Abstract: An operation method a storage device including a nonvolatile memory and a memory controller configured to control the nonvolatile memory is provided. The operation method includes erasing memory cells of the nonvolatile memory using the memory controller and prohibiting an erase of the erased memory cells for a critical time using the memory controller.

Abstract: A storage device may include, at least one memory device including at least a first single-level cell (SLC) region, a second SLC region, and at least one multi-level cell (MLC) region, the first SLC region having a higher data read speed than the second SLC region, and the second SLC region having a higher data read speed than the at least one MLC region, and a storage controller configured to control the migration of data among the first SLC region, the second SLC region, and the at least one MLC region.

Abstract: A memory device includes a cell array including a plurality of pages and a control logic configured to control program and read operations of the cell array. The control logic controls the program and read operations to store first through N-th codewords in a first page among the pages and program a page parity corresponding in common to the first through N-th codewords to the first page in response to a program command for a page unit and to selectively read the first codeword among the first through N-th codewords in response to a read command for a sub-page unit, where N is an integer of at least 2. The first codeword includes first sub-page data and a first sub-parity corresponding thereto, and the first sub-parity includes information for correcting an error in the first sub-page data through error correction code (ECC) decoding independently performed on each codeword.

Abstract: A data transmission and protection system includes a plurality of solid-state drives (SSDs), a storage medium, a central processing unit (CPU) and a massively parallel processor (MPP). The storage medium storing an application program and a redundant array of independent disks (RAID) configuration. The CPU is coupled to the storage medium and configured to execute the application program to generate a virtual SSD interface for the plurality of SSDs according to the RAID configuration. The MPP is coupled to the virtual SSD interface and the plurality of SSDs. The MPP is configured to execute data exchange with the plurality of SSDs in response to a command received from the virtual SSD interface.

Abstract: A system and method for improving storage system performance by reducing or avoiding load spike amplification when performing garbage collection is disclosed. A storage controller in a storage system tracks system load including write load and read load, as well as available free segments. The storage controller uses these tracked values as inputs and, with these inputs, generates a garbage collection rate. Where read load is included, a scaled portion of the read load is taken into consideration so that, as the number of free segments nears the minimum amount desired and to prevent garbage collecting too slowly, the read load is gradually excluded from the garbage collection rate determination. The garbage collection rate is therefore responsive to system load so that, in times of high system load, the rate reduces as much as is safe so that the write load takes priority with computing resources of the storage controller.

Abstract: A system includes a first memory device of a first memory type, a second memory device of a second memory type, and a third memory device of a third memory type. The system further includes a processing device to retrieve one or more sections of data from the first memory device comprising a first memory type, and retrieve one or more remaining sections of data from the second memory device comprising a second memory type, wherein the one or more remaining sections of data from the second memory device are associated with the one or more sections of data from the first memory device. The processing device is further to combine the one or more sections of data from the first memory device comprising the first memory type with the one or more remaining sections of each of data from the second memory device comprising the second memory type into a contiguous page, and copy the contiguous page to a third memory device comprising a third memory type.

Abstract: Aspects of a storage device including a memory and a controller are provided which simplify controller management of logical and physical meta-dies and meta-blocks by allowing a logical meta-die to be mapped to multiple physical meta-dies. The memory includes first dies grouped in a first physical meta-die and second dies grouped in a second physical meta-die. The physical meta-dies each include physical meta-blocks. The controller maps a logical meta-die to the first physical meta-die and the second physical meta-die. The controller may also map logical meta-blocks of the logical meta-die to the physical meta-blocks. For instance, the controller may associate a first logical metablock of the logical meta-die to the first physical meta-die and a second logical metablock of the logical meta-die to the second physical meta-die. As a result, firmware complexity in managing meta-dies and meta-blocks may be reduced compared to one-to-one logical-to-physical meta-die mapping approaches.

Abstract: Methods, systems, and devices for adaptive user defined health indications are described. A host device may be configured to dynamically indicate adaptive health flags for monitoring health and wear information for a memory device. The host device may indicate, to a memory device, a first index. The first index may correspond to a first level of wear of a set of multiple indexed levels of wear for the memory device. The memory device may determine that a metric of the memory device satisfies the first level of wear and indicate, to the host device, that the first level of wear is satisfied. The host device may receive the indication that the first level of wear is satisfied and indicate, to the memory device, a second level of wear of the set of indexed levels of wear that is different than the first level of wear.

Abstract: According to the embodiments, an external storage device switches to an interface controller for supporting only a read operation of nonvolatile memory when a shift condition for shifting to a read only mode is met. A host device switches to an interface driver for supporting only the read operation of the nonvolatile memory when determining to recognize as read only memory based on information acquired from the external storage device.

Abstract: Systems, apparatuses, and methods for implementing a multi-tiered approach to cache compression are disclosed. A cache includes a cache controller, light compressor, and heavy compressor. The decision on which compressor to use for compressing cache lines is made based on certain resource availability such as cache capacity or memory bandwidth. This allows the cache to opportunistically use complex algorithms for compression while limiting the adverse effects of high decompression latency on system performance. To address the above issue, the proposed design takes advantage of the heavy compressors for effectively reducing memory bandwidth in high bandwidth memory (HBM) interfaces as long as they do not sacrifice system performance. Accordingly, the cache combines light and heavy compressors with a decision-making unit to achieve reduced off-chip memory traffic without sacrificing system performance.

Abstract: A semiconductor memory device includes a memory cell array, a sense amplifier circuit and a random code generator. The memory cell array is divided into a plurality of sub array blocks arranged in a first direction and a second direction crossing the first direction. The sense amplifier circuit is arranged in the second direction with respect to the memory cell array, and includes a plurality of input/output (I/O) sense amplifiers. The random code generator generates a random code which is randomly determined based on a power stabilizing signal and an anti-fuse flag signal. A second group of I/O sense amplifiers selected from among a first group of I/O sense amplifiers performs a data I/O operation by data scrambling data bits of main data. The first group of I/O sense amplifiers correspond to a first group of sub array blocks accessed by an access address.

Abstract: A storage device includes a nonvolatile memory, a volatile memory, and a controller accesses the nonvolatile memory using an address conversion table including regions, each region including entries, each entry storing a physical address of the nonvolatile memory in association with a logical address, and reads and writes data of the address conversion table from and to the nonvolatile memory and the volatile memory in a unit of a frame. The controller writes, to the nonvolatile memory, data of a first region in a first format in which a head address of data of a region aligns with a head address of a frame, and writes, to the volatile memory, data of a second region in either the first format or a second format in which a head address of data of a region does not align with a head address of a frame.

Abstract: An operation method of a controller, comprising: selecting a target super block, on which garbage collection (GC) is to be performed, among a plurality of super blocks which are completely programmed, based on a first valid page count of each of the super blocks when a determination to perform GC is made; selecting a first target block among a plurality of memory blocks in the target super block based on a second valid-page decrease amount of each of the memory blocks; and performing a first copy operation on valid pages in the first target block.

Abstract: The present disclosure generally relates to methods of operating storage devices. The storage device comprises a controller comprising first random access memory (RAM1), second random access memory (RAM2), and a storage unit divided into a plurality of zones. By restricting the host to have a minimum write size, the data transfer speed to RAM2, RAM1, and the storage unit can be optimized. A temporary buffer is utilized within the RAM1 to update parity data for the corresponding commands. The parity data is updated in the RAM1 and written to the RAM2 in the corresponding zone. The parity data may be copied from the RAM2 to the RAM1 to update the parity data in the temporary buffer when commands are received to write data to corresponding zones. As the parity data is updated, the corresponding command is simultaneously written to the corresponding zone.

Abstract: The memory system comprises nonvolatile memory devices each including plural superblocks and a controller. The controller is configured to select a victim superblock including a smaller number of valid pages than any among remaining superblocks, exchange a greater-valid-pages block with a smaller-valid-pages block, and control the memory device to perform a garbage collection operation on the victim superblock, wherein the greater-valid-pages block is included in the victim superblock and the smaller-valid-pages block is included in one among the remaining superblocks, and wherein the smaller-valid-pages block has a smaller number of valid pages than the greater-valid-pages block.

Abstract: The present application describes embodiments of an interface for coupling flash memory and dynamic random access memory (DRAM) in a processing system. Some embodiments include a dedicated interface between a flash memory and DRAM. The dedicated interface is to provide access to the flash memory in response to instructions received over a DRAM interface between the DRAM and a processing device. Some embodiments of a method include accessing a flash memory via a dedicated interface between the flash memory and a dynamic random access memory (DRAM) in response to an instruction received over a DRAM interface between the DRAM and a processing device.

Abstract: The method includes setting conductances for corresponding non-volatile memory (NVM) devices of a cross-bar array to zero. The method further includes determining a plurality of pulse-widths for the corresponding plurality of NVM devices based on a corresponding plurality of programming errors. Additionally, the method includes programming the NVM devices using the determined pulse-widths. Also, the method includes measuring actual conductances for the corresponding NVM devices. Further, the method includes adjusting scaling factors for the corresponding NVM devices based on the actual conductances and the corresponding programming errors. Additionally, the method includes programming the corresponding NVM devices based on the determined pulse-widths and the scaling factors.

Abstract: A method of operating a controller that controls an operation of a semiconductor memory device including a meta area, a normal area, and a state area, includes sensing a turn-on of a memory system including the controller, checking a last state flag among at least one or more state flags stored in the state area, and determining whether to perform a reclaim operation on meta data stored in the meta area based on the checked state flag.

Abstract: The present disclosure provides methods, systems, and non-transitory computer readable media for optimizing performance of a data storage system. The methods include receiving an I/O request to write a payload of data; selecting one or more secondary storage units from a plurality of secondary storage units coupled to the data storage system, wherein the selection of the one or more secondary storage units is based on an assessment of one or more effects on the garbage collection activity of the plurality of secondary storage units predicted to result from storing the payload of data on the plurality of secondary storage units; and storing the payload of data on the one or more selected secondary storage units.

Abstract: A non-volatile memory module in parallel architecture is described. It includes memory function and data storage function in a single module. It enables host system to use memory bus to access storage devices and to use the same memory command protocol for storage device access. The parallel architecture enables contents in memory devices and storage devices to be exchanged freely on module under the control of host memory controller to boost performance of computer and to retain data even if power to computer is shut off. The configuration of non-volatile memory module can be partitioned or expanded into multiple independent channels on module seamlessly with or without ECC supports.

Abstract: A method includes determining respective memory access counts of a plurality of blocks of non-volatile memory cells that are grouped into a plurality of respective groups, comparing the respective memory access counts to respective memory access thresholds, determining a respective memory access count of a block of non-volatile memory cells exceeds a respective memory access threshold, and performing a media scan operation on the block of non-volatile memory cells.

Abstract: A method includes determining that a ratio of valid data portions of a block of memory cells is greater than or less than a valid data portion threshold and performing a first media management operation on the block of memory cells in response to determining that the ratio of valid data portions is greater than the valid data portion threshold. The method further includes performing a second media management operation on the block of memory cells in response to determining that the ratio of valid data portions is less than the valid data portion threshold.

Abstract: A memory device may support multiple DQ maps. Two or more of the DQ maps may support memory operations using a same input-output width. In some examples, one or more components for supporting a DQ map for a different input-output width may be used to also support one or more of the DQ maps for the same-input output width.

Abstract: A memory system includes a plurality of memory dies and a controller coupled with the plurality of memory dies via a plurality of channels. The controller is configured to perform a correlation operation on at least some read requests among a plurality of read requests inputted from an external device so that the plurality of memory dies outputs plural pieces of data corresponding to the plurality of read requests via the plurality of channels in an interleaving way. The controller is configured to determine when to perform the correlation operation based on the number of the plurality of read requests.

Abstract: Described embodiments include memory systems that may shadow certain data stored in a first memory device (e.g. NAND flash device) onto a second memory device (e.g. DRAM device). Memory systems may train and/or re-organize stored data to facilitate the selection of data to be shadowed. Initial responses to memory commands may be serviced from the first memory device, which may have a lower latency than the second memory device. The remaining data may be serviced from the second memory device. A controller may begin to access the remaining data while the initial response is being provided from the first memory device, which may reduce the apparent latency associated with the second memory device.

Abstract: This disclosure provides for improvements in managing multi-drive, multi-die or multi-plane NAND flash memory. In one embodiment, the host directly assigns physical addresses and performs logical-to-physical address translation in a manner that reduces or eliminates the need for a memory controller to handle these functions, and initiates functions such as wear leveling in a manner that avoids competition with host data accesses. A memory controller optionally educates the host on array composition, capabilities and addressing restrictions. Host software can therefore interleave write and read requests across dies in a manner unencumbered by memory controller address translation. For multi-plane designs, the host writes related data in a manner consistent with multi-plane device addressing limitations. The host is therefore able to “plan ahead” in a manner supporting host issuance of true multi-plane read commands.

Abstract: This disclosure provides for improvements in managing multi-drive, multi-die or multi-plane NAND flash memory. In one embodiment, the host directly assigns physical addresses and performs logical-to-physical address translation in a manner that reduces or eliminates the need for a memory controller to handle these functions, and initiates functions such as wear leveling in a manner that avoids competition with host data accesses. A memory controller optionally educates the host on array composition, capabilities and addressing restrictions. Host software can therefore interleave write and read requests across dies in a manner unencumbered by memory controller address translation. For multi-plane designs, the host writes related data in a manner consistent with multi-plane device addressing limitations. The host is therefore able to “plan ahead” in a manner supporting host issuance of true multi-plane read commands.

Abstract: Rapid writing to and reading from even very large amounts of data, especially where the data evolves more slowly over time. For each of a sequence of commits of the data, the data is represented by identifying pages of the data that have changed since a prior commit in the sequence of commits. A sparce file is formulate for the commit, and contains each of identified pages, and for each identified page a mapping of the identified to a page address of the identified page in the address range. The sparce file is then stored as associated with the corresponding commit. Thus, an ordered sequence of sparce files can be created and layered on top of a base file that represents the entire page address range. The sparce files may be quite small as there may be relatively few pages (or perhaps even no pages) that changed since the prior commit in the sequence of commits. Reads occur by creating a sparce in-memory object, and checking for each page at each sparce.

Abstract: A storage system has a pool of reserved memory blocks that can be used either as control blocks or as overprovision blocks. A controller in the storage system can dynamically allocate one or more blocks reserved for control blocks as extra overprovision blocks. If the storage system is running low on control blocks, the controller can allocate the extra blocks from overprovision pool back as control blocks.

Abstract: Disclosed herein are techniques for management of a non-volatile memory device. In one example, an integrated circuit comprises a cache device and a management controller. The cache device is configured to store a first mapping between logical addresses and physical addresses of a first memory, the first mapping being a subset of mapping between logical addresses and physical addresses of the first memory stored in a second memory, and an access count associated with each of the physical addresses of the first mapping. The management controller is configured to: maintain access statistics of the first memory based on the access counts stored in the cache device; and determine the mapping between logical addresses and physical addresses stored in the second memory based on the access statistics and predicted likelihoods of at least some of the logical addresses receiving an access operation.

Abstract: A FTL table processing method for a solid state drive is provided. When the control circuit intends to perform the backup action on a FTL table, the control circuit calculates the size of a remaining space of a used block. Then, the control circuit judges whether the complete content of the FTL table is required to be backed up to the blank block. If the size of the remaining space of the used block is enough, the control circuit backs up the amended contents of the FTL table and a content changed table to the remaining space of the used block. Whereas, if the size of the remaining space of the used block is not enough, the control circuit backs up the complete content of the FTL table to a plurality of blank blocks.

Abstract: An operation method of a storage device configured to communicate with an external device through an interface channel includes receiving an indicator of a first throttling level of a plurality of throttling levels from the external device, setting a first operation parameter based on a throttling predefined table (PDT) including a relationship between the plurality of throttling levels and a plurality of throttling performances, such that the interface channel has a first throttling performance from among the plurality of throttling performances, the first throttling performance corresponding to the first throttling level, receiving a first input/output (I/O) request from the external device through the interface channel having the first throttling performance caused by the setting of the first operation parameter, and processing a first operation corresponding to the first I/O request through the interface channel having the first throttling performance.

Abstract: Provided herein may be a data storage device and a method of operating the same. The data storage device having improved response speed may include a buffer memory configured to hold data, a memory device including a user area reserved for storing user data from a host and configured to be accessed by a first procedure, and a boot partition area reserved for storing boot partition data and configured to be accessed by a second procedure different from the first procedure and a memory controller coupled to and in communications with the buffer memory and memory device and configured to, upon receipt of power from a power supply, control the buffer memory and the memory device to perform a preloading operation by storing, in the buffer memory, part of boot partition data from the boot partition area before a request from the host is received.

Abstract: A temperature reading from a thermal sensor connected to a memory device is determined. The memory device comprises a plurality of memory cells. At least one of a logical capacity criterion or a physical capacity criterion is determined based on the temperature reading from the thermal sensor. Responsive to determining that at least one of the logical capacity of a first data block of the plurality of memory cells configured as a first memory type satisfies the logical capacity criterion or a physical capacity of the first data block of the plurality of memory cells configured as the first memory type satisfies the physical capacity criterion, data from the first data block is migrated to a second data block of the plurality of memory cells configured as a second memory type.

Abstract: The present application provides a method and a device for controlling a storage format of an on-chip storage resource, the method for controlling the storage format of the on-chip storage resource includes: while mapping a neural network model to a many-core system, generating an on-chip storage resource of each processing core in the many-core system, and storing the on-chip storage resource into a specified file; and parsing out a storage format of the on-chip storage resource based on the specified file, obtaining occupied storage space of each processing core, and adjusting the storage format of the on-chip storage resource of each processing core based on the occupied storage space of each processing core.

Abstract: A processing device in a memory system receives a request to erase a data block of a memory device, determines a number of program/erase cycles performed on the data block, and performs an erase operation to erase the data block. The processing device further determines that the number of program/erase cycles performed on the data block satisfies a scan threshold condition and performs a first threshold voltage integrity scan on the data block to determine a first error rate associated with a current threshold voltage of at least one select gate device of the data block. Responsive to the first error rate associated with the current threshold voltage of the at least one select gate device satisfying an error threshold criterion, the processing device performs a touch up operation on the at least one select gate device to adjust the current threshold voltage to the target threshold voltage.

Abstract: Provided herein is a memory controller and a method of operating the same. A memory controller for controlling a memory device including a plurality of memory blocks may include a workload determiner and a write controller. The workload determiner is configured to set a threshold number of free blocks for determining whether a number of free blocks, among the plurality of memory blocks, falls within a normal range based on a predicted idle period of the memory device, and to determine a workload pattern of the memory device by comparing the number of free blocks with the threshold number of free blocks. The write controller is configured to control the memory device so that one of a fast write operation and a normal write operation is selectively performed depending on the workload pattern.

Abstract: In the context of data storage, an approach to pre-fetching data prior to a read request involves receiving a read request and a next read request, and updating metadata corresponding to the read request with a next data storage address corresponding to the next read request. Responsive to again receiving the read request at a later time, the next data storage address can be read from the read request metadata and the next data can be pre-fetched from the next data storage address in advance of processing a following read request. Furthermore, the next data can be pre-fetched during read queue idle time and stored in a cache buffer, in anticipation of another incoming next read request, responsive to which the next data can be returned to the host from the buffer rather than from a read of non-volatile memory.

Abstract: A storage system has a memory with primary and secondary blocks. Data is stored redundantly in the primary and secondary memory blocks but in a different programming order. For example, data is programmed in the first memory block starting at a first wordline and ending at a last wordline, while data is programmed in the second memory block starting at the last wordline and ending at the first wordline.

Abstract: A buffer chip includes a first set of input/output (I/O) pins a second set of I/O pins, and is configurable to operate in one of a first mode or a second mode. The first set of I/O pins and the second set of I/O pins are configured to convey first signals between the buffer chip and one or more volatile memory devices on a memory module when the buffer chip is configured to operate in the first mode. The first set of I/O pins is configured to convey the first signals between the buffer chip and the one or more volatile memory devices and the second set of I/O pins is configured to convey second signals between more non-volatile memory devices on the memory module when the buffer chip is configured to operate in the second mode.

Abstract: Examples described herein relate to a system including a first management system having a primary memory including a free memory, a used memory, and a loosely reserved memory, where the loosely reserved memory comprises cache memory having a reclaimable memory; and a processing resource coupled to the primary memory. The processing resource may monitor an amount of the used memory and an amount of an available memory during runtime of the first management system. Further, the processing resource may enable a synchronized reboot of the first management system if the amount of the used memory is greater than a memory exhaustion first threshold or the amount of the available memory is less than a memory exhaustion second threshold, wherein the memory exhaustion first threshold and the memory exhaustion second threshold are determined based on usage of the reclaimable memory and a number of major page faults.

Abstract: A memory device includes: a first substrate; a peripheral circuit provided on the first substrate; a first metal bonding layer provided on the peripheral circuit; a second metal bonding layer directly bonded to the first metal bonding layer; a memory cell array provided on the second metal bonding layer; and a second substrate provided on the memory cell array. A page buffer circuit in the peripheral circuit receives a verification result through the metal bonding layers, divides the verification result into stages, and sequentially outputs the verification result for the division into the stages, and a pass/failure checker in the peripheral circuit sequentially performs a counting operation about each of the stages to generate accumulated values, and compares the accumulated values and a reference value which increases from an initial value as the counting operation is performed, and the initial value is set by an external memory controller.

Abstract: An apparatus to facilitate data resiliency in a computer system platform is disclosed. The apparatus comprises a non-volatile memory to store data resiliency logic and one or more processors to execute the data resiliency logic to collect boot critical data from a plurality of platform components and store the data within the non-volatile memory.

Abstract: Embodiments of the disclosed technology relate to a memory system and an operating method thereof. According to the embodiments of the disclosed technology, the memory system may check N flag sets corresponding to N cache lines configured to cache map data,—Each flag set includes M flags, each flag indicating whether or not a cache hit for indicating a particular piece of data being stored in the map cache has been made for each of the M data units included in a corresponding cache line—may check target map data based on a number of flags indicating the cache hit for a corresponding data unit and included in the first flag set corresponding to the first cache line among the N cache lines.

Abstract: A storage system and related method are for operating solid-state storage memory in a storage system. Zones of solid-state storage memory are provided. Each zone includes a portion of the solid-state storage memory. The zone has a data write requirement for the zone for reliability of data reads. The storage system adjusts power loss protection for at least one zone. The adjusting is based on the data write requirement for the zone and responsive to detecting a power loss.

Abstract: Devices and techniques for data removal marking in a memory device are described herein. A delete command can be received at the memory device. A count of data portions in the delete command can be compared to determine whether the count is below a threshold. In response to determining that the count of data portions is below the threshold, the data portions can be written to a buffer. When a buffer full event is detected, a segment of an L2P data structure can be loaded into working memory of the memory device. Then, each record in the segment of the L2P data structure that has a corresponding entry in the buffer can be updated to mark the data as removable (e.g., invalid).

Abstract: Systems, methods, and apparatus including computer-readable mediums for determining read voltages for memory systems with machine learning (ML) are provided. In one aspect, a memory system includes a memory and a memory controller configured to: obtain a first reading output of memory data using a first read voltage corresponding to a first set of parameters associated with the memory data; if the first reading output fails to pass an Error Correction Code (ECC) test, obtain a second reading output of the memory data using a second read voltage corresponding to a second set of parameters associated with the memory data and including the first set of parameters, the second read voltage being generated using at least one ML algorithm based on the second set of parameters; and if the second reading output passes the ECC test, output the second reading output as a target reading output of the memory data.

Abstract: A method of operating a Solid State Drive (SSD), comprising identifying critical metadata corresponding to data previously written to the SSD. In response to a power loss event the method also includes storing the critical metadata in a non-volatile memory. Further, the method also involves writing a first table of contents corresponding to the stored critical metadata to the non-volatile memory and storing a pointer to the first table of contents. A Solid State Drive (SSD) including a memory controller, a non-volatile memory, and a power loss protection capacitor. The memory controller is configured to identify critical metadata corresponding to data previously written to the SSD. The memory controller is also configured to, in response to a power loss event, store the critical metadata in a non-volatile memory write a first table of contents corresponding to the stored critical metadata to the non-volatile memory, and store a pointer to the first table of contents.

Abstract: Qubit reservation is disclosed. A first request to reserve at least one qubit is received from a requestor. The first request includes an application identifier (ID) of a first quantum application. Qubit metadata that describes characteristics of a first plurality of qubits implemented by a first quantum computing system is accessed to identify a first qubit that is available to be reserved. The qubit metadata is modified to reserve the first qubit to thereby inhibit access to the first qubit by any quantum application other than the first quantum application.

Abstract: A circuit board incorporable into an apparatus includes a substrate, a reception unit that is provided on the substrate and that wirelessly receives a function program for achieving a function, a storage unit that is provided on the substrate and to which a writing program for writing the function program received by the reception unit has been written in advance, a power supply provided on the substrate, and a power control unit that supplies power for receiving, with the reception unit, the function program and power for writing, on a basis of the writing program, the function program to the storage unit using the power supply without using an external power supply.