Abstract: In a wheel bearing assembly, the length of an annular protrusion in an axis direction, or the oscillation angle through which the center axis of a calk jig is oscillatingly turned relative to the center axis of a constant-velocity joint outer ring is restricted so that the annular protrusion and the calk jig do not interfere with each other when the constant-velocity joint outer ring is calk-fixed to the calk fixation portion of the wheel hub by radially outwardly bending a tubular protrusion formed on an end surface of the center shaft portion through the oscillating turn of the calk jig after the center shaft portion of the constant-velocity joint outer ring has been fitted to the hollow hole of the wheel hub.

Abstract: An outer tapered member (4) having a conical inner circumferential surface is placed and an inner tapered member (5) having a conical outer circumferential surface in contact with the conical inner circumferential surface is placed in a through hole (31) of a first ring (1). A screw member (6) is screwed a predetermined quantity into the through hole (31) to axially press an axial end face of the inner tapered member (5) toward a second ring (2) with a predetermined force and to press the outer surface of the outer tapered member (4) against the through hole (31) of the first ring (1) with a predetermined force. A weld part (7) in contact with a first ring (1) side end portion of a pin (3) and the first ring (1) is formed to prevent the pin (3) from coming out of the first ring (1) by the weld part (7).

Abstract: In a layout pattern generating method, a specific rework cell used for edition is specified among rework cells and fill cells which are arranged in a semiconductor chip area and a specific pattern of a predetermined shape is generated in a wiring layer for the specific rework cell. A dummy wiring pattern is arranged in at least a part of the wiring layer of and the fill cell and un-specific rework cells among the rework cell other than the specific rework cell. The specific pattern is deleted from the wiring layer for the specifying rework cell. A wiring pattern is arranged in the wiring layer for the specific rework cell by wiring the specific rework cell as a logic cell.

Abstract: A semiconductor device includes a bit line, a memory cell coupled to the bit line, the memory cell being configured such that a current flowing there the memory cell is varied in accordance with information stored M the memory cell, a first transistor coupled at a control electrode thereof to the bit line, a second transistor coupled to the bit line and supplied at a control electrode thereof with a first control signal, a global bit line, and a third transistor coupled in series with the first sistor between a node and the global bit line, the third transistor supplied at a control electrode thereof with a second control signal.

Abstract: A display panel drive apparatus includes a source driver that drives each unit dot in accordance with a time-divisional clock, and a booster circuit that generates a supply voltage to be supplied to the source driver based on a clock having a rising edge and a falling edge each coinciding with an off-period of the time-divisional clock. The display panel drive apparatus performs a time-divisional driving operation during one horizontal period.

Abstract: An interconnect substrate is placed over a first inductor of a semiconductor chip and a second inductor of another semiconductor chip. The interconnect substrate includes a third inductor and a fourth inductor. The third inductor is located above the first inductor. The distance from the first inductor to the third inductor is longer than the distance from the second inductor to the fourth inductor.

Abstract: A light emitting device includes a light-emitting portion including a metal part including a metal able to be bonded to a solder material, and a heat dissipation member that includes aluminum, aluminum alloy, magnesium or magnesium alloy and a bonding portion processed to be bonded to the solder material. The metal part of the light-emitting portion is bonded via the solder material to the bonding portion of the heat dissipation member. The solder material includes a material unable to be directly bonded to the heat dissipation member, the metal part of the light-emitting portion is formed by metalizing an insulation of ceramic or semiconductor, and the bonding portion includes a thermal expansion coefficient between that of the heat dissipation member and that of the insulation.

Abstract: A method for producing a light-emitting device including a growth substrate made of Group III nitride semiconductor, and a Group III nitride semiconductor layer stacked on the top surface of the growth substrate, includes forming, between the growth substrate and the semiconductor layer, a stopper layer exhibiting resistance to a wet etchant, and wet-etching the bottom surface of the growth substrate until the stopper layer is exposed.

Abstract: A pump chamber (15) is formed between a piezoelectric vibrator (7) and a valve main plate (10). The valve main plate (10) includes an inlet port (13) at its central portion, and an outlet port (14) in its peripheral portion, and the inlet port (13) is made in a smaller diameter than the outlet port (14). On the valve main plate (10) an inflow check valve (11) and an outflow check valve (12) are provided, so that when the inflow check valve (11) and the outflow check valve (12) open and close in response to the vibration of the piezoelectric vibrator (7), a fluid is introduced into and discharged from the pump chamber (15).

Abstract: Disclosed is a digital still camera in which amount of exposure is decided appropriately even when there is a changeover from one shooting scene to another. When a shooting mode is set, a first shooting scene discrimination is performed before a shutter-release button is half-pushed. A first amount of exposure is calculated using a program diagram suited to the shooting scene that has been discriminated by the first shooting scene discrimination. Shooting for focusing control is performed at an exposure corresponding to the first amount of exposure, whereby image data is obtained. Focusing control is carried out based upon the image data obtained, and shooting is performed again. Second shooting scene discrimination is performed based upon the image data obtained by shooting. A second amount of exposure is calculated using a program diagram suited to the shooting scene that has been discriminated by the second shooting scene discrimination.

Abstract: A semiconductor device, includes a first memory cell array, a second memory cell array, a command decoder configured to produce a transfer command to transfer a data stored in a first area of the first memory cell array to a second area of the second memory cell array, when receiving a read command to the first memory cell array and sequentially a write command to the second cell memory array, a first address generator configured to produce a first internal address for designating the first area of the first memory cell array when receiving the transfer command from the command decoder; and a second address generator configured to produce a second internal address for designating the second area of the second memory cell array when receiving the transfer command from the command decoder.

Abstract: In a semiconductor device, a lower multi-layered interconnect structure, an intermediate via-level insulating interlayer, and an upper multi-layered interconnect structure are stacked in this order in a region overlapped with a bonding pad in a plan view; upper interconnects and vias of the upper multi-layered interconnect structure are formed so as to be connected to the bonding pad in the pad placement region; the intermediate via-level insulating interlayer has no electro-conductive material layer, which connect the interconnects or vias in the upper multi-layered interconnect structure with interconnects or vias in the lower multi-layered interconnect structure, formed therein; and the ratio of area occupied by the vias in the via-level insulating interlayers contained in the lower multi-layered interconnect structure is smaller than the ratio of area occupied by the vias in the via-level insulating interlayers contained in the upper multi-layered interconnect structure.

Abstract: By more flexibly controlling connection for each transmission rate in the wireless base station, the connection is established using possibly a higher transmission rate so long as the connection capacity of the wireless base station has a margin while efficiently determining the transmission rate according to the wave intensity from a wireless communication terminal. If the connection capacity of the base station has a margin after additionally connecting one wireless communication terminal, i.e., if the communication traffic is equal to or less than a predetermined margin threshold value, the rate decision threshold value to determine the transmission rate for connection is lowered by a predetermined value to determine a transmission rate so that the connection is established using a transmission rate higher than that determined by the rate decision threshold value as the default value (initial value) to thereafter establish the connection.

Abstract: A semiconductor device includes a semiconductor chip having a current path between a first principal surface and a second principal surface opposite from the first principal surface, a first conductive frame having an opposite region to the first principal surface, and a second conductive frame electrically connected via electrical connection member to a pad formed on the second principal surface. In a gap between the first principal surface and the first conductive frame, there are arranged multiple column-shaped lead-free solders which are arranged within a circle drawn around a center of the opposite region and having a diameter corresponding to a narrow side of the opposite region, and which electrically connects the first conductive frame with the semiconductor chip, and a filler which is filled between the multiple column-shaped lead-free solders.

Abstract: A substrate includes a base material, a first solder part disposed on a surface of the base material and used for connection to an electronic component, and a second solder part disposed on the surface of the base material and made of the same solder as that of the first solder part. The top surface of the first solder part is made to be a flat surface, and the maximum height of the second solder part from the surface of the base material is lower than the height of the flat surface of the first solder part from the surface of the base material. Thus, a substrate for which the kind of solder can be determined easily and with certainty, a device provided with this substrate, a method of manufacturing the substrate, and a determining method are provided.

Abstract: A cosmetic in an emulsified state, in which a titanium dioxide microparticle coated with hydrous silicic acid and/or a hydrous silicate compound, a higher alcohol, an oily component other than the higher alcohol, and a polysaccharide are contained, and the polysaccharide containing at least one of fucose, glucose, glucuronic acid and rhamnose as a constituent monosaccharide, and having fucose and/or rhamnose in a side chain is contained in an amount of 0.01% by weight to 1% by weight relative to the total amount of the cosmetic. And a cosmetic containing the higher alcohol, the oily component and the polysaccharide in an emulsified state, in which the higher alcohol is composed of two or more kinds of higher alcohols having different molecular weights, and is contained in the cosmetic in an amount of 1% by weight to 20% by weight relative to the total amount of the cosmetic.

Abstract: A wire harness includes a cable, a connector including an outer housing including a resin, a cable insertion hole into which an end portion of the cable is inserted, and a concave portion formed on an insertion side of the cable insertion hole, and a welding member including a resin to provide air-tightness between the outer housing and the cable by being welded to the outer housing by ultrasonic welding. The welding member is formed around the cable so as to surround the cable while allowing a gap portion to have a predetermined clearance from the cable, and fitted into the concave portion of the outer housing. Melted resin of the welding member is to flow into the gap portion to form an airtight seal about the cable.

Abstract: A switching hub for processing a VLAN frame transmitted through a transmission line of a ring network includes two ring ports connected to the transmission line of the ring network, and a forwarding processing mechanism for, when one of the two ring ports receives the frame and when a VLAN in which the received frame belongs is a VLAN only through both the ring ports, forwarding the frame to the other ring port without performing FDB learning on the frame.

Abstract: A communication device includes a transmission signal processing unit, a driver amplifier coupled to the transmission signal processing unit, a selector coupled to the driver amplifier, a first attenuator coupled to the selector and an output portion of the communication device, a second attenuator coupled to the selector and the output portion of the communication device, and a controller coupled to the selector and the driver amplifier to switch between the first attenuator and the second attenuator based on a notification signal.