Abstract: A method for selecting and configuring network supernodes includes (i) in a first set period T1, each node, other than a control node in a network, regularly sending information on interactions between the node and other nodes to the control node; and (ii) in a second set period T2, the control node dividing the nodes into a plurality of node clusters according to the received information on interactions among the nodes and selecting supernodes from each node cluster, where each node belonging uniquely to a node cluster.

Abstract: A method of forming patterns of a semiconductor device comprises providing a semiconductor substrate comprising a first region wherein first patterns are to be formed and a second region wherein second patterns are to be formed, each of the second patterns having a wider width than the first patterns, forming an etch target layer over the semiconductor substrate, forming first etch patterns over the etch target layer of the first and second regions, forming second etch patterns on both sidewalls of each of the first etch patterns, wherein the second etch pattern formed in the second region has a wider width than the second etch pattern formed in the first region, removing the first etch patterns, forming third etch patterns over the etch target layer of the second region, the third etch pattern overlapping part of the second pattern, and etching the etch target layer using the third etch patterns and the second etch patterns as an etch mask, to form the first and second patterns.

Abstract: A fluid control device including a valve body, a control member, and a one-piece bonnet. The valve body defines a flow path for a fluid. The control member is disposed in the valve body and adapted for displacement between at least a first position and a second position. The one-piece bonnet is coupled to the valve body and defines a protrusion. The protrusion extends at least partially into the flow path and is arranged to direct at least some of the fluid flowing along the flow path when the control member is disposed between the first position and the second position.

Abstract: Apparatus for reducing dust emissions from particulate commodities such as wheat or coal using a curved loading spoon connected to the discharge from a loading spout. The curved loading spoon turns particulate commodities delivered at a rate above a predetermined delivery velocity against a curved outer wall causing dust arising from the particulate commodities to be re-entrained within the commodities as they are diverted from a straight path by the curvature. Also described are an optional flap designed to rest just above the surface of the commodities stream adjacent the outlet, and a converging duct located upstream of the curve loading spoon and arranged to direct commodities against the curved outer wall adjacent the inlet.

Abstract: Embodiments of the present invention provide an Instant Messenger (IM) and a method for dispatching tasks by the IM. The method includes: presetting task information in a start-up program configuration table, and dispatching, by the IM, tasks in batches according to the task information in the start-up program configuration table. Preferably, the task information includes the execution delay information and priority information of the tasks. The IM includes a logging-on flow management module and a task dispatching management module. The logging-on flow management module is adapted to store the start-up program configuration table, which is configured with the task information. The task dispatching management module is adapted to dispatch the tasks in batches according to the task information in the start-up program configuration table. With embodiments of the invention, the start-up delay of the IM may be reduced.

Abstract: A method of manufacturing a nonvolatile memory device comprises providing a semiconductor substrate defining active regions and isolation regions with a gate insulating layer and a floating gate formed over each active region and isolation layer formed in the respective isolation regions, forming a dielectric layer on a surface of the isolation layers and the floating gates, forming a polysilicon layer over the dielectric layer through a polysilicon deposition process using a nitrogen source gas, a silicon source gas, and an impurity doping gas, and patterning the polysilicon layer to form a control gate.

Abstract: A method for forming a pack sequence, particularly packs of one or a plurality of articles, particularly beverage articles, including a sequence forming device, with a pack storing device for storing packs being connected to the sequence forming device via at least one transport path, the method including: transporting a pack along the at least one transport path from the pack storing device to the sequence forming device, wherein the transport of the pack is controlled such that the pack is introduced into the sequence forming device at a predetermined time.

Abstract: An organic electroluminescent device comprising: a transparent substrate; a first electrode; a second reflective electrode and an organic light-emitting region for emitting light of a wavelength 1 from a recombination zone within the light-emissive region, and a microcavity formed between the substrate and the second electrode, the distance between the transparent substrate and the second electrode being [(¼ni)l+(½nj)al]±40 nm, where a is zero or a positive integer, ni is an average refractive index of the material disposed between the recombination zone and the second electrode and nj is an average refractive index of the material disposed between the recombination zone and the substrate.

Abstract: The piezo-electric actuator (1) to oscillate the probe of a scanning probe microscope is arranged in the feedback branch (3) of an analog amplifier (4). A current source (10) is provided for feeding a defined alternating current to the input of the amplifier (4). The amplifier (4) strives to adjust the voltage over the actuator (1) such that the current from the current source (10) flows through the actuator (1). As the current through the actuator (1) is proportional to its deflection, this design allows to run the actuator at constant amplitude without the need of complex feedback loops.

Abstract: A non-volatile memory device includes a substrate, a tunneling layer over the substrate, a charge trapping layer including a nitride layer and a silicon boron nitride layer over the tunneling layer, and a blocking layer over the charge trapping layer, and a control gate electrode arranged on the blocking layer.

Abstract: A method of manufacturing semiconductor devices includes forming a dielectric interlayer over a semiconductor substrate, wherein a wet etch rate (WER) is faster in an upper part of the dielectric interlayer than in a lower part of the dielectric interlayer, forming trenches in the dielectric interlayer, performing a cleaning process to make a width of an opening portion in an upper part of each of the trenches wider than a width of an opening portion in lower part of the trench, and filling the trenches with a metal layer.

Abstract: A catastrophic hazard protection (CHP) mortgage may be provided on real property or structure(s) on the real property of a owner. The CHP mortgage may be structured to include financial protection in the event that one or more structures of the real property is damaged by a catastrophe such as a hurricane or earthquake. The owner may pay an increased interest rate on the CHP mortgage. If catastrophe damage occurs, the principal amount of the CHP mortgage may be reduced by the lesser of the value of the damage or the principal balance. Alternatively, the owner may receive a payment equivalent to the lesser of the value of the damage or the principal balance. A CHP mortgage may be implemented electronically. Additionally, catastrophic hazard protection may be added onto an existing mortgage.

Abstract: Disclosed herein is an adhesive release article comprising an absorbent substrate, a cross-linking agent, and a polymer; wherein the substrate is first coated with the cross-linking agent and is then coated with the polymer.

Abstract: Disclosed is a system and method for controlling current in a switched reluctance motor by changing a dwell state including starting the motor in a normal mode, measuring current in the motor, comparing the measured current to a first threshold, triggering an interrupt if the measured current exceeds the first threshold, keeping a count of consecutive readings exceeding the first threshold, changing the dwell state from a first state to a second state if the measured current exceeds the first threshold and the count equals a set value, changing the dwell state from a second state to a third state if the measured current exceeds a second threshold, and triggering a fault condition if the measured current in the third state exceeds a third threshold.

Abstract: An apparatus is provided for machining workpieces that, when in use, functionally cooperate with each other. The apparatus includes a frame for mounting each of the workpieces, and a machining tool mountable to the frame such that the tool is capable of defined relative movement with respect to the frame. The frame includes one or more adjustable supports for adjusting the position of the workpieces relative to the frame for operative engagement between the tool and the workpieces. The adjustable supports are fixable to maintain the position of one of the workpieces relative to the frame for machining in accordance with the defined relative movement, and the apparatus is adapted to permit the workpiece to be removed and replaced with one of the other workpieces, for machining in accordance with the defined relative movement. A method is also provided.

Abstract: A gas regulator includes an actuator, a regulator valve, and a secondary device. Downstream pressure feedback is provided to the actuator and the secondary device via a Pitot tube disposed within an outlet of the regulator valve. The Pitot tube has a first branch having an end connected to the actuator to place the actuator control cavity and diaphragm in fluid communication with downstream pressure within the outlet for maintaining the outlet pressure at an actuator setpoint pressure. The Pitot tube also has a second branch having an end connected to the secondary device to place the interior of the secondary device in fluid communication with downstream pressure within the outlet for responding to changes in the downstream pressure when the outlet pressure diverges from a predetermined normal operating pressure range.

Abstract: A method and apparatus provide techniques for stenting ostial legions and other restenosis in vessels through a stenting apparatus that includes both a guidewire and a separate marker wire. In some examples, the marker wire is threaded through a tubular body of the stenting apparatus and in other examples, the marker wire may be threaded externally through the tubular body. In both such examples, the marker wire may be aligned with a radiopaque marker of the apparatus to guide marker wire positioning.

Abstract: A suspension having a specific gravity greater than 1.0 that contains one or more reactive materials, said suspension containing a biopolymer that decomposes over time, thereby releasing the contaminant reactant for contact with the contaminants in the waterway bottom sediment or waterway floor material. In one embodiment, the suspension includes a water-buoyant material, that can be placed underwater over a sub-aqueous waterway bottom or floor that contains a contaminant to be treated or confined and remains in place for treatment and/or confinement. After the suspension is placed, it may be stabilized against movement by applying a confining or weighting layer, such as sand or a water-permeable or water-impermeable geotextile, thereover.

Abstract: A method for fabricating a device isolation structure of a semiconductor device includes the steps of forming a pad oxide layer and a pad nitride layer over a semiconductor substrate including a cell region and a dummy region, etching a portion of the pad nitride layer, the pad oxide layer and the semiconductor substrate to form a trench, forming a sidewall oxide layer over the sidewalls of the trench; removing the sidewall oxide layer in the dummy region, forming a silicon nitride layer over the sidewalls of the sidewall oxide layer both in the cell region and in the dummy region, filling the trench with an insulating layer, polishing the insulating layer to expose the pad nitride layer, and removing the pad nitride layer.