Abstract: A PTAT current source has first and second current mirror circuits, each comprising a cascode transistor, an output transistor in series with the cascode transistor, and a base current compensating transistor having a control element connected to the cascode transistor on a side away from the output transistor, and a current flow path element connected to a current control element of the output transistor, the cascode transistors of the first and second current mirror circuits having differently sized emitter areas. A resistor is connected between the cascode transistors of the first and second current mirror circuits across which a differential current is developed. An output circuit develops a current in the output transistor of the second current mirror circuit. In one embodiment, a third mirror circuit is provided, to cancel a portion of an emitter current flowing in the output transistor of the second current mirror circuit.

Abstract: An interconnect structure, and method for forming same, is suitable for use in integrated circuits such as SRAM devices. The structure uses masking of a polycrystalline silicon interconnect level to move a P-N junction to a region within a polycrystalline silicon interconnect line, rather than at the substrate. This P-N junction can then be shorted out using a refractory metal silicide formed on the polycrystalline silicon interconnect structure.

Abstract: A memory system that includes a memory array having at least two pairs of data lines, first and second data lines that correspond to columns in the memory array. The memory array also includes two disabling sense amplifier circuits, a first disabling sense amplifier circuit connected to the first data lines and a second disabling sense amplifier circuit connected to the second data lines, wherein the disabling sense amplifier circuits produce output signals and may be enabled and disabled. A selection signal is provided for selectively enabling and disabling the disabling sense amplifier circuits, wherein one pair of data lines may be selected. An amplification circuit connected to the disabling sense amplifier circuits provides for amplifying the output signals from the disabling sense amplifier circuits.

Abstract: A conductive layer is formed over an insulating layer and extending down into a contact opening. An insulating layer is then deposited over the device and in the opening, and etched back to form a plug of dielectric material in the bottom of the opening. An aluminum layer is then deposited over the device and in the opening under such conditions as to cause a substantially complete fill of the opening by the aluminum, and result in a planar surface above the opening.

Abstract: A logarithmic amplifier has first and second mirror circuits, each having active transistors interconnected by a resistor. The current input is applied within one of the mirror circuits so that a logarithmic function thereof is generated for output by an output current mirror circuit. The mirror circuits are similarly constructed with an active transistor, a cascode transistor, and a base current compensating transistor. The cascode and active transistors are connected in series between an input node and a reference potential, or ground, with the base current compensating transistor connected between a supply voltage source and a base of the active transistor. The base of the base current compensating transistor is connected to the reference current input node. Through modification of the basic circuit by injection of an input current to the active transistor with respect to the reference potential, an exponential converter is presented.

Abstract: A comparator system for a cache tag RAM memory that makes use of data bus lines already available on the cache tag RAM. The true data bus lines are connected together at a connection point and form a "wired" connection or configuration. A "wired" connection may be for example, a "wired OR" "wired NOR" "wired AND" or "wired NAND" according to the present invention. The complement data bus lines on the cache tag RAM are connected in a similar fashion. The comparator system is connected to the cache tag RAM data bus lines and generates a hit or miss signal based on the data on the cache tag RAM data bus lines and input data that controls transistors connected to the cache tag RAM data bus lines, resulting in a faster comparison function.

Abstract: An integrated circuit memory is disclosed which has its primary memory array arranged into blocks and which has redundant columns, each of which can replace a column in any one of the blocks. The redundant columns are selected by way of a redundant column decoder, associated with each column. A plurality of redundant sense amplifiers are each associated with selected redundant columns. Each of the redundant column decoders includes a set of address fuses for storing the column address responsive to which its associated redundant column is to be selected, and which are in series with pass gates which are turned on when redundancy is enabled, and turned off otherwise. This arrangement of address fuses and pass gates reduces and balances the loading of the decoder on the address lines, may be implemented with fewer transistors and thus in reduced chip area relative to conventional decoders, and also reduces the propagation delay through the decoder.

Abstract: A method is provided for depositing a silicon nitride layer to protect and isolate underlying layers during wet etching. The silicon nitride layer maintains the integrity of interconnect leads, bond pads, and die boundaries by acting as a wet etch stop. The silicon nitride layer stops the chemicals used in a wet etch from reaching underlying layers in the integrated circuit.

Abstract: Circuitry for producing a transition detection signal of adequate and optimized duration is disclosed. A transition detection circuit is associated with each of the input terminals from which transitions are to initiate an operating cycle, such as precharge and equilibration in a memory access cycle. Each transition detection circuit produces, responsive to a logic transition at its associated terminal, a transition detection pulse. Those transition detection circuits which produce only brief transition detection pulses are coupled to a centralized summing circuit. The summing circuit generates the transition detection circuit from the logical combination of the transition detection circuits, and includes a delay circuit to lengthen the brief incoming transition detection pulse to the desired duration. In this way, a single placement of the summing circuit can be used to optimize the transition detection pulse duration for initiation of the operating cycle of the integrated circuit.

Abstract: According to the present invention, one or more addresses are forced to a logic state to define a smaller, fully functional portion of embedded memory. A first preferred embodiment has a first fuse circuit and a second fuse circuit which control the conduction and the output signal of a transmission gate which passes through an address signal. The output signal of both the first and the second fuse circuits are input signals to logic circuitry which produces a first input signal and a second input signal to the transmission gate. When the first fuse is blown, the address signal is forced to a first logic state and when the second fuse is blown, the address signal is forced to a second logic state. When neither the first fuse nor the second fuse is blown, the address signal is simply passed through the transmission gate. A second preferred embodiment of the present invention has a first fuse circuit, a second fuse circuit, and an inverting stage through which an address signal passes.

Abstract: A clock generator circuit for producing a clock signal while drawing reduced current drain is disclosed. The clock generator circuit includes a crystal oscillator which produces a periodic signal having a relatively small voltage swing, controlled by one or more reference voltages; the reference voltages are preferably produced by a sub-threshold biased voltage reference circuit. The small signal output of the crystal oscillator is applied to the first of a series of frequency divider stages, prior to amplification by a level shift circuit. Each divider stage includes a current switch which switches the current drawn through current divider legs to produce output signals to latches in the divider stage. Each divider stage also includes one or more current source switched latches, each controlled by current sources that are switched by the current switch.

Abstract: According to the present invention, a structure for holding broken select lines in a memory array deselected addresses the prior art problems associated with floating broken select lines, such as standby current and disruption of attached memory cells. The structure is a high impedance device which is placed on the end of select lines so that if a select line is broken during fabrication, the high impedance device will hold the broken end of the select line to the desired deselect voltage. Select lines which have a driver at one end only and are broken during fabrication, but have the high impedance device on the other end, are not allowed to float. The high impedance device is also suitable for select lines which are not broken and previously were anchored at just one end. Suitable high impedance devices include a reverse biased diode, a weak transistor, a poly R memory cell load device, and an ON or OFF TFT memory cell load device.

Abstract: A method for forming integrated circuit structures includes the formation of high-value resistive elements and low resistance interconnect in a single polycrystalline layer. In one embodiment, interconnect regions of the polycrystalline silicon layer are masked, and resistive element regions are partially oxidized to reduce the thickness of the polycrystalline layer in such regions. Resistivity of the interconnect regions may then be reduced by implanting a high level of impurities in them, or by forming a refractory metal silicide layer over the interconnect regions. The oxide formed over the resistive elements during the oxidation thereof protects them from either of the following process steps, so that no masking is required. In an alternative embodiment, silicidation of the interconnect regions of the polycrystalline silicon layer may be performed without the prior local oxidations of the resistive element regions.

Abstract: An integrated circuit package is disclosed, of the type having a pin-fin heat sink attached to the surface. A flat plate is attached to the ends of the pins of the heat sink, to provide a planar surface area of adequate size to allow a vacuum pickup tool to pick and place the packaged integrated circuit, and to receive marking and symbolization.

Abstract: In a high density memory, such as a SRAM, DRAM, EPROM or EEPROM, a hierarchical bitline configuration is utilized such that a number of local bitlines are connected to a master bitline through interface circuitry which connects a local bitline to the master bitline. Local select signals, when set to the appropriate voltage level, couple a local bitline to the master bitline. In addition to reducing the local bitline capacitance that must be driven by memory cells, the hierarchical configuration may provide layout area savings as well.

Abstract: An integrated circuit memory is disclosed which has its primary memory array arranged into blocks and which has redundant columns, each of which can replace a column in any one of the blocks. The redundant columns are selected by way of a redundant column decoder associated with each column, each of which includes a set of address fuses into which an address is programmed, responsive to which its associated redundant column is to be selected. A plurality of redundant sense amplifiers are each associated with selected redundant columns, and are each controlled to begin the sense operation prior to propagation of the address signal through the redundant column decoders and summing circuitry. In the event that the received memory address does not match any of the programmed values in the redundant column decoders associated with a redundant sense amplifier, the sense operation is terminated.

Abstract: According to the present invention, a special operating mode of an integrated circuit device, such as a stress test mode, is entered while the integrated circuit device is powered up in order to avoid the large switching transients from multiple rows and columns being enabled simultaneously which would result if the stress test mode was entered after the integrated circuit device is powered up. Hence, power on reset can not be avoided by waiting until the power-on reset pulse is generated. The power on reset pulse of the integrated circuit device may be overridden or effectively disabled during a stress test mode, such that potential contention between the power-on reset pulse and the test mode signal of the integrated circuit device is eliminated. As a result, crowbar current is accordingly eliminated so that proper state initialization during a stress test mode may be accomplished.

Abstract: A method and circuit for reading a memory array by utilizing dual dynamic sense amplifiers. A first and a second dynamic sense amplifier are connected to an input line and complementary input line. A latch and a clocking circuit are also connected to the two dynamic sense amplifiers. Initially, an equilibrating signal is input into both sense amplifiers. A first clocking signal and a first isolating signal are then input into the first dynamic sense amplifier. The first clocking signal enables the first sense amplifier to read the data on the input and complementary input lines, while the first isolating signal isolates the first sense amplifier from the input and complementary input lines. An output is then provided to the latch based upon the data read by the first sense amplifier. A second clocking signal and a second isolating signal are then input into the second sense amplifier to enable the second sense amplifier to read the data on the input and complementary input lines.

Abstract: A ring counter includes a plurality of latches forming a shift register. A single bit is sequentially clocked through the shift register, so that only one output is active at any time. A logic circuit is connected to the outputs, and monitors the number of outputs which are active. If more than one output should somehow become active at one time, such as during power up, a reset signal is immediately generated to reset a single bit of the counter active. An external reset signal can also be applied to the logic circuit to force a reset of the counter.

Abstract: The regulation of the output voltage of a voltage multiplier driven by a ring oscillator, an inverter of which is substituted by a NOR gate for providing a terminal through which stopping the oscillation, is effected by controlling the oscillation frequency in function of the current delivered by the voltage multiplier by means of a transistor T1 working as a current generator connected in series with a regulating chain of series-connected diodes by biasing the gate of the transistor with a constant voltage Vref, thus imposing a reference current Iref through the transistor. The voltage signal across the transistor is fed to the input of a first inverter with a preset triggering threshold and the output signal of the inverter is fed through an amplifying and phase-regenerating stage to said terminal for stopping the oscillation of said NOR gate of the ring oscillator.