Abstract: A method for forming a self-aligned contact utilizes a thin insulating layer formed on the upper surface of a conductive layer. A barrier layer is deposited over the insulating layer, and gate electrodes are then defined. Sidewall spacers are formed along the vertical sidewalls of the gate electrodes. During formation of the sidewall spacers the barrier layer protects the gate electrodes. A second insulating layer is then deposited and a via is opened to the substrate. A contact can now be created by depositing conductive material into the via.

Abstract: A structure and method for fabricating integrated circuits which provides for the detection of residual conductive material. A first conductive layer is deposited over the integrated circuit and patterned to define a first interconnect layer. An insulating layer is then formed over the integrated circuit. A second conductive layer is then deposited and patterned to define a second interconnect layer. Residual conductive material can be formed during patterning of the second interconnect layer when portions of the second conductive layer remain adjacent to the vertical sidewalls of the first interconnect layer. To make the residual conductive material easier to detect, the conductivity of the residual conductive material is increased by either implanting impurities into the integrated circuit or siliciding the residual conductive material with a refractory metal.

Abstract: According to the present invention, the functionality and possible process-related defects of an integrated circuit device are quickly assessed and isolated using a special testing methodology. Utilizing a test chip, an Electron Beam (E-Beam) is used to locate defective circuitry of the integrated circuit at functional levels, and an emission microscope is used to locate possible DC leakage related to silicon which is indicative of process-related defects. Using the methodology of the present invention on a test chip rather than a real production device means that the functional analysis time may be reduced from weeks to less than one hour.

Abstract: A relatively large number of test fixtures are provided for an available tester. The tester is programmed to access the individual test fixtures independently, and does so only when the devices connected to them are to be tested. When the test fixtures are not in such a test mode, local power sources provided for each fixture are used to apply stress voltages to the devices being tested. This frees the tester from the requirement for providing stressing voltages to the devices, allowing it to be efficiently used to perform testing on a larger number of devices concurrently.

Abstract: A transconductor circuit has first and second half cascode mirror circuits. Each half cascode mirror circuit has a cascode transistor, an active transistor, a base current compensating transistor, and a current source connected at one side to a supply voltage and at another side to the cascode transistor. The cascode and active transistors are connected in series between the current source and a first reference potential node. The base current compensating transistor is connected between the supply voltage and the base of the active transistor, and has its base connected between the current source and the cascode transistor. The bases of the cascode transistors of the first and second half cascode mirror circuits are connected to a second reference potential. First and second output mirror circuits are connected to mirror a current in a respective active transistor of the first and second half cascode mirror circuits.

Abstract: An integrated circuit package of the surface-mountable type within which a battery is mounted is disclosed. Battery leads extend from the side of the package body opposite that which is adjacent the circuit board when mounted, and between which a conventional battery may be placed. Standoffs are located on the package body for supporting the battery above the package body, so that a gap is present therebetween. A housing is attached to the package over the battery, and has standoffs attached to its inner surface so that a gap is also present between the housing and the battery. The gaps may be air gaps or filled with a low thermal conductivity material. The gaps thermally insulate the battery from the package body and housing, so that the circuit may be subjected to solder reflow mounting to a circuit board, while insulating the high temperatures from the battery.

Abstract: An isolation structure is provided to give improved protection from below ground current injection. A first epitaxial region is provided between a power field effect device and nearby control circuitry. The first epitaxial region is tied to the substrate, and the ties are located between the first epitaxial region and the power field effect device. On the opposite side of the power device, preferably adjacent an edge of the integrated circuit chip, a second epitaxial region is formed. This epitaxial region is connected to the first epitaxial region, preferably by a metal interconnect line. A second set of substrate contacts is located between the power device and the second epitaxial region, and is tied to ground. The second epitaxial region encourages injection of current at a location spaced away from the control circuitry.

Abstract: A brushless DC motor in which increased rotor resistance is used to facilitate very frequent reversals. The rotor endcap is thinned down to the point where the resistance seen by the path of the current loop through one of said endcaps, is at least one-half as much as the resistance seen by the portion of said current loop which flows along the length of one of said rotor bars.

Abstract: Therefore, according to the present invention, replacement of defective elements of an integrated circuit memory device by a redundant array is accomplished using a redundant decode scheme which is as fast as or faster than the standard decode. An exclusionary wired-connection redundant select circuit, which is programmable and pre-charged, allows the redundant array to be programmed such that any defective element may be replaced in a quick manner. The exclusionary wired-connection redundant select circuit is enabled by programming a programmable element of an enable circuit contained within the exclusionary wired-connection redundant select circuit and is programmed by disconnecting all programmable elements of the select circuit not representative of the defective element to be replaced. The output signal of the exclusionary wired-connection redundant select circuit propagates to decode output slave latch circuitry where it is latched and stored.

Abstract: According to the present invention, a system for placing surface mount components on a planar PCB has a placement apparatus which picks up a surface mount component to be placed on the PCB and moves it along the x and y axes to the desired PCB component location. The placement apparatus then moves a predetermined vertical distance towards the PCB. Next, a contact apparatus of the system having a spring bias force moves in a vertical direction towards the PCB until it makes contact with the PCB at a location in close proximity to the PCB component location. The contact apparatus has a spring bias force which holds the PCB planar at the PCB component location so that the surface mount component may be placed on the PCB.

Abstract: An integrated memory circuit having special stress test mode capability, and that is safely controlled by edge transition detection, is disclosed. The memory includes a test mode enable circuit that generates a test mode enable signal responsive to receiving overvoltage signals or other codes at terminals of the memory; the test mode enable signal is presented to the edge transition detection circuitry, so that the edge transition detection pulse that would otherwise initiate a memory operation is not generated during special test mode. This prevents the disastrous possibility that memory functions would be initiated by false edge transition detection signals (such as may occur during ramping of supply voltages to stress levels) during the special test mode. Special tests, such as stress tests and long write cycle disturb tests, may thus be safely performed.

Abstract: According to the present invention, a method and structure for using precharged data path techniques in those applications where it is necessary to retain the previous state of data is presented. In the preferred embodiment, a Pre-Charged Slave Latch with Parallel Previous State Memory circuit of a burst SRAM employs a parallel memory element configuration. In conjunction with this parallel memory element configuration, three stages are disclosed to implement a pre-charged data path technique for a burst SRAM memory. First, external data is loaded into the Pre-Charged Slave Latch with Parallel Previous State Memory circuit. Next, during a burst address sequence state of the Burst SRAM, the previous address state is allowed to propagate through the address decode path of the burst SRAM. Finally, the output signal of the Pre-Charged Slave Latch with Parallel Previous State Memory is precharged to an inactive state in parallel with other circuit elements of the pre-charged address decode path.

Abstract: A polycrystalline silicon layer is deposited and patterned to define a level of interconnect. Contact opening to lower conductive layers are then defined and patterned. A refractory metal such as tungsten is selectively deposited over the device, so that it adheres to the polycrystalline silicon in the interconnect leads and silicon of the lower conductive layer which is exposed in the contact openings. This provides a low resistance interconnect, and good, metal, contacts to underlying layers. Shared contacts between two or more polycrystalline silicon interconnect layers and in underlying conductive layers such as a substrate are easily formed using this technique.

Abstract: A method and circuit are disclosed which can be incorporated into any circuitry which uses fused algorithms to control the circuitry. Specifically, the invention may be incorporated into an integrated circuit device by way of a circuit that controls the coupling of an input signal to an output. Careful placement of a fuse or similarly functioning element in the circuit, permits the output of said circuit to be reliably set to a desired logic state. Specifically, when the fuse element is opened, a portion of the feedback path is disconnected, thereby preventing feedback in the direction of the unwanted logic state. The present invention enables construction of a fuse circuit which latches a desired logic state with stable performance and no layout area or speed degradation.

Abstract: An interconnect structure, and method for forming same, is suitable for use in integrated circuits such as SRAM devices. The structure uses masking of a polycrystalline silicon interconnect level to move a P-N junction to a region within a polycrystalline silicon interconnect line, rather than at the substrate. This P-N junction can then be shorted out using a refractory metal silicide formed on the polycrystalline silicon interconnect structure.

Abstract: A chopper stabilized current amplifier circuit is disclosed. The current amplifier circuit includes a main operational transconductance amplifier, a nulling transconductance amplifier, two capacitors, four switches, and a timing control circuit. The timing control circuit uses analog inverters to decrease the slew rate of the switching of the switches to decrease the noise in the system.

Abstract: A memory system including a memory array having at least two pairs of data lines, first and second data lines, that correspond to columns in the memory array. A first stage is included having inputs connected to the two pairs of data lines. The first stage also has a pair of output lines, a true output lines and a complement output line, wherein output signals generated in the output lines are controlled by a first and second set of transistors. Each transistor in the first set has a gate connected to one of the input lines, and each transistor in the second set is connected in series with one of the transistors in the first set and may be selectively turned on and turned off, wherein of one of the two pairs of data lines may be selected by turning transistors on and off in the second set.

Abstract: A method for planarization of an integrated circuit. After a first conducting layer is deposited and patterned, a first insulating layer is deposited over the device. A planarizing layer is then deposited over the integrated circuit and etched back. Portions of the planarizing layer may remain in the lower topographical regions of the first insulating layer to planarize the surface of the device. A second insulating layer is then deposited over the integrated circuit, followed by a third insulating layer. A contact via is formed through the layers to expose a portion of the first conducting layer. A second conducting layer can now be deposited and patterned on the device to make electrical contact with the first conducting layer.

Abstract: A method and circuit is provided for reading a memory array which utilizes multiple clocking signals during one read cycle to enable a dynamic sense amplifier to read data from the memory array. A dynamic sense amplifier is connected to an input line, a complementary input line, and a latch. A first equilibrating signal is input into the sense amplifier, followed thereafter by a first clocking signal. The first clocking signal enables the sense amplifier to read data on the input line and complementary input line. While the sense amplifier reads the data, the sense amplifier is isolated from the input and complementary input lines. Based upon the data read by the sense amplifier, an output state is provided for the latch. After reading the data, the sense amplifier is reconnected to the input and complementary input lines.

Abstract: A memory system comprising a memory array having at least two pairs of data lines, first and second data lines corresponding to columns in the memory array. The memory array also includes two level shifter circuits, a first shifter circuit connected to the first lines and a second level shifter circuit connected to the second data lines, wherein the level shifter circuits produce output signals and may be enabled and disabled. A selection signal is used to selectively enable and disable the level shifter circuits, wherein one pair of data lines may be selected. An amplification circuit is connected to the level shifters for amplifying the output signals from the level shifter circuits, and a logic circuit is used to generate logic output signals in response to the amplified output signals from the amplification circuit.