Patents Represented by Attorney S. Matthew Cairns
  • Patent number: 8343580
    Abstract: Methods of vapor depositing metal-containing films using certain organometallic compounds containing a carbonyl-containing ligand are disclosed.
    Type: Grant
    Filed: September 14, 2010
    Date of Patent: January 1, 2013
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Qing Min Wang, Deodatta Vinayak Shenai-Khatkhate, Huazhi Li
  • Patent number: 8277886
    Abstract: Delivery devices for delivering solid precursor compounds in the vapor phase to reactors are provided. Such devices include a precursor composition of a solid precursor compound with a layer of packing material disposed thereon. Also provided are methods for transporting a carrier gas saturated with the precursor compound for delivery into such CVD reactors.
    Type: Grant
    Filed: May 22, 2007
    Date of Patent: October 2, 2012
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventor: Deodatta Vinayak Shenai-Khatkhate
  • Patent number: 8277887
    Abstract: Delivery devices for delivering solid precursor compounds in the vapor phase to reactors are provided. Such devices include a precursor composition of a solid precursor compound with a layer of packing material disposed thereon. Also provided are methods for transporting a carrier gas saturated with the precursor compound for delivery into such CVD reactors.
    Type: Grant
    Filed: June 28, 2011
    Date of Patent: October 2, 2012
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventor: Deodatta Vinayak Shenai-Khatkhate
  • Patent number: 8268157
    Abstract: Copper plating baths containing a leveling agent that is a reaction product of a certain imidazole with a certain epoxide-containing compound that deposit copper on the surface of a conductive layer are provided. Such plating baths deposit a copper layer that is substantially planar on a substrate surface across a range of electrolyte concentrations. Methods of depositing copper layers using such copper plating baths are also disclosed.
    Type: Grant
    Filed: March 15, 2010
    Date of Patent: September 18, 2012
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventor: Zukhra I. Niazimbetova
  • Patent number: 8268158
    Abstract: Copper plating baths containing a leveling agent that is a reaction product of a certain imidazole with a certain epoxide-containing compound that deposit copper on the surface of a conductive layer are provided. Such plating baths deposit a copper layer that is substantially planar on a substrate surface across a range of electrolyte concentrations. Methods of depositing copper layers using such copper plating baths are also disclosed.
    Type: Grant
    Filed: August 11, 2011
    Date of Patent: September 18, 2012
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Zukhra I. Niazimbetova, Elie H. Najjar, Maria Anna Rzeznik, Erik Reddington
  • Patent number: 8262891
    Abstract: Leveling agents for metal plating baths are provided. Plating baths containing such leveling agents provide metal deposits having substantially level surfaces. Such leveling agents may be selected to selectively incorporate desired levels of impurities into the metal deposit.
    Type: Grant
    Filed: October 2, 2006
    Date of Patent: September 11, 2012
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Deyan Wang, Robert D. Mikkola, George G. Barclay
  • Patent number: 8262895
    Abstract: Copper plating baths containing a leveling agent that is a reaction product of a certain benzimidazole with a certain epoxide-containing compound that deposit copper on the surface of a conductive layer are provided. Such plating baths deposit a copper layer that is substantially planar on a substrate surface across a range of electrolyte concentrations. Methods of depositing copper layers using such copper plating baths are also disclosed.
    Type: Grant
    Filed: March 15, 2010
    Date of Patent: September 11, 2012
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Zukhra I. Niazimbetova, Maria Anna Rzeznik
  • Patent number: 8143360
    Abstract: The invention is a composition comprising a curable arylcyclobutene based oligomer or polymer and a dissolution inhibitor which comprises a compound comprising at least two diazonaphthoquinone (DNQ) moieties each of which is pendant from different phenyl groups.
    Type: Grant
    Filed: October 12, 2005
    Date of Patent: March 27, 2012
    Assignee: Dow Global Technologies LLC
    Inventors: Ying Hung So, Edmund J. Stark, Shellene K. Thurston, Kayla J. Gallant (nee Baranck), Yongfu Li
  • Patent number: 8142847
    Abstract: Compositions including an amido-group-containing vapor deposition precursor and a stabilizing additive are provided. Such compositions have improved thermal stability and increased volatility as compared to the amido-group-containing vapor deposition precursor itself. These compositions are useful in the deposition of thin films, such as by atomic layer deposition.
    Type: Grant
    Filed: March 3, 2008
    Date of Patent: March 27, 2012
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Stephen J. Manzik, Qin-Min Wang
  • Patent number: 8143324
    Abstract: The use of hindered phenol containing anti-oxidants enable arylcyclobutene-based formulations to be cured in oxygen containing environments such as air without unacceptable degradation in key properties of dielectric constant, water uptake, or transmittance.
    Type: Grant
    Filed: October 12, 2005
    Date of Patent: March 27, 2012
    Assignee: Dow Global Technologies LLC
    Inventors: Ying Hung So, Edmund J. Stark, Jack E. Hetzner, Shellene K. Thurston
  • Patent number: 8012536
    Abstract: Methods of forming metal-containing layers are provided where heteroleptic organometallic compounds containing at least one formamidinate ligand are conveyed in a gaseous form to a reactor; and films comprising a metal are deposited on a substrate. These heteroleptic organometallic compounds have improved properties over conventional vapor deposition precursors. Such compounds are suitable for use as vapor deposition precursors including direct liquid injection. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds or their solutions in organic solvents.
    Type: Grant
    Filed: June 5, 2008
    Date of Patent: September 6, 2011
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Huazhi Li, Qing Min Wang
  • Patent number: 8012883
    Abstract: Methods are provided for manufacturing optical display devices which remove an etch resist and residual post-etch metal in a single step. These methods are particularly useful in the manufacture of LCDs.
    Type: Grant
    Filed: August 29, 2007
    Date of Patent: September 6, 2011
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Luis A. Gomez, Jason A. Reese
  • Patent number: 7989323
    Abstract: Methods of doping a III-V compound semiconductor film are disclosed.
    Type: Grant
    Filed: June 21, 2010
    Date of Patent: August 2, 2011
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventor: Deodatta Vinayak Shenai-Khatkhate
  • Patent number: 7767840
    Abstract: Organometallic compounds suitable for use as vapor phase deposition precursors for Group IV metal-containing films are provided. Methods of depositing Group IV metal-containing films using certain organometallic precursors are also provided. Such Group IV metal-containing films are particularly useful in the manufacture of electronic devices.
    Type: Grant
    Filed: August 12, 2008
    Date of Patent: August 3, 2010
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Michael Brendan Power
  • Patent number: 7722720
    Abstract: Delivery devices for delivering solid precursor compounds in the vapor phase to reactors are provided. Such devices include a precursor composition of a solid precursor compound with a layer of packing material disposed thereon. Also provided are methods for transporting a carrier gas saturated with the precursor compound for delivery into such CVD reactors.
    Type: Grant
    Filed: December 6, 2005
    Date of Patent: May 25, 2010
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Michael L. Timmons, Charles J. Marsman, Egbert Woelk, Ronald L. DiCarlo, Jr.
  • Patent number: 7547631
    Abstract: Organometallic compounds containing a phosphoamidinate ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.
    Type: Grant
    Filed: October 4, 2006
    Date of Patent: June 16, 2009
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Qing Min Wang
  • Patent number: 7531458
    Abstract: Organometallic compounds containing an electron donating group-substituted alkenyl ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.
    Type: Grant
    Filed: September 29, 2006
    Date of Patent: May 12, 2009
    Assignee: Rohm and Haas Electronics Materials LLP
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Qing Min Wang
  • Patent number: 7413942
    Abstract: Methods of forming T-gate structures on a substrate are provided that use only UV-sensitive photoresists. Such methods provide T-gate structures using two lithographic steps using a single wavelength of radiation.
    Type: Grant
    Filed: January 28, 2005
    Date of Patent: August 19, 2008
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Rudy Pellens, Frank Linskens
  • Patent number: 7413776
    Abstract: A method of depositing a Group IV metal-containing film on a substrate by conveying one or more of certain Group IV organometallic compounds in a gaseous phase to a deposition reactor containing a substrate and decomposing the one or more Group IV organometallic compounds to form a film of a Group IV metal on the substrate is provided. Such Group IV metal-containing films are particularly useful in the manufacture of electronic devices.
    Type: Grant
    Filed: April 2, 2004
    Date of Patent: August 19, 2008
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Michael Brendan Power
  • Patent number: 7390360
    Abstract: Compositions useful in the manufacture of compound semiconductors are provided. Methods of manufacturing compound semiconductors using these compositions are also provided.
    Type: Grant
    Filed: September 28, 2005
    Date of Patent: June 24, 2008
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Egbert Woelk