Abstract: Disclosed is a thin film transistor used to manufacture a highly integrated SRAM or LCD and its manufacturing method, and more particularly, to a thin film transistor having a multi-layer stacked channel in order to increase the current flow during the thin film transistor's ON state by securing a enough channel width despite of the limited area; A thin film transistor on which a channel had been deposited in accordance with the present invention can be manufactured in a small area; accordingly, a highly integrated SRAM can be manufactured by decreasing the area of the unit cell of SRAM. Also, the resolution can be enhanced by decreasing the area occupied by the thin film transistor in the panel during the manufacturing process of the LCD.

Abstract: An improved combustion and anti-pollution device for a motor vehicle having an internal combustion engine is shown in which the device reaches optimal operating temperature and thus maximum effectiveness almost at the same instant as the starting of the vehicle. In an embodiment of the pollution control transformer of the present invention, the basic components include a casing, a rod, a coil, an iron disk, a disk-shaped permanent magnet, and components for controlling the operating temperature of the coil. The components for controlling the operating temperature of the coil can be active heat control components, which include a heating filament, and passive heat control components, which include heat insulation materials such as silicon fiber resin materials surrounding the coil of the device.

Abstract: A mixture of carbon nanotubes and impurity carbon materials, which include carbon nanoparticles and may possibly include amorphous carbon, is purified into carbon nanotubes of high purity by utilizing a significant difference in oxidizability between the nanotubes and the nanoparticles. The mixture is pulverized and heated in the presence of an oxidizing agent at a temperature in the range from 600.degree. to 1000.degree. C. until the impurity carbon materials are oxidized and dissipated into gas phase. The nanotubes remain almost unoxidized except for loss of some lengths from the tube tips. It is suitable to perform the heating in air or oxygen.

Abstract: In an ATM network using a burst-level band-width allocation, a source terminal reserves, before a burst transmission, band-widths according to a peak rate of the burst and then sends the burst therethrough. When the transmission is finished, the band-widths are released. Where there exists a link to which the peak rate is not assigned, a non-reserving acknowledgement signal (NACK) is sent to the terminal and the reserved band-widths are released. On receiving the NACK, the terminal allocates a band-width with peak rate lower than that of the first request after a back-off time has elapsed, thereby minimizing the probability of a blocked transmission. The source terminal declares a minimum band-width together with the peak rate (maximum band-width) in the band-width request operation. Each node allocates the peak rate when the remaining band-width of a link controlled by the node is sufficient to allocate the peak rate.

Abstract: A molding die for sealing a semiconductor element with a resin includes an upper and a lower mold half. A leadframe having a resin passage aperture is sandwiched between the lower mold half and the upper mold half. The lower mold half has a lower runner space, a lower cavity, and a lower gate provided between the lower runner space and the lower cavity. The upper mold half has an upper resin well, an upper cavity, and an upper gate provided between the resin well and the upper cavity. The length of the upper resin well in the direction of the flow of resin is equal to or greater than the distance from the lower gate to the front edge of a lower runner rising slope, to thereby obtain a final product which is free from resin burrs formed in the upper resin well.

Abstract: In a transceiver circuit module, a transmitting circuit section and a receiving circuit section are located on a board, and the transmitting circuit section and the receiving circuit section are electromagnetically isolated from each other by an electromagnetic shield wall.

Abstract: A method of manufacturing a semiconductor device containing a ruthenium oxide includes the step of dry-etching the ruthenium oxide using a gas mixture containing oxygen or ozone gas and at least one material selected from the group consisting of fluorine gas, chlorine gas, bromine gas, iodine gas, a halogen gas containing at least one of the fluorine, chlorine, bromine, and iodine gases, and a hydrogen halide.

Abstract: The invention relates to the use of an extract of prunella or at least one prunella saponin. This extract or this saponin is used for the preparation of a cosmetic or pharmaceutical and/or dermatological composition. Said composition makes it possible to regulate the renewal and differentiation of the keratinocytes and has an anti-aging activity, an anti-inflammatory activity, especially in inflammations caused by ultraviolet radiation, or an anti-allergic or anti-free-radical activity. It also enables the epidermis of normal skin to be kept in good condition, especially by maintaining the functional role of the skin, in particular as a protective barrier, and makes it possible to prevent or treat dry skin, especially ichthyotic skin, and to treat psoriasis.

Abstract: A semiconductor device has a capacitive element with excellent leak current characteristics which has a tungsten film with a roughened surface for increasing the surface of a lower electrode. A capacitive element for use in a VLSI memory circuit such as a DRAM or the like is fabricated by forming a thin, roughened tungsten film selectively on a surface of a lower electrode of polysilicon by chemical vapor-phase growth and forming a capacitive insulating film on the surface of the lower electrode of polysilicon, densifying the capacitive insulating film, and forming an upper electrode of a metal element.

Abstract: The present invention presents a monomer including a vinyl group, which monomer is represented by a general formula (I) wherein R.sub.1 represents one of a hydrogen atom, a tert-butoxycarbonyl group, a tetrahydropyran-2-yl group, a tetrahydrofuran-2-yl group, a 4-methoxytehydropyranyl group, a 1-ethoxyethyl group, a 1-butoxyethyl group and a 1-propoxyethyl group, R.sub.2 represents a hydrocarbon residue including a bridged hydrocarbon group and having a carbon number ranging from 7 to 12 both inclusive, and R.sub.3 represents one of a hydrogen atom and a methyl group.

Abstract: In an organic thin film EL device comprising an anode layer, a cathode layer, and a complex layer including hole injection material and luminescent material, an anode interfacial layer is formed between the anode layer and the complex layer. The anode interfacial layer includes quinacridone derivative.

Abstract: A FET has comb-shaped electrode assemblies for source, drain and gate of the FET. Each of the source and drain electrode assemblies has a plurality of electrodes contacting the active region of the FET and formed as a first layer metal laminate, and a bus bar connecting the electrodes together to a corresponding pad and formed as a second layer metal laminate. The gate electrode layer has a plurality of gate electrodes contacting the active layer in Schottky contact, a gate bus bar connecting the gate electrodes together, a gate pad connected to the gate bus bar. The gate bus bar is formed as a first layer metal laminate intersecting the stem portion of the comb-shaped source bus bar. The two-layer metal structure of the FET reduces the number of photolithographic steps and thereby fabrication costs of the FET.

Abstract: Growth hormone releasing hormone (GHRH) receptor binding has been characterized using a unique binding assay utilizing iodinated GHRH probes. Photoaffinity GHRH probes have been constructed which allow for photolabeling and characterization of the receptor. In addition, high affinity biotinylated GHRH analogs have been constructed. Solubilization of GHRH-R/GHRH complexes and extraction of specifically bound GHRH using a mild detergent solution, followed by affinity chromotography, leads to a substantially purified GHRH-R isolate. Electrophoretic treatment of the GHRH-R isolate produces GHRH-R of sufficient purity to conduct sequencing of the receptor. Cloning of a gene encoding for polypeptides (protein or fragments thereof) having GHRH-R activity is accomplished using a bacterial host, and the cloned gene is expressed in a mammalian cell line.

Abstract: The present invention relates to a field effect transistor with high speed and excellent high frequency characteristics. A hetero junction field effect transistor, comprising a first semiconductor layer that contains In, a second semiconductor layer that contains In whose composition ratio is smaller than that of the first semiconductor layer, and a third semiconductor layer whose electron affinity is smaller than that of the first semiconductor layer, wherein the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer are successively disposed in the order, and wherein the thickness of the second semiconductor layer is equal to or larger than the thickness of two monolayers thereof and less than 4 nm. A current of this field effect transistor flows in the first semiconductor layer 3 and the second semiconductor layer 4 of the transistor.

Abstract: In a method for manufacturing an asymmetrical LDD type MOS transistor, low concentration impurity diffusion regions are formed within a semiconductor substrate on both sides of a gate electrode. Then, sidewall insulating layers are formed on both sides of the gate electrode, and, after that, high concentration inpurity diffusion regions are formed within the semiconductor substrate on both sides of the sidewall insulating layers. Then, one of the sidewall insulating layers is removed simulataneously with formation of contact holes in an interlayer formed on on the entire surface. Finally, impurities are implanted with a mask of the interlayer, to enlarge one of the high concentration impurity diffusion regions.

Abstract: An outlet box for mounting a fixture, such as a fan or a light, from a ceiling. Adjustable hanger screw mountings permit the mounting of a wide variety of fixtures to the box. Adjustability is attained by attaching the hanger screw mountings to the ends of a mounting arm which is pivotally connected to a top plate of the outlet box.

Abstract: A laboratory refrigerator, in particular a refrigerated incubator, in which an inner basin surrounding the useful storage volume is surrounded by an outer basin. The air in the useful storage volume is circulated via a chamber formed between the inner basin and the outer basin and re-enters the useful storage volume via apertures in the side walls of the inner basin. Heating elements are provided in the chamber for controlling the temperature of the circulating air and labyrinthine plate evaporators are provided on the outside of the side walls of the outer basin.

Abstract: A business form with adhesive for window mounting comprises a back sheet and a front sheet. The top edge of the top sheet is coextensive with the top edge of the bottom sheet, but the bottom edge of the top sheet is inwardly offset from the bottom edge of the bottom sheet. A line of adhesive is provided to adhere the back surface of the top sheet to the front surface of the back sheet. The adhesive surfaces of first and second adhesive strips overlap the top and bottom edges, respectively, of the back sheet to define respective top and bottom adhesive areas extending outwardly of the top and bottom edges of the back sheet. First and second releasable liner strips are substantially coextensive with and adhesively attached to the top and bottom adhesive areas, respectively, at the adhesive surfaces. Both sheets have a line of tractor feed holes positioned below the first adhesive strip.

Abstract: The invention provides a method for growing GaAs crystals wherein GaAs crystal growth is carried out by means of an equipment by which Indium containing crystals were grown before carrying out the GaAs crystal growth, and the GaAs crystal growth is caused by thermal organic metal decomposition technique using trimethyl gallium as a source of gallium (Ga).