Abstract: A power steering apparatus includes a housing defining a chamber. A rack is disposed within the chamber and is moveable along a longitudinal axis. A pinion extends into the chamber for meshing engagement with the rack. A bearing supports the rack relative to the housing and is moveable relative to the housing to re-position the rack relative to the pinion. An adjustment mechanism continuously biases the bearing in response to loosening of the meshing engagement to re-position the rack. A dampener resists the movement of the bearing to slow the re-positioning of the bearing. Preferably, the dampener includes a plastic fluid having a very high viscosity. The plastic fluid is disposed between adjacent moving parts to resist the relative movement between the bearing and the housing.

Abstract: A display device includes gate lines; data lines; charge control lines each including a charge control voltage input pad; first and second thin film transistors (TFTs) each including control and input electrodes connected to the gate and data lines, respectively; a first liquid crystal capacitor connected to an output electrode of the first TFT; a second liquid crystal capacitor connected to an output electrode of the second TFT; a charge control TFT including a control electrode and an input electrode connected to one of the charge control lines and the second pixel electrode, respectively; and a charge-down capacitor connected to an output electrode of the charge control TFT. A duration time of a turn-on voltage pulse applied to the charge control TFT is different from a duration time of a turn-on voltage pulse applied to the first TFT transistor or the second TFT.

Abstract: A method of fabricating an embedded stressor within a semiconductor structure and a semiconductor structure including the embedded stressor includes forming forming a dummy gate stack over a substrate of stressor material, anistropically etching sidewall portions of the substrate subjacent to the dummy gate stack to form the embedded stressor having angled sidewall portions, forming conductive material onto the angled sidewall portions of the embedded stressor, removing the dummy gate stack, planarizing the conductive material, and forming a gate stack on the conductive material.

Abstract: A vertical alignment liquid crystal display includes a first substrate and a second substrate disposed opposite the first substrate. The first substrate includes a first insulation substrate, as well as a first pixel electrode and a second pixel electrode disposed in a same layer with the first pixel electrode on the first insulation substrate. The second substrate includes a second insulation substrate, a first patterned conductive layer disposed on only a portion of the second insulation substrate which is above the first pixel electrode, and a second patterned conductive layer disposed on only a portion of the second insulation substrate which is above the second pixel electrode.

Abstract: An electro-mechanical firearm trigger mechanism for controlling the rate of fire for a firearm in automatic firing mode. The controlling being achieved through the use of a solenoid directed by a computer processor. The computer processor being connected to multiple sensors to instruct the solenoid on a rate of fire or to disengage automatic fire if needed.

Abstract: A multi-gate transistor having a plurality of sidewall contacts and a fabrication method that includes forming a semiconductor fin on a semiconductor substrate and etching a trench within the semiconductor fin, depositing an oxide material within the etched trench, and etching the oxide material to form a dummy oxide layer along exposed walls within the etched trench; and forming a spacer dielectric layer along vertical sidewalls of the dummy oxide layer. The method further includes removing exposed dummy oxide layer in a channel region in the semiconductor fin and beneath the spacer dielectric layer, forming a high-k material liner along sidewalls of the channel region in the semiconductor fin, forming a metal gate stack within the etched trench, and forming a plurality of sidewall contacts within the semiconductor fin along adjacent sidewalls of the dummy oxide layer.

Abstract: Provided is a method for quantifying an initial concentration of a nucleic acid from a real-time nucleic acid amplification data. Nucleic acid (DNA or RNA) extracted from organism or virus is amplified using an enzyme. Then, the initial concentration of the nucleic acid is found by calculating the characteristic amplification cycle number or the characteristic amplification time at which the fluorescence intensity of the nucleic acid subtracted by the background fluorescence intensity of the nucleic acid has half of its maximum value, or the characteristic amplification cycle number or the characteristic amplification time at which the amplification efficiency has the maximum or the minimum value, or the prior-to-amplification fluorescence intensity of the nucleic acid subtracted by the background fluorescence intensity of the nucleic acid. Accordingly, the initial concentration of the nucleic acid can be calculated without differentiation or integration.

Abstract: A CMOS chip comprising a high performance device region and a high density device region includes a plurality of high performance devices comprising n-type field effect transistors (NFETs) and p-type field effect transistors (PFETs) in the high performance device region, wherein the high performance devices have a high performance pitch; and a plurality of high density devices comprising NFETs and PFETs in the high density device region, wherein the high density devices have a high density pitch, and wherein the high performance pitch is about 2 to 3 times the high density pitch; wherein the high performance device region comprises doped source and drain regions, NFET gate regions having an elevated stress induced using stress memorization technique (SMT), gate and source/drain silicide regions, and a dual stressed liner, and wherein the high density device region comprises doped source and drain regions, gate silicide regions, and a neutral stressed liner.

Abstract: Adaptive endurance coding including a method for storing data that includes receiving write data and a write address. A compression algorithm is applied to the write data to generate compressed data. An endurance code is applied to the compressed data to generate a codeword. The endurance code is selected and applied in response to the amount of space saved by applying the compression to the write data. The codeword is written to the write address.

Abstract: Provided are a graphene pattern and a process of preparing the same. Graphene is patterned in a predetermined shape on a substrate to form the graphene pattern. The graphene pattern can be formed by forming a graphitizing catalyst pattern on a substrate, contacting a carbonaceous material with the graphitizing catalyst and heat-treating the resultant.

Abstract: Provided are an organometallic precursor, wherein a carboxyhydrazide compound is coordinated to a central metal, and a metal film or pattern using the precursor. By using the organometallic precursor, highly pure metal films or patterns can be obtained through a simple low-temperature process.

Abstract: The invention includes inserting an object to be processed into a processing vessel, which can be maintained vacuum, and making the processing vessel vacuum; performing a sequence of forming a ZrO2 film on a substrate by alternately supplying zirconium source and an oxidizer into the processing vessel for a plurality of times and a sequence of forming SiO2 film on the substrate by alternately supplying silicon source and an oxidizer into the processing vessel for one or more times, wherein the number of times of performing each of the sequences is adjusted such that Si concentration of the films is from about 1 atm % to about 4 atm %; and forming a zirconia-based film having a predetermined thickness by performing the film forming sequences for one or more cycles, wherein one cycle indicates that each of the ZrO2 film forming sequences and the SiO2 film forming sequences are repeated for the adjusted number of times of performances.

Abstract: To provide a reformer that uses a relatively inexpensive granular catalyst and can provide a more uniform temperature distribution in a catalyst bed while suppressing increase in the size of the reformer and the required power and size of an auxiliary machine, and a more compact indirect internal reforming high temperature fuel cell while suppressing increase in cost. A reformer that produces a hydrogen-containing gas from a hydrocarbon-based fuel by a steam reforming reaction has a reactor vessel and a reforming catalyst bed packed with a granular catalyst having steam reforming activity in the reactor vessel, the reformer has a partition plate that divides the reforming catalyst bed into at least two sections, the partition plate has a thermal conductivity higher than effective thermal conductivity of the catalyst bed, and the partition plate extends in the reactor vessel from a part which is at a higher temperature in a rated operation to a part which is at a lower temperature in rated operation.

Abstract: A processing apparatus for processing a substrate G includes a processing chamber for processing the substrate; a depressurizing mechanism reducing an internal pressure of the processing chamber; and a transfer mechanism disposed in the processing chamber to transfer the substrate, wherein the transfer mechanism includes: a guide member; a stage for holding the substrate; a driving member for moving the stage; and a movable member supporting the stage and moving along the guide member. The guide member and the movable member are maintained so as not to contact each other by a repulsive force of magnets.

Abstract: A method of cleaning an screen in a manufacturing process step that employs a chamber including a drain line having a screen configured and disposed in the chamber above the drain line to trap soluble materials includes detecting a build-up of soluble material on the screen, ceasing a work operation in the chamber, and initiating a screen cleaning operation. The screen cleaning operation includes closing a computer operated valve fluidly connected to the drain line to fluidly isolate a portion of the chamber, automatically introducing an amount of solvent into the chamber once the computer operated valve is closed with the amount of solvent filling the chamber and/or the drain line to fully immerse the screen, and opening the operated valve after a predetermined amount of time to empty the chamber and the drain line of solvent once the soluble materials trapped on the screen are dissolved.

Abstract: An apparatus for multiplying a semiconductor test pattern signal, which firstly encodes a plurality of pattern signals to have different pattern types, and multiplies the encoded pattern signals according to an exclusive-OR (XOR) scheme in order to generate a single pattern signal, thereby recognizing a relationship between a pattern signal before the multiplication and the other pattern signal after the multiplication. A pattern-signal segmenting/outputting unit segments a semiconductor test pattern signal into a plurality of pattern signals, and simultaneously outputs the segmented pattern signals.

Abstract: A method of providing communications services to customer premise equipment (CPE) coupled to a television. The method includes operating a network element as a communications terminal server, the network element being part of a communications network. The network element receives from the CPE a request to initiate communications with a diagnostic system coupled to the communications network. The network element accesses a communications application executing on a communications server coupled to the communications network and pushes a communications interface to the CPE. The network element receives message information from the CPE and routes the message information to the communications server to initiate delivery of a message to the diagnostic system.

Abstract: The present invention relates to a musical instrument tuner, e.g. a guitar tuner, featuring simultaneous display of monophonic and polyphonic characteristics.