Patents Represented by Attorney J. Vincent Tortolano
  • Patent number: 6917105
    Abstract: Wafer-level chip-scale packaging technology is used for improving performance or reducing size of integrated circuits by using metallization of pad-to-bump-out beams as part of the integrated circuit structure. Chip-scale packaging under bump metal is routed to increase the thickness of top metal of the integrated circuit, increasing current carrying capability and reducing resistance. An exemplary embodiment for a power MOSFET array integrated structure is described.
    Type: Grant
    Filed: June 3, 2003
    Date of Patent: July 12, 2005
    Assignee: Micrel, Incorporated
    Inventor: Martin Alter
  • Patent number: 6900538
    Abstract: Wafer-level chip-scale packaging technology is used for improving performance or reducing size of integrated circuits by using metallization of pad-to-bump-out beams as part of the integrated circuit structure. Chip-scale packaging under bump metal is routed to increase the thickness of top metal of the integrated circuit, increasing current carrying capability and reducing resistance. An exemplary embodiment for a power MOSFET array integrated structure is described. Another exemplary embodiment illustrated the use of chip-scale processes for interconnecting discrete integrated circuits.
    Type: Grant
    Filed: January 20, 2004
    Date of Patent: May 31, 2005
    Assignee: Micrel, Inc.
    Inventors: Martin Alter, Robert Rumsey
  • Patent number: 6818950
    Abstract: In cellular MOSFET transistor arrays using a geometric gate construction, deleterious inherent capacitance induced by the construction is substantially reduced by the use of plugs in between adjacent source regions of transistor source rows and adjacent drain regions of transistor drain rows of the array. Embodiments using field oxide, thicker step gate oxide, dielectric materials in a floating gate construction, and shallow trench isolation region plugs are described.
    Type: Grant
    Filed: May 13, 2003
    Date of Patent: November 16, 2004
    Assignee: Micrel, Inc.
    Inventor: Shekar Mallikarjunaswamy
  • Patent number: 6093946
    Abstract: An improved EEPROM cell having a field-edgeless tunnel window is provided which is fabricated by a STI process so as to produce reliable endurance and data retention. The EEPROM cell includes a floating gate, a programmable junction region, and a tunneling oxide layer separating the programmable junction region and the floating gate. The tunneling oxide layer defines a tunnel window which allows for programming and erasing of the floating gate by tunneling electrons therethrough. The programmable junction region has a width dimension and a length dimension so as to define a first area. The tunnel window has a width dimension and a length dimension so as to define a second area. The second area of the tunnel window is completely confined within the first area of the programmable junction region so as to form a field-edgeless tunnel window.
    Type: Grant
    Filed: February 20, 1998
    Date of Patent: July 25, 2000
    Assignee: Vantis Corporation
    Inventors: Xiao-Yu Li, Sunil D. Mehta
  • Patent number: 6087696
    Abstract: An improved EEPROM cell structure and a method of fabricating the same is provided so as to improve data retention. The EEPROM cell includes a stacked dielectric structure consisting of a thin tunnel oxide layer and a high-k dielectric layer to function as the tunneling dielectric barrier so as to suppress leakage current.
    Type: Grant
    Filed: May 28, 1998
    Date of Patent: July 11, 2000
    Assignee: Lattice Semiconductor Corp.
    Inventors: Xiao-Yu Li, Qi Xiang, Sunil D. Mehta
  • Patent number: 6064105
    Abstract: A shallow trench isolation structure and a method for forming the same for use with non-volatile memory devices is provided so as to maintain sufficient data retention thereof. An epitaxial layer is formed on a top surface of a semiconductor substrate. A barrier oxide layer is formed on a top surface of the epitaxial layer. A nitride layer is deposited on a top surface of the barrier oxide layer. Trenches are formed through the epitaxial layer and the barrier oxide layer to a depth greater than 4000 .ANG. below the surface of the epitaxial layer so as to create isolation regions in order to electrically isolate active regions in the epitaxial layer. A liner oxide is formed on sidewalls and bottom of the trenches to a thickness between 750 .ANG. to 1500 .ANG.. As a result, leakage current in the sidewalls are prevented due to less thinning of the liner oxide layer by subsequent fabrication process steps.
    Type: Grant
    Filed: August 14, 1998
    Date of Patent: May 16, 2000
    Assignee: Vantis Corporation
    Inventors: Xiao-Yu Li, Radu Barsan, Sunil D. Mehta
  • Patent number: 4878166
    Abstract: Methods and apparatus are disclosed for transferring data to and from a first bus, to which a first set of high performance devices, including at least one central processing unit ("CPU") is attached, and a second bus, to which a second set of relatively lower performance devices is attached. More particularly the invention accomplishes the transfer function in a manner that facilitates communication between the first and second set of devices from the comparatively lower performance of the second set of devices. Direct memory access ("DMA") apparatus and methods are disclosed, including a set of direct memory access channels. The DMA channels may be used to transfer data between the high performance channel (hereinafter referred to as the "Local Bus") coupled to the CPU in a reduced instruction set computer (RISC) system and a typically lower performance, peripheral bus (hereinafter referred to as a "Remote Bus").
    Type: Grant
    Filed: December 15, 1987
    Date of Patent: October 31, 1989
    Assignee: Advanced Micro Devices, Inc.
    Inventors: William M. Johnson, Timothy A. Olson, Drew J. Dutton, Sherman Lee, David W. Stoenner
  • Patent number: 4811345
    Abstract: Methods and apparatus are disclosed that facilitate the testing and development of computer systems that include at least one single chip microprocessor. In particular, a parallel test interface is described that allows an external test unit to (1) directly load instructions into the microprocessor under test utilizing the existing bus structure of the computer system; (2) step the processor through preselected test instruction sequences; (3) monitor processor states in both the processor's test and normal execution modes; and (4) halt and resume normal instruction processing. According to the invention, the microprocessor test interface comprises a plurality of dedicated CPU status output pins and a plurality of dedicated CPU control input pins, used by the test unit in combination with the existing bus structure of the computer system to provide the desired test facility for the single chip microprocessor.
    Type: Grant
    Filed: December 16, 1986
    Date of Patent: March 7, 1989
    Assignee: Advanced Micro Devices, Inc.
    Inventor: William M. Johnson
  • Patent number: 4803176
    Abstract: An improved integrated circuit structure is disclosed in which an active device is formed in contiguous portions of a single slot in an integrated circuit structure or substrate. The method of forming the single slot or merged slot device comprises forming a first portion of the slot, constructing at least a part of one element of the active device in this slot portion, and then forming one or more additional slot portions contiguous with the first slot portion, and constructing one or more further elements of the same active device in the additional contiguous slot portion or portions.
    Type: Grant
    Filed: August 18, 1986
    Date of Patent: February 7, 1989
    Assignee: Advanced Micro Devices, Inc.
    Inventor: Robert W. Bower
  • Patent number: 4787095
    Abstract: A preamble search and synchronizer circuit for detecting a preamble pattern within data input signals and synchronizing it with a clock signal associated with a StarLAN coded data transceiver includes a synchronizer start circuit, a counter circuit, and a pattern detector circuit. The synchronizer start circuit is responsive to the complement of the data input signals and the clock signal for generating a start signal which is synchronized with the clock signal. The counter circuit is responsive to the start signal and the complement of the clock signal for generating a gated clock signal. The pattern detector circuit is responsive to the start signal, the data input signals and the gated clock signal for sampling of the data input signals and for generating a synchronized output signal upon detection of a predetermined data sequence indicative of the preamble pattern.
    Type: Grant
    Filed: March 3, 1987
    Date of Patent: November 22, 1988
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Leslie Forth, Raymond S. Duley
  • Patent number: 4777588
    Abstract: A high speed register file for use by an instruction processor suitable for reduced instruction-set computers (RISCs) is disclosed which is preferably used with an efficient register allocation method. The register file facilitates the passing of parameters between procedures by dynamically providing overlapping registers which are accessible to both procedures. Each procedure also has a set of "local" registers assigned to it which are inaccessible from other procedures. The register file is divided into a number of blocks and a protection register stores a word which proscribes access by a particular procedure or task to certain blocks. In this manner, an instruction processor using the register file can operate on multiple tasks maintaining the integrity of each from undesired changes occuring in the others.
    Type: Grant
    Filed: August 30, 1985
    Date of Patent: October 11, 1988
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Brian W. Case, Rod G. Fleck, William M. Johnson, Cheng-Gang Kong, Ole Moller
  • Patent number: 4777389
    Abstract: An output buffer includes a pull-up transistor (N1), a first pull-down transistor (N3), a second pull-down transistor (N8), and a logic circuit (15). The logic circuit (15) is responsive to a data input signal making a high-to-low transition and the output signal making a high-to-low transition for maintaining the second pull-down transistor (N8) turned-off until after an output node has made the high-to-low transition, thereby reducing significantly the ground bounce noise.
    Type: Grant
    Filed: August 13, 1987
    Date of Patent: October 11, 1988
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Bor-Tay Wu, Wayne W. Yip Wong
  • Patent number: 4777587
    Abstract: An instruction processor suitable for use in a reduced instruction-set computer employs an instruction pipeline which performs conditional branching in a single processor cycle. The processor treats a branch condition as a normal instruction operand rather than a special case within a separate condition code register. The condition bit and the branch target address determine which instruction is to be fetched, the branch not taking effect until the next-following instruction is executed. In this manner, no replacement of the instruction which physically follows the branch instruction in the pipeline need be made, and the branch occurs within the single cycle of the pipeline allocated to it. A simple circuit implements this delayed-branch method. A computer incorporating the processor readily executes special-handling techniques for calls on subroutine, interrupts and traps.
    Type: Grant
    Filed: August 30, 1985
    Date of Patent: October 11, 1988
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Brian W. Case, Rod G. Fleck, Cheng-Gang Kong, Ole Moller
  • Patent number: 4774197
    Abstract: A method of improving the integrity of silicon dioxide is disclosed. As applicable, for example, to the formation of oxide regions in an integrated circuit (such as thin, gate oxides) an implantation of nitrogen ions is performed prior to high temperature processing steps of the circuit fabrication. High temperature steps then result in silicon-nitrogen compounds being formed at the interfaces of the silicon dioxide regions with subjacent and superjacent regions of the integrated circuit structure. These compounds prevent the incursion of impurities into the silicon dioxide which would degrade its quality.
    Type: Grant
    Filed: June 17, 1986
    Date of Patent: September 27, 1988
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Sameer S. Haddad, Mong-Song Liang
  • Patent number: 4773044
    Abstract: An array-word-organized memory system comprising a plurality of columns and rows of memory chips, an address bus routed through all of the memory chips, a plurality of selectable CAS lines wherein one of the CAS lines is routed through each one of said plurality of columns of memory chips and a plurality of selectable RAS lines wherein one of the RAS lines is routed through each one of said plurality of rows of memory chips. In operation, selected X and Y addresses are applied to the memory chips together with the strobing of selected ones of the CAS and RAS lines during four sequential time periods for addressing arbitrary arrays of pixels stored in the memory chips.
    Type: Grant
    Filed: November 21, 1986
    Date of Patent: September 20, 1988
    Assignee: Advanced Micro Devices, Inc
    Inventors: Adrian Sfarti, Randy Goettsch
  • Patent number: 4771264
    Abstract: Method of detecting the INFO 1 signal pattern which avoids false activation of a data transmission line caused by noise on the line. An initial line sampling rate four times the nominal 192 kbs line rate is used to detect a HIGH mark to avoid the difficulties resulting from sampling right at the edge of a mark. Subsequent sampling is done at the nominal line rate to detect two opposite polarity marks out of every consecutive eight-bit time periods. If six consecutive eight-bit time periods are detected, each having its HIGH and LOW marks in the same relative positions, the line is activated. The method is readily implemented as a set of three "state machines" and consequently can be constructed from programmable logic arrays.
    Type: Grant
    Filed: July 28, 1986
    Date of Patent: September 13, 1988
    Assignee: Advanced Micro Devices, Inc.
    Inventor: Brian A. Childers
  • Patent number: 4771418
    Abstract: For each channel, a pair of buffers permits "non-slip" transfer of data signals on and off a bus synchronized with signals on a time-division multiplexed pulse-code modulation (PCM) highway. A source buffer consisting of a serial-in, parallel-out register and two parallel-in, parallel-out registers receives signals from one of the PCM channels and transmits these signals onto a bus synchronized with a data-routing multiplexer employed within a digital exchange controller employing the device. A destination buffer consisting of two parallel-in, parallel-out registers and a parallel-in, serial-out register receives signal from the bus and, in conjunction with a transmit multiplexer, generates the signals on the PCM highway.
    Type: Grant
    Filed: July 28, 1986
    Date of Patent: September 13, 1988
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Subramanian Narasimhan, Ronald Laugesen
  • Patent number: 4766397
    Abstract: Disclosed is an improved phase detector apparatus which includes a charge pump. The charge pump includes a first integrating node and a second integrating node. The first and second integrating nodes generate node voltages which ramp downward and upward during a given period of a reference signal. When a signal is received to which a reference signal is to be locked on, the integrating sequence of the first and second nodes is altered so that the differential voltage across the nodes indicates a difference in phase between the reference signal and the second signal. A filter is connected between the output signal and the first integrating node, while the second integrating node is referenced to a DC bias level and returns to that level at the beginning and end of each cycle. The charge pump apparatus is driven by variable current sources which give the apparatus a variable frequency response.
    Type: Grant
    Filed: May 5, 1987
    Date of Patent: August 23, 1988
    Assignee: Advanced Micro Devices, Inc.
    Inventor: Neil R. Adams
  • Patent number: 4764887
    Abstract: An arithmetic logic circuit comprising a plurality of cells of conventional logic circuits for performing logical and arithmetic operations in combination with a kill circuit in each one of the cells which is responsive to bits of first and second operands T and B, a clock signal .0.1*, a propagate bit P and a carry-in bit C.sub.in for selectively providing a carry-out bit C.sub.out and/or a carry-bypass circuit coupled to each one of a plurality of sets of cells which is responsive to propagate bits P from said cells in each set, a clock signal .0.2* and a carry-in bit C.sub.in for allowing said carry-in bit C.sub.in to bypass selected ones of the cells.
    Type: Grant
    Filed: August 2, 1985
    Date of Patent: August 16, 1988
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Chingwei S. Lai, Florence S. Lee
  • Patent number: 4761567
    Abstract: An integrated circuit includes an input clock generator circuit responsive to an external TTL level clock signal for generating an internal CMOS level system clock signal for its own use and for use by other integrated circuits. The integrated circuit also includes an internal clock generator circuit responsive to either the internal CMOS level system clock signal or an external CMOS level system clock signal for generating internal CMOS level phase clock signals for its own use. As a result, the integrated circuit has a higher speed of operation since the propagation delay between the CMOS level system clock signal and internal clock signals has been minimized.
    Type: Grant
    Filed: May 20, 1987
    Date of Patent: August 2, 1988
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Donald M. Walters, Jr., Gigy Baror