Abstract: A semiconductor component includes a first layer and at least one adjacent semiconductor layer or metallic layer, which forms a rectifying junction with the first layer. Further semiconductor layers and metallic layers are provided for contacting the component. Insulating or semi-insulating structures are introduced into the first layer in a plane parallel to the rectifying junction. These structures are shaped like dishes with their edges bent up towards the rectifying junction. A method of producing such a semiconductor component is also provided.

Abstract: A hard metal grade powder is produced from hard material, metal binder, and non-water-soluble pressing aid components, by forming a slurry containing the components and pure water as a liquid phase and then drying the slurry. Here, the hard material and metal binder components are first milled in water, to form a slurry. Then the pressing aid components are added to the slurry in the form of an emulsion produced with the aid of an emulsifier with the addition of water.

Abstract: A radio-frequency input stage is specified and has a radio-frequency coupling element which couples an air interface to the inputs of parallel-connected radio-frequency resonant circuits. In order to allow a circuit configuration which has no switches and is of simple construction, only one capacitance, which forms a low-pass filter, is provided in the coupling element, and splits an antenna signal between the various bands, in the process suppressing influences from bands other than that which has been selected. The radio-frequency input stage can be used, for example, in three-band TV tuners.

Abstract: An integrated memory comprises a memory cell array with memory cells and a connection area for externally tapping data of the memory cells which are to be read out. The memory is operated using a prefetch architecture, in which, when there is a memory access operation, a first data group of memory cells from a first zone and a second data group of further memory cells from a second zone of the memory cell array are fed in parallel to an output circuit and the first and second data groups are output successively via the connection area. The first and second zones are always defined for a plurality of memory access operations in such a way that the first data group has a shorter signal transit time to the connection area than the second data group. As a result, the external outputting of data can be brought forward in time, and the operating frequency can thus be increased.

Abstract: A method for fabricating a trench capacitor for a semiconductor memory includes forming a masking layer in a trench that is disposed in a substrate. Nanocrystallites, which are used to pattern the masking layer, are deposited on the masking layer. Microtrenches are etched into the substrate in a lower region of the trench by the patterned masking layer. The microtrenches form a roughened trench sidewall. As a result, the outer capacitor electrode is formed with a larger surface area, allowing the trench capacitor to have a higher capacitance.

Abstract: A semiconductor module includes a housing with at least one semiconductor component that is conductively connected to at least one output line. An integrated temperature sensor is also housed in the housing. This sensor is connected, via at least one of its load terminals, to a terminal for receiving a supply potential. The temperature sensor conducts a load current that heats-up the temperature sensor when a first temperature threshold is crossed and a supply potential is in being supplied. A housed interruption device is arranged in such a way that it interrupts the output lines carrying the load current when a second temperature threshold has been exceeded.

Abstract: A method for generating a control signal after a predeterminable period of time is described. The method includes applying a voltage to an inductor at a beginning of a time measurement; and outputting, via a current threshold value detector, the control signal if a current through the inductor exceeds a predeterminable threshold value. The invention also relates to a timing circuit.

Abstract: A plug-in connector for an electrical device has a plastic member which includes a material that has conductive properties at voltages above a given working voltage range and has insulating properties at voltages in the given working voltage range. Contact pins are embedded in the plastic member. The voltage-dependent conductivity protects the electrical device against electrostatic discharges.

Abstract: A photoresist layer on a substrate wafer is exposed in first sections with a first exposure radiation and in second sections with a second exposure radiation that is phase-shifted by 180°. The first and second sections adjoin one another in boundary regions in which the photoresist layer is artificially not sufficiently exposed. Where a distance between these boundary regions is smaller than a photolithographically critical, least distance, the photoresist layer is exposed, at a first boundary region, with a third exposure radiation and at a second boundary region with a fourth exposure radiation phase-shifted by 180°. A trim mask provided for the process has a first translucent region and a second translucent region. The first light-transparent region and the second light-transparent region are fashioned such that the light passing through the first light-transparent region and the light passing through the second light-transparent region has a phase displacement of 180°.

Abstract: An integrated dynamic memory includes a memory cell array having memory cells for storing a charge corresponding to an information bit. The memory cell array has a regular cell area with regular memory cells, a first test cell area with first test cells and a second test cell area with second test cells. A control unit is provided for refreshing the charge contents of the regular memory cells with a first refresh time, a control unit is provided for refreshing the charge contents of the first test cells with a second refresh time, and the charge contents of the second test cells with a third refresh time. The first refresh time is shorter than the second refresh time and the latter is shorter than the third refresh time. An evaluation unit is provided for detecting memory cell defects in the first and second test cell areas.

Abstract: An electro-optical module includes a connector and a module body having an electro-optical converter. The connector accommodates one end of a fiber optic waveguide segment and aligns it with the optical connector interface at the side of the module body. The connector interface is provided at the top side of the module body.

Abstract: An aerial cableway system has at least one load-bearing and conveying cable that is moved between a valley station and a mountain station, which is guided over deflection pulleys in the stations, and transportation devices that can be coupled to the load-bearing and conveying cable and that are formed by cabins and by chairs. The cabins and chairs can be uncoupled from the conveying cable in the stations, moved along guide rails through entry and exit regions located in the stations, and then once more coupled to the conveying cable. The entry and exit regions provided in the stations are respectively subdivided into two mutually separate sectors which follow each other in the direction of movement. A first sector is intended for the users of the cabins and a second sector is provided for the users of the chairs.

Abstract: A method for structuring ferroelectric layers on semiconductor substrates retains or regenerates the adherence and breakdown voltage resistance of the ferroelectric layer, which is especially significant for producing storage capacitors in large-scale integrated FeRAM and DRAM memory components. The addition of H2O or O2 results principally in the recovery of the electrostatic breakdown strength of the ferroelectric layer, which is of importance in particular when the ferroelectric serves as a dielectric of a storage capacitor and has to withstand electric fields of 5-10×106 V/m without a significant leakage current.

Abstract: A method for protecting a SiO2 coating on defining surfaces of a combustion chamber and a combustion device containing the protection. Accordingly, an additive is introduced into the combustion chamber, which increases the SiO content of the exhaust gas, arising from a combustion process. The SiO content helps protect walls of the combustion chamber formed with the SiO2 coating.

Abstract: An integrated memory having a memory cell array has a control circuit for controlling a memory access for reading out or writing a data signal of one of the memory cells. The control circuit receives, for a memory access, an access command in the form of an activation command, a read command or a write command. Furthermore, the control circuit is designed and can be operated in such a way that, for a memory access, a configuration value for a CAS latency and/or a configuration value for specifying a burst access is received in a combined manner with the access command. As a result, a mode register and a corresponding programming step for programming the register can be eliminated.

Abstract: An output driver circuit includes a delay device disposed between a signal input and a driver device. The input signal to the driver device can be delayed by a predetermined value with the delay device. The signal amplitude of the output signal from the driver device is compared, in a comparison device, with the signal amplitude of a reference signal at a predetermined time. The time delay for the input signal to the driver device is then set on the basis of the comparison result. A method for adjusting a driver device is also provided.

Abstract: A method is provided for generating a data strobe signal in order to transmit the latter through a signal line with tristate behavior from/to a semiconductor memory module for writing/reading data to/from the semiconductor module. The data strobe signal, in response to the outputting or the reception of a read/write command, proceeding from the tristate state, is clocked with a predetermined clock frequency after a short preamble period. The data strobe signal is occupied, in the preamble period, by one or more pulses corresponding to the clock frequency. In very fast memory systems, this avoids a temporal offset between a system clock and data acceptance controlled by data strobe signal pulses. A semiconductor circuit configuration having a semiconductor circuit module with a circuit for generating such a data strobe signal, is also provided.

Abstract: The present invention relates to a method for maintaining a time reference which is governed by a high clock frequency produced by a first clock frequency generator, in which a changeover is essentially made, for a changeover time period, to a low clock frequency produced by a second clock frequency generator. The apparatus of the invention maintains the time reference governed by the high clock frequency, wherein a changeover is made to the low clock frequency for a specific changeover time period. The invention is advantageously used to save power in electronic apparatus such as in mobile stations of mobile radio systems.

Abstract: With a work device that holds to a surface by vacuum pressure and can move on the surface to perform jobs and is connected to a base station through a supply line, there exists a danger that the work device will fall if the attractive force (vacuum pressure) weakens. To prevent such danger, the work device is connected to the base station through a safety line, with which it is possible to stop the fall of work device. As such, the work device can also be utilized in locations where it could fall from a great height in the event of failure, for instance, on the outside of buildings.