Abstract: A mask (4) defining at least one window (4a) is provided on one major surface (1a) of a semiconductor body (1). The semiconductor body (1) is etched to define a groove (5) into a first region (2) of one conductivity type through a second region (3) of the opposite conductivity type. A relatively thin layer of gate insulator (6) is provided on the surface (5a) of the groove (5). A gate conductive region (7) of an oxidizable conductive material is provided within the groove (5) to define with the gate insulator layer an insulated gate structure (8) bounded by a conduction channel-defining area (30) of the second region (3). A step (15) in the surface structure is then defined by causing the insulated gate structure (8) to extend beyond the surrounding surface by oxidizing the exposed (7a) gate conductive material to define an insulating capping region (9) on the gate conductive region (3).

Abstract: A wave transmission line, in the slow-wave mode, is of the microstrip type, including a first conductive layer (11) called lower layer which forms the ground plane, a second conductive layer (12) called upper layer in the form of a strip having specific transverse and longitudinal dimensions, and a third material (1,2) which is not conductive and is disposed between these two conductive layers. This transmission line has, in longitudinal direction, a periodic structure while each period L in length is formed of a bridge (4) followed by a column (13). Each bridge is constituted by an upper conductive strip section (12), having a length of L.sub.1 <L, disposed on the surface of one such first part (1) of the third material, which has a dielectric nature. In addition, each column (13) is a capacitor which may be an active or a passive element. The first conductive layer (11) may further have recesses (5) underneath each bridge.

Abstract: The electric lamp includes a moulded reflector body (1) having a neck-shaped portion (12) which has an end portion (13). A lamp cap (2) is connected to the neck-shaped portion (12). An insulator body (5) surrounds the end portion (13). The insulator body is a ring which is wider than the lamp cap (2), and extends completely about the neck-shaped portion (12). The lamp cap (2) surrounds the end portion (13) and is directly attached thereto. The electric lamp is able to comply with an IEC requirement, while components of the lamp can be used to assemble a lamp complying with an ANSI requirement, without employing additional or different components.

Abstract: A method describing the manufacture and use of aqueous suspensions comprising fine-powdered ceramic solid particles, dispersing agents and, if necessary, binders, in which method the manufacture of the suspensions includes the following process steps which are carried out separately or in combination:washing the solid particles in water before preparing the suspension;adding anionic compounds, in the form of sulphates, carbonates, iodates, chromates, oxalates, citrates and/or tartrates;manufacturing the suspensions and/or storing the finished suspensions in a CO.sub.2 -free gaseous atmosphere;manufacturing the suspensions and storing the finished suspensions at a temperature below 20.degree. C., preferably below 15.degree. C.;adding additional dispersing agents to the suspension at a time when reagglomeration of the solid particles in the suspension has not yet started or just started.

Abstract: A semiconductor component is formed by an insulated gate field effect device having a semiconductor body with a first region of one conductivity type adjacent one major surface, a second region defining a conduction channel area separating a third region from the first region, an insulated gate adjoining the conduction channel area for controlling current flow between the first and third regions and an injection region for injecting opposite conductivity type charge carriers into the first region, and a protection device for limiting the current through the insulated gate field effect device. The protection device is formed by a fourth region of the opposite conductivity type formed within the first region, a fifth region separated from the first region by the fourth region, a first conductive path connecting the fifth region to the insulated gate for allowing the flow of one conductivity type charge carriers towards the insulated gate and a second conductive path connected to the fourth region.

Abstract: The present application is directed to an improved arrangement for a thin silicon SOI transistor having improved source-high performance especially for bridge type circuits. This structure prevents forward current saturation during such source-high operations, and is made by forming the laterally extending silicon layer with a region of thinner thickness over 1/3 to 2/3 of the length of the drift region, or the lateral linear doping region. The field plate is formed with a separation from the gate electrode, and only extends over the thinned portion of the drift region. The gate electrode and field plate are short-circuited by a metal interconnect.

Abstract: A color display tube is described of the 3-in-line type having a display screen with a stripe-shaped phosphor pattern. The display tube has an internal magnetic shield with a scanning aperture at its gun-sided end for electron beams produced by the electron gun and scanning the display screen. This scanning aperture extends into the short side walls of the shield in a pair of diametrically extreme points at each side to form an oversized scanning aperture with two, and the aperture has a ratio from 1.5 to 1.75 standardized in accordance with the aspect ratio between the long central axis and the short central axis.

Abstract: Radiation-emitting semiconductor diodes in the form of diode lasers or LEDs are used inter alia in information processing systems. There is a particular demand for diodes having a low wavelength. A diode laser which emits at 633 nm is a particularly attractive alternative to a helium-neon gas laser. According to the invention, a method of making a the buffer layer of such a radiation-emitting semiconductor diode comprises aluminium-gallium arsenide, the aluminium content having at least a minimum value belonging to the band gap of the active layer. The minimum Al content is approximately 6 at % for an InGaP band gap of 1.88 eV, and approximately 9 at % for 1.92 eV. As a result, an active layer comprising InGaP emits, for example, at 650 nm while the semiconductor layers still possess a good crystal quality and morphology. When the active layer of a diode laser has a multiple quantum well structure with comparatively thick (approximately 5 nm) well layers, it even emits at 633 nm.

Abstract: The capacitive sensor comprises a sensor body which includes a housing, a conductive front surface and insulation means provided between the conductive surface and the housing; it also comprises a coaxial cable of the type shielded by a mineral insulator for the connection of the conductive surface to a device for measuring the capacitance of the system formed by the conductive surface, constituting a first capacitor plate, and a reference conductive surface which is arranged opposite to and at a given distance from the first plate and which constitutes a second capacitor plate. The body of the sensor is formed by an electrically open extension of the coaxial cable shielded by a mineral insulator in which the free end of the core constitutes the conductive surface, the extension of the sheath constitutes the housing, and the insulation means consist of a mineral insulator.

Abstract: A substrate (2) is formed with a surface layer from a gas phase with a vapour in a device having a reactor chamber (1) and a reservoir (4), which vapour is generated through evaporation of a substance (5) in the reservoir (4) and is conducted to the reactor chamber (1) through a gas line (8) (Chemical Vapour Deposition (CVD)). According to the invention, the vapour is conducted from the reservoir (4) to the reactor chamber (1) in that it is pumped from the reservoir (4) to the reactor chamber (1) by a pump (9) included in the gas line. The use of the pump renders the method very flexible. Thus the vapour flow can be easily adapted through adaptation of a pumping rate associated with the pump. In addition, the vapour flow is not dependent on a process pressure which prevails in the reactor (1).

Abstract: A display tube has a getter structure which is clamped in an aperture of the magnetic shield. The getter structure and the screening cap may be of a simple construction and the getter structure can be replaced in a simple manner so that the display tube can be easily repaired. The getter structure is supported by the cone and the inner wall of the shield.

Abstract: An electric lamp has a lamp vessel provided with a seal, fixed to a first end of a metal sleeve. In a second end of the sleeve an insulator body through which a contact member extends is rigidly secured. To that end the inner channel of the sleeve has a constriction cooperating with the insulator body at a second end face thereof, and an inward projection from the sleeve into a recess in a side face of the insulator body. The recess extends to a first end face of the insulator body. The lamp is of an easily producible construction.

Abstract: The packed electric lamps have a box (1) provided with a base (2) having a base wall (7) and side walls (3, 4, 5, 6) connected thereto. First seats (31) and corresponding second seats (41) are present in the base (2) at a first side wall (3) and a second (4) side wall, in which seats cushion-shaped cartons (50) with electric lamps (20) are held. The packed electric lamps have a comparatively small volume, but the packaging also protects comparatively vulnerable lamps against damage.

Abstract: A method is described of providing a substrate (2) with a surface layer from a gas phase with a vapor in a reactor chamber (1), which vapor is generated through evaporation of a substance (5) in a reservoir (4) and is conducted to the reactor chamber (1) through a gas line (8) (Chemical Vapor Deposition (CVD)). According to the invention, the vapor is conducted from the reservoir (4) to the reactor chamber (1) in that it is pumped from the reservoir (4) to the reactor chamber (1) by a pump (9) included in the gas line. The use of the pump renders the method very flexible. Thus the vapor flow can be easily adapted through adaptation of a pumping rate associated with the pump. In addition, the vapor flow is not dependent on a process pressure which prevails in the reactor (1).

Abstract: A cap electric lamp of the type used in optical systems, for example, or as a vehicle headlamp, includes a glass lamp vessel with a first and a second neck-shaped portion in mutually opposing arrangement with seals through which current supply conductors extend to an electric element arranged in the lamp vessel. A metal sleeve is provided having a longitudinal slot around the first neck-shaped portion holding the lamp vessel with a clamping fit. This sleeve has a welding zone and a first and second clamping zone, each of which has a loop in the shape of an open hair pin. The clamping zones have respective, mutually opposing welding lugs which are interconnected by a welded joint so as to close the sleeve. A metal fixing member is provided with tongues which are welded to the sleeve in a welding zone of the sleeve. A lamp cap of insulating material is connected to the lamp vessel in which the fixing member is fixed and which has contact members to which the current supply conductors are connected.

Abstract: During the manufacture of a semiconductor device in a semiconductor substrate, masks of photoresist are used for selecting given regions to be processed. This photoresist is stripped by subjecting the semiconductor substrate in a processing chamber to an oxygen-containing plasma after-glow, that is passed over the photoresist. In order to limit the penetration of inorganic contaminations released from the photoresist into the silicon oxide layer of the semiconductor substrate, according to the invention, the semiconductor substrate is connected via a first electrode to the positive terminal and via a second electrode arranged at a certain distance therefrom in the processing chamber to the negative terminal of an electric supply source in such a manner that an electrical field is adjusted between the silicon oxide layer and the plasma. The second electrode may be the electrically conducting wall of the processing chamber.

Abstract: In an electroacoustic transducer (1) having a diaphragm (5), behind which a partition wall (24) is situated, which partition wall extends transversely of the transducer axis (9) and is traversed by partition openings (29, 30, 31, 32) having a small cross-sectional area of at the most 0.2 mm.sup.2, and having a mask wall (38) arranged adjacent the partition wall and provided with mask-wall openings (39, 40, 41, 42) of large cross-sectional area, in the other wall (38) being coincident with at least one opening (29, 30, 31, 32) of small cross-sectional area, each opening (29, 30, 31, 32) of small cross-sectional area is situated between two spacer elements (49, 50, 51, 52, 53, 54, 55, 56) arranged between the two walls (24, 38), and each time two spacer elements (49, 50, 51, 52, 53, 54, 55, 56) together with the two walls (34, 38) bound a duct-like gap (57, 58, 59, 60) between the two walls (24, 38) in order to form an acoustic resistance.

Abstract: A method of manufacturing a semiconductor device is set forth, in which a conductive layer (21) and a first insulating layer (22) are provided on a surface (2) of a semiconductor body (1). A conductor track (5) with an insulating top layer (6) is formed in these layers and the top layer (6) is formed in a first insulating layer (22) by means of a first etching treatment. Further, while masking with the top layer (6), the conductor track (5) is formed in the conductive layer (21) by means of a second etching treatment, after which the conductor track (5) is provided with a side edge insulation (7). The surface (2) and the conductor track (5) with its top layer (6) are covered by a second insulating layer (24), which is then subjected to a third anisotropic etching treatment until this layer (24) has been removed from the surface (2) and the top layer (6).

Abstract: The present invention is directed to a method and thin film transistor having a linear doping profile between the gate and drain regions. This is constructed in a particular manner in order to achieve a thin film transistor having a significantly high breakdown voltage of the order of 700 to 900 volts, much greater than that achieved in the prior art.

Abstract: By arranging a Schottky diode so that it is sensitive to grazing light only in the back-bias mode, a switching element is obtained which, when used in, for example an active matrix LCD display, has a current-voltage characteristic which is comparable to that of a zener diode and can be driven in a reset mode.