Abstract: In a charge transfer transversal filter a substrate of one conductivity type semiconductor material is provided. A plurality of electrodes insulatingly overlie the substrate and form therewith a plurality of stages of a charge transfer shift register. One electrode of each of the stages is split into a first and a second part with a small gap therebetween. A region of opposite conductivity type is provided in the substrate underlying each of the gaps to electrically couple the pair of storage regions underlying each of the one electrodes. A first clock line is connected to the first parts of the one electrodes. A second clock line is connected to the second parts of the one electrodes. Means are provided for applying phase related voltage to each of the stages of the shift register to effect transfer of charge from stage to stage. The same voltage is applied to the first and second clock lines.

Abstract: The output circuit includes a high gain differential amplifier having an inverting input terminal, a non-inverting input terminal and an output terminal with a feedback capacitance connected between the output terminal and the inverting input terminal. The input terminals are connected to first and second commonly phased lines of the charge transfer transversal filter. First and second charging and isolating means are connected between a source of operating voltage and the first and second commonly phased lines, respectively. The lines are charged periodically to the voltage of the source by the first and second charging and isolating means prior to the transfer of charge in a cycle of operation of the filter and are then isolated from the source during the transfer of charge in the filter by the first and second charging and isolating means.

Abstract: An array of charge storage devices each including a pair of closely coupled conductor-insulator-semiconductor cells, one a row line connected cell and the other a column line connected cell, is provided on a common semiconductor substrate. The potential well associated with the row connected cell is deeper than the potential well associated with the column connected cell. Read out of charge stored in a row of devices is accomplished by lowering the absolute potential of the row line to a first level to cause the charges stored in the row connected cells to be transferred to column connected cells of the row. The voltage on each of the column lines is then lowered in absolute magnitude in sequence to a second level to cause the charges to be transferred from the column connected cells to the row connected cells. The charge induced on the row line during transfer of charge from the column connected cells to the row connected cells is sensed to provide non-destructive readout of the stored charges.

Abstract: An array of charge storage devices each including a pair of closely coupled conductor-insulator-semiconductor cells, one a row line connected cell and the other a column line connected cell, is provided on a common semiconductor substrate. Read out of the charges stored in a row of devices is accomplished by obtaining the difference of pairs of signals, one sensed on the row line connecting the selected row of devices and the other of the signals sensed on the row line connecting an adjacent row of devices emptied of stored charge.

Abstract: Apparatus and methods for regenerating electrical charges to predetermined levels are disclosed. In one embodiment, electrical charges are regenerated in response to a changed voltage condition on an electrically isolated diffused region adapted to receive such charges. The regenerated charges are of predetermined magnitudes substantially independent of the magnitude of the received charge except for whether or not the received charges are above or below a threshold value. Means for regenerating a level of charge substantially less than 100 per cent of a normalized charge are also disclosed.

Abstract: An array of radiation sensing devices, each including a pair of conductor-insulator-semiconductor capacitors, arranged in rows and columns in which the row stripes or lines form row connected capacitors in relation to selected surface regions of a semiconductor substrate and in which the column stripes or lines form column connected capacitors in relation to the selected surface regions. Each of the row stripes overlies first portions of the selected surface regions of a respective row. Each of the column stripes overlies entirely the selected surface regions of a respective column.

Abstract: 1. The method of manufacturing a camera tube target from a semiconductor material for placement in a camera tube prior to degassing thereof comprising the steps of initially doping the semiconductor material with an impurity for rendering it sensitive to a desired radiation spectrum but in a quantity less than required for sensitivity in said desired radiation spectrum; annealing said semiconductor material at a temperature greater than the subsequent degassing temperature for a period of time effective to increase the impurity concentration to a level sufficient to render the semicoductor material sensitive to the desired radiation spectrum, said concentration being substantially more stable at lower degassing temperatures than the initial impurity concentration; positioning said semiconductor material as a target within a radiation sensitive camera tube enclosure; and degassing said camera tube enclosure by heating said enclosure including said target for driving the gas from said enclosure.

Abstract: A method of etching a desired pattern in a layer of indium tin oxide formed on a substrate of a semiconductor or an insulating material in which the desired pattern is formed of a hardened photoresist on the layer of indium tin oxide and thereafter the substrate and the indium tin oxide layer with the hardened resist thereon is immersed in a solution of concentrated hydrobromic acid for a time sufficient to etch away the indium tin oxide unmasked by the hardened photoresist.

Abstract: A method of making a voltage sensitive switch characterized by an irreversible change in resistance from a high resistance state greater than one megohm to a low resistance state less than approximately one hundred ohms is described as comprising heating substantially pure grade copper in an oxidizing environment for a sufficient time to oxidize the outer surface of the copper powder, mixing the oxidized copper powder with a binder and applying the mixture to a pair of spaced electrodes.

Abstract: In a charge transfer device electrode operating voltage is applied through a high-gain differential amplifier having an inverting and a non-inverting input terminal with capacitive feedback from the output terminal to the inverting terminal. The inverting terminal is connected to the charge transfer device electrode. The non-inverting terminal is connected to a source of operating voltage. During the transfer of charge the voltage on the electrode is maintained substantially constant and a voltage change is produced at the output of the amplifier which is approximately equal to the induced charge divided by the feedback capacitance.

Abstract: A signal pickup means is provided in a power supply having an inverter driven transformer therewithin for producing a cancellation signal substantially equal in magnitude and opposite in phase with respect to an unwanted common mode interference signal which otherwise appears on the electrical output from the secondary windings of the transformer with respect to an electrically isolated electromagnetic shield about the exterior of the power supply. This signal pickup is connected to the secondary winding and to an electrostatic shield about the secondary winding so as to effectively add the cancellation signal to the interference signal thereby substantially eliminating and reducing the unwanted common mode emanations from the output of the power supply. Preferably, the signal pickup is connected to substantially reduce unwanted common mode potentials between the center tap of the secondary windings and other shielding of the power supply in spite of electrical isolation therebetween.

Abstract: An array of radiation sensing devices each including a pair of closely coupled conductor-insulator-semiconductor cells, one a row line connected cell and the other a column line connected cell, is provided on a common semiconductor substrate. The potential well associated with the row connected cell is deeper than the potential well associated with the column connected cell. Read out of a row of devices is accomplished by lowering the absolute potential of the row line to cause charge stored in the row connected cells to transfer to column connected cells of the row. The voltage on each of the column lines is sensed in sequence to provide a video signal. Subsequent to sensing the column line potentials can be lowered to inject the stored carriers into the substrate or the row line potential may be reestablished to return the stored charge to the potential wells associated with the cells connected to the row lines and thus permit repeated read out.