Abstract: The invention is a bidirectional transposition exchange sorter for performing two overlapped sort operations overlapped in time with input/output operations so as to consume zero time. The sorter operates on the basis of a stack of cells, each of which contains two item storage locations and a comparator. The cells are arranged in a sorter stack configuration with a shift register monitor for each cell and an extra shift register position at the top of the sorter stack and also at the bottom. The monitor carries an indication of the current transfer mode for the cell. Each sort is carried out as two semi-sorts, input and output, which semi-sorts are time overlapped with the input and output operations typical of sort operations in computers. A portion of the sort operation takes place during an input step, so as to result in a partial reconfiguration of an unordered sequence at the end of the input semi-sort.

Abstract: Mounting a position sensor equipped planar armature, in operative juxtaposition to a stator, by a spring colonnade basket of flexure columns, provides a low-friction precision X-Y-Theta positioner which has computer control of operations with feedback of actual position for closed loop servo operation.The spring colonnade basket provides freedom of motion in the X, Y and Theta (rotation about an axis mutually perpendicular to X and Y) dimensions without static friction present in sliding or rolling motions. The armature, which carries a gripper or other end effector and is free to move only within its own plane, is positioned by a motor made up of the armature and a stator mounted on a support platform. The stator is made up of a pair of U-shaped permanent magnets, each having U-shaped pole pieces mounted orthogonally to each other, at 45 degree angles to the axis of the magnet, so that each electromagnet controls motive power in both X and Y dimensions.

Abstract: Pinholes opened though insulating layers in Josephson integrated circuits are sealed by this post-etch anodization process. Josephson junction integrated circuits, in part, contain patterned metal films on an insulated groundplane. The patterns of conductors are created by adding a complete metal film over the insulating layers and subtractively etching to leave the desired conductor pattern. Pinholes in the underlying etch-stop insulating layer, in areas not covered by the remaining metal pattern, can be created during the subtractive etching process. Such pinholes may occur at sites made susceptible by contaminants, including flakes of process materials, which are present despite efforts to eliminate contaminants. Such pinholes provide unwanted conductive paths between the groundplane and subsequent metallization. Failures resulting from the effects of such unwanted conductive paths occur in a fashion not easily subject to identification, much less prevention.

Abstract: Suspending an armature on a parallelopiped basket of flexure springs, with a lateral effect cell position sensor and an X-Y source of motive power, provides a precision X-Y positioner with minimum static friction and with feedback of actual position for closed loop servo operation under computer control. The armature is arranged for X-Y motion within its own plane, and is arranged to carry a gripper, cutting tool, or other end effector. The parallelopiped basket includes a stator, a first set of flexure springs, a flexure spring carrier mounted on the first set of flexure springs, a second set of flexure springs mounted on the flexure spring carrier, and the armature mounted on the second set of flexure springs in turn mounted on the carrier. The basket suspends the armature with freedom of motion in the X and Y dimensions without static friction associated with sliding or rolling motions.

Abstract: Complex logical mechanism, for simultaneously producing output signals related logically to a set of input signals, implemented in transfer gate pairs. The first transfer gate of each pair is connected generally in series and is controlled by conduction according to the signals applied. The second transfer gate of each pair shunts the output node of its related first transfer gate to ground, when enabled by a control signal complementary to the data pattern applied to the first transfer gate of the pair. This direct control of line voltages affirmatively drives the lines or affirmatively grounds the lines to eliminate back circuits.Carry propagation to higher order bit positions is along carry propagate lines, with series connected carry propagate first transfer gates. Order positions not having data values appropriate for carry propagation do not transmit carry values--these transfer gates are not controlled for conduction, but are nonetheless subject to possible back circuits.

Abstract: A minimal corrosion resistor structure and deposition technique for superconductive circuits, with mutually protective niobium oxide passivation ring, gold corrosion barrier film and titanium resistive layer. Niobium has an intrinsic oxide of Nb.sub.2 O.sub.5, which must be removed from a contact area designated by an opening in photoresist; the development process leaves a photoresist overhang. The corrosion barrier film is deposited through the opening. The resistive metal layer is deposited over the corrosion barrier film through the same opening. The gold corrosion barrier film prevents the titanium resistive metal layer from making corrosive contact with the niobium. The titanium resistive metal layer encapsulates the gold corrosion barrier film to prevent diffusion between the gold and further layers to be deposited subsequently. It would normally be possible for the titanium to spill over the gold and make corrosive intimate contact with the niobium; a self-alignment technique prevents such contact.

Abstract: This interface permits the testing of high speed semiconductor devices (room-temperature chips) by a Josephson junction sampling device (cryogenic chip) without intolerable loss of resolution. The interface comprises a quartz pass-through plug which includes a planar transmission line interconnecting a first chip station, where the cryogenic chip is mounted, and a second chip station, where the semiconductor chip to be tested is temporarily mounted. The pass-through plug has a cemented long half-cylindrical portion and short half-cylindrical portion. The long portion carries the planar transmission line, the ends of which form the first and second chip mounting stations. The short portion completes the cylinder with the long portion for part of its length, where a seal can be achieved, but does not extend over the chip mounting stations. Sealing is by epoxy cement. The pass-through plug is sealed in place in a flange mounted to the chamber wall.

Abstract: A superconducting circuit including at least two DC SQUID stages integrated on the same superconducting chip and coupled by a circuit providing efficient transfer of current from the first SQUID stage to the second SQUID stage with large bandwidth. Each SQUID stage is comprised of a superconducting loop having at least two Josephson devices therein, there being shunt resistors across the Josephson devices to render them nonhysteretic. The coupling means between stages is directly connected to the shunt resistors of the first stage and includes a transmission line and an impedance circuit for matching the impedance of the transmission line, where the impedance circuit provides a real impedance over a large frequency range up to approximately the frequency of Josephson oscillation of the Josephson devices in DC SQUID. Feedback from the second SQUID stage to the first SQUID stage improves the input dynamic range and linearity of the circuit.

Abstract: The tester and method for nondestructively detecting nonlinearity faults in conductors includes the application of a composite AC and DC drive signal to the device under test in such manner that nonlinearities in the device under test produce fault signals including second harmonics, due to local changes of resistance caused by ohmic heating. Electronic filters are used to select out and amplify the second harmonic only, eliminating the direct current and fundamental frequency components of the initial test pulse, plus third and subsequent harmonics. The filtered second harmonic signals from the device under test are then phase-compared to a phase-shifted second harmonic signal produced by a frequency doubler from the test signal generator oscillator to cancel out the second harmonic signals from the good conductor; the remaining phase anomaly signals control a threshold detector remaining to provide fault indication.

Abstract: An inverted polycide extrinsic base contact serves as a diffusion source, yet still has low resistivity and is readily etchable down to silicon by techniques useful in manufacturing integrated circuits. The extrinsic base contact layer is made up of a metal silicide (e.g. WSi.sub.2) with an overlying doped polysilicon layer with coextensive apertures through doped polysilicon and metal silicide layers defining the emitter and intrinsic base region.The extrinsic base region is formed by diffusing boron impurities from the p.sup.+ polysilicon layer through the silicide layer. The silicide layer is of a metal silicide such as tungsten silicide (WSi.sub.2). The polysilicon layer acts as a diffusion source, since appropriate dopants (e.g., boron) diffuse rapidly through the metal silicide. Both the top surface of the p.sup.+ polysilicon layer and the sidewall edges of the polysilicon and silicide layers are covered by an insulating layer (e.g. SiO.sub.

Abstract: A drillhole centerline determining interposer having a central cavity enables a robot to probe the interposer to learn the location and orientation of the desired drillhole. The interposer is a mushroom shaped device with a planar head and a stem dimensioned to fit snugly in the hole to be drilled. The interposer, in addition to the planar head from which the perpendicular can be calculated through multiple probes, has a central pocket concentric to the interposer stem.The method of using the drillhole centerline determining interposer is to place a number of such interposers manually in position in holes in a master part located in the work envelope of the robot. The robot operator prepositions the probe at an initial position facing the cavity of the interposer for a drillhole locating sequence for the related drillhole. In sequence, the robot moves the probe from the initial position sufficient to clear the edge of the cavity and by multiple probes determines the plane of the interposer surface platform.

Abstract: Juxtaposing, on a common p-type substrate, an array of field effect transistor memory cells each including a random access memory dynamic RAM device comprising a floating gate portion and a storage node, and each including also a non-volatile unit comprising a double electron injector structure (DEIS) adjacent the floating gate portion, but remote from the storage node, provides a simple, low current dynamic random access memory array with non-volatile restart capability in case of power interruption.The non-volatile unit in each memory cell shares the control gate and substrate in common with the dynamic RAM device and thus shares access to the floating gate but is remote from the storage node. Situated between the floating gate and the substrate is a silicon-rich DEIS stack. During normal operation, the device functions as a dynamic RAM device. When non-volatile storage is required, electrons are written into the floating gate by raising the voltage on the control gate.

Abstract: A minimal corrosion resistor structure and deposition technique for superconductive circuits, with mutually protective niobium oxide passivation ring, gold corrosion barrier film and titanium resistive layer. Niobium has an intrinsic oxide of Nb.sub.2 O.sub.5, which must be removed from a contact area designated by an opening in photoresist; the development process leaves a photoresist overhang. The corrosion barrier film is deposited through the opening. The resistive metal layer is deposited over the corrosion barrier film through the same opening. The gold corrosion barrier film prevents the titanium resistive metal layer from making corrosive contact with the niobium. The titanium resistive metal layer encapsulates the gold corrosion barrier film to prevent diffusion between the gold and further layers to be deposited subsequently. It would normally be possible for the titanium to spill over the gold and make corrosive intimate contact with the niobium; a self-alignment technique prevents such contact.

Abstract: A process for reducing the particle current in the sub-gap range of all-Nb Josephson junctions. The process results in junctions having substantially increased values of V.sub.m. In order to reduce the single particle current, the reaction between the barrier layer oxide and the counter electrode is prevented by additional process steps. After forming the tunnel barrier (4) and before depositing the counter electrode (9), the tunnel barrier surface is covered with a thin, non-continuous layer (5) of a material such as gold which is not reacting with oxygen at process conditions. Subsequently, the non-covered barrier layer surface regions (7) are strongly oxidized thereby forming an oxide layer (8) of sufficient thickness to prevent electron tunneling in these regions.

Abstract: A Josephson current regulator circuit is described for regulating the gate current to a Josephson load device. The regulator circuit is located between the source of the gate current and the Josephson load, and is comprised of Josephson devices having a critical current less than the critical current of the Josephson load device. Each of the Josephson regulator devices has at least two states dependent upon the magnitude of the gate current. A resistance is associated with each of the Josephson regulator devices so that, when the state of the Josephson regulator device is changed, resistance is either introduced or removed from the circuit connecting the source and the Josephson load. This adjusts the magnitude of the gate current and maintains within a specified range the ratio of the gate current to the critical current of the Josephson load device.

Abstract: This patent specification describes a technique for protectively coating the electrodes in a plasma patterning device so as to minimize the effect of backscattering of electrode material.The potentials present in a patterning chamber are such that electrode sputtering material may occur. If the material of the electrode where the sample is mounted (RIE mode) or the material of the counterelectrode (plasma etch mode) of the reaction chamber is not etchable in the etchant present, electrode material can be sputtered off, backscattered on the polymer surface, and cause incomplete etching.Polymer films, patterned in fine dimensions by masking and etching, are widely used in microelectronics. If backscattered material present in the etch area cannot be etched as fast as the polymer film, the back-scattered material on the polymer film surface will cause partial masking and incomplete etching, leaving spikes of polymer.

Abstract: A transmission line having substantially reduced far-end forward wave crosstalk is characterized by a single layer of dielectric material having a thickness chosen to provide a forward wave coupling constant K.sub.F substantially equal to zero. The dielectric layer is located on a ground plane, and has a plurality of signal carrying conductors embedded in it. The thickness H of the dielectric underlayer below the signal carrying conductors is chosen to provide a transmission line having the selected values of impedance, etc. and substantially reduced forward wave crosstalk. The thickness t of the dielectric overlayer above the signal carrying conductors is chosen (for the selected value of thickness H of the dielectric underlayer) at the finite value critical thickness at which forward wave mutual capacitance and forward wave mutual inductance cancel to a null. The ground plane and the signal carrying conductors can be superconductors.

Abstract: The disclosure is a disposable low-mass processing channel and multilumen tube system for operation with a 2.omega. sealless centrifuge in which the centrifuge rotor rotates at 2.omega. axially to a platform rotor rotating at 1.omega. and to a fixed axial clamp on the multilumen tube.The blood processing channel is equipped with several tube lumens for access to different blood fractions to be separated by the centrifuge action. The plastic lumen tube is supported at each end by plastic reinforcing tubes clamped at clamp ends and ending in thrust drive bearings at the free ends. The thrust drive bearings are arranged for rotation about the multilumen tube and for fixation with respect to slotted conical reinforcing tube receivers on the 1.omega. rotor.Centrifugal force fixes the thrust bearings in place within the slotted conical reinforcing tube receivers. The low-mass central portion of the multilumen tube is unsupported; in operation it flies free in a wide bend.

Abstract: This invention provides improved non-volatile semiconductor memories which include a one device dynamic volatile memory circuit having a switching device, a storage capacitor and a non-volatile floating gate device disposed between the storage node and the switching device. The non-volatile floating gate device has a floating gate, a floating gate FET, a control gate and a voltage divider having first and second serially-connected capacitors, with the floating gate being disposed at the common point between the first and second capacitors. One of the capacitors includes a dual charge or electron injector structure and the capacitance of this capacitor has a value substantially less than that of the other capacitor.

Abstract: Combining an evaporation source and an ion beam source to provide a crucible anode surface, and heating that crucible anode surface to a high enough temperature to cause evaporation of anode material, provides for emission of atoms and ions selectively and independently controllable and directed along the identical path. A high melting point material auxiliary anode, connected to the crucible anode by a variable resistance, provides independent control of the vapor flux by selectively shifting the discharge current from auxiliary anode to crucible anode.The crucible anode contains the material which is to be evaporated. A gas plasma discharge is supplied between a heated cathode filament and the heated crucible anode. Electrons carrying a discharge current bombard the crucible anode material surface, causing a temperature rise which causes an increase in discharge current.