Abstract: A method produces structures for semiconductor components, particularly BH laser diodes, in which a mask material is applied to a sample in a masking step. The etch rate in an etching step depends upon the composition and/or nature of the mask material. The etch rate is selected in such a way so that the mask is at least partly dissolved during the etching step. It is therefore possible to easily remove the mask from the semiconductor material and apply additional layers in situ during the fabrication of semiconductor components.

Abstract: A device for transporting sheets in a region of a selectively usable sheet pile feeder includes a crosscutter of a sheet-fed processing machine having conveyor belts and contact-pressure devices cooperating therewith for feeding the sheets from the crosscutter, and a separating device of the sheet pile feeder, whereon contact-pressure devices are disposed.

Abstract: From a circuit diagram, an electrically connected circuit diagram network is selected. From a layout representing the circuit diagram, an electrically connected layout network is selected that represents the circuit diagram network. A first electrical terminal connection of a first component is selected that connects the first component with the circuit diagram network or with the layout network. A second electrical terminal connection of a second component is selected that connects the component with the circuit diagram network or with the layout network. A first electrical moment is calculated for the transmission path of the layout. A second moment of the corresponding transmission path of the circuit diagram is calculated. A relationship between the first moment and the second moment is predetermined. A value of a resistor or a value of the capacitor of the circuit diagram is now modified in such a way that the relationship is satisfied.

Abstract: The current source can be switched between a current-controlled mode and a voltage-controlled mode. A special type of drive to the current source has the result that it operates correctly and in a stable manner under all circumstances with only two input connections.

Abstract: A circuit configuration for driving a load is described. The circuit configuration has a first and a second connecting terminal for connecting the load, a first drive input for applying a first drive signal, and a first semiconductor switching element having a first load terminal connected to the first connecting terminal, a second load terminal connected to the second connecting terminal and a drive terminal coupled to the drive input. A voltage limiting circuit is provided and is connected between the first load terminal and the drive terminal of the first semiconductor switching element.

Abstract: A method of attaching semiconductor devices, the contact devices of which have preferably already been applied at wafer level, on a switching device and such a device includes having the electrical contacts remain free of solder by using flexible contact elements, and performing the mechanical attachment by additional attachment elements or compression stops used as attachment elements.

Abstract: The membrane mask is based on an SOI substrate. In an existing or subsequently produced multilayer semiconductor/insulator/semiconductor-carrier-layer substrate, the inhomogeneous mechanical stresses in the semiconductor layer, which lead to undesirable distortions, are converted at least partly into a homogenous state prior to the structuring of the semiconductor layer. In order to accomplish this, either an additional layer structure is provided on an existing SOI substrate, or a modified layer structure is provided in the fabrication of the SOI substrate, or both.

Abstract: A method for functional testing of a transmission and reception path includes transmitting a first signal at a first transmission power level to a radio station and determining a first reception strength, with a base station. A first difference value is subsequently calculated. The radio station transmits a second signal at a second transmission power level to the base station, determines a second reception strength, and calculates a second difference value. Any difference between the difference values is then compared with a threshold value, and a function of a transmission and reception path is derived from the comparison. A base station of a radio communications system is also provided.

Abstract: A reflective membrane mask is composed at least partially of an electrically conductive material and is aligned horizontally over a sample to be processed. Bending of the reflective membrane mask is compensated for by disposing an electrode plate above the membrane mask and parallel to it, which electrode plate is provided with a number of electrodes that are electrically isolated from one another. Electrostatic forces, that correct for any deformation of the membrane mask, are produced by applying an electrical potential difference between each electrode and the membrane mask.

Abstract: First, the inking behavior of the printing units of a multicolor rotary printing machine is determined by means of test forms. The inking nonuniformities on the test forms are transmitted to the pre-press stage. Using the data about the inking nonuniformities of the test forms, the raster tonal values of the color separations of a printing form are modified in such a way that the inking nonuniformities are compensated locally on the basis of the location of their occurrence in the print on the printing forms or films.

Abstract: In order to test, in parallel, semiconductor chips formed on a wafer, functionally identical contact points of the semiconductor chips are connected to column lines, and the rows of the semiconductor chips are selected by selection signal lines. This method is suitable in particular for checking electrically conductive connections between contact points of the semiconductor chips and mating contacts of a test head.

Abstract: Cavities of submicron dimension are in a cavity layer of a semiconductor device. For that purpose, processing material is deposited on ridges of a working layer that is structured from ridges and trenches. The processing material is polymerized and the polymerizing processing material expands over the trenches. Upon covering the trenches, the submicron cavities are formed.

Abstract: For particularly simple and targeted formations of a diffusion region, an interfacial region of a semiconductor substrate is subjected to a thermal transformation process and thereby carry out the thermally activated diffusion of a dopant in a substantially directed form, in particular in substantially a preferential direction, by interaction of a provided dopant with a transforming interfacial region.

Abstract: A method and a solution are provided for cleaning a container, in particular a boiler of a conventional power station. The container is degreased and pickled in one method step using an alkaline cleaning solution. A suitable cleaning solution includes, for example, an ammonium EDTA salt, hydrazine and a surfactant.

Abstract: A sheet-braking system and method of operation for a delivery of a sheet-processing machine, includes a braking belt revolving during operation and undergoing periodic decelerating and accelerating phases. The braking belt further includes a braking strand passable over a suction region providing a suction effect passing through the braking strand. The suction region is overlapped throughout the duration of a respective decelerating phase, by a respective sheet deposited on the braking strand.

Abstract: A processor device includes a clock generation unit, a processor unit, a main memory, a processor bus, and also a bus control device having an interface for a crossover bus to at least one further processor device. The bus control device monitors processor device data access through the processor bus, interchanges signals concerning data access through the crossover bus, evaluates them and outputs an error signal based on the evaluation result. In a processor system including at least two processor devices connected to one another through the crossover bus, the processor units are started in synchronism. The bus control devices in the processor devices interchange signals through the crossover bus upon each data access operation by the processor units, and output an error signal if there is no correspondence. If there is an error in one processor device, operation of the processor system is continued on the other processor device or devices.

Abstract: A method and a device for measuring a phase shift between a periodic signal and an output signal at an output of an electronic component. A supply voltage potential is applied to a electronic component, whereby the periodic signal is applied to the output of the electronic component. The current through the supply voltage input is measured, whereby a magnitude of the current corresponds to a phase shift between the periodic signal and the output signal.

Abstract: A mask contains a transparent carrier material on which an opaque region is disposed as an image structure. Also disposed on the carrier material is a semitransparent dummy structure, which is spaced apart from all the image structures and differs from the image structure in terms of transparency and phase rotation. The smallest lateral extent of the dummy structure is then selected to be at least half as large as the smallest lateral extent of the image structure. The semitransparent dummy structure is formed in such a way that it is suitable for increasing the depth of focus of structures that stand individually or at least partially individually, in order thereby to improve the process window of the optical projection.

Abstract: A charge pump configuration for matching a charge pump to prevailing conditions is described. The charge pump configuration according to the invention has a charge pump having a plurality of interconnected pump stages, with at least one respective pump capacitor, and a closed-loop control device. The closed-loop control device is configured such that it bridges or turns off at least one of the pump stages on the basis of the conditions that are to be taken into account. The pump stages needed by the charge pump configuration are optimally chosen for the present operating point on a basis of input and output voltages and currents, which allows the efficiency of the charge pump configuration to be set in optimum fashion.

Abstract: A semiconductor configuration for current control has an n-type first semiconductor region with a first surface, a p-type covered island region, within the first semiconductor region, with a second surface, an n-type contact region arranged on the second surface within the island region and a lateral channel region, formed between the first and second surface as part of the first semiconductor region. The channel is part of a current path from or to the contact region. The current within the lateral channel region may be influenced by at least one depletion zone. A lateral edge of the lateral channel region extends as far as the contact region.