Patents Represented by Attorney Blake T. Biederman
  • Patent number: 7270595
    Abstract: A polishing pad (20) for polishing a wafer (32) or other article, the pad having a groove network (60) configured to increase the residence time polishing medium (46) on the pad. The groove network has a first portion (72) that may extend substantially radially outwardly and an oscillating portion (74) that begins at a transition point (76) and is configured to slow the radially outward flow of the polishing medium.
    Type: Grant
    Filed: May 27, 2004
    Date of Patent: September 18, 2007
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Carolina L. Elmufdi, Ravichandra V. Palaparthi
  • Patent number: 7267610
    Abstract: A chemical mechanical polishing pad (100) having a circular polishing track (124) and a concentric center (116). The polishing pad (100) includes a polishing layer (104) having a groove pattern containing a plurality of grooves (128) each extending through the polishing track (124). The plurality of grooves have an angular pitch that varies in a circumferential direction about the concentric center (116) of the pad (100) and the radial pitch between all adjacent grooves (128) within the wafer track (124) is unequal.
    Type: Grant
    Filed: August 30, 2006
    Date of Patent: September 11, 2007
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Carolina L. Elmufdi, Gregory P. Muldowney
  • Patent number: 7255633
    Abstract: The polishing pad is useful for polishing magnetic, optical and semiconductor substrates. The pad includes a polishing layer having a rotational center and an annular polishing track concentric with the rotational center and has a width. The width of the annular polishing track is free of non-radial grooves. And the pad has a plurality of radial micro-channels in the polishing layer within the width of the annular polishing track with a majority of the radial micro-channels having primarily a radial orientation and an average width less than 50 ?m.
    Type: Grant
    Filed: March 29, 2006
    Date of Patent: August 14, 2007
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventor: Gregory P. Muldowney
  • Patent number: 7253111
    Abstract: The polishing solution is useful for preferentially removing barrier materials in the presence of nonferrous interconnect metals with limited erosion of dielectrics. The polishing solution comprises 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 10 ppb to 4 weight percent complexing agent, 0 to 50 weight percent abrasive and balance water; and the solution having a pH of less than 7.
    Type: Grant
    Filed: April 21, 2004
    Date of Patent: August 7, 2007
    Assignee: Rohm and Haas Electronic Materials CMP Holding, Inc.
    Inventors: Zhendong Liu, John Quanci, Robert E. Schmidt, Terence M. Thomas
  • Patent number: 7241725
    Abstract: The polishing fluid is useful for polishing tantalum-containing barrier materials of a semiconductor substrate. The polishing fluid includes a nitrogen-containing compound having at least two nitrogen atoms comprising imine compounds and hydrazine compounds. The nitrogen-containing compound is free of electron-withdrawing substituents; and the polishing fluid is capable of removing the tantalum-containing barrier materials from a surface of the semiconductor substrate without an abrasive.
    Type: Grant
    Filed: September 25, 2003
    Date of Patent: July 10, 2007
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventor: Jinru Bian
  • Patent number: 7234224
    Abstract: A method is provided for forming grooves in a polishing pad useful for planarizing a substrate in a chemical mechanical planarization process. The method maintains average velocity as a function of bit diameter to enable groove formation using a rotating bit, whereby grooves can be formed at a higher rate while maintaining high groove quality and low defectivity.
    Type: Grant
    Filed: November 3, 2006
    Date of Patent: June 26, 2007
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Steven Naugler, Steven J. Pufka, Jeffrey R. Stack, Weitung Wang
  • Patent number: 7182670
    Abstract: A chemical mechanical polishing pad (200, 300, 400, 500, 600) that includes a translucent windowpane (220, 320, 404, 516, 524, 604) that allows optical measurements to be made using light energy reflected from the surface of a wafer (212, 324, 608) or other object being polished. The windowpane includes a trailing end (350, 416, 632) and a leading end (348, 412, 628) each having a streamlined shape so as to reduce the disturbance to the flow of a polishing medium (216) around the windowpane. The polishing pad may further include grooves (336, 428, 520, 640) that are diverted around the windowpane so as to provide a continuous path for the polishing medium in the region of the windowpane.
    Type: Grant
    Filed: June 23, 2005
    Date of Patent: February 27, 2007
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventor: Gregory P. Muldowney
  • Patent number: 7182798
    Abstract: The polishing composition is suitable for chemical mechanical polishing magnetic, optical, semiconductor or silicon substrates. The polishing composition includes abrasive particles in a liquid media. The abrasive particles have a particle core, the particle core having a hardness and a polymeric shell physisorbed to and encapsulating the particle core. The polymeric shell has a solid structure and a hardness lower than the hardness of the particle core. The abrasive particles have an average particle size of less than or equal to about 2 micrometers dispersed in the liquid media.
    Type: Grant
    Filed: July 29, 2004
    Date of Patent: February 27, 2007
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Richard E. Partch, Nathaniel A. Barney, Hongyu Wang, John Quanci
  • Patent number: 7169030
    Abstract: The polishing pad is suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a polymeric matrix having a top polishing surface; and the top polishing surface has polymeric polishing asperities or forms polymeric polishing asperities upon conditioning with an abrasive. The polymeric polishing asperities extend from the polymeric matrix and represent the portion of the top polishing surface that can contact a substrate during polishing. The polymeric polishing asperities are from a polymeric material having a bulk ultimate tensile strength of at least 6,500 psi (44.8 MPa) and a bulk tear strength of at least 250 lb/in. (4.5×103 g/mm).
    Type: Grant
    Filed: May 25, 2006
    Date of Patent: January 30, 2007
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventor: Mary Jo Kulp
  • Patent number: 7156721
    Abstract: A polishing pad (20) for polishing a wafer (32) or other article, the pad having a groove network (60) configured to vary the residence time across the wafer track of the reaction products formed by the interaction of reactants in the polishing medium (46) with structure on the wafer. The groove network has a first portion (72) that may extend substantially radially outward and a second portion (74) that is configured to vary the speed of the radially outward flow of the polishing medium.
    Type: Grant
    Filed: June 7, 2005
    Date of Patent: January 2, 2007
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventor: Ravichandra V. Palaparthi
  • Patent number: 7132033
    Abstract: A method of forming a layered polishing pad is disclosed. The method includes double-laminating a subpad on opposing sides with respective adhesive layers and bonding a polishing pad top layer to the subpad via the upper adhesive layer. The polishing pad optionally includes a window. Because the subpad is double-laminated, an opening can be formed through both the top and bottom adhesive layers as well as the subpad. Thus, when bonded to a top polishing pad layer having a window, the result is a layered polishing pad with a through optical path that does not include an adhesive layer.
    Type: Grant
    Filed: February 27, 2004
    Date of Patent: November 7, 2006
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Mark J. Boldizar, Robert T. Gamble, Vincent Matthew Hedrick, Jason M. Lawhorn, Alan H. Saikin, Katherine L. Tome
  • Patent number: 7131895
    Abstract: A polishing pad (104) having an annular polishing track (122) and including a plurality of grooves (148) that each traverse the polishing track. Each groove includes a plurality of flow control segments (CS1–CS3) and at least two discontinuities in slope (D1, D2) located within the polishing track.
    Type: Grant
    Filed: May 20, 2005
    Date of Patent: November 7, 2006
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Carolina L. Elmufdi, Jeffrey J. Hendron, Gregory P. Muldowney
  • Patent number: 7132058
    Abstract: A tungsten CMP solution for planarizing semiconductor wafers includes a primary oxidizer having a sufficient oxidation potential for oxidizing tungsten metal to tungsten oxide; and the tungsten CMP solution has a static etch rate for removing the tungsten metal. A secondary oxidizer lowers the static etch rate of the tungsten CMP solution. The secondary oxidizer is selected from the group consisting of bromates and chlorates. Optionally the tungsten CMP contains 0 to 50 weight percent abrasive particles; and it contains a balance of water and incidental impurities.
    Type: Grant
    Filed: January 24, 2003
    Date of Patent: November 7, 2006
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Terence M. Thomas, Stephan De Nardi, Wade Godfrey
  • Patent number: 7125318
    Abstract: A polishing pad (200) that includes a polishing layer (204) having a polishing region (208) for polishing a wafer (220). The polishing layer includes a set of inflow grooves (232) that extend into the polishing region and a set of outflow grooves (236) that extend out of the polishing region. The inflow and outflow grooves cooperate with one another to enhance the utilization of a polishing slurry during polishing of the wafer.
    Type: Grant
    Filed: November 13, 2003
    Date of Patent: October 24, 2006
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventor: Gregory P. Muldowney
  • Patent number: 7108597
    Abstract: A polishing pad (104, 300, 400, 500) for polishing a wafer (112, 516), or other article. The polishing pad includes a polishing layer (108) containing a plurality of grooves ((148, 152, 156)(304, 308, 324)(404, 408, 424)(520, 524, 528)) having orientations largely parallel to one or more corresponding respective velocity vectors (V1–V4)(V1?–V4?)(V1?–V4?) (V1??–V4??) of the wafer. These parallel orientations promote the formation of mixing wakes in a polishing medium (120) within these grooves during polishing.
    Type: Grant
    Filed: September 28, 2005
    Date of Patent: September 19, 2006
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventor: Gregory P. Muldowney
  • Patent number: 7086935
    Abstract: An aqueous composition is useful for chemical mechanical polishing of a patterned semiconductor wafer containing a nonferrous metal. The composition comprises an oxidizer, an inhibitor for the nonferrous metal, 0.001 to 15 weight percent of a water soluble modified cellulose, non-saccaride water soluble polymer, 0 to 15 weight percent phosphorus compound, 0.005 to 10 weight percent of a water miscible organic solvent, and water.
    Type: Grant
    Filed: November 24, 2004
    Date of Patent: August 8, 2006
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventor: Hongyu Wang
  • Patent number: 7084059
    Abstract: A system for dished metal redevelopment by providing a metal deposition solution at an interface between a moving semiconductor wafer and a moving polishing pad, which deposits metal onto dished metal in trenches in a layer of an interlayer dielectric; and by polishing the wafer with a relatively reduced polishing pressure to polish metal being deposited. A polishing fluid is disclosed for use in a CMP polishing system, the polishing fluid being a metal deposition solution for dished metal redevelopment.
    Type: Grant
    Filed: January 21, 2003
    Date of Patent: August 1, 2006
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Terence M. Thomas, Joseph K. So
  • Patent number: 7074115
    Abstract: A polishing pad is useful planarizing semiconductor substrates. The polishing pad comprises a polymeric material having a porosity of at least 0.1 volume percent, a KEL energy loss factor at 40° C. and 1 rad/sec of 385 to 750 1/Pa and a modulus E? at 40° C. and 1 rad/sec of 100 to 400 MPa.
    Type: Grant
    Filed: September 10, 2004
    Date of Patent: July 11, 2006
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: David B. James, Mary Jo Kulp
  • Patent number: 7059950
    Abstract: A polishing pad (104, 304, 404, 504) having an annular polishing track (152, 312, 412, 512) for polishing a wafer (120, 316, 416, 516). A plurality of grooves (112, 320, 420, 520) are arranged within the wafer track so that they are spaced from one another both radially and circumferentially relative to the rotational nature of pad and are at least partially non-circumferential relative to the pad.
    Type: Grant
    Filed: December 14, 2004
    Date of Patent: June 13, 2006
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventor: Gregory P. Muldowney
  • Patent number: 7059949
    Abstract: A polishing pad (104, 300) having an annular polishing track (152, 320) and a plurality of groups (160, 308) of grooves (112, 304) repeated circumferentially about the rotational center (128) of the pad. The plurality of grooves in each group are arranged along a trajectory (164, 312) in an offset and overlapping manner so as to provide a plurality of overlapping steps (172, 316) within the annular polishing track. The groups may be arranged in spaced-apart or nested relation with one another.
    Type: Grant
    Filed: December 14, 2004
    Date of Patent: June 13, 2006
    Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
    Inventors: Carolina L. Elmufdi, Gregory P. Muldowney