Abstract: A lamp/reflector assembly has an electric lamp (10) having a base (13) presenting projections (17-19) which touch an imaginary sphere having its center of curvature coincident with the electrical element (12) of the lamp. The reflector (1) of the assembly has an opening (6) through which the lamp (10) extends, and a convex, spherically curved mounting surface (30) aligned with respect to the opening (6). The mounting surface (30) has its center of curvature substantially coincident with the optical center (4) of the reflector (1). The projections (17-19) of the base bear against the mounting surface (30) and the optical center (4) of the reflector (1) coincides with the electrical element (12), also when the lamp occupies one of a number of positions tilted with respect to the optical axis (3) of the reflector (1).

Abstract: A method of manufacturing a cathode ray tube is provided for comprising a neck portion 4 in which an electron 5 having resilient elements 14 is secured. The method comprises a manufacturing step in which the electron gun 5 is inserted into the neck portion 4 by means of a managing tool 57 which serves to press together the resilient elements 14. Viewed in the axial direction, the managing tool 57 is located outside and clear of the neck portion 4.

Abstract: A method of manufacturing a semiconductor device including both an enhancement (1) insulated gate field effect transistor (IGFET) and a depletion (2) mode IGFET is described. Impurities are introduced into a first region or epitaxial layer (4) of one conductivity type adjacent a given surface (3a) of a semiconductor body (3) to provide, for both the enhancement mode (1) and for the depletion mode (2) IGFET, a second region (5) of the opposite conductivity type adjacent the given surface, a source region (9) of a first conductivity type adjacent the given surface (3a) and surrounded by the second region (5) and a drain region (10) of the first conductivity type having a relatively lightly doped drain extension region (11) adjacent the given surface and extending toward the source region (9).

Abstract: A device for positioning a body (5) by means of at least two electromagnets (13, 15). A position sensor (29) measures the size of an air gap (23) between one of the electromagnets (13, 15) and a guide beam (1). An output signal of the position sensor (29) is applied to an electronic control unit (35) which passes a control current through the electromagnets (13, 15) in dependence on a difference between the measured and a desired size of the air gap (23). An electronic multiplier (47, 59) is connected between the control unit (35) and each of the electromagnets (13, 15), multiplying a control signal from the control unit (35) by the output signal from the position sensor (29). In this way a force exerted by the electromagnets (13, 15) on the guide beam (1) depends exclusively on the value of the control signal and not on the size of the air gap (23), so that a position-independent control is obtained.

Abstract: A semiconductor device comprises a semiconductor body (1) of silicon having a monolithic integrated circuit with a field oxide pattern (2) having at least one protection element (T2) having at least one active zone (4) of a first conductivity type, which adjoins at least in part the field oxide (2) and forms with the adjoining silicon region (5) of the second opposite conductivity type a pn junction (6). The active zone (4) is contacted with an electrode layer (7), which is connected to a point (G) of the semiconductor device to be protected against static discharge. The electrode layer (7) consists of a metal silicide. According to the invention, the metal silicide (7) also extends onto the field oxide (2) adjoining the active zone (4) over a certain distance, which is preferably at least 0.5 .mu.m.

Abstract: The HID lamp, suitable for use as a vehicle headlamp, includes a lamp cap having a first, central recess, a second, annular recess surrounding the central recess, and a third recess separated from the first and second recesses. The recesses accommodate a first end of the discharge vessel and a first current supply conductor, a fixation member, and second current supply conductor, respectively. The fixation member is frictionally fixed in the annular recess by resilient tongues and is welded to a clamping member holding a sealed end of the discharge vessel. The lamp construction allows for adjustably mounting the discharge vessel to the lamp cap and avoids harmful and disadvantageous electrical high-voltage and high-frequency effects through electrical isolation of the clamping and fixation members.

Abstract: The capped high-pressure discharge lamp has a lamp cap of insulating material provided with a centrally disposed contact member and with a metal sleeve concentrical thereto. A first end of a discharge vessel is mounted within said metal sleeve and a current supply conductor is attached to said metal sleeve. The rotationally symmetrical geometry of the cap allows insertion of the lamp into a holder in any rotational position.

Abstract: A very thin silicon film SOI device can be made utilizing a bond and etch-back process. In the presently claimed invention, boron dopant is introduced into a surface of a silicon device wafer and the doped surface is bonded onto another silicon wafer at an oxide surface. The device wafer is thinned by etching down to the doped region and, by subsequent annealing in hydrogen, boron is diffused out of the silicon surface layer to produce very thin SOI films.

Abstract: An arrangement for holding together a package of boards to be used in the manufacture of printed circuits by applying glue to an edge of the package or by applying glue into holes formed in the boards.

Abstract: The electric lamp has a lamp vessel (1), which is secured to a cylindrical collar (20). A mounting member (40) is rotatably coupled to the collar (20), in that an end portion (41) thereof which is provided with a groove (42) projects into the collar (20) and in that the collar has hooks (21) gripping into the groove (42). The groove (42) has widened and deepened portions (42') extending to outside the collar (20), giving a special tool access to the hooks (21) to disengage them from the groove (42).

Abstract: An analytical instrument, for example an atomic absorption spectrophotometer, comprises means for measuring the absorbance of a plurality of standards of known concentration (100) and plotting the measured absorbance against concentration (101). A straight line is fitted to the plotted points (102) and a quality co-efficient calculated (103). If the quality co-efficient is acceptable (104) the calibration line is used for measurement of samples (105). If not, then the slope of the line joining each point to the origin is determined and if the slopes are random (107) then a robust regression technique is used to fit the calibration line (108). If outliers are then detected (109) it is determined which points are outliers (110) and appropriate action taken, for example to restrict the range if the last point(s) is/are outliers (111).

Abstract: The invention relates to an arrangement (10) for detecting a moved ferromagnetic element (16) comprising a magnet (11), to which a sensor (14) is assigned on one of its pole faces (12) at a certain distance from the moved element (16). Such arrangements (10) are known, for example, for detecting the speed of a toothed wheel (16). In such known arrangements (10), the positioning of the sensor (14) on the magnet (11) is critical as far as offset voltages in the stationary condition should be avoided in order to obtain a high sensitivity. For an accurate positioning the magnet (11) of such an arrangement (10) has means for producing at least one magnetic imperfection for symmetrization and parallelization of a magnetic field (17) located in the direction of movement (A) of the moved element (16) and of a perpendicular to the pole face (12) for forming a mounting zone (24) free from sensor signal voltage for the sensor (14).

Abstract: A lamp holder has a housing which comprises a base part and a cover part. The cover part, which has contact holes to receive terminals of a high pressure gas discharge lamp to provide access to contact members, is integral with a partition wall which extends inside and outside of the housing between the contact holes. The partition wall which divides the housing into chambers extends into a recess in the base part. The cover part and the base part form curved channels through which electric cables are led to respective contact members. As a result of these measures, the risk of breakdown is avoided, yet the lamp holder structure can be compact.

Abstract: A device for detecting data relating to the passage of vehicles on the road including a piezoelectric effect cable and a cylindrical metal tube having an inside diameter which is larger than the outside diameter of the piezoelectric cable with the space between the cable and inner walls of the tube being filled with a compacted metal oxide power.

Abstract: A method of manufacturing a semiconductor device comprising a lead frame (2A-2I) and a semiconductor crystal (3) provided on one of the conductors (2C) and comprising at least one semiconductor switching element, and electrically conducting connections (4A-4I from the crystal (3) to the conductors (2). The conductors (2) are stamped from a metal strip, after which the tag tips (2a) are coined between a coining die (8) and an anvil (6) to remove irregularities. After that, the conducting connections (4A-4I) are secured to the tag tips (2a) by ultrasonic welding. According to the invention, the anvil surface (5A) and the die surface (7) parallel thereto enclose a downward angle (.alpha.) with the adjoining portion (5B) of the anvil surface, which angle is preferably at least 0.50 and at most 5.degree..

Abstract: A reflector lamp having a lens with an annular surface portion which surrounds a central stippled portion. The annular portion includes a plurality of beam forming elements in the form of oblique flutes which extend at an acute angle to respective radius through the optical axis. According to a preferred embodiment, the flutes are also curved in the plane of the lens surface according to an arc of circle.

Abstract: A testing apparatus for a high-frequency integrated circuit chip for transporting the high-frequency input/output signals of this circuit by means of high-frequency lines of adapted characteristics impedance to measuring apparatus, is characterized in that it comprises:a first subassembly constituted by an insulating or dielectric substrate carrying on the one hand the integrated circuit chip fixed on one of its surfaces and on the other hand a network of high-frequency lines of the coplanar type formed on the same surface (designated as front surface) and arranged according to a geometric configuration suitable to transport the signals emitted by the inputs/outputs of the integrated circuit to the peripheral regions of the substrate, and a second subassembly for receiving the substrate provided with the integrated circuit and with the co-planar network with, this second subassembly further having means for producing a pressure on the mass regions of the coplanar network on a mass surface of this second subas

Abstract: The invention provides a method by which a transparent defect (3) in a lithographic mask (1) can be effectively restored in a simple manner. For this purpose, the mask (1) is provided with a photosensitive layer (4) and is introduced into a solution of a metal ion (5). Subsequently, the mask is exposed at the area of the defect. The photosensitive layer (4) is capable of depositing the metal ion in the form of metal under the influence of the radiation (6) supplied. According to the invention, the exposure is continued until such a quantity of metal (7) has been deposited that the radiation can no longer penetrate to the photosensitive layer (4). At that instant, the metal deposition is stopped so that overgrowth of the metal deposit (7) is automatically counteracted in a simple manner.

Abstract: The invention relates to a method of manufacturing a semiconductor device by means of a cyclical epitaxial process from a gas phase by which alternate monoatomic layers of the III atom and the V atom of a III-V compound are formed. Layers of very good quality are obtained when atomic hydrogen is conducted to the substrate on which epitaxial growth takes place during a part of each cycle in which the gas phase is free from a compound of the III atom.

Abstract: Apparatus and method is set forth for treating a flat substrate (10), more particularly a semiconductor wafer in the manufacture of integrated circuits, under reduced pressure comprising a vacuum chamber (2a, 2b) provided with a substrate support (11) having a body (11a) with heating and/or cooling means (12) and a supporting surface (11b) at which a plurality of injection openings (20) is present communicating with an injection space (12) and a supplementary gas inlet (28), through which injection openings a gas is supplied between the substrate and the supporting surface for forming a heat-exchanging gas cushion therebetween.