tables stored on the memory device and/or on a host device, a subset of memory pages in the plurality of memory pages configured to be refreshed according to a refresh schedule. In some embodiments, the controller is further configured to refresh the subset of memory pages in accordance with the refresh schedule.

Abstract: An average inter-pulse delay of a data unit of the memory device is calculated. An average temperature of the data unit is calculated. A first scaling factor based on the average inter-pulse delay and a second scaling factor based on the average temperature is obtained. A media management metric based on the first scaling factor and the second scaling factor is calculated. Responsive to determining that the media management metric satisfies a media management criterion, a media management operation on the data unit at a predetermined cycle count is performed.

Abstract: The present disclosure relates to an electronic device. According to the present disclosure, a storage device includes a memory controller acquiring a valid address reflecting a bad block more quickly and a plurality of memory devices each including a plurality of memory blocks included in each of a plurality of planes.

Abstract: A storage system with several integrated components and method for use therewith are provided. In one embodiment, a storage system comprising: a plurality of non-volatile memory devices; a controller in communication with the plurality of non-volatile memory devices; a plurality of data buffers in communication with the controller and configured to store data sent between the controller and an input/output bus; and a command and address buffer configured to store commands and addresses sent from a host, wherein the command and address buffer is further configured to synchronize data flow into and out of the plurality of data buffer; wherein at least three of the above components are integrated with each other.

Abstract: In general, embodiments relate to a managing a Redundant Array of Independent Disks (RAID) group. The embodiments include determining a minimum and maximum set of spare disks to allocate to the RAID group, wherein the RAID group comprises a plurality of active members, allocating the minimum number of spare members to the RAID group, allocating an additional spare member to the RAID group, setting a mode of the additional spare member to storage mode, enabling, after the setting, the RAID controller to store data in the plurality of active members and in the additional spare member, wherein the plurality of active members, the minimum number of spare members, and the additional spare member comprise persistent storage.

Abstract: Embodiments of the disclosure relate to a memory system and an operating method thereof. The memory system is configured to select, among the plurality of memory blocks, one or more target memory blocks operable to store user data to be accessed by a host which requests the memory system to write data, and determine whether to control a point of execution time of a command received from the host, based on valid page counts of respective target memory blocks.

Abstract: A method includes determining respective valid translation unit counts of a block of non-volatile memory cells over a period of time, determining a rate of change of the respective valid translation unit counts of the block of non-volatile memory cells over the period of time, comparing the rate of change of the valid translation unit counts to a bin transition rate, and based on comparing the rate of change of the valid translation unit counts to the bin transition rate, performing a media management operation on the block of non-volatile memory cells.

Abstract: A data storage apparatus includes a storage including a plurality of planes, which include a plurality of pages, and a controller configured to control the storage to read data by grouping the plurality of pages as a page group in an interleaving unit, manage pages in which valid data are stored, among the plurality of pages, as a first bitmap table, and manage a second bitmap table generated by compressing the first bitmap table in a page group unit.

Abstract: A method includes receiving a command to write data to a memory device and writing the data to a first memory tier of the memory device. The first memory tier of the memory device is a dynamic memory tier that utilizes single level cells (SLCs), multi-level cells (MLCs), and triple level cells (TLCs). The method further includes migrating the data from the first memory tier of the memory device to a second memory tier of the memory device. The second memory tier of the memory device is a static memory tier that utilizes quad level cells (QLCs).

Abstract: Adaptive storage processing for storage-as-a-service, including detecting, by a cloud-based monitoring system, a storage system state for a storage system by monitoring the storage system in real-time remotely via a network; selecting, by the cloud-based monitoring system based on the storage system state, an entry in a tunables repository, wherein the entry in the tunables repository comprises a tunable parameter for the storage system state; accessing, by the cloud-based monitoring system via the network, a gateway for the storage system; and modifying, by the cloud-based monitoring system via the gateway, the tunable on the storage system based on the tunable parameter for the storage system state.

Abstract: A memory device is provided in which blocks of memory cells are divided into separate portions or sub-blocks with respective sets of word line switching transistors. The sub-blocks can be arranged on a substrate on opposite sides of a dividing line, where a separate set of bit lines is provided on each side of the dividing line. Each block has a row decoder which provides a common word line voltage signal to each sub-block of the block. However, each sub-block can have an independent set of word line switching transistors so that the common word line voltage signal can be passed or blocked independently for each sub-block. The blocks of memory cells can be provided on a first die which is inverted and bonded to a second die which includes the sets of word line switching transistors.

Abstract: A computer system receives a data stream with a plurality of packets. In response to receiving the data stream with the plurality of packets, the computer system distributes individual packets of the plurality of packets to the inputs of each of a plurality of processing nodes. Each respective processing node has a local queue storing a respective number of packets to be processed by the respective processing node. Distributing a respective packet of the plurality of packets to the inputs of each of the plurality of processing nodes includes delaying sending the respective packet to each of the plurality of processing nodes by a delay time that is a non-linear function of an average number of packets in the local queues of the respective processing nodes.

Abstract: A storage controller including: a host interface circuit receiving first, second, third and fourth requests corresponding to first, second, third and fourth logical addresses; a memory interface circuit communicating with first nonvolatile memories through a first channel and second nonvolatile memories through a second channel; a first flash translation layer configured to manage the first nonvolatile memories; and a second flash translation layer configured to manage the second nonvolatile memories, the first flash translation layer outputs commands corresponding to the first and fourth requests through the first channel, and the second flash translation layer outputs commands respectively corresponding to the second and third requests through the second channel, and a value of the first logical address is smaller than a value of the second logical address, and a value of the third logical address is smaller than a value of the fourth logical address.

Abstract: Embodiments of the present disclosure relate to a memory system and an operating method of the memory system. According to embodiments of the present disclosure, a memory system may divide and manage the plurality of memory dies into a plurality of memory die groups, may set a first super memory block including at least one of memory blocks included in a first memory die group, and a second super memory block including at least one of memory blocks included in a second memory die group, may determine whether to set an extended super memory block in which all or part of the first super memory block and all or part of the second super memory block are merged, and may write a write data to the extended super memory block in an interleaving manner when writing the write data requested by a host.

Abstract: According to one embodiment, a memory device includes a nonvolatile semiconductor memory having physical storage areas that includes a user area externally accessible and are divided into management units and a control unit. The control unit receives a control command having a first argument to designate a sequential write area and a read command or a write command, assigns a management unit represented by an address of the read command or the write command as the sequential write area, and changes memory access control by judging whether an address of a memory access command to access the user area indicates access in the sequential write area whose size is equivalent to the management unit.

Abstract: A mapping table management method, a memory control circuit unit, and a memory storage device are provided. The method includes: receiving a read command from a host system, wherein the read command indicates reading a first data stored in at least one first logical address; and searching whether a relation management information reflects that a first group static mapping table recording the first logical address is related to a dynamic mapping table. In response to a search result reflecting that the first group static mapping table is related to the dynamic mapping table, the dynamic mapping table is searched to obtain a first physical address mapped by the first logical address. And if not related, the first group static mapping table among group static mapping tables is searched to obtain a second physical address mapped by the first logical address.