Abstract: In one embodiment, a device includes but is not limited to: a first integrated circuit affixed to a substrate; an electronic circuit component affixed to the substrate; a first encapsulation structure encasing the first integrated circuit; a second integrated circuit affixed to the first encapsulation structure; and a second encapsulation structure which at least partially encases the first encapsulation structure, the first integrated circuit, and the electronic component.

Abstract: A universal serial bus (USB) smart card can be automatically reset from a mute mode. A processor on the smart card writes its status to a status register. A USB device controller polls the status register to determine the status of the processor. If the status from the status register indicates that the processor has entered the mute mode, the USB device controller initiates generation of a reset signal to reset the processor out of the mute mode.

Abstract: This invention relates to a method for manufacturing a semiconductor device having polysilicon lines with micro-roughness on the surface. The micro-rough surface of the polysilicon lines help produce smaller grain size silicide film during the formation phase to reduce the sheet resistance. The micro-rough surface of the polysilicon lines also increases the effective surface area of the silicide contacting polysilicon lines thereby reduces the overall resistance of the final gate structure after metallization.

Abstract: A current amplifier comprising an amplifier circuit with overall negative feedback and an output current amplification circuit. In one embodiment, a photodiode provides a current to be amplified and the amplifier circuit and the output current amplification circuit are implemented using MOS technology.

Abstract: A semiconductor structure includes a substrate, a dielectric layer disposed on the substrate, a layer of undoped silicate glass disposed on the dielectric layer, a layer of borophosphorous silicate glass on the layer of undoped silicate glass, and a planar dielectric layer disposed on the layer of borophosphorous silicate glass, the layers of undoped silicate glass, borophosphorous silicate glass, and planar dielectric together forming a pre-metal dielectric stack. The planar dielectric may include plasma-enhanced tetraethyl orthosilicate.

Abstract: A voltage booster device to selectively assume an active status and a stand-by status with a first terminal to assume a respective electric potential and associated to a first capacitor, a second terminal associated to a second capacitor and selectively connectable to the first terminal, and a discharge circuit for discharging the first capacitor thus reducing the electrical potential of the first terminal, the discharge circuit being activated when said device is in the stand-by status and the second terminal is disconnected from said first terminal.

Abstract: The contact opening through an insulating layer is formed having a straight sidewall portion and a bowl shaped sidewall portion. The bowl shaped sidewall portion is near the top of the insulation layer to provide an enlarged diameter of the contact opening at the top relative to the bottom. A conductive material is then formed in the contact opening in electrical contact with a lower conductive layer. The conductive material forms a plug having an enlarged head, such as a nail head or a flat heat screw shape. The enlarged head protects the silicon and a barrier layer, if present, within the contact from being etched by any subsequent anisotropic etches. Thus, when an electrical interconnection layer such as aluminum is formed overlying the contact plug, the plug acts as an etch stop to prevent etching of a barrier layer of the barrier layer within the contact opening.

Abstract: A method of operating a vertical DMOS transistor associated with a Schottky diode, the method including diverting current from flowing through a body-to-drain pn junction diode to flowing through the Schottky diode when a metallic source contact becomes more positive than a drain of the DMOS transistor by forward conduction voltage of the Schottky diode to reduce the amount of source current reaching the substrate and reducing operational characteristics of parasitic devices associated with the integrated circuit.

Abstract: A semiconductor structure comprises a silicon substrate of a first conductivity type including wells of a second conductivity type formed on a surface thereof. The wells may be laterally isolated by shallow trench isolation. Transistors are formed in the wells by first forming several chemically distinct layers. Anisotropic etching then forms openings in a top one of the layers. A blanket dielectric layer is formed in the openings and on the layers. Anisotropic etching removes portions of the blanket dielectric layer from planar surfaces of the substrate but not from sidewalls of the openings to form dielectric spacers separated by gaps within the openings. Gate oxides are formed by oxidation of exposed areas of the substrate. Ion implantation forms channels beneath the gate oxides. Polysilicon deposition followed by chemical-mechanical polishing defines gates in the gaps. The chemically distinct layers are then stripped without removing the dielectric spacers.

Abstract: An apparatus for verifying the data retention in a non-volatile memory is described which comprises at least one multiplexer and at least one shift register. The multiplexer and the at least one shift register are disposed so that the data of the non-volatile memory are in input to the multiplexer the output of which is in turn in input to the at least one shift register. The apparatus comprises a logical circuitry which by suitable commands controls the data transfer from said multiplexer to said at least one shift register, the data loading and the output data shifting in said at least one shift register.

Abstract: An H-bridge circuit having a boost capacitor coupled to the gate of the low-side driver. A driver, in the form of a switching transistor is connected between the load and ground, thus providing a low-side driver. A capacitor is coupled to the gate of the low-side driver to provide a boosted voltage for rapid turn on of the gate. The size of the capacitor selected to be similar to the size of the capacitance associated with the low-side driver transistor.

Abstract: A nonvolatile memory device is described comprising a memory array, a row decoder and a column selector for addressing the memory cells of the memory array, and a biasing stage for biasing the array access device terminal of the addressed memory cell. The biasing stage is arranged between the column selector and the memory array and comprises a biasing transistor having a drain terminal connected to the column selector, a source terminal connected to the array access device terminal of the addressed memory cell, and a gate terminal receiving a logic driving signal, the logic levels of which are defined by precise and stable voltages and are generated by a logic block and an output buffer cascaded together. The output buffer may be supplied with either a read voltage or a program voltage supplied by a multiplexer.

Abstract: The amplifier circuit includes at least one amplification branch having an input transistor, an output transistor, having a source terminal connected to the input terminal and a drain terminal connected to a first output terminal, and a gain raising stage, having an input and an output connected to the source terminal and, respectively, to a gate terminal of the output transistor. The amplifier circuit includes, moreover, a compensation capacitor connected between the gate terminal and the drain terminal of the output transistor.

Abstract: A distance sensor has a capacitive element in turn having a first plate which is positioned facing a second plate whose distance is to be measured. In the case of fingerprinting, the second plate is defined directly by the skin surface of the finger being printed. The sensor comprises an inverting amplifier, between the input and output of which the capacitive element is connected to form a negative feedback branch. By supplying an electric charge step to the input of the inverting amplifier, a voltage step directly proportional to the distance being measured is obtained at the output.

Abstract: A semiconductor device includes a semiconductor substrate having a first conductivity and a semiconductor layer disposed on the substrate and also having the first conductivity. A recess is disposed in the layer and has a sidewall and a bottom. A gate insulator is disposed on the layer and extends to the sidewall of the recess, and a gate is disposed on the gate insulator. A body region is disposed in the semiconductor layer beneath the gate, has a second conductivity, and is contiguous with the sidewall of the recess. A source region is disposed in the body region, has the first conductivity, and is contiguous with the sidewall. A Schottky contact is disposed on the bottom of the recess, and a source metallization is disposed on the Schottky contact and on the sidewall of the recess.

Abstract: A semiconductor structure includes a substrate, a dielectric layer disposed on the substrate, a layer of undoped silicate glass disposed on the dielectric layer, a layer of borophosphorous silicate glass on the layer of undoped silicate glass, and a planar dielectric layer disposed on the layer of borophosphorous silicate glass, the layers of undoped silicate glass, borophosphorous silicate glass, and planar dielectric together forming a pre-metal dielectric stack. The planar dielectric may include plasma-enhanced tetraethyl orthosilicate.

Abstract: An integrated circuit includes a sensor that reads a fingerprint and provides data corresponding to the fingerprint to a computation engine coupled to the sensor. The computation engine compares the data to stored data and enables a smart card coupled to the computation engine when the data and the stored data match. The computation engine may include an array of flash memory cells arranged in pairs of rows, where flash memory cells in any one row have sources coupled to a common row line and a plurality of conductance mode neurons each having first and second inputs coupled to first and second row lines forming a respective pair of rows. The neurons are coupled to the flash memory cells through a buffer circuit sets a drain-source voltage of the flash memory cells in the row pair coupled to the neuron.

Abstract: The high-voltage resistor is of the vertical type, and is formed in a chip which includes a high-voltage region and a low-voltage region superimposed on the high-voltage region, both having a first conductivity type. An isolation region, at least partially buried, extends between the high-voltage region and the low-voltage region, and delimits a vertical resistive region connecting the high-voltage region to the low-voltage region.

Abstract: The method applies to non-volatile semiconductor memories with cells arranged in rows and in columns, in which each cell has a first terminal, a second terminal, and a third terminal connected, respectively, to a row line, to a column line, and to a common node by respective connection strips. In order to form connections with low resistivity and consequently to save semiconductor area, the method provides for the formation of an oxide layer which covers the connection strips of the first terminals and of the third terminals, the formation of channels along the connection strips until the surfaces thereof are exposed, and the filling of the channels with a material having a resistivity lower than that of the connection strips.

Abstract: A Content Addressable Memory (CAM) cell is disclosed having an physical implementation of transistors for improving the semiconductor substrate area utilization of the CAM cell and the CAM array. The CAM cell comprises a first and second memory circuit and a compare circuit. The compare circuit of six transistors formed over two active regions. The local interconnect between the compare circuit and the first memory circuit formed of a polysilicon region. The local interconnect between the compare circuit and the second memory circuit formed of polysilicon and conductive regions.