Abstract: Radiation-emitting semiconductor diodes in the form of diode lasers or LEDs are used inter alia in information processing systems. There is a particular demand for diodes having a low wavelength. A diode laser which emits at 633 nm is a particularly attractive alternative to a helium-neon gas laser.A radiation-emitting semiconductor diode comprising a semiconductor body with a semiconductor substrate of a first conductivity type on which are present at least a buffer layer of the first conductivity type, a first cladding layer of the first conductivity type and made of InAlGaP, an active layer of InGaP or InAlGaP, and a second cladding layer of the second conductivity type and also made of InAlGaP does not fully meet these demands: either the wavelength is comparatively high owing to the occurrence of an ordered structure, or the morphology and crystal quality of the layers is poor.

Abstract: A reflector lamp has a glass reflector body and a separate neck body which mates with the reflector body. A light-source capsule is insertable into a bore of the reflector body from its base end. A positioning member holds the light-source capsule and is clamped between the neck and reflector bodies to secure the light-source capsule in the reflector body. The reflector and neck bodies have surfaces which cooperate with the positioning member to position the light source capsule at the focus of the reflector when the reflector body, capsule and positioning member, and neck body are stacked together.

Abstract: An image detector (1) has a first substrate (10) carrying an electromagnetic radiation conversion layer (11) for converting incoming electromagnetic radiation (A) with a first range of wavelengths into outgoing electromagnetic radiation (B) with a second different range of wavelengths and a photodetector array (21) is carried by a second substrate (20) and responsive to the second range of wavelengths for detecting outgoing electromagnetic radiation (B) emitted by the layer (11). The second substrate (20) is mounted to the first substrate (10) by a mounting arrangement (40) defining an insulative space (50) which provides good electrical isolation between the photodetector array (21) and the electromagnetic radiation conversion layer (11).

Abstract: A color cathode ray tube of the type having a color selection electrode arranged in front of the display screen, is characterized in that the inner surface of the screen exhibits a deviation from an arc shape along the long X axis such that, in operation, the effect of doming is reduced. Preferably, the deviation decreases as the distance to the long axis increases. In an embodiment, the inner surface also exhibits a deviation from an arc shape along the short y-axis.

Abstract: A cathode ray tube comprising a curved substantially rectangular display window, the outside surface and/or inside surface of the display window being given by:z=f(X, Y)where each point situated off the x-axis and the y-axis complies with the formula-.sqroot.(z.sub.xx z.sub.yy)<z.sub.xy /signXY<0.wherez.sub.xx =.differential..sup.2 z/.differential.X.sup.2,z.sub.yy =.differential..sup.2 z/.differential.Y.sup.2 andz.sub.xy =.differential..sup.2 z/(.differential.X.differential.Y)signXY=+1 for X*Y>0, andsignXY=-1 for X*Y<0.An improved reflection image of linear light sources is obtained.

Abstract: A method is set forth of removing a liquid (3) from a surface (2) of a substrate (1), which is placed in a centrifuge (4) and is then subjected therein to a rotary movement, the substrate being rotated at such a speed that the liquid is centrifuged from the surface. According to the invention, the substrate is brought into contact in the centrifuge with a vapour of a material which is miscible with the liquid and which, when mixed therewith, yields a mixture having a surface tension which is lower than that of the liquid. Due to this step, the quantity of material remaining on the surface is strongly reduced.

Abstract: An incandescent lamp having a filament with an integral support portion between its ends which bears against the lamp envelope for supporting the filament therein. The integral support portion includes a length of electrically conductive support wire enclosed within the filament, the filament being continuously coiled over the entire length of said support wire. Accordingly to a favorable embodiment, the support wire is a retained length of winding mandrel.

Abstract: In the method according to the invention, the upper and thicker of two semiconductor layers is etched by means of a selective and preferential etchant, substantially no underetching occurring with respect to the mask. Subsequently, the lower and thinner semiconductor layer and a part of the upper semiconductor layer are converted by a substantially non-selective anodic oxidation into semiconductor material oxides, which are removed by means of an etchant which is non-selective with respect to the oxides formed, but is selective with respect to the semiconductor materials. As a result, mesas are obtained having a substantially flat side wall, the lateral dimension of these mesas being accurately determined by the size of the mask. Thus, particularly favourable results are obtained, especially in the InP/InGaAsP material system. The method according to the invention can be used very advantageously when the thinner layer forms part of a so-called multilayer quantum well structure.

Abstract: The invention relates to an integrated circuit card comprising a card support (130) which has a cavity (101) in which a vignette (200) is fixed, which vignette (200) comprises a circuit support (20, 40) and a circuit (10) arranged on a lower surface of the circuit support facing towards the interior of the cavity (101), the circuit (10) being positioned opposite a portion of a bottom (100) of the cavity (101). The bottom (100) has at least two weakenings (104) situated on either side of a bridge-portion (103) of the bottom.

Abstract: An electric lamp having a cap (10) of synthetic resin is suitable for use on a printed circuit board (6). The cap (10) has resilient arms (15) extending parallel to a plane (8) through the axis (2) of the lamp vessel (1). The holder portion (11) of the cap (10) holding the lamp vessel (1), and the arms (15) can clamp a p.c.b. (6) in between them. Means (19, 21) may be present to keep the lamp fixed in an opening (9) in the p.c.b. (6) or at an edge thereof. The lamp requires little space on a p.c.b.

Abstract: A device for positioning a body (5) by means of at least one pair of electromagnets (13, 15). A position sensor (29) measures the size of an air gap (23) between one of the electromagnets (13, 15) and a guide beam (1). An output signal of the position sensor (29) is applied to an electronic control unit (35) which passes a control current through the electromagnets (13, 15) in dependence on a difference between the measured and a desired size of the air gap (23). In one embodiment an electrical switch (53) is connected between the control unit (35) and the two electromagnets (13, 15) controlled by the control unit (35), applying the control current to only one of the two electromagnets (13, 15) in dependence on the polarity of a control signal from the control unit (35).

Abstract: A color display tube is set forth comprising a color selection electrode which is suspended from supporting elements in the corners of the display window of the color display tube. The suspension elements used to suspend the color selection electrode from the supporting elements comprise a resilient element which encloses an angle .alpha. with the normal to the center of the display window. The angle .alpha. (in degrees) is defined by:.alpha.= 90-x/2- .delta.where x is the maximum deflection angle of the electrons in the color display tube, and6.5<.delta.<1.5.In the case of a 110.degree. tube, 28.5.degree.<.alpha.<33.5.degree. . By virtue thereof, the effect of overall doming is substantially equal to the effect of ambient doming, as a result of which the average picture quality is improved.

Abstract: An antireflective coating layer 22 is applied to a substrate 20, the coating layer having a refractive index gradient such that the refractive index decreases in the direction from the substrate surface 24 to the outside surface 26 of the coating layer. An organic solution of an alkoxide starting material is provided on the substrate and is converted into a gel in situ by means of a reaction with water, which gel is subsequently dried. During the formation of the gel the reaction conditions are varied in such a manner that a non-porous gel is formed in which the degree of crosslinking of the gel material increases in the direction from the substrate surface to the outside surface of the coating layer.

Abstract: The luminaire for providing a primary (10) and a secondary light beam (14) comprises reflector means (9) and a lamp holder (7) within a housing (1) having a window (2) through which the primary beam passes. Remote from the window (2), the reflector means are provided with an opening (11) for a secondary beam (14). A side wall (3) of the housing (1) has a window through which the secondary beam (14) is reflected to the outside by a reflector (15). The window (13) is provided with a refractor (12) to spread the secondary beam (14). The luminaire has a color filter (11) in the path of the secondary beam and provides an even appearance of a panel illuminated by that beam.

Abstract: The invention relates to an integrated circuit connected via a first connection conductor (61) to a first contact area. Between the first connection conductor (61) and a second connection conductor (63), a protection element (8) is connected, which protects the circuit especially from electrostatic discharges. The protection element (8) comprises an active zone (81), which is covered with metal silicide (15) and forms a pn junction (86) with the adjoining part (83) of the semiconductor body (10). On the metal silicide (15), the active zone (81) is provided with an electrode (16), through which the zone (81) is connected to the first connection conductor (61). The use of metal silicide in the integrated circuit in itself has great advantages, but in the protection element the metal silicide layer is found to give rise to a considerably lower reliability. The invention has for its object to obviate this disadvantage without it being necessary to modify the manufacturing process.

Abstract: The adhesion of electroless copper to a substrate (1) for a conductor pattern can be improved by applying a SiO.sub.2 layer (3) on which a thin metal pattern of, for example, TiW (51) is provided. Anchors are formed on the surface by subjecting the SiO.sub.2 layer to an underetching treatment. The electroless copper (9) grows around these anchors and, hence, adheres to the substrate.

Abstract: An improvement in a self-passivated high voltage semiconductor device is set forth with a thinned SOI layer having a linear lateral doping region coated with an oxide layer and a field plate being a part of the gate electrode layer. A high voltage SOI semiconductor device is formed having freedom from external electric fields.

Abstract: The present invention provides a method of forming fuse ribbons between conductive layers on a semiconductor device. The formation of these fuse ribbons may be at different levels of multiple level integrated circuits. The fuse ribbons are formed in a more precise manner than can be obtained conventionally. Resistance control can be easily achieved and significant decreases in dimensions and the use of less fuse material can be achieved.

Abstract: A device for positioning a body (5) by means of at least two electromagnets (13, 15). A position sensor (29) measures the size of an air gap (23) between one of the electromagnets (13, 15) and a guide beam (1). An output signal of the position sensor (29) is applied to a linear electronic control unit (35) which passes a control current through the electromagnets (13, 15) in dependence on a difference between the measured and a desired size of the air gap (23). An electronic root extractor (37) is connected between the control unit (35) and the two electromagnets (13, 15). An output signal of the root extractor (37) has a value equal to the square root of a control signal coming from the control unit (35). In this way a force exerted by the electromagnets (13, 15) on the guide beam (1) is proportional to the value of the control signal, so that a control is obtained with the linear control unit ( 35) in which the stiffness and bandwidth are independent of the value of the control current.

Abstract: The present invention is directed to a technique for selectively oxidizing trench side walls in a silicon substrate. Each of the side walls can be oxidized individually and to different thicknesses according to the requirements of the trench IC.