Abstract: A method for preparing iodoalkynylcarbamates exhibiting little or no discoloration or yellowing when incorporated into coating compositions, such as paint compositions, and exposed to sunlight. An alkynol is reacted with freshly distilled isocyanate prepared within 24 to 120 hours prior to reaction with the alkynol, and the resulting product is iodinated to form an iodoalkynylcarbamate that exhibits little or no discoloration or yellowing when incorporated into coating compositions, such as paint compositions, and exposed to ultraviolet light.

Abstract: A process for producing a thin film transistor suitable to a high integrated static ram (SRAM) or a liquid crystal display, thereby improvements in a leak current and an operating current along with a process for the production of a thin film transistor. The process comprises treating a channel polysilicon layer of a TFT structure with oxygen plasma to eliminate the drawbacks generated in an interface between the channel polysilicon layer and a gate insulating film and in the channel polysilicon layer itself. There may be a reduced leak current when switching off the TFT as well as an increased operating current when switching on the TFT. Accordingly, in accordance with the present invention, the characteristics of TFT is greatly improved.

Abstract: A soldering tip comprising 50-95 weight percent uncoated copper particles and 5-50 weight percent iron particles is prepared by a method in which the particles are compacted, sintered and shaped into a soldering tip. The soldering tips are durable, resistant to pitting by molten solder, and thermally conductive.

Abstract: A semiconductor device with bipolar transistors formed in respective island regions in which collector regions of the bipolar transistors do not need to be pulled up to the top of the corresponding island regions and do not need to be contacted with a collector electrode on the top of the corresponding island regions. First and second semiconductor island regions are formed to be buried in a second insulator formed on a first insulator. First and second bipolar transistors are provided in the first and second island regions, respectively. An interconnection conductor for electrically interconnecting collector regions of the first and second transistors is formed in the second insulator and in contact with the collector regions of the first and second transistors. A common collector electrode formed on a third insulator covering the first and second island regions is electrically connected with the collector regions of the first and second transistors through the interconnection conductor, respectively.

Abstract: It is the object of the invention to suppress noises caused by reflections of a ray of light from a light receiving surface of a photodiode chip and inner and outer surfaces of a glass in a semiconductor light receiving apparatus. A construction of a light receiving apparatus is that, a photodiode chip 4 is mounted on a carrier 2 fixed to a stem 1, and a chip 4 is sealed up by a cap 7, which is provided with an opening 7a covered with glass 8. A ray of light transmits through an opening 7a, and incidents on a light receiving surface of a chip 4. A light receiving surface of a chip 4 and an outer surface of a glass 8 are inclined to the optical axis, where directions of inclinations are different to each other. An angle of inclination of a chip 4 is selected such that reflected rays from a chip 4 does not incident on an opening 7a. Accordingly, there is no ray which returns to a light source (not shown), and generation of delayed incidences to a chip 4 can be prevented.

Abstract: It is the object of the invention to provide a field emission cathode apparatus comprising plural electron-emitters which eliminates nonuniformity of electric emission density over an emissive area, controls emission currents by active devices, and improves reliability of the apparatus. P-type silicon 5 and n-type silicon 4 are formed on n.sup.+ -type silicon 6. On n-type silicon 4, an electron-emitter 1 made of Mo is formed, and electron-emitter 1 is surrounded by a grid electrode 2 and an insulator layer 3. N-type silicon 4 serves as a channel region of a junction gate field effect transistor, and a current flowing through it is controlled by a voltage applied to p-type silicon 5. Accordingly, an electron current emitted from electron-emitter 1 is also controlled by this transistor, and by setting up an operation region of this transistor in a saturation current region, nonuniformity of electron emissions from electron-emitters can be improved.

Abstract: An apparatus and method for scanning a carpet is used for detecting tuft defects in the carpet during manufacture. The apparatus or system incorporates a light source for providing light along a width of the carpet; a scanning array for detecting light from the light source passing through the carpet; and control circuit means for controlling the sensor array to scan the carpet and for receiving the output signals from the first and second sensor cells detecting tuft defects in the carpet based on the light passing through the carpet. The scanning array has at least one pair of first and second sensor cells, and is positioned opposite the light source with the carpet passing transversely therebetween. Each of the first and second sensor cells includes first and second sets of sensor elements, and an output node between the first and second sets of sensor elements. The output node outputs a signal detecting tuft defects in the carpet based on an amount of light passing through the carpet.

Abstract: A liquid crystal layer is disposed between a member including a transparent substrate on which pixel electrodes, TFTs, scan lines, and data lines are formed and a member including another transparent substrate over which there are formed two sets of stripe-shaped electrodes to be vertical to each other with an insulating layer inserted therebetween and a uniform transparent conductive layer as an opposing electrode over the stripe-shaped electrodes with an insulating layer inserted therebetween. The stripe-shaped electrodes are arranged, when viewed from above, to occupy gap areas between the pixel electrodes. Sequentially applying voltage pulses to the electrodes beginning at an end portion thereof, a pen input function is achieved according to the electrostatic capacitive-coupling scheme. An active matrix liquid crystal display (AMLCD) having a pen input function is thus obtained at a low cost without deteriorating the display performance.

Abstract: In a wet processing apparatus, an electrolytic cell, a first storing cell for storing anode active water of the electrolytic cell, a first processing cell for processing a target with the anode active water of the first storing cell, a second storing cell for storing cathode active water of the electrolytic cell, and a second processing cell for processing a target with the cathode active water of the second storing cell are provided. Also, a first reactivating feedback path is provided between the first processing cell and an anode region of the electrolytic cell, and a second reactivating feedback path is provided between the second processing cell and a cathode region of the electrolytic cell.

Abstract: In a method for manufacturing an asymmetrical LDD type MOS transistor, low concentration impurity diffusion regions are formed within a semiconductor substrate on both sides of a gate electrode. Then, sidewall insulating layers are formed on both sides of the gate electrode, and, after that, high concentration inpurity diffusion regions are formed within the semiconductor substrate on both sides of the sidewall insulating layers. Then, one of the sidewall insulating layers is removed simulataneously with formation of contact holes in an interlayer formed on on the entire surface. Finally, impurities are implanted with a mask of the interlayer, to enlarge one of the high concentration impurity diffusion regions.

Abstract: A can vending mechanism comprising a module containing three vertically-extending channels arranged front-to-back and dimensioned to vend cylindrical products, such as cans, with their longitudinal axes parallel to the front face of a vending machine to achieve greater product capacity. A sold-out switch is provided in each channel. Each sold out switch is activated when two products remain in escrow at the bottom of its respective channel. The channels are refilled without the use of diverters by dropping new products into the channels. The two products remaining in escrow at the bottom of each channel absorb the shock of the falling products.

Abstract: In a plasma display having a thick bus electrode provided on a transparent electrode which is arranged on a glass substrate, the bus electrode and the transparent electrode are covered by first and second dielectric layers. The first dielectric layer has a softening point higher than that of the second dielectric layer. Otherwise, the first dielectric layer is fired at a temperature lower than a temperature at which the second dielectric layer is fired.

Abstract: In the apparatus and method of the present invention, the solid food to be sterilized is exposed to the steam so that the steam flow directly hits the food. In the another aspect of the invention, the heating and sterilizing chamber for heating and sterilizing the food comprises drain means for draining the unnecessary fluid therefrom. As a result of that, the temperature of the food can be raised uniformly, so that the sterilization of the food without degrading the quality of the food is attainable.

Abstract: Rotation of a steering wheel (7) is transferred to a steering gear (17) via a pipe-like first shaft (2) and a second shaft (3), which is inserted in the first shaft (2) so that transfer of rotation between the two shafts (2), (3) and relative axial movement between the two shafts (2), (3) are allowable. A ball (23) inserted in a through hole (20) formed through the first shaft (2) is held by a recess (21) formed on the outer surface of the second shaft (3), so that a portion of the ball (23) is projected from the outer surface of the second shaft (3). The inner surface of the first shaft (2) is plasticly deformed by the ball (23) by displacing the recess (21) away from the through hole (20) to form a groove (25).

Abstract: A data output buffer comprising a pull-up transistor having an N type-well, the pull-up transistor transferring a supply voltage from a supply voltage source to an output line in response to a logic state of data from an input line, a first PMOS transistor for switching the supply voltage from the supply voltage source to the N type-well of the pull-up transistor in response to a voltage on the output line, and a second PMOS transistor for feeding the voltage on the output line back to the N type-well of the pull-up transistor when the voltage on the output line is higher than the supply voltage from the supply voltage source. According to the present invention, the voltage on the output line can be prevented from being latched up to the supply voltage source when it is higher than the supply voltage from the supply voltage source. Therefore, the data output buffer has an enhanced operation speed and a minimized occupying area in a semiconductor integrated circuit device.

Abstract: There is disclosed a half-tone type phase shift mask consisting of: a transparent substrate; a phase shift pattern capped with a half-tone type light-penetrating pattern, both patterns being provided with a window exposing a predetermined area of the transparent substrate therethrough and the half-tone type light penetrating pattern having a thickness so that it is penetrated by only 5 to 20% of an incident light; and an optically opaque pattern covering all areas of the transparent substrate except for the phase shift pattern capped with the half-tone type light-penetrating pattern and the window, wherein an incident light penetrates only through the window and the phase shift pattern capped with the half-tone type light-penetrating pattern. The half-tone type phase shift mask is capable of preventing light from penetrating undesired areas and thus capable of obtaining a photoresist pattern with a superior smooth profile.

Abstract: A thermo-adhesive product is formed from a backing fabric with a thermo-adhesive layer deposited on its surface. In a preferred embodiment, the thermo-adhesive layer is deposited in a discontinuous fashion as dots. The thermo-adhesive layer is formed of polymers which are non-tacky at ambient temperatures but which become tacky and plastic at a first elevated temperature range which is beneath the critical temperature for the polymeric composition, and which become thermo-setting at a second elevated temperature range which is above the critical temperature. In alternate preferred embodiments, the thermo-adhesive compositions can be cross-linked under the influence of radiation from an electron beam or UV radiation.

Abstract: The trap-state density of a switching transistor of a picture element is reduced by selectively treating only the switching transistor of the picture element part of a liquid display with the plasma hydrogenation treatment, the laser annealing treatment or both thereof. That is, aluminum is sputtered before making an aperture for a contact hole of a thin layer transistor, then a mask aluminum is formed on the active circuit element forming region by patterning only aluminum on the picture element forming region. Then, the plasma hydrogenation treatment is made, and the mask aluminum film is removed by the etching. Following the similar process thereafter, an active circuit integrated liquid crystal display is fabricated. Thereby, the leakage current of the switching transistor of the picture element part can be reduced and decrease of pressure tolerance of transistors constituting the active circuit element and the depletion can be prevented.

Abstract: A semiconductor device containing a first electrode formed under an interlayer insulator film and a second electrode formed on or over the interlayer insulator film. The first electrode is connected to an active region formed at a semiconductor substrate. The second electrode acts as a bonding pad and is connected to the first electrode through the interlayer insulator film. Between the second electrode and the substrate, there is a capacitance-reduction structure composed of an insulator layer having a plurality of hollow spaces arranged at intervals. Due to the capacitance-reduction structure, the dielectric material existing between the second electrode and the substrate contains the hollow spaces therein, resulting in a reduced parasitic capacitance produced using the second electrode, substrate and the dielectric material.

Abstract: A ball bearing cage is formed with pockets each having an inwardly curved spherical pocket face similar to a ball in shape. At least one of the pockets has a protrusion projecting inwardly thereof from one of inner and outer circumferential edge portions of the pocket face. A ball bearing comprises balls retained between inner and outer bearing rings and equispaced circumferentially thereof by a cage. The cage is formed with pockets each having an inwardly curved spherical pocket face similar to the ball in shape, at least one of the pockets having a protrusion projecting inwardly thereof from an edge portion of the face close to the fixed one of the rings.