Abstract: This invention is related to methods for the immobilization of labeled ligands on solid surfaces using soft metal-soft base bonding. The ligand-binding solid surface comprises a soft metal solid support and a heterobifunctional spacer chemi- or physisorbed to said soft metal solid support via soft metal-soft base bonding.

Abstract: Resistance-repellent and multidrug resistant retroviral protease inhibitors are provided. Pharmaceutical composition comprising such compounds, and methods of using such compounds to treat HIV infections in mammals, are also provided.

Abstract: The present invention discloses a nano tube cell, and a semiconductor device having the nano tube cell and a double bit line sensing structure. The cell array circuit includes a plurality of top sub cell arrays, a plurality of bottom sub cell arrays, a main bit line sense amp and a word line driving unit. Especially, the top and bottom sub cell arrays have a double bit line sensing structure for inducing a sensing voltage of a main bit line by controlling a volume of a current supplied from a power voltage to the main bit line according to a sensing voltage of a sub bit line receiving a cell data. Each of the sub cell arrays includes a capacitor, and a PNPN nano tube cell having a PNPN diode switch selectively turned on/off according to a voltage difference between one side terminal of the capacitor and the sub bit line, to decrease a cell size and improve operational characteristics of the circuit.

Abstract: A piezoelectric flexural sensing structure having increased sensitivity and decreased noise, without sacrifice of the sensor bandwidth. The structure is made up of a proof mass, a beam with a base and optionally having castellated bonding surfaces and two <011> poled bonding mode PMN-PT crystal plates mounted on the beam.

Abstract: Compounds of the formula (I) or (II) and their pharmaceutically acceptable salts are ligands at gastrin and/or chole-cystokinin receptors n is from 1 to 4; R4 is C1 to C15 hydrocarbyl wherein up to two C atoms may optionally be replaced by N, O and/or S atoms and up to three H atoms may optionally be replaced by halogen atoms; Z is —(NR5)a—CO—(NR6)b-(wherein a is 0 or 1, b is 0 or 1, and R5 and R6 are independently selected from H, Me, Et, Pr, Bn), —CO—NR5—CH2—CO—NR6—, —CO—O—, —CH2—CH2—, —CH?CH—, CH2—NR6— or a bond; Q is R7V, or(a) wherein R7 is —CH2—; —CH2—; or(b) R7 and R6, together with the nitrogen atom to which R6 is attached, form a piperidine or pyrrolidine ring which is substituted by V; V is —CO—NH—SO2-Ph, —SO2—NH—CO-Ph, CH2OH, or a group of the formula —R8U, (wherein U is —COOH, tetrazolyl, —CONHOH— or —SO3H; and R8 is a bond; C1 to C6 hydrocarbylene, optionally substituted by hydroxy, amino or acetamino; —O—(C1 to C3 alkylene)-; —SO2NR9—CHR10—; —CO—NR9—CHR10—, R9 and R10 being independently se

Abstract: A differential-type dry pipe valve for a fire protection sprinkler system has a ratio of effective air sealing area to service water sealing area that is smaller than a ratio of service water pressure to system air pressure at which the fire protection sprinkler system is actuated.

Abstract: A test mode circuit of a semiconductor memory device features a test mode controller, a test mode decoder and a test mode item selecting means. The test mode controller outputs a test mode setting signal to control a test mode setting operation in response to a register set signal and address signals which are used in setting a test mode. The test mode decoder, which is controlled by the test mode setting signal, selects a test mode item group in response to upper address bits of the address signal. The particular test mode is then selected from the test mode group in response to lower address bits of the address signal. Accordingly, the number of metal lines used in a test mode circuit can be reduced.

Abstract: The present invention is a substantially purified sortase-transamidase enzyme from Gram-positive bacteria, such as Staphylococcus aureus. A specific sortase-transamidase enzyme disclosed has a molecular weight of about 29,076 daltons and catalyzes a reaction that covalently cross-links the carboxyl terminus of a protein having a sorting signal to the peptidoglycan of a Gram-positive bacterium, where the sorting signal has a a motif of NPQ/KTN/G therein. Variants of the enzyme, methods for cloning the gene encoding the enzyme and expressing the cloned gene, and methods of use of the enzyme, including for screening for antibiotics and for display of proteins or peptides on the surfaces of Gram-positive bacteria, are also disclosed.

Abstract: Wnt-1-Induced Secreted Proteins (WISPs) are provided, whose genes are induced at least by Wnt-1. Also provided are nucleic acid molecules encoding those polypeptides, as well as vectors and host cells comprising those nucleic acid sequences, chimeric polypeptide molecules comprising the polypeptides fused to heterologous polypeptide sequences, antibodies which bind to the polypeptides, and methods for producing the polypeptides.

Abstract: A tissue connecting device is provided. The device comprise an elongate delivery device having a lumen, a proximal end, and a distal end. The distal end is configured to engage tissue and advance said device into tissue. At least one anchor deliverable through a lumen of the elongate delivery device. The distal end of the device may be designed to engage tissue upon rotation of the device about its longitudinal axis.

Abstract: A method for conductive line of semiconductor device is disclosed. A cobalt silicide layer is formed on an impurity junction region exposed through a contact hole. The cobalt silicide layer stabilizes a contact resistance so that the contact resistance of the impurity junction region does not vary in subsequent thermal processes.

Abstract: The present invention is directed to novel polypeptides and to nucleic acid molecules encoding those polypeptides. Also provided herein are vectors and host cells comprising those nucleic acid sequences, chimeric polypeptide molecules comprising the polypeptides of the present invention fused to heterologous polypeptide sequences, antibodies which bind to the polypeptides of the present invention and to methods for producing the polypeptides of the present invention.

Abstract: The application concerns methods of treatment using anti-ErbB receptor antibody-maytansinoid conjugates, and articles of manufacture suitable for use in such methods. In particular, the invention concerns ErbB receptor-directed cancer therapies, using anri-ErbB receptor antibody-maytansinoid conjugates.

Abstract: A method and apparatus for making an inner conductor from a conductive body integrally forms a flange on one end of the conductive body. The flange is formed integral to the conductive body by flaring the end of the conductive body. The size and shape of the flange is selected to achieve a desired capacitance surface area for use in a resonator. A resonator housing that has a plurality of cavities can be provided with a plurality of conductive bodies that are inserted into holes located in a bottom wall of the resonator body and that protrude into the plurality of cavities. The resonator housing and conductive bodies are placed onto a flanging fixture to produce a flange on each conductive body of a desired size and shape to achieve a desired capacitance surface area. The plurality of conductive bodies can be simultaneously flanged and fastened to the base of the resonator housing.

Abstract: A semiconductor memory device processes external commands in parallel using divided clocks, which embodies a high-speed operation of a DRAM in increase of clock frequency. In the semiconductor memory device, command processing blocks are separated into row and column paths in parallel, and the command processing blocks connected in parallel are sequentially latched by clocks obtained by dividing input clocks applied externally, thereby improving the operation speed of the DRAM at high operation and reducing power consumption.

Abstract: A nonvolatile ferroelectric memory device having a power control function improves a sensing margin by stably controlling a power applied to a cell capacitor. In the nonvolatile ferroelectric memory device, an operating voltage of the cell is controlled depending on an external supply voltage in order to apply the highest voltage to the cell capacitor, and a power voltage obtained by dropping an external power voltage is applied to adjacent circuits in order to apply a lower voltage to adjacent circuits. Additionally, different ESD (Electro Static Discharge) circuits for performing an electrostatic discharge function in an input/output unit are embodied depending on the supplied voltage level, thereby stabilizing power.

Abstract: A technique is provided for determining ownership interest allocation for a business, wherein transactions of contributors with the business are grouped into contributor transaction classes (CTCs), and a contribution value is calculated for the contributor transactions in each CTC to indicate the contribution of each transaction to the value of the business, using one or more performance metrics for each CTC, and lastly, at least one ownership interest award rule for a contributor is determined, based on the calculated contribution values for the CTCs. The technique can be performed with a digital computer and can provide real-time dynamic measures of ownership interest allocation.

Abstract: The present invention discloses a magnetoresistive random access memory (MRAM) and a manufacturing method thereof. The whole cells are connected to each other by using a substrate as a ground terminal and a vertical structure field effect transistor (FET) for connecting the cells to the bit line. Thus, the MRAM is easily manufactured without requiring a special process for isolation of each cell. The MRAM uses the vertical structure FET to simplify the whole manufacturing process. An MTJ cell mask process which is essential in a general horizontal structure FET is omitted, to improve a speed of the MRAM and attain high integration of the MRAM.

Abstract: A voltage generator with reduced noise features a detector, a controller, a sub-booster, a main booster and a voltage adder. The detector receives an output voltage, a first reference voltage and a second reference voltage lower than the first reference voltage, and then outputs a first sensing signal and a second sensing signal. The controller receives the first sensing signal and the second sensing signal and an action signal to output a first control signal and a second control signal. The sub-booster boosts a voltage in response of the first control signal. The main booster boosts a voltage in response to the second control signal. The voltage adder adds output signals from the sub-booster and main booster, to provide the output voltage.

Abstract: A multi-dimensional image data enhancement system is configured to reduce the effect of blanking areas on the large kernel processing of pixel data. Thus, when pixels comprising blanking data are processed, additional blanking data can be added to the blanking data such that the additional “fictional blanking data” will occupy an area within the kernel size instead of image data in an adjacent frame or non-related areas of the current frame.