Abstract: A reference cell layout for use in a 1T/1C ferroelectric memory array includes a transistor of a first polarity type having a gate coupled to a reference word line and a current path coupled between a bit line and an internal cell node, a transistor of a second polarity type having a gate coupled to a pre-charge line and a current path coupled between a source of power supply voltage and the internal cell node, a shunt reference word line extending across the reference cell that is electrically isolated from the reference word line, the pre-charge line and the transistors within the physical boundary of the memory cell, and a ferroelectric capacitor coupled between the internal cell node and a reference plate line.

Abstract: A method of driving a selected plate line segment in a 1T/1C memory, the method including the steps of logically combining an odd word line signal and an even word line signal to form a first logic signal, logically combining the first logic signal with a plate clock signal to form a second logic signal, latching the second logic signal, and driving the selected plate line segment with the latched second logic signal.

Abstract: A sense amplifier cell layout for use in a 1T/1C ferroelectric memory array includes a first sense amplifier having two input/output nodes for receiving a first bit line signal and a first inverted bit line signal and a second sense amplifier having two input/output nodes for receiving a second bit line signal and a second inverted bit line signal, wherein the combined width of the first and second sense amplifiers is substantially the same as the width of two columns of 1T/1C memory cells used in the array.

Abstract: A lead zirconate titanate ferroelectric film used as the dielectric layer in a ferroelectric capacitor is doped with calcium and/or strontium, and the lead composition selected to improve data retention performance. The chemical formula for the ferroelectric film is: (Pb.sub.v Ca.sub.w Sr.sub.x La.sub.y)(Zr.sub.z Ti.sub.(1-z))O.sub.3 ; wherein v is ideally between 0.9 and 1.3; w is ideally between 0 and 0.1; x is ideally between 0 and 0.1; y is ideally between 0 and 0.1, and z is ideally between 0 and 0.9. In addition, the chemical composition of the ferroelectric film is further specified in that the measured opposite state charge at a specific time and temperature of the ferroelectric capacitor is greater than eight micro-Coulombs per square centimeter, and the rate of imprint degradation is less than fifteen percent per decade.

Abstract: A reference cell for a 1T/1C ferroelectric memory includes a transistor of a first polarity type having a gate coupled to a reference cell word line, and a current path coupled between a bit line and an internal reference cell node, a transistor of a second polarity type having a gate coupled to a pre-charge line, and a current path coupled between a source of supply voltage and the internal reference cell node, and a ferroelectric capacitor coupled between the internal reference cell node and ground.

Abstract: A single integrated circuit for an RF/ID transponder includes a nonvolatile memory portion, which is ideally a ferroelectric memory, digital logic, digital interface circuitry, and differential analog driver circuitry for driving an antenna that is contained within the RF/ID transponder, but external to the integrated circuit. In series with each leg of the differential analog driver circuitry, and also fabricated on the single integrated circuit, are two groups of serially connected resistors. All circuit nodes associated with the resistors are connected to a signal level control logic block that is in communication with the on-chip digital logic block. The signal level control logic block is used to selectively control the output resistance of the driver circuitry such that a proper balance between incoming and outgoing signal levels is achieved.

Abstract: A ferroelectric capacitor includes a bottom electrode, a top electrode, and a ferroelectric layer located between the top and bottom electrodes that extends to completely encapsulate the top electrode, except for a contact hole to allow metalization of the top electrode. The total encapsulation of the top electrode reduces the sensitivity of the ferroelectric capacitor to hydrogen and thus improves electrical switching performance.

Abstract: An integrated circuit capacitor and method for making the same utilizes a ferroelectric dielectric, such as lead-zirconate-titanate ("PZT"), to produce a high value peripheral capacitor for integration on a common substrate with a ferroelectric memory array also utilizing ferroelectric memory cell capacitors as non-volatile storage elements. The peripheral capacitor is linearly operated in a single direction and may be readily integrated to provide capacitance values on the order of 1-10 nF or more utilizing the same processing steps as are utilized to produce the alternately polarizable memory cell capacitors. The high value peripheral capacitor has application, for example, as a filter capacitor associated with the on-board power supply of a passive radio frequency ("RF") identification ("ID") transponder.

Abstract: A dual-level metalization method for ferroelectric integrated circuits includes the steps forming a planarized oxide layer over a partially formed integrated circuit ferroelectric device, forming a cap layer over the planarized oxide layer, forming vias into the planarized oxide layer and cap layer to provide access to the desired first-level metal contacts, and metalizing the selected first-level metal contacts with second-level metal. The cap layer can be doped or undoped titanates, zirconates, niobates, tantalates, stanates, hafnates, or manganates such as doped and undoped PZT (lead zirconate titanate), BST (barium strontium titanate), or SBT (strontium bismuth tantalate).

Abstract: A cross-coupled sense amplifier includes a voltage-compensating balancing resistor serially connected between the drain of one of the P-channel transistors in the sense amplifier and the corresponding sensing/bit line node. The value of the balancing resistor is optimized so that the voltage imbalance between the P-channel transistor is minimized and sense amplifier sensitivity is maximized. A balancing resistor can also be placed in the N-channel transistors in the sense amplifier if desired. The balancing resistor in a typical application is about 100 to 200 ohms and fabricated from polysilicon.

Abstract: A charge pump for increasing the value of an input voltage includes a plurality of serially coupled charge pump stages, wherein each charge pump stage includes a P-channel pass transistor coupled to a first end of a capacitor. The gates of the P-channel pass transistors and the second ends of the capacitors in odd-numbered charge pump stages receive a first phase clock signal, and the gates of the pass transistors and the second ends of the capacitors in even-numbered charge pump stages receive a second phase clock signal, except that the second end of the capacitor in the last charge pump stage is coupled to ground. To increase the value of the capacitors in an integrated circuit embodiment all of the capacitors, except for the capacitor in the last stage, are ideally ferroelectric capacitors. In a preferred embodiment, the charge pump is one component in a regulated charge pump system that also includes a voltage regulator and a controlled oscillator.

Abstract: An enhanced DRAM contains embedded row registers in the form of latches. The row registers are adjacent to the DRAM array, and when the DRAM comprises a group of subarrays, the row registers are located between DRAM subarrays. When used as on-chip cache, these registers hold frequently accessed data. This data corresponds to data stored in the DRAM at a particular address. When an address is supplied to the DRAM, it is compared to the address of the data stored in the cache. If the addresses are the same, then the cache data is read at SRAM speeds. The DRAM is decoupled from this read. The DRAM also remains idle during this cache read unless the system opts to precharge or refresh the DRAM. Refresh or precharge occur concurrently with the cache read. If the addresses are not the same, then the DRAM is accessed and the embedded register is reloaded with the data at that new DRAM address.

Abstract: A method of operating a 1T/1C ferroelectric memory having a memory cell coupled to a word line, a bit line, and a plate line, includes the steps of turning on the word line, energizing the plate line to establish a charge on the bit line, turning off the word line, and sensing the charge on the bit line while the word line is off.

Abstract: A ferroelectric capacitor includes a bottom electrode, a top electrode, and a ferroelectric layer located between the top and bottom electrodes that extends to completely encapsulate the top electrode, except for a contact hole to allow metalization of the top electrode. The total encapsulation of the top electrode reduces the sensitivity of the ferroelectric capacitor to hydrogen and thus improves electrical switching performance.

Abstract: A power-on detect circuit includes: a resistor divider having a first node, a second node coupled to ground, and a center tap; a bandgap circuit for providing a reference voltage; a differential amplifier having a first input for receiving the reference voltage, a second input coupled to the center tap of the bandgap reference voltage circuit, and an output for providing a power-on detect signal; and a suppression circuit for coupling the first node of the resistor divider to a source of supply voltage once the reference voltage substantially achieves a stable reference voltage level. The suppression circuit has an input for receiving a trigger voltage generated in the bandgap circuit, and an output coupled to the first node of the resistor divider.

Abstract: A memory suitable for integration having a memory structure where at least one capacitor formed by using a ferroelectric is integrated on a semiconductor device substrate. In a unit cell structure forming the memory, an upper electrode, located at an upper position among electrodes constituting the capacitor, is directly connected to a high density diffusion layer constituting a MOS transistor.

Abstract: A voltage boost circuit allows a reference input voltage to be boosted in a manner that is less sensitive to variations in power supply voltage levels, temperature, and semiconductor process used. A nominal boost voltage of approximately 1.5 volts is supplied, even at very low power supply voltages. A boost voltage less than 1.5 volts is supplied down to power supply voltages of approximately 1.8 volts.

Abstract: A power-on detect circuit includes: a resistor divider having a first node, a second node coupled to ground, and a center tap; a bandgap circuit for providing a reference voltage; a differential amplifier having a first input for receiving the reference voltage, a second input coupled to the center tap of the bandgap reference voltage circuit, and an output for providing a power-on detect signal; and a suppression circuit for coupling the first node of the resistor divider to a source of supply voltage once the reference voltage substantially achieves a stable reference voltage level. The suppression circuit has an input for receiving a trigger voltage generated in the bandgap circuit, and an output coupled to the first node of the resistor divider.

Abstract: An iridium oxide local interconnect method for a ferroelectric memory cell includes the steps of forming a conductive layer that extends from a source/drain contact of the transistor proximate to an electrode contact of the ferroelectric capacitor and forming an iridium oxide local interconnect extending from the source/drain contact of the transistor to the electrode contact of the ferroelectric capacitor. The conductive layer is laterally terminated not less than one-half micron from the electrode contact of the ferroelectric capacitor. The conductive layer can include an upper iridium layer and a bottom titanium nitride layer, or can include a single layer of completely reacted titanium nitride. After the local interconnect is formed a top oxide layer is deposited. A late recovery anneal is then performed in oxygen at an elevated temperature to rejuvenate the electrical characteristics of the ferroelectric capacitor. Finally, a bit line contact is opened and metalized.

Abstract: An EDRAM device includes an EDRAM memory array on a semiconductor chip. A row enable signal generator and a column address latch signal generator are provided on the same semiconductor chip for generating row enable and column address latch signals for application to the EDRAM memory array.