Abstract: The present invention describes a loading system for high speed loading of wafers, such as semiconductor wafers, into vacuum chambers for various applications such as inspection or processing using, for example, a SEM. This system provides low contamination from atmospheric conditions both on loading and unloading the wafers.

Abstract: A connection member (1) comprises an insulating housing (3) which includes a cavity (5) in which a contact element (11) can be arranged. A surface (9) of the housing (3) is provided with at least one wire insertion opening (7) which communicates with the cavity (5). The contact element (11) comprises an electrically conductive, flat contact member (15) and a flat bearing (17) which resiliently contact one another. The contact member (15) and the bearing (17) enclose an acute angle (33), thus forming an inlet opening (35) for receiving a wire-shaped electrical conductor (41). When the contact element (11) is arranged in the connection member (1), the inlet opening (35) faces the wire insertion opening (7). The connection member (1) also comprises a control member (13) which is adapted to remove a clamped wire without invoking damage from the connection member (1) by moving the contact member (15) and the bearing (17) apart.

Abstract: A device is set forth for interrupting a material flow by means of a shutter 5 fastened on a spindle 11, which spindle 11 is rotatably supported in a housing 1 of the device. The device is provided with a torsion spring 33 which is elastically deformable through rotation of the spindle 11, with substantially equal amounts of mechanical energy being stored in the torsion spring 33 through elastic deformation in a first position of the shutter 5. The material flow is shut off during this operation, and in a second position of the shutter 5 the material flow begins. The spindle 11 is provided with a permanent magnet 57 having pole shoes 61, 63 which are held against stops 109, 115 of a magnetic yoke 99 in the first position under the influence of the magnetic field of the magnet 57, and which are held against stops 111, 113 of the yoke 99 in the second position. The yoke 99 is provided with an electric coil 121.

Abstract: Contact device (10) for the photocathode (11) of photoelectric tubes is produced by a metallic deposit on a substrate (12) intended to receive the photocathode. According to the invention, the contact device (10) is formed by narrow conductive contacts (20) deposited on the useful area (21) of the substrate (12).

Abstract: A sealed neutron tube is set forth, containing a low-pressure gaseous deuterium-tritium mixture wherefrom an ion source (13) forms an ion beam which traverses an acceleration electrode (17) and is projected with high energy onto a target (16) in order to produce therein a fusion reaction which causes an emission of neutrons. In accordance with the invention, the ion source comprises a cold cathode with strictly electrostatic confinement of ionizing electrons; this is achieved by using an anode which is connected to a positive potential and which has a weakly collective surface facing the repulsive surface of the cathode cavity; the anode is arranged along the axis of the cavity in which it is arranged; said cavity constitutes the internal part of the cathode (15) in which the electrons (e.sub.2) which oscillate along very long paths in comparison with the dimensions of the cathode cavity ionize the gas and form an ionized gas wherefrom the ion beam (22) is extracted for standard ion optical device (17).

Abstract: A cathode ray tube comprising a rectangular display window whose thickness increases from the center of the display window along the long and the short axes. The thickness D (x) of the display window along the long axis (x) is defined by:D(x)=D.sub.O +.DELTA.(x);the thickness D(y) of the display window along the short axis (y) is defined by:D(y)=D.sub.O +.DELTA.(y);where D.sub.O is the thickness at the center of the window, and .DELTA.(y) is larger than 1.5.DELTA.(x). The display window thus formed combines a large strength with a relatively low weight. The invention is of particular importance in cathode ray tubes having a length: width ratio which is larger than 4:3, for example 16:9, and in large (.gtoreq.28 inch) tubes.

Abstract: A low-energetic charged particle beam, involving only a slight space charge effect, can be obtained by high-frequency deflection of a charged particle beam before deceleration. Using a deceleration element provided with curved surfaces and a slit-shaped aperture, a focusing effect is obtained so that the charged particle beam is imaged along a linear path on a target surface. For implantation of a semiconductor substrate, a uniform and shallow implantation can be achieved at adequate speed by means of a low-energetic ion beam obtained in the above manner.

Abstract: A method of manufacturing a semiconductor device including both an enhancement (1) insulated gate field effect transistor (IGFET) and a depletion (2) mode IGFET is described. Impurities are introduced into a first region or epitaxial layer (4) of one conductivity type adjacent a given surface (3a) of a semiconductor body (3) to provide, for both the enhancement mode (1) and for the depletion mode (2) IGFET, a second region (5) of the opposite conductivity type adjacent the given surface, a source region (9) of a first conductivity type adjacent the given surface (3a) and surrounded by the second region (5) and a drain region (10) of the first conductivity type having a relatively lightly doped drain extension region (11) adjacent the given surface and extending toward the source region (9).

Abstract: A method and a device for cleaving a plate of a brittle material, such as, for example, glass, by means of a radiation beam repeatedly moving over the plate. The radiation beam is repeatedly passed over a desired track until the plate has been cleaved along a desired line of rupture of the plate.

Abstract: A device is set forth for the extraction and acceleration of ions in a sealed high-flux neutron tube in which an ion beam (3) is extracted from an ion source (1), after which it is accelerated by means of an acceleration electrode (2) so as to be projected onto a target electrode (4) and produce therein a fusion reaction which causes an emission of neutrons. In accordance with the invention, the device also comprises an extraction-pre-acceleration electrode (13) which is arranged between the ion source and the acceleration electrode and which carries a potential such that the beam extracted from the ion source is initially rendered parallel or slightly diverging in order to obtain a laminated ion beam throughout the zone between the ion source and the target electrode.

Abstract: A method of manufacturing a semiconductor device, such as a semiconductor diode laser, is set forth to form a mesa and current blocking structure on either side of the mesa. In this technique a lift-off step is used to form a contact layer as a direct result of removing semiconductor layers. This is accomplished by using a selective etchant that removes overlying layers, but does not remove a subjacent layer which may be the contact layer. As a result, the growing process is economized by an inexpensive method having a high yield.

Abstract: A method of manufacturing by autoalignment an integrated semiconductor device is set forth comprising the realization on respective semiconductor layers of a first encapsulated electrode contact E provided with spacers and of a second autoaligned electrode contact B on the first contact thus equipped, which process comprises at least: a.sub.0) the formation of a first and a second semiconductor layer for receiving the first and the second electrode contact, respectively; b.sub.0) the formation by a so-called image reversal method of an opening B.sub.o with overhanging sides in a photoresist layer deposited on the first semiconductor layer; c.sub.0) the deposition of a first metal layer forming the first electrode contact E in this opening, which contact has sides F.sub.2 of a lower height than those F.sub.1 of the photoresist layer, these sides F.sub.2 having upper edges which are situated laterally at a small distance from the overhanging sides F.sub.

Abstract: A method of manufacturing a display tube comprising an envelope having an envelope portion and a display window. The quantity of X-rays released from the envelope portion is determined, after which discrete X-ray absorbing means are provided in those places of the envelope where the quantity of X-rays released exceeds a limiting value. In a display tube manufactured according to such a method and comprising, in particular, a substantially rectangular display screen and a cylindrical neck portion having an electron gun the diagonals of the envelope of which are provided with discrete X-ray absorbing means, the desirable quantity of X-rays is absorbed in a simple and cost-effective manner.

Abstract: A method of manufacturing a semiconductor device comprising a semiconductor body (3) with a surface (10) on which capacitors (2) are provided, which form memory elements, with a lower electrode (11) including platinum, a ferroelectric dielectric material (12) and an upper electrode (13) is presented. In the method according to the invention, the electrodes (11, 13) including platinum are formed by the successive deposition on a surface of a first layer (19, 26) comprising a metal from the group titanium, zirconium, hafnium or an alloy of these metals, a second layer (20, 27) comprising platinum, and a third layer (21, 28) comprising a metal from the group titanium, zirconium, hafnium, or an alloy of these metals, upon which the semiconductor body is heated in an atmosphere containing oxygen. The first metal layer ensures a good adhesion of the electrode, the second layer acts as the electrode proper, while the third metal layer counteracts adverse effects of the first layer.

Abstract: Semiconductor device with a wiring pattern 3, 6 is provided with an insulating layer 4 embedded in an envelope 5 made of synthetic material. To prevent hair cracks in the insulating layer 4, the thickness of the insulating layer 4 is so chosen that the lowest point of top 8 of the insulating layer 4 is at a higher leverl than the highest point of the wiring pattern 3, 6.

Abstract: A device is set forth for the extraction and acceleration of ions in a high flux sealed neutron tube containing a low-pressure gaseous deuterium-tritium mixture, where an ion source (12) supplies several ion beams (3a, 3b, . . . 3e) which are projected onto a target electrode (4) by means of an extraction and acceleration system in order to produce therein a fusion reaction which causes an emission of neutrons.

Abstract: Method of manufacturing a semiconductor device in which a first conductive, aluminium containing layer (15) is deposited with a low step coverage process over an insulating layer (11) with contact openings (12), in which a second conductive layer (16) is deposited with a high step coverage so as to fill depressed parts of the first conductive layer at the area of the contact openings. The second conductive layer (16) then is substantially eliminated outside the depressed parts and interconnection lines (18) are formed in the first conductive layer. According to the invention the second conductive layer is deposited by D.C. bias sputtering of an aluminium alloy at a substrate temperature which is sufficiently high to obtain a sufficient surface mobility of the deposited alloy. Therefore a planarized layer of the second conductive material (18) is obtained.

Abstract: The divergence of the magnetic field for confining the ionized gas (9) in a sealed high-flux neutron tube comprising a Penning-type ion source (1) is increased in the direction of the ion emission zone by influencing the magnet assembly (8) of the ion source. The ion beam extracted from the plasma is accelerated (2) and projected onto a target (4). The geometry and the position of the anode (13) inside the ion source are adapted to the topography of the lines of force in order to ensure minimum interception of the ionizing electrons moving in the structure, which adaptation is achieved notably by using a truncated anode whose generatrices take the shape of the lines of force.

Abstract: The present invention describes a loading system for high speed loading of wafers, such as semiconductor wafers, into vacuum chambers for various applications such as inspection or processing using, for example, a SEM. This system provides low contamination from atmospheric conditions both on loading and unloading the wafers.

Abstract: A surface layer (10), for example oxide, is provided on a first major surface (2) of a semiconductor body (1). A masking layer (11) having at least one window (12) is defined on the surface layer (10). The surface layer (10) and the semiconductor body (1) are etched through the window (12) to define an opening (13in the surface layer (10) and a recess (14) within the semiconductor body (1) extending beneath the surface layer (10) so that a rim portion (10a) of the surface layer (10) overhangs the recess (14). The rim portion (10a) of the surface layer (10) is removed by causing a settable flowable material (15) to flow onto the surface layer (10) and into the recess (14) and then causing the flowable material to set and thereby change volume to apply a force for causing the rim portion (10a) to break away from the remainder ( 10b) of the surface layer (10). The set flowable material (150) and thus the rim portion (10a) of the surface layer (10) are then removed.