Abstract: A polishing composition for polishing a semiconductor wafer includes comprises water, an abrasive that is preferably colloidal silica, water-soluble cellulose having a molecular weight of at least about 1,000,000 and an alkaline compound that is preferably ammonia. Tetra methyl ammonium hydroxide may also be added to the polishing composition.

Abstract: This invention relates to polishing pads and a method for making the polishing pad surface readily machineable thereby facilitating permanent alteration of the polishing pad surface to create an advantageous micro-texture. The advantageous micro-texture is statistically uniform and provides a polishing pad with improved break-in preconditioning time. Polishing pads of this invention find application to the polishing/planarization of substrates such as glass, dielectric/metal composites and substrates containing copper, silicon, silicon dioxide, platinum, and tungsten typically encountered in integrated circuit fabrication.

Abstract: An anti-scattering layer for polishing pad windows as used in chemical-mechanical planarization (CMP) systems is disclosed. The invention finds particular use in circumstances where the windows have a roughened lower surface. The anti-scattering layer is formed over the roughened lower surface of the window in a manner that significantly reduces light scattering while making optical in-situ measurements of a wafer undergoing a CMP process. The reduced light scattering results in an increased signal strength, which makes for more robust optical in-situ measurement capability.

Abstract: According to the invention, an aqueous polishing composition comprises, abrasive particles and water of basic pH to remove a barrier layer by CMP using a polishing pad, the aqueous polishing composition further comprising, solely polar molecules each having multiple, polar bonding sites forming respective hydrogen bonds with silanol bonding groups on a hydrated silica dielectric layer of a semiconductor substrate, which form an hydrophilic protective film of the polar molecules that minimizes erosion.

Abstract: A semiconductor wafer adapted for planarization by polishing the wafer with a polishing pad and a polishing fluid, the wafer having a metal layer, and a resistant film formed selectively on low topography features of the metal layer to resist the polishing fluid while high topography features of the metal layer are removed by said polishing, which minimizes a time duration for attaining planarization of the wafer by said polishing.

Abstract: A statistically uniform micro-texture on a polishing pad surface improves break-in preconditioning time, and is measured by: Land Surface Roughness, Ra, from about 0.01 &mgr;m to about 25 &mgr;m; Average Peak to Valley Roughness, Rtm, from about 2 &mgr;m to about 40 &mgr;m; Core roughness depth, Rk, from about 1 to about 10; Reduced Peak Height, Rpk, from about 0.1 to about 5; Reduced Valley Height, Rvk, from about 0.1 to about 10; and Peak density expressed as a surface area ratio, RSA, ([Surf.Area/(Area−1)]), 0.001 to 2.0.

Abstract: A method for chemical mechanical polishing of semiconductor substrates containing a metal layer requiring removal and metal interconnects utilizing a composition containing engineered copolymer molecules comprising hydrophilic functional groups and relatively less hydrophilic functional groups; the engineered copolymer molecules enabling contact-mediated reactions between the polishing pad surface and the substrate surface during CMP resulting in minimal dishing of the metal interconnects in the substrate.

Abstract: A polishing pad having a soft layer with a porous structure impregnated with a relatively hard material that locally deforms irreversibly under polishing pressure to a substantially flat polishing pad surface.

Abstract: The invention is directed to a base-pad for placement under a polishing pad for use with a polishing fluid during a polishing operation, the base-pad having a layer with vertical elongated pores that absorb polishing fluid and that confine absorbed polishing fluid from transport laterally in the base-pad. Micropores in the layer are impermeable to the polishing fluid and permeable to gasses.

Abstract: A stacked polishing pad includes an upper polishing layer and a lower sub-layer having major faces which are in contact with each other. The polishing layer is substantially impermeable to liquid while the sub-layer is liquid absorbent. The sub-layer has an outer peripheral edge which is sealed to prevent absorption of liquid into the sub-layer through the outer peripheral edge. When the stacked polishing pad is mounted on a platen of a polishing machine, the sub-layer has no exposed surface which can absorb liquid.

Abstract: A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an oxidant, an organic polymer that attenuates removal of the oxide film. The composition may optionally comprise a complexing agent and/or a dispersant.

Abstract: A composition is provided which is useful for the polishing of a semiconductor wafer substrate comprising an organic polymer having a backbone comprised of at least 16 carbon atoms, the polymer having a plurality of moieties with affinity to surface groups on the semiconductor wafer surface. Another composition is provided which is useful for the polishing of a semiconductor wafer substrate comprising a surfactant having a carbon chain backbone comprised of at least 16 carbon atoms.

Abstract: A method of polishing a semiconductor substrate by adjusting the polishing composition with a BTA concentration that raises the metal removal rate when polishing at a relatively high polishing pressure, and that minimizes the metal removal rate when polishing metal in trough at a lower polishing pressure; and adjusting the polishing pressure on metal in each trough to a level that removes metal from trough at a minimized removal rate, while simultaneously polishing the excess metal with a higher polishing pressure.

Abstract: A method of polishing a wafer in a carrier by a polishing pad, controlling a ratio of platen speed to carrier speed (PS to CS) within a specific range, or controlling a first polishing step with a PS to CS ratio in the range of about 150:1 to about 1:150 followed by a second polishing step with a platen speed of about 0 to 20 rpm while maintaining the carrier speed used in the first polishing step, which maximizes clearing of residual material removed from a patterned wafer surface by polishing.

Abstract: A method for polishing a surface of metal on a semiconductor substrate by using a polishing pad and hydrogen peroxide, and removing particles of metal from the semiconductor substrate by polishing, and dissolving the particles in the quantity of hydrogen peroxide.

Abstract: A dry solids composition is provided which may be reconstituted into a chemical-mechanical polishing composition comprising no abrasive particles.

Abstract: This invention is directed to a polishing composition used for the chemical mechanical polishing of semiconductor wafers having a copper metal circuit. The composition has a pH of under 5.0 and comprises the following: (a) a water soluble carboxylic acid polymer comprising polymerized unsaturated carboxylic acid monomers having a number average molecular weight of about 20,000 to 1,500,000 or blends of high and low number average molecular weight polymers of polymerized unsaturated carboxylic acid monomers; (b) 1 to 15% by weight of an oxidizing agent, (c) up to 3.0% by weight of abrasive particles, (d) 50-5,000 ppm (parts per million) of an inhibitor, (e) up to 3.0% by weight of a complexing agent, such as, malic acid, and (f) 0.1 to 5.0% by weight of organic polymer particles, wherein the polymer of the organic polymer particles has a number average molecular weight of at least 500,000 determined by GPC (gel permeation chromatography) and a Tg (glass transition temperature) of at least 25° C.

Abstract: A polishing pad assembly is provided that is useful for the chemical mechanical polishing of glass and electrical devices such as semiconductor wafers that comprises a polish pad and a semi-rigid base material firmly adhered to the polishing pad for positioning on a polishing platen of a polishing machine; wherein the semi-rigid base material has a modulus of rigidity of 0.01-50 GPa (GigaPascals) determined according to ASTM D 790, a thickness of 0.25-15.0 mm, and a grooved surface having a pitch of 5-100 mm and the grooves have a width of 0.025-2.5 mm and a depth of 0.1-2.5 mm.

Abstract: A polishing composition for polishing a semiconductor wafer includes a source of chloride ions in solution, which reduces surface roughness of copper interconnects that are recessed in the wafer. High points on the copper interconnects are polished during a polishing operation, while the chloride ions migrate to electric fields concentrated at the high points. The chloride ions at the high points deter replating of copper ions from solution onto the high points. Instead the copper ions replate elsewhere on the interconnects, which reduces the surface roughness of the interconnects.

Abstract: The system for injecting gas for a detonation projection gun does not incorporate mechanical closing valves or systems for the supply of combustible gas or other inert additive compounds such as nitrogen, argol, helium or the like. On the contrary, the supply of gas or compounds occurs directly and separately to the detonation chamber (1) through a series of independent passages, one for the comburant and at least another passage for the combustibles, each passage being comprised of an expansion chamber (8) and of a plurality of distribution conduits (9) having a reduced cross-section and/or extended length.