Abstract: An interface circuit for converting a digital signal representing a dot-by-dot color video signal into a NTSC signal compatible with a television antenna input precompensates the digital for limitations in typical NTSC receivers. Various methods and circuits for precompensating the luminance amplitude, chrominance and chrominance amplitude content of the digital signal result in perceivably improved contrast and color purity.

Abstract: An integrated circuit structure and process for fabricating it are described which allow fabrication of a very compact high-speed logic gate. The structure utilizes a bipolar transistor formed in an epitaxial silicon pocket surrounded by silicon dioxide. A pair of Schottky diodes and a resistor are formed outside the epitaxial pocket on the silicon dioxide and connected to the pocket by doped polycrystalline silicon.

Abstract: A high current lateral transistor suitable for intergrated circuit construction is fabricated in the form of a plurality of parallel transistors. Each transistor has an emitter surrounded by a closely confronting collector with the intervening semiconductor acting as the base region. Groups of parallel connected transistors are located on both sides of and distributed along a centerline which contains a number of diffused crossunder resistor elements. Each group of transistors is flanked on both sides by a base contact that is extended perpendicularly away from the centerline and connected by metalization to a resistor element. The resistor elements act to distribute the transistor base currents in a ballasting operation that promotes proper current distribution. Since the resistors are under the oxide the emitter and collector metalization can pass across the centerline region and parallel connect the individual transistors.

Abstract: In an integrated circuit audio power amplifier a 6 db per octave frequency-gain roll off is obtained in a conventional manner by converting a high gain inverter to an integrator and driving the integrator from a current source. A second cascaded stage is also provided so that it operates at lower gain and has a matching high frequency roll off. When such characteristics are combined in cascade the result is a 12 db per octave roll off at the higher frequencies. A flat negative feedback loop is employed to maintain a controlled constant low frequency gain. In the response region located between the 12 db per octave slope region and the constant gain region there is a 6 db per octave slope. The configuration is stable without resorting to frequency sensitive feedback.

Abstract: In an automatic assembly tape for semiconductor device assembly a continuous tape includes a plurality of sequential metal finger patterns. Each pattern includes a plurality of fingers that extend inwardly to form an array that mates with the bonding pads on a semiconductor device chip. The fingers are bonded to the chip pads so that the chip is then associated with the tape and therefore amenable to further assembly on high speed machines on a reel-to-reel tape handling basis. Each finger pattern includes an inner tear strip ring that initially holds the fingers together in a unitary structure. The fingers are joined to the ring via intermediate weakened regions. After the fingers are bonded to the chip pads, the ring is torn away so as to separate at the weakened regions. Prior to bonding, the fingers are held in precise location and in a common plane. This allows close spaced complex finger patterns and avoids bent fingers which can cause bond failure and possibly clogging of the auto assembly machines.

Abstract: An error checking apparatus and method for detecting a plurality of errors in a digital data word includes means for generating a unique syndrome word for each one of a plurality of error patterns in a word containing up to N-1 bits in error, where N is the number of bits in said word.

Abstract: This disclosure is directed to an improved semiconductor capacitor structure especially useful in an integrated semiconductor structure with an MOS device and fabrication methods therefor. This semiconductor capacitor is particularly useful for forming the capacitor portion of a single MOS memory cell structure in a dynamic MOS random access memory which utilizes one MOS device in combination with a capacitor. In one specific disclosure embodiment, the semiconductor capacitor comprises a boron (P) implanted region in a substrate of P- type conductivity followed by a shallow arsenic (N) implant into the boron implanted region. The boron implanted region provides a P type conductivity which has a higher concentration of P type impurities than the concentration of impurities contained in the substrate which is of P- type conductivity.

Abstract: A microprocessor comprising: an address data path; an arithmetic logic unit data path, said data paths being capable of simultaneous operation; an information bus; a shared bus register; a shared input multiplexing apparatus for selectively transferring address and data information from said information bus and data information from said arithmetic logic unit data path to said shared bus register; and a multiplexing apparatus for transferring information from said shared bus register to said arithmetic logic unit data path and to said information bus via said address data path whereby said shared bus register is selectively useable as a memory data register, a memory address register and a temporary or "scratch-pad" register during normal operation of the microprocessor; and further comprising; a programmable logic array containing a sequence of microinstructions and apparatus connected thereto for testing the operability of the microprocessor.

Abstract: A trim structure having a nominal resistance value can be adjusted to have a higher or lower value by a combination of fuse blowing and zener zapping. In the preferred embodiment a pair of integrated circuit pads are employed in a trim structure along with a pair of back-to-back zener diodes, a fuse link, and four resistors. In its initial state, with both diodes and the fuse link intact, a particular or nominal resistance value is available. Blowing the fuse link alone produces a second or highest resistance value. Shorting, or zapping, one zener diode produces a third higher than nominal but lower than highest resistance value. Shorting, or zapping, the other zener diode produces a fourth, lower than nominal, resistance value. Shorting, or zapping, both zener diodes produces a fifth lowest resistance value. Thus, five different resistance values are available using only two integrated circuit pads. If desired, the five resistance steps can be made linear by properly selecting the resistor values.

Abstract: In a system for plating precisely located spots on an intermittently moved strip of metal, a spring loaded pawl on the spot defining mask is positioned to grasp holes in the strip and move just the mask a short distance with the strip so as to insure mask alignment with the strip.

Abstract: Diagnostic testing of a charge coupled device is facilitated by interconnecting the reference node of the sense amplifier for each data block in the CCD device with a probe contact on the device, thereby eliminating the need for applying a microprobe to the sensitive reference node. Reference voltages under different operating conditions can be evaluated by measuring the device generated reference voltage or by applying variable reference voltages through the probe contact to the reference node.

Abstract: An address gate for a random access memory includes a pair of emitter-coupled and collector-coupled transistors, and another transistor emitter-coupled to the pair of transistors. Complimentary outputs are read at the coupled emitters of the pair of transistors and the collector of the other transistor respectively, there being an input signal applied to the base of one of the pair of transistors, and a control signal applied to the base of the other of the pair of transistors, which overrides the operation of one of the pair of transistors when the control signal is in its high state.

Abstract: A plating head for spot plating a web of moving material that plates faster due to a large planar electrode that faces the plating area and a system of electrolyte channels that inject electrolyte at a high rate from the side of the electrode into the space between the electrode and the plating area.

Abstract: A plating mask of molded unitary configuration with electrolyte admitting openings held to very accurate position and dimension by a molding process in which the mask is formed between two separable molds with forms supported therebetween to exclude material from both mask penetrating and transverse circulation passageways.

Abstract: An electroplating mask support structure of particular use in the plating of semiconductor chip lead frames in which a support bar has a number of support stations thereon with masking die containing cavities in the stations.

Abstract: A process and resulting structure are disclosed for forming vias in integrated circuit structures using metal silicide interconnections. A lower conductor is formed by sequentially depositing silicon and a refractory metal which reacts with the silicon to create a layer of metal silicide. A subsequent layer of silicon is deposited on the surface of the metal silicide. This layer of silicon is insulated from overlying layers by forming insulating material over desired regions of the layer of silicon. A second layer of metal is then deposited across the structure. In openings in the insulating material the metal reacts with the second layer of silicon to form a via of metal silicide. A final layer of silicon may be deposited to convert any remaining metal in the second layer of metal to metal silicide, and the structure annealed to lower its resistivity.

Abstract: A process for fabricating an electrically erasable nonvolatile memory cell comprises forming a first region of insulating material which is less than about 200 Angstroms thick on a selected surface portion of an electrically-isolated relatively lightly doped pocket of epitaxial silicon of a first conductivity type such that first and second surface areas of the epitaxial pocket are exposed. Regions of the epitaxial pocket underlying the first and second exposed surface areas are doped such that first and second relatively lightly doped regions of a second conductivity type are formed in the epitaxial pocket. Relatively heavily doped polysilicon regions of the first conductivity type are formed on the first insulating region and on the second relatively lightly doped epitaxial region.

Abstract: An interruptible microprogram sequencing unit (MSU) for providing a sequence of microinstruction addresses to a control memory containing microinstructions for the operation of a microprogrammed apparatus. The MSU includes an address output for providing microinstruction addresses to the control memory, an address bus connected to the address output such that a plurality of microinstruction addresses applied to the address bus are sequentially provided to the address output, means connected to the address bus for applying the plurality of microinstruction addresses to the address bus, an interrupt return register operably connected to the address bus for receiving a microinstruction address from the address bus and storing the received microinstruction address, and means connected to the address bus for interrupting the sequence of microinstruction addresses and effecting storage of a microinstruction address on the address bus in the interrupt return register.

Abstract: Apparatus for amplifying output signals from a charge coupled area imaging device includes a resettable first floating gate amplifier connected to sense charge in the charge coupled device output register at a first location, a second floating gate amplifier connected to sense charge in the charge coupled device output register at a second location, and a charge limiting well disposed between the first location and the second location to remove charge in excess of a desired amount before the output signals are sensed at the second location. The dual preamplifiers permit optimization of the output signals from the charge coupled imaging device for two substantially different light levels by providing a substantially lower noise equivalent input signal level from the second preamplifier.

Abstract: A microprocessor for facilitating the execution of instructions which require repetitive shift and arithmetic logic unit operations comprises an arithmetic logic unit having a first and a second input and an output, a plurality of registers, at least one of which is a bidirectionally shifting register and multiplexing apparatus for selectively coupling each of said plurality of registers to said first and said second inputs and said output of said arithmetic logic unit.