Abstract: A multichip semiconductor assembly comprising a semiconductor chip stack comprising first and second chips, each having an active surface including an integrated circuit and a plurality of input/output contact pads; a leadframe for interconnecting semiconductor integrated circuits having a plurality of leads, portions of said leads comprising undulating patterns and a surface metallurgy for promoting solder wetting, said leadframe being disposed between said first and second chips, and said active surface of said first chip positioned in front of said active surface of said second chip; and connections between each of said contact pads of said first chip to one of said leads, respectively, and between each of said contact pads of said second chip to one of said leads, respectively, said connections comprising solder balls, whereby the connections to at least one of said leads are common between said first and second chips.

Abstract: An architecture and method of fabrication for an integrated circuit 200 having a bond pad 208; at least one portion of said integrated circuit disposed under said contact pad and electrically connected to said pad through a via 205; a combination of a bondable metal layer 207, a stress-absorbing metal layer 203, and a mechanically strengthened, electrically insulating layer 204; and said combination of layers separating said contact pad and said portion of said integrated circuit, and having sufficient thickness to protect said circuit from bonding impact.

Abstract: A leadframe for use with integrated circuit chips Comprising a base metal having a plated layer of nickel fully covering said base metal; a plated layer of palladium on said nickel layer, selectively covering areas of said leadframe intended for bonding wire attachment; and a plated layer of solder on said nickel layer, selectively covering areas of said leadframe intended for parts attachment.

Abstract: The invention relates to packages of semiconductor devices, specifically of the surface mount and Quad Flat Pack families, that can be used in current semiconductor device production, and to a method of automated testing. The packages have a plurality of insulating tie bars supporting a multitude of leads. The tie bars are designed so that they comprise celectrically conductive vias in a pattern expanding the effective lead pitch for more convenient testing, without introducing unwanted side effects. The full benefit of the expanded lead pitch can be exploited during the electrical testing of the device which utilizes a test apparatus simplified for an automated testing procedure. The base of the apparatus includes a multitude of electrically conductive and mechanically elastic passageways with surface contours adapted for contacting the metallic end connectors of the semiconductor device-to-be-tested, as well as the metallic connector to the tester.

Abstract: A semiconductor device is disclosed. The device includes an integrated circuit chip having integral de-coupling capacitors on the chip backside. The de-coupling capacitors includes a metal layer in intimate contact with the semiconductor substrate of the integrated circuit, a dielectric layer and a second metal layer. The second metal layer is segmented to form multiple capacitors, and each capacitor is interconnected to power supplies of the chip. Interconnection to different integrated circuit packages is provided. A method of making the semiconductor device is also disclosed.

Abstract: A process for the fabrication of an integrated circuit assembly, using thin film platinum metallization to provide edge-side contacts suitable for solder ball connections. Three-dimensional laser ablation may be used for patterning metal films. A multi-chip assembly may be formed using orthogonal edge-side mounting on a substrate.

Abstract: A double sided electrical connection flexible circuit particularly useful as a substrate for an area array integrated package, and the method of fabricating the structure is described. A circuit having interconnections on one surface and solder ball contact pads on the second surface are interconnected by copper plated from a single surface in order to avoid entrapment of air pockets. In one embodiment, the conductive vias are formed from a copper film which extends from the solder ball contact pads, which may be indented, providing a well for solder balls in the contact pad.

Abstract: A semiconductor device comprising a thermally conductive foil including a chip mount portion having first and second surfaces; an integrated circuit chip attached to said first surface; a body of encapsulation material molded around said chip and said first surface such that it leaves said second surface exposed; and said second surface comprising means for forming thermal contact, thereby creating a path for dissipating thermal energy from said chip. Said means for thermal contact comprise a configuration of said second surface suitable for direct thermal attachment to a heat sink. Alternatively, said means for thermal contact comprise a configuration of said second surface suitable for thermal attachment including solder balls between the chip and the heat sink.

Abstract: A semiconductor wafer is disclosed comprising a substrate having a surface carrying an array of integrated circuit chips bordered by dicing lines; at least two sets of substantially parallel structures within each of said dicing lines, each set extending along the edge of a chip on opposite sides of each dicing line, respectively; each of said sets comprising at least one continuous barrier wall adjacent each chip, respectively, and a sacrificial composite structure in combination therewith, between said wall and the center of the dicing line, said composite structure including means of dispersing the energy associated with crack propagation, whereby any crack having sufficient energy to penetrate the composite structure will be transformed into a plurality of weaker cracks, non of which will be capable of penetrating said wall.

Abstract: A packaged semiconductor device with electrical redundancy for improved mechanical reliability and a method for fabrication are disclosed. The device comprises a semiconductor chip having an integrated circuit, said circuit having a multitude of electrical terminals with metal contact pads; an interposer of electrically insulating material having electrically conductive paths extending through said interposer from one surface to the opposite surface forming electrical entry and exit ports on said insulating interposer; said interposer with its entry and exit ports having regions of different mechanical stress levels; each of said chip contact pads being electrically connected to a respective entry port of said interposer and by means of said conductive paths to at least one respective exit ports; and at least one of said entry ports being electrically connected to a plurality of high-stress exit ports in parallel.

Abstract: A semiconductor device, especially a Ball Grid Array or Chip Scale Package, comprising an integrated circuit chip having at least one input/output terminal; a body of encapsulation material molded around said chip, forming a generally flat surface including at least one dimple having a suitable size and shape to receive a solder ball or solder paste; and said dimple having an electrically conductive solderable surface connected to said terminal.

Abstract: A video wire bonder system includes a processor (12) coupled to an imaging station (14), an input device (16), a display (18), and a memory (20). Processor (12) generates an image overlay (30) having a graphical representation of each video wire bond between a bonding pad (34) of a semiconductor die (21) and a lead finger (35) of an associated lead frame (22). Processor (12) generates a template (28) comprising an organization of video wire bond parameters associated with each video wire bond, and stores template (28) in memory (20). Display (18) displays image overlay (30) to provide visual feedback to an operator while the operator is programming template (28).

Abstract: A semiconductor device having high and low voltage transistors on the same chip. High voltage NMOS transistor 76 comprises a polysilicon gate 40 doped at first dopant level. Low voltage NMOS transistor comprises a polysilicon gate 44 doped at a second dopant level. The second dopant level is higher than the first. High voltage PMOS transistor 84 comprises a polysilicon gate 48 doped at a third dopant level. Low voltage PMOS transistor comprises a polysilicon gate 52 doped at a fourth dopant level. The fourth dopant level is higher than the third.

Abstract: A mass production process for semiconductor circuits and modules using a combination of thin film platinum metallization dielectric masking, and three-dimensional laser ablation, in conjunction with a solder combinations and melting temperatures. These combinations have been employed for the fabrication of silicon chips as well as connective substrates. Furthermore, spacing films with adhesive properties on both surfaces have been successfully used for assembling multi-chip cubes.

Abstract: A stacked multichip assemblage including a plurality of integrated circuit die directly attached to a substrate having pads corresponding to terminals on the die, and interconnections between the die, and also to external contacts. The stacked integrated circuit arrangement includes a first chip(s) having an array of bumped terminals positioned on the corresponding pads of the substrate, a larger integrated circuit chip having perimeter bump terminals located over the first chip, and the terminals directly bonded to corresponding pads on the substrate.

Abstract: A bump connection structure and a method of attachment to integrated circuits or packages is provided which comprises a prefabricated core structure coated with solderable metal layers to form a composite bump. Said composite bump is aligned to contact pads of the chip or package which have been coated with solder paste, and the assembly heated to form a metallurgical bond. The prefabricated core structures are comprised of metal, plastic or ceramic of the size and dictated by package standards. The connection structure is preferably lead free.

Abstract: A method of encapsulating a semiconductor device comprising the steps of providing a mold having top and bottom halves each with cavities for holding semiconductor devices, and further having gates and runners for feeding encapsulation material into said cavities; lining said cavities with protective plastic films; providing a plurality of semiconductor integrated circuit chips, each having an outline; providing an electrically insulating interposer; assembling said chip and said interposer, loading said assembly into said mold and introducing into said mold a low-viscosity, high adhesion encapsulation material; at least partially curing said encapsulation material, thereby forming a flat, high-luster surface; opening said mold and removing said interposer together with said encapsulated chips from said mold; attaching an array of solder balls to the exposed surface of said interposer; and singulating said encapsulated semiconductor devices, thereby forming devices having an outline substantially the same as

Abstract: A device having a thin metallic coating, such as tin which forms strong bonds to copper is provided on the bond pads of an integrated circuit having copper metallization; surface oxidation of the coating is self limiting and the oxides are readily removed, further the coated bond pad forms intermetallics at low temperatures making it both solderable and compatible with wire bonding. A low cost process for forming tin coated copper bonding pads is provided by electroless plating.

Abstract: The invention relates to a flexible and cost-effective method for fabricating customized rerouting metallization of the circuit contact pads. Localized depositions of insulating as well as conducting paths are provided with the capability for manufacturing multi-layered networks of interconnection. In a gas-filled chamber, either a focused laser, or an unfocussed lased impinging through a mask, is used to locally heat selected areas of the chip surface. The gas decomposes on the heated areas, depositing insulating or conducting material precisely on the heated surface areas, respectively. With this additional flexibility for product design and assembly, a number of interesting new products can now be fabricated which are in demand in both commercial and military markets.

Abstract: Multichip semiconductor assembly comprising a semiconductor chip stack comprising first and second chips, each having an active surface including an integrated circuit and a plurality of input/output contact pads, and a passive surface; a leadframe for interconnecting semiconductor integrated circuits having first and second surfaces, a plurality of leads, and a chip mount pad, said leadframe being disposed between said first and second chips, and at least a portion of said passive surface of said first chip being attached to said first surface of said chip mount pad; bonding wire connections between each of said contact pads of said first chip to said first surface of one of said leads, respectively; and solder ball connections between each of said contact pads of said second chip to said second surface of one of said leads, respectively, whereby the connections to at least one of said leads are common between said first and second chips.