Abstract: A method may be performed at a data storage device that includes a memory and a controller. The method includes providing user data to a variable-bit error correction coding (ECC) encoder. The ECC encoder generates a first set of parity bits. A first number of parity bits in the first set of parity bits is determined based on stored counts of read errors. The method also includes storing the user data and the first set of parity bits to a memory of the data storage device.

Abstract: Disclosed herein is a nonvolatile memory including: a nonvolatile memory cell device including at least a nonvolatile memory cell array accessible in units of a word and further accessible at least with a fixed latency in a first access mode and with a variable latency in a second access mode; a first access path used in the first access mode; a second access path used in the second access mode; a first ECC processing part configured to be connected to the first access path and to perform error detection and correction using an ECC on the data output from the nonvolatile memory cell array in the first access mode; and a second ECC processing part configured to be connected to the second access path and to perform error detection and correction using the ECC on the data output from the nonvolatile memory cell array in the second access mode.

Abstract: A data storage system configured to perform prioritized memory scanning for memory errors is disclosed. In one embodiment, the data storage system prioritizes scanning for memory errors based on a quality attribute of pages or zones of a non-volatile memory array. Pages or zones having quality attributes that reflect a lower level of reliability or endurance than other pages or zones are scanned more frequently for memory errors. When memory errors are discovered, the quality attribute of pages or zones can be adjusted to reflect a lower level of reliability or endurance. In addition, stored data can be recovered before it may become permanently lost and before a host system reads the stored data. Improved performance of the data storage system is thereby attained.

Abstract: An apparatus and method are described for detecting and correcting instruction fetch errors within a processor core. For example, in one embodiment, an instruction processing apparatus for detecting and recovering from instruction fetch errors comprises, the instruction processing apparatus performing the operations of: detecting an error associated with an instruction in response to an instruction fetch operation; and determining if the instruction is from a speculative access, wherein if the instruction is not from a speculative access, then responsively performing one or more operations to ensure that the error does not corrupt an architectural state of the processor core.

Abstract: A method for updating content data for user devices begins where a processing module encodes updated content to produce sets of encoded updated content data slices. The method continues with the processing module storing the sets of encoded updated content data slices in storage units and updating an entry in a directory. The method continues with the processing module receiving, from a user device, a read request for the content data and accessing the updated entry. The method continues with the user device receiving a decode threshold number of encoded data slices for each set of encoded updated content data slices and encoded unaltered content data slices. The method continues with the user device decoding each decode threshold number of encoded data slices and the encoded unaltered content data slices to recover the updated content data.

Abstract: A memory system (10) is disclosed, which comprises a flash-EEPROM nonvolatile memory (11) having a plurality of memory cells that have floating gates and in which data items are electrically erasable and writable, a cache memory (13) that temporarily stores data of the flash-EEPROM nonvolatile memory (11), a control circuit (12, 14) that controls the flash-EEPROM nonvolatile memory (11) and the cache memory (13), and an interface circuit (16) that communicates with a host, in which the control circuit functions to read data from a desired target area to-be-determined of the flash-EEPROM nonvolatile memory and detect an erased area to determine a written area/unwritten area by using as a determination condition whether or not a count number of data “0” of the read data has reached a preset criterion count number.

Abstract: A method of operating a memory controller is provided. The method includes determining a data state based on an input stream including multiple alphabet letters, converting a part of the input stream, which corresponds to a conversion size, into alphabet letters in a lower numeral system when the data state is determined to be a first state among multiple predetermined data states, inserting one of the converted alphabet letters into the input stream, and outputting each of the alphabet letters in the input stream as is when the data state is determined to be a second state among the predetermined data states.

Abstract: An access control apparatus for controlling an access to a storage device, the access control apparatus includes a measuring unit configured to measure the time to erase data stored in the storage device, and a determination unit configured to determine a data size of an error correcting code added to data stored in the storage device in accordance with the time measured by the measuring unit. The access control apparatus includes a generation unit configured to generate the error correcting code having the data size determined by the determination unit, and an access controller configured to write the data and the error correcting code generated by the generation unit into the storage device.

Abstract: The device for testing a memory of an electric tool has a control unit, a testing module, a buffer memory and an address translator. The control unit is coupled to the memory and configured to control the electric tool. The testing module is coupled to the memory and configured to test a specific memory cell from among a plurality of memory cells of the memory. The buffer memory is configured to provide temporary storage of the data that is stored in the specific memory cell during the testing of the specific memory cell. The address translator is configured to translate the address of the specific memory cell to the address of the buffer memory during the testing of the specific memory cell. A tool and method are also provided.

Abstract: A system for detecting an address or data error in a memory system. During operation, the system stores a data block to an address by: calculating a hash of the address; using the calculated hash and data bits from the data block to compute ECC check bits; and storing the data block containing the data bits and the ECC check bits at the address. During a subsequent retrieval operation, the memory system uses the address to retrieve the data block containing the data bits and ECC check bits. Next, the system calculates a hash of the address and uses the calculated hash and the data bits to compute ECC check bits. Finally, the system compares the computed ECC check bits with the retrieved ECC check bits to determine whether an error exists in the address or data bits, or if a data corruption indicator is set.

Abstract: A memory system includes a nonvolatile memory device and a memory controller configured to control the nonvolatile memory device and configured to provide the nonvolatile memory device with error flag information including error location information of an error of data read from the nonvolatile memory device.

Abstract: A method for data storage includes initially storing a sequence of data pages in a memory that includes multiple memory arrays, such that successive data pages in the sequence are stored in alternation in a first number of the memory arrays. The initially-stored data pages are rearranged in the memory so as to store the successive data pages in the sequence in a second number of the memory arrays, which is less than the first number. The rearranged data pages are read from the second number of the memory arrays.

Abstract: A storage drive includes a non-volatile semiconductor memory, and interface, a compression module, a sector module, and a control module. The interface is configured to receive first data sectors transmitted from a host to the storage drive. The compression module is configured to compress the first data sectors to generate second data sectors. Lengths of the second data sectors vary. The first sector module is configured to generate third data sectors by adding nuisance data to (i) the second data sectors, or (ii) an encrypted version of the second data sectors, wherein lengths of the third data sectors do not vary. The control module is configured to store the third data sectors in the non-volatile semiconductor memory.

Abstract: A system for interfacing with a co-processor or input/output device is disclosed. According to one embodiment, the system includes a computer processing unit, a memory module, a memory bus that connects the computer processing unit and the memory module, and a co-processing unit or input/output device, wherein the memory bus also connects the co-processing unit or input/output device to the computer processing unit.

Abstract: A controller of a storage control apparatus creates a fixed value, which is one or higher values conforming to a prescribed data pattern, with respect to first data, which is smaller than the size of a storage area of a storage device, creates a guarantee code related to a data area comprising the first data and the fixed value, and writes the data group comprising the data area and the guarantee code to the storage area. The controller reads a data group from the storage area, and determines whether or not more errors than the number of errors correctable by the guarantee code are included in this data group. In a case where the result of this determination is affirmative, the controller determines whether or not an error exists in the fixed value inside the data group.

Abstract: The disclosed embodiments relate to a Flash-based memory module having high-speed serial communication. The Flash-based memory module comprises, among other things, a plurality of I/O modules, each configured to communicate with an external device over one or more external communication links, a plurality of Flash-based memory cards, each comprising a plurality of Flash memory devices, and a plurality of crossbar switching elements, each being connected to a respective one of the Flash-based memory cards and configured to allow each one of the I/O modules to communicate with the respective one of the Flash-based memory cards. Each I/O module is connected to each crossbar switching element by a high-speed serial communication link, and each crossbar switching element is connected to the respective one of the Flash-based memory cards by a plurality of parallel communication links.

Abstract: A memory system includes a memory and a content addressable memory (CAM). The memory includes a plurality of address locations, wherein each address location configured to store data and one or more error correction bits corresponding to the data. The CAM includes a plurality of entries, wherein each entry configured to store an address value of an address location of the memory and one or more extended error correction bits corresponding to the data stored at the address location of the memory.

Abstract: Channel marking is provided in a memory system that includes a first memory channel, a second memory channel, and error correction code (ECC) logic. The memory system is configured to perform a method that includes receiving a request to apply a first channel mark to the first memory channel and determining a priority level of the first channel mark. A request is received to apply a second channel mark to the second memory channel, and a priority level of the second mark is determined. It is determined that the priority level of the first channel mark is higher than the priority level of the second channel mark. The first channel mark is supplied to the ECC logic while blocking the second channel mark from the ECC logic.

Abstract: An apparatus generally having a plurality of first circuits and a second circuit is disclosed. The first circuits may be configured to (i) generate a plurality of intermediate bits by dividing a plurality data bits by a plurality of minimal polynomials of an encoding along a first path and (ii) generate a plurality of parity bits by multiplying the intermediate bits by the minimal polynomials along a second path. A number of the parity bits may be variable based on a configuration signal. The second circuit may be configured to (i) delay the data bits and (ii) generate a plurality of code bits by appending the parity bits to a last of the data bits.

Abstract: A system and method for performing cryptographic functions in hardware using read-N keys comprising a cryptographic core, seed register, physically unclonable function (PUF), an error-correction core, a decryption register, and an encryption register. The PUF configured to receive a seed value as an input to generate a key as an output. The error-correction core configured to transmit the key to the cryptographic core. The encryption register and decryption register configured to receive the seed value and the output. The system, a PUF ROK, configured to generate keys that are used N times to perform cryptographic functions.

Abstract: Systems and methods for adaptively operating a storage device are provided. A level of integrity of storing data in the storage device is determined. A coding scheme is selected based on the determined level of integrity of the storage device. An operation is performed on the storage device using the selected coding scheme.

Abstract: A method for data storage includes storing data in a memory that includes one or more memory units, each memory unit including memory blocks. The stored data is compacted by copying at least a portion of the data from a first memory block to a second memory block, and subsequently erasing the first memory block. Upon detecting a failure in the second memory block after copying the portion of the data and before erasure of the first memory block, the portion of the data is recovered by reading the portion from the first memory block.

Abstract: A method for operating a memory (28) includes storing data in a group of analog memory cells (32) of the memory as respective first voltage levels. After storing the data, second voltage levels are read from the respective analog memory cells. The second voltage levels are affected by cross-coupling interference causing the second voltage levels to differ from the respective first voltage levels. Cross-coupling coefficients, which quantify the cross-coupling interference among the analog memory cells, are estimated by processing the second voltage levels. The data stored in the group of analog memory cells is reconstructed from the read second voltage levels using the estimated cross-coupling coefficients.

Abstract: Embodiments of the present disclosure describe methods, apparatus, and system configurations for providing rank-specific cyclic redundancy checks in memory systems.

Abstract: A method and apparatus for detecting a free page of a memory device, and a method and apparatus for decoding an error correction code by using the method and apparatus for detecting a free page are provided. Free page data read from the memory is converted into a converted codeword for inclusion as an element of an error correction code field. The converted codeword is compared to an initially set target codeword to detect an amount of non-identical bits. A page read from the memory is determined to be a free page when the amount of non-identical bits is equal to or less than an initially set threshold value.

Abstract: A system comprising a memory subsystem having at least one memory device, and a memory controller to control access of the memory subsystem, wherein the memory controller is configured to store data with error correction code (ECC) information in a first portion of the memory subsystem, and to store data without ECC information in a second portion of the memory subsystem.

Abstract: A co-hosted cyclical redundancy check (CRC) calculations system is arranged to use a processor to generate initial addresses for reading the data from a mirrored device that has address ranges over which a CRC result is to be calculated. An memory mapping unit detects when the initial address falls within an address range over which the CRC result is to be calculated. A read snoop unit snoops the data read from a mirrored memory that has data stored using a mirrored address. A CRC co-generator receives the snooped data read from mirrored memory and uses the snooped data read from the mirrored memory to calculate the CRC result.

Abstract: Methods and apparatuses for enhanced protection of data stored in a non-volatile memory system involve a controller capable of adapting to the failure of one or more non-volatile memory devices in the memory system. The controller stores data in the form of page stripes, each page stripe composed of data pages, and each data page stored in a different non-volatile memory device. The controller also detects failure of a non-volatile memory device in which a data page of a particular page stripe is stored, reconstructs the data page, and stores the reconstructed data page in a new page stripe, where the number of data pages in the new page stripe is less than the number of data pages in the particular page stripe, and where no page of the new page stripe is stored in a memory location within the failed non-volatile memory device.

Abstract: According to one embodiment, a data storage device includes a read module, an ECC module, and a controller. The read module is configured to read data to be accessed and designation data designating the data, from nonvolatile memories. The ECC module is configured to perform an error check and correction process on the data and designation data read by the read module. The controller is configured to correct the designation data if the ECC module cannot correct the designation data and to perform an error detection process based on the designation data corrected.

Abstract: The embodiments include an error correction processing unit and an error correction history recording unit. The error correction processing unit performs an error correction process based on data read from a non-volatile semiconductor memory and a second-step error correction code corresponding to the data. The error correction history recording unit records error correction history indicating whether first error correction is successful through the first error correction process, in association with unit data. When error correction history of target unit data to be read indicates that correction is not successful, the second error correction process is executed without executing the first error correction process.

Abstract: Systems and methods are provided for storing data in a portion of a non-volatile memory (“NVM”) such that the status of the NVM portion can be determined with high probability on a subsequent read. An NVM interface, which may receive write commands to store user data in the NVM, can store a fixed predetermined sequence (“FPS”) with the user data. The FPS may ensure that a successful read operation on a NVM portion is not misinterpreted as a failed read operation or as an erased NVM portion. For example, if the NVM returns an all-zero vector when a read request fails, the FPS can include at least one “1” or one “0”, as appropriate, to differentiate between successful and unsuccessful read operations. In some embodiments, the FPS may also be used to differentiate between disturbed data, which passes an error correction check, and correct data.

Abstract: Adaptive ECC techniques for use with flash memory enable improvements in flash memory lifetime, reliability, performance, and/or storage capacity. The techniques include a set of ECC schemes with various code rates and/or various code lengths (providing different error correcting capabilities), and error statistic collecting/tracking (such as via a dedicated hardware logic block). The techniques further include encoding/decoding in accordance with one or more of the ECC schemes, and dynamically switching encoding/decoding amongst one or more of the ECC schemes based at least in part on information from the error statistic collecting/tracking (such as via a hardware logic adaptive codec receiving inputs from the dedicated error statistic collecting/tracking hardware logic block). The techniques further include selectively operating a portion (e.g., page, block) of the flash memory in various operating modes (e.g. as an MLC page or an SLC page) over time.

Abstract: By using a processor to share certain burdens originally handled by a controller of a non-volatile memory module, the controller is able to process more complicated procedures. The procedures include an error correction code generating procedure, a data scrambling procedure, a data recovery procedure, an address translation procedure configured to translate a logical address into a physical address, and a wear leveling procedure.

Abstract: An error detection and correction apparatus includes a code word read-out unit to execute read processing to read out a code word including a plurality of code elements by detection of an erasure position as read data from a memory address and to execute re-read processing to read out the code word as re-read data from the memory address after a predetermined time is elapsed from the time to read out the read data; a timing control erasure position detection unit to detect a position of the code element having a value not matched as the erasure position in the code word by determining whether or not the value is matched per the code word in the read data and the re-read data; and an error correction unit to correct an error based on the erasure position in the code word where the erasure position is detected.

Abstract: Memory devices that, in a particular embodiment, receive and transmit analog data signals representative of bit patterns of two or more bits such as to facilitate increases in data transfer rates relative to devices communicating data signals indicative of individual bits. Programming error correction code (ECC) and metadata into such memory devices includes storing the ECC and metadata at different bit levels per cell based on an actual error rate of the cells. The ECC and metadata can be stored with the data block at a different bit level than the data block. If the area of memory in which the block of data is stored does not support the desired reliability for the ECC and metadata at a particular bit level, the ECC and metadata can be stored in other areas of the memory array at different bit levels.

Abstract: A storage control apparatus includes a standard read request unit, an error correcting unit, and a high-accuracy read request unit. The standard read request unit is configured to issue a request for a read with standard accuracy to a read address in a memory. The error correcting unit is configured to perform error correction on the basis of an error correcting code and data returned by the memory in response to the read request with the standard accuracy. The high-accuracy read request unit is configured to issue, when an error incapable of being corrected by the error correction is caused, a request again for a read with higher accuracy than the standard accuracy to the read address.

Abstract: Approaches for mitigating single event upsets (SEUs) in a circuit arrangement. In response to each bit error of a plurality of bit errors, an error address indicative of the bit error in a configuration memory cell in the circuit arrangement is translated into a non-volatile memory address. A partial bitstream at the non-volatile memory address is read from a non-volatile memory. Successive partial bitstreams read in response to successive ones of the bit errors are alternately transmitted to first and second internal configuration ports. A subset of configuration memory cells of the circuit arrangement, including the configuration memory cell referenced by the error address, is reconfigured with the partial bitstream.

Abstract: A non-volatile memory device may operate by writing a portion of a new codeword to an address in the device that stores an old codeword, as part of a write operation. An interruption of the write operation can be detected before completion, which indicates that the address stores the portion of the new codeword and a portion of the old codeword. The portion of the old codeword can be combined with the portion of the new codeword to provide an updated codeword. Error correction bits can be generated using the updated codeword and the error correction bits can be written to the address.

Abstract: A semiconductor memory system includes a memory area and an error-correcting (ECC) circuit. The memory area includes a plurality of cells, and the ECC circuit is configured to determine whether uncorrectable error data exists or not by using a parity according to cell data of the memory area in a read mode and a parity according to an encoding result of corrected data of the cell data.

Abstract: A method for data storage includes scrambling data for storage in a memory device using a given scrambling seed. A statistical distribution of the scrambled data is assessed, and a measure of randomness of the statistical distribution is computed. A scrambling configuration of the data is modified responsively to the measure of randomness, and the data having the modified scrambling configuration is stored in the memory device.

Abstract: In one implementation, a memory device includes non-volatile memory, a memory controller communicatively coupled to the non-volatile memory over a first bus, and a host interface through which the memory controller communicates with a host device over a second bus. The memory device can also include a signal conditioner of the host interface adapted to condition signals to adjust a signal level of signals received over the second bus based on signal level data received from the host device, wherein the signal level data relates to a voltage level of signals generated by the host device to encode data transmitted across the second bus.

Abstract: A method is described that includes reading a cache tag and the cache tag's corresponding ECC from storage circuitry of a cache. The method also includes generating an ECC for a search tag. The method also includes calculating a hamming distance between a) the cache tag and its corresponding ECC and b) the search tag and its corresponding ECC. The method also includes determining if the cache tag matches the search tag by comparing the hamming distance against a threshold.

Abstract: A memory system supporting error detection and correction (EDC) coverage. The system includes a memory controller and a memory buffer. The memory buffer includes an interface to a first group of memory devices and an interface to a second group of memory devices. The memory buffer accesses data from the first group of memory devices and accesses first error information corresponding to the data from the second group of devices. The memory buffer also accesses additional data from the second group of memory devices and accesses second error information corresponding to the additional data from a device in the first group of memory devices. EDC coverage may also be configured by the memory controller so that some data accesses have EDC coverage and other data accesses do not have EDC coverage.

Abstract: A method of storing data includes receiving general purpose (GP) data and special Error Tolerant or Streaming (ETS) data, storing the GP data using a data storage method, and storing the ETS data using a different data storage method which affects the access rate, resilience to errors, data integrity, storage density, or storage capacity. The storage medium, which can include a disk drive, flash memory, or holographic memory, is utilized differently depending on the required Quality of Service in aspects including block size, storage of error correction codes, utilization of error correction codes, storage area density, physical format pattern, storage verification, or reaction to failed storage verification. For disk drives these differences include spacing between tracks; overlap between tracks; spiral track formatting; concentric track formatting, and size of blocks, and for flash memories these differences include levels per cell and number of cells.

Abstract: There are described tools and methodologies for building Read Only Memory (ROM) mask software images and the corresponding data/code patching software images. One method is for creating ROM mask content having patch references included therein whereby patch reference errors are detected and corrected. A software patch for a ROM mask with existing patch references may then automatically be created.

Abstract: A memory controller to detect for an unintentional access to an incorrect location of a memory device and to provide error detection for data retrieved from an intended location of the memory device. In an embodiment, the memory controller services a read request, including retrieving data and an error correction code from a memory location. In another embodiment, the retrieved error correction code is evaluated, based on a combination of the retrieved data and an address identifier of the read request, to determine whether the address identifier of the read request corresponds to the memory location from which the data and error correction code were retrieved.

Abstract: An accelerated erasure coding system includes a processing core for executing computer instructions and accessing data from a main memory, and a non-volatile storage medium for storing the computer instructions. The processing core, storage medium, and computer instructions are configured to implement an erasure coding system, which includes: a data matrix for holding original data in the main memory; a check matrix for holding check data in the main memory; an encoding matrix for holding first factors in the main memory, the first factors being for encoding the original data into the check data; and a thread for executing on the processing core. The thread includes: a parallel multiplier for concurrently multiplying multiple entries of the data matrix by a single entry of the encoding matrix; and a first sequencer for ordering operations through the data matrix and the encoding matrix using the parallel multiplier to generate the check data.

Abstract: A multiple access scheme is described. One or more encoders are configured to encode a plurality of bit streams using Low Density Parity Check (LDPC) coding. The bit streams correspond to a respective plurality of terminals. The plurality of bit streams are converted to provide a multiple access scheme for the terminals.

Abstract: According to one embodiment, a storage device includes an error detector, a check module, and a replacement module. The error detector detects a bit error that occurs in entry data related to conversion to a physical address corresponding to a logical address based on an error detecting code assigned to the entry data. The check module checks, based on data obtained by inverting one bit among all bits of the entry data and on data read out from the physical address indicated by the obtained data, whether or not the obtained data is normal entry data. The replacement module replaces the entry data where the bit error is detected with the checked normal entry data.

Abstract: A storage control device for controlling the storage device including a medium for storing data, logical address information, and address translation information and a memory for storing the address translation information read from the medium includes a first receiver for receiving a write request including logical address information, a first sending module for sending a read request including the logical address information of the write request to the storage device, a second receiver for receiving data and logical address information stored in the medium in accordance with the read request from the storage device, and a second sending module for sending an instruction to cause the storage device to write the address translation information stored in the medium into the memory when the logical address information received by the second receiver is different from logical address information included in the write request.