Abstract: Grooves are formed in a single crystal silicon wafer in a pattern to encircle surface areas. Silicon dioxide is placed in the grooves and on the surface and then removed from certain of the areas. Layers of silicon are epitaxially grown only on these areas and their surfaces are oxidized. Polycrystalline silicon is deposited to a thickness greater than that of the epitaxial layers. Both sides of the wafer are ground and polished to produce flat, planar, opposite surfaces; one surface exposing surface areas of the epitaxial layers, the other surface exposing the silicon dioxide in the grooves. The resulting substrate has two types of silicon sections, each of which is electrically isolated from the other by silicon dioxide partitions. One type of section is of silicon of the original wafer, has a surface area in only one surface, and is suitable for the fabrication of low voltage, low power devices therein.

Abstract: Junction field effect transistor, specifically a static induction transistor and method of fabricating. A low resistivity N-type layer is formed at the surface of a high resistivity N-type epitaxial layer which has been grown on a low resistivity N-type substrate of silicon. The surface of the low resistivity N-type layer is coated with silicon nitride, portions of the silicon nitride are removed and the silicon is etched to form parallel grooves with interposed ridges of silicon. Silicon dioxide is grown in the grooves, removed from the end walls of the grooves, and P-type zones are formed at the end walls of the grooves. The depth of the grooves is increased by etching to remove most of the P-type zone underlying each groove while leaving laterally extending P-type portions. Oxygen is implanted to convert the remainder of the P-type zones underlying the end walls of the grooves to silicon dioxide. Metal layers are deposited in the bottoms of the grooves making contact with the P-type portions.

Abstract: Junction field effect transistor, specifically a static induction transistor, and method of fabricating. A low resistivity N-type surface layer is formed at the surface of a high resistivity N-type epitaxial layer which has been grown on a low resistivity N-type substrate of silicon. The surface of the surface layer is coated with silicon dioxide and portions of the silicon dioxide layer are removed to expose alternating gate surface areas and source surface areas. P-type conductivity material is diffused into the silicon from the gate surface areas to produce zones of graded concentration. The difference in concentration of N-type conductivity imparting material in the surface layer and in the remainder of the epitaxial layer causes the resulting P-type gate regions to extend laterally toward each other so as to produce narrow channel regions at a depth beyond the surface layer while limiting the lateral extensions of the P-type gate regions adjacent to the surface.

Abstract: Junction field effect transistor, specifically a static induction transistor and method of fabricating. A low resistivity N-type layer is formed at the surface of a high resistivity N-type epitaxial layer which has been grown on a low resistivity N-type substrate of silicon. The surface of the low resistivity N-type layer is coated with silicon nitride, portions of the silicon nitride are removed, and the silicon is etched to form parallel grooves with interposed ridges of silicon. Silicon dioxide is grown in the grooves, removed from the end walls of the grooves, and P-type zones are formed at the end walls of the grooves. Metal contacts are applied to the P-type zones at the end walls of the grooves. The grooves are filled with filler material and materials are etched away to produce a flat, planar surface with low resistivity N-type silicon of the ridges exposed in the surface and with filler material in the grooves also exposed at the surface.

Abstract: A method of determining the photo-induced voltage at the surface of a specimen of semiconductor material. A beam of monochromatic light of low intensity and of wavelength shorter than that corresponding to the energy gap of the semiconductor material is directed at the specimen. The light beam is modulated, and the resulting AC photovoltage signal induced at the surface of the specimen is measured. Measurements of surface photovoltage made in this way can be used to determine the surface space-charge capacitance of the specimen of semiconductor material and, therefore, to characterize the properties of the semiconductor material using conventional capacitance analysis.

Abstract: A primary electrochemical cell having an oxidizable active anode material, a cathode current collector, and an electrolytic solution comprising a liquid cathode material and an electrolyte solute dissolved therein. The cathode current collector includes a polymer selected from the group consisting of polyenes, polyphenylenes, polyheterocyclics, mixtures thereof, copolymers thereof, and cross linked polymers thereof.

Abstract: Electrochemical cell having at least two battery stacks each including an electrode assembly wound on a spool. Each electrode assembly includes two elongated electrode structures, an anode electrode structure and a cathode current collector structure. The electrode structures are wound around the center post of the spool with the anode electrode structure making contact with one of the conductive flanges of the spool and the cathode current collector structure making electrical contact with the other conductive flange of the spool. The flanges in contact with the anode structures of the battery stacks are connected to one external terminal of the cell, and the flanges in contact with the cathode current collector structures of the battery stacks are connected to another external terminal of the cell.

Abstract: An electrode assembly adaptor to be wound on a spool to provide a battery stack for an electrochemical cell. The spool has a central post of insulating material and two conductive flanges. The electrode assembly includes two elongated electrode structures, an anode electrode structure and a cathode current collector electrode structure. Each electrode structure includes a metal substrate having deflective, resilient contact tabs spaced along one edge. An appropriate electrode material is adherent to the substrate. The electrode assembly of the two electrode structures with intervening insulating material is adapted to be wound around the post of the spool with the contact tabs of the anode electrode structure making contact with one of the flanges and with the contact tabs of the cathode current collector electrode structure making contact with the other flange.

Abstract: Electrochemical cell having a battery stack of an electrode assembly wound on a spool. The electrode assembly includes two elongated electrode structures, an anode electrode structure and a cathode current collector structure. The spool has a central post of insulating material and two conductive flanges. The two electrode structures are wound around the post with insulating material between them, the anode electrode structure making contact with one of the flanges and the cathode current collector structure making contact with the other flange.

Abstract: An acoustic surface wave device having an acoustic energy absorber of acoustic surface wave absorbing material positioned between the input transducer and the output transducer. The acoustic energy absorber increases the insertion loss of the device and consequently suppresses triple transit signals in the device.

Abstract: An acoustic surface wave device having a pair of attenuating transducers positioned between the input transducer and the output transducer. Each attenuating transducer has two sets of interleaved electrodes which are connected together by a thin film resistor. The attenuating transducers are spaced apart so that their reflected signals are 180.degree. out of phase, and thus tend to cancel each other. The attenuating transducer arrangement increases the insertion loss of the device and consequently suppresses triple transit signals in the device.

Abstract: A body of silicon has sectors of N-type and P-type covered by silicon oxide gate layers with adjacent regions covered by a thicker silicon oxide field layer. Gate members of N-type polycrystalline silicon are placed on the gate layers to define an N-type channel region in the N-type sector and a P-type channel region is the P-type sector. P-type conductivity imparting material is introduced into the remaining regions of the N-type sector to convert them to P-type source/drain regions with an intervening N-type channel region, and N-type conductivity imparting material is introduced into the remaining regions of the P-type sector to convert them to N-type source/drain regions with an intervening P-type channel region. The exposed silicon oxide is grown to a thicker field layer and a protective oxide is formed on the polycrystalline gate members.

Abstract: An electrochemical cell having an oxidizable active anode material, a cathode current collector, and an electrolytic solution comprising a reducible liquid cathode material and an electrolyte solute dissolved therein. The cathode current collector includes a mixture of carbon and copper sulfide on a conductive substrate.

Abstract: A circuit breaker having a contact opening and closing mechanism including a contact actuator member which is moved between a first position and a second position to close and open the contacts. The movable contact is mounted on one end of an elongated contact carrier which is connected in its central region by means of a pin and slot combination (providing a free floating coupling arrangement) to the contact actuator member. A compression spring is positioned between the contact actuator member and a portion of the contact carrier between the pin and slot combination and the other end of the contact carrier. When the contact actuator member is in the first position, the compression spring produces a torque in one direction about the other end of the contact carrier forcing the contacts closed.

Abstract: An acoustic surface wave filter device having an input transducer of interleaved overlapping electrode structure. Acoustic surface wave absorbing material is disposed on a region of the electrodes within the overlap envelope and back of the electrodes having the maximum amount of overlap. The absorbing material suppresses waves traveling backward in the transducer thus greatly reducing the problem of spurious signals caused by acoustic reflections from the edges of the electrodes within the overlap envelope.

Abstract: A circuit breaker having a contact opening and closing mechanism including a contact actuator member which is moved between a first position and a second position to close and open the contacts. The movable contact is mounted on one end of a contact carrier which is pivotally mounted at its central region to the contact actuator member. A leaf spring is positioned between the other end of the contact carrier and the circuit breaker case. When the contact actuator member is in the first position, the leaf spring produces a torque on the contact carrier in one direction about the pivot forcing the contacts closed. When the contact actuator member moves from the first position toward the second, the leaf spring becomes ineffective and a torsion spring which engages the contact carrier and the contact actuator arm produces a torque pivoting the contact carrier in the opposite direction thus enhancing the contact opening process.

Abstract: A circuit breaker having an overload mechanism including a support member mounted in the circuit breaker housing. One end of an elongated bimetallic element is fixed to one end of the support member. An armature element is mounted at one end to the one end of the bimetallic element and its other end has a latching surface engaging a trip arm to hold it in a set position. The support member has a reference surface adjacent to its other end and the trip arm is biased against it. An overload current causes the other end of the bimetallic element to deflect, moving the other end of the armature element with it and disengaging its latching surface from the trip arm. The released trip arm pivots to a tripped position causing the breaker contacts to open. The dimensional relationships between the reference surface and the latching surface determine the tripping characteristics of the circuit breaker.

Abstract: A battery of electrochemical cells employing several identical housing sections of conductive material stacked in a series arrangement with insulation between them at the points of connection. Each two adjacent housing sections form an enclosed chamber. Each chamber contains the electrochemical system of an electrochemical cell with the anode members in contact with one of the housing sections forming the chamber and the cathode members in contact with the other of the housing sections forming the chamber. The electrochemical cells within each chamber form a battery of cells arranged in series both physically and electrically with each housing section serving as the positive terminal for the cell of one chamber and the negative terminal for the cell of an adjacent chamber.

Abstract: A circuit breaker having an overload mechanism including an elongated bimetallic element having one end pivotally mounted in the circuit breaker housing and the other end pivotally positioned at one end of an armature element. The armature element has a latching surface engaging a trip arm to hold it in a set position. An overload current causes the bimetallic element to bend. Since the ends of the bimetallic element are constrained, its central portion moves causing the armature element to pivot disengaging its latching surface from the trip arm. The released trip arm pivots to a tripped position causing the breaker contacts to be opened.

Abstract: Method of fabricating a monolithic integrated circuit structure incorporating complementary metal-oxide-silicon field effect transistors (CMOS FET's) including providing a body of silicon produced by conventional techniques having a sector of N-type and a sector of P-type each covered by a thin silicon oxide layer and a thin silicon nitride layer. The regions of the body adjacent to each of the sectors are covered by a thicker silicon oxide field layer. Portions of the thin nitride and oxide layers are removed to expose spaced apart zones in each of the sectors. Adherent contact members of low resistivity polycrystalline silicon of N and P-type conductivity are formed in contact with the exposed surfaces of the zone in the P and N-type sectors, respectively. Where N and P-type contact members are contiguous a rectifying junction is produced. The surfaces of the polycrystalline contact members are metallized with a highly conductive material, thereby shorting out the rectifying junctions.