Abstract: A technique for forming integrated circuit device contacts includes the formation of nitride spacers along side gate electrodes for LDD definition. In addition, a nitride cap layer is formed over the gate electrodes. When a contact opening is formed through the interlevel oxide dielectric, the nitride cap and sidewall spacers protect the gate electrode from damage and shorting. A highly doped poly plug is formed in the opening to make contact to the underlying substrate. Metalization is formed over the poly plug in the usual manner.

Abstract: A contact opening through an insulating layer is filled with metal and etched back to form a metal plug within the opening. A metal interconnect line can then be formed over the contact, and makes electrical contact with the metal plug. Since the contact opening is filled by the metal plug, it is not necessary for the metal signal line to have a widened portion in order to ensure enclosure.

Abstract: A heat sink is mounted on an integrated circuit die within a Chip Scale Package, without a substrate supporting the heat sink. The heat sink may be mounted on a central portion of the active surface of the integrated circuit die without impeding wire bond connection of bond pads around peripheral region of the active surface. Alternatively, the heat sink may be mounted on the backside of one integrated circuit die within a stacked configuration of integrated circuits having facing active surfaces. The required form factor for Chip Scale Packages is maintained while providing heat dissipation for high input/output devices. The heat sink may be wire bonded to a ground connection to provide the packaged integrated circuit with shielding from electrical or electromagnetic interference.

Abstract: A method for forming an aluminum contact through an insulating layer includes the formation of an opening. A barrier layer is formed, if necessary, over the insulating layer and in the opening. A thin refractory metal layer is then formed over the barrier layer, and aluminum deposited over the refractory metal layer. Proper selection of the refractory metal layer and aluminum deposition conditions allows the aluminum to flow into the contact and completely fill it. Preferably, the aluminum is deposited over the refractory metal layer without breaking vacuum.

Abstract: In capacitive sensor circuits where physical contact is required and excess pressure may be inadvertently applied to the sensor surface, aluminum is not sufficiently hard to provide “scratch” protection and may delaminate, causing circuit failure, even if passivation integrity remains intact. Because hard passivation layers alone provide insufficient scratch resistance, at least the capacitive electrodes and preferably all metallization levels within the sensor circuit in the region of the capacitive electrodes between the surface and the active regions of the substrate are formed of a conductive material having a hardness greater than that of aluminum. The selected conductive material preferably has a hardness which is at least as great as the lowest hardness for any interlevel dielectric or passivation material employed.

Abstract: Acoustic emission samples for a chemical mechanical polishing process are acquired and analyzed using a Fourier transform to detect wafer vibrations characteristic of scratching. When excess noise levels are detected at frequencies or within frequency bands being monitored, the polishing process is halted and an alarm is generated for the operator. Such in-situ detection minimizes damage to the wafer being polished and limits the damage to a single wafer rather than a run of wafers. Polish endpoint detection may be integrated within the scratch detection mechanism.

Abstract: A low stress, low profile, cavity down wire bond or flip-chip BGA package is formed by injection molding or thermosetting of liquid crystal plastic (LCP) to form a die carrier including a polymer solder grid array (PSGA) of standoff posts formed during molding of the die carrier. The standoff posts are coated with copper during plating of the die carrier, on the surfaces of which conductive traces are etched from the standoff posts into a die cavity, including on the sidewalls of the die cavity, to wire bond sites or small solderable areas at the bottom of the cavity. After mounting of a wire bond or flip-chip integrated circuit die within the die cavity of the die carrier, the packaged integrated circuit is mounted on a main printed circuit board (PCB) substrate utilizing conductive paste to electrically connect the standoff posts to conductive solderable areas on the main PCB substrate.

Abstract: Silver interconnects are formed by etching deep grooves into an insulating layer over the contact regions, exposing portions of the contact regions and defining the interconnects. The grooves are etched with a truncated V- or U-shape, wider at the top than at any other vertical location, and have a minimum width of 0.25 &mgr;m or less. An optional adhesion layer and a barrier layer are sputtered onto surfaces of the groove, including the sidewalls, followed by sputter deposition of a seed layer. Where aluminum is employed as the seed layer, a zincating process may then be optionally employed to promote adhesion of silver to the seed layer. The groove is then filled with silver by plating in a silver solution, or with silver and copper by plating in a copper solution followed by plating in a silver solution.

Abstract: An improved method for fabricating interconnect signal lines in integrated circuits utilizes variations from standard process conditions to relieve stress during formation of metal signal lines. This prevents AlCu stress migration and TiN ARC cracking caused by subsequent high temperature processing. A relatively planar interconnect layer, being one which does not extend through an insulating layer to make contact with an underlying conductor, includes an initial wetting layer of Ti formed over a Ti/TiN layer remaining from earlier processing steps. An AlCu layer is deposited over the Ti at a high temperature with a low deposition rate. Finally, a TiN ARC layer is formed in the usual manner. However, decreased nitrogen flow during deposition lowers the nitrogen content of the ARC layer and prevents later cracking. Deposition conditions for the AlCu layer prevent the formation of voids during subsequent high temperature processing steps.

Abstract: A plurality N of capacitance sensing cells are arranged in a row/column array top to cooperate with a fingertip and produce an output signal that controls the movement of a cursor/pointer across a display screen. The output of each individual sensing cell is connected to the corresponding individual node of a resistor array that has N nodes arranged in a similar row/column array. A centroid output of the resistor nodes in row configuration provides an output signal for control of cursor movement in a row direction. A centroid output of the resistor nodes in column configuration provides an output signal for control of cursor movement in an orthogonal column direction. A mass signal output of the row/column resistor mode array provides a switch on/off signal.

Abstract: An apparatus and method for producing a wrap-around interconnect substrate (60) comprising a substrate (42) having semi-circular vias (62) having openings (64) created by separating through cylindrical vias (62) that were positioned along cutting lines (46a, 46b) that formed part of an integrated circuit substrate strip (40) prior to separation, is disclosed.

Abstract: A contact opening to a silicon substrate within which a metal contact is to be formed is cleaned by soft sputter etch to clean the substrate surface and remove any residue which would interfere with formation of a continuous silicide layer across the contact region. Contact profile protrusion at the interface between two dielectrics forming the insulating material through which the contact opening is formed is also reduced by the soft sputter etch. A barrier is formed over the contact region utilizing two discrete deposition steps, preferably separated by an interval of time and employing different process parameters, to provide a shift in the grain boundaries between the two barrier layers, creating diffusion traps at grain discontinuities inhibiting the diffusion of metal through the barrier layer. Performance of the barrier layer in preventing junction spiking is thereby increased.

Abstract: A hard mask, e.g., a silicon dioxide or silicon nitride film, is used to avoid organic polymer materials in copper plasma etch applications. The hard mask would be deposited as a blanket layer on the Cu metal layer and itself be patterned and etched with a conventional photolithographic resist pattern. The hard mask etch is stopped shortly before the Cu surface is exposed. Halting the hard mask etch before the Cu surface is exposed facilitates the use of conventional cleaning processes following the hard mask etch. The remaining thin layer of hard mask can be etched through during the beginning of the Cu metal etch process. Any remaining hard mask deposited on the Cu metal layer can form a part of a new dielectric layer.

Abstract: A silicide having variable internal metal concentration tuned to surface conditions at the interface between the silicide and adjoining layers is employed within an integrated circuit. Higher silicon/metal (silicon-rich) ratios are employed near the interfaces to adjoining layers to reduce lattice mismatch with underlying polysilicon or overlying oxide, thereby reducing stress and the likelihood of delamination. A lower silicon/metal ratio is employed within an internal region of the silicide, reducing resistivity. The variable silicon/metal ratio is achieved by controlling reactant gas concentrations or flow rates during deposition of the silicide. Thinner suicides with less likelihood of delamination or metal oxidation may thus be formed.

Abstract: A structure and method for dissipating charges comprising an underlying dielectric layer disposed over capacitor plates of sensor circuitry, and a conductive path and passivation layers disposed over the underlying dielectric layer wherein the conductive pad forms an electrically conductive path over at least a portion of the plates and diffuses electrostatic charges at the surface of the integrated circuit.

Abstract: A structure and method is disclosed for grounding an electrostatic discharge device of an integrated circuit to dissipate electrostatic charges comprising an underlying dielectric layer disposed over capacitor plates of sensor circuitry and a conductive layer disposed over the underlying dielectric layer, wherein the conductive layer diffuses electrostatic charges at the surface of the integrated circuit to ground. The conductive material not only dissipates electrostatic charges to the ground, but may also protect at least a portion of the edge of the sensor chip from mechanical stress.

Abstract: A contact is formed within an active region of a substrate at the edge of a die, preferably within the first metallization level in the active region of the substrate. An opening having sloped sidewalls is then etched into the back side of the substrate, exposing a portion of the active region contact. An interconnect is formed on the opening sidewall to connect the active region contact with a die contact pad on the backside surface of the substrate. The active region contact preferably spans a boundary between two die, with the opening preferably etched across the boundary to permit inter-connects on opposing sidewalls of the opening to each contact the active region contact within different die, connecting the active region contact to die contact pads on different dice. The dice are then separated along the boundary, through the active region contact which becomes two separate active region contacts.

Abstract: A first order phase-locked loop includes a tuning circuit which allows phase lock to be quickly reached, and to be maintained during transient situations such as loss of the data signal. Such an improved circuit has a tuning circuit for the voltage controlled oscillator which utilizes two capacitors. Two signals are used to drive a first, larger, capacitor, and have the same duty cycle when the capacitor voltage is proper and the voltage controlled oscillator is operating at the correct frequency. A second, smaller, capacitor is used to quickly achieve phase lock with the incoming data signal. The use of two oppositional signals to drive the capacitors allows them to more quickly be charged or discharged to the proper voltage level to obtain both frequency and phase lock with the incoming data signal. Thus, the circuit is able to quickly acquire lock during power-up, or reacquire lock under circumstances where the operating condition of the circuit changes suddenly.

Abstract: A method is provided for forming a transistor spacer etch endpoint structure of an integrated circuit, and an integrated circuit formed according to the same. A gate is formed over a portion of a substrate. A dielectric layer is formed over the integrated circuit and an oxide layer is formed over the dielectric layer. The oxide layer is patterned and etched to form sidewall oxide spacers on each side of the gate and over a portion of the dielectric layer. The dielectric layer not covered by the sidewall oxide spacers is then removed.

Abstract: Metal taps for bus conductors are formed within an active layer, within one or more of the metallization levels, on the active side of a substrate in the area of a bus via. Alignment marks are formed in the same metallization level, in the same area. A slot is then blind etched from the backside of the substrate, exposing the metal taps and the alignment marks. The slot is etched, using an oxide or nitride hard mask, into the backside surface of the substrate with significantly sloped sidewalls, allowing metal to be deposited and patterned on the backside. An insulating layer and deposited metal on the backside surface of the substrate may require a blind etch to expose alignment marks, if any, but front-to-back alignment precision utilizing the exposed alignment marks may permit much smaller design rules for both the metal tabs and the backside interconnects formed from the metal layer. Backside contact pads may also be formed from the metal layer.