Abstract: In a particular embodiment, a method includes receiving an input voltage at an input to a level shifting circuit that includes voltage pull-up logic. The method includes providing an output signal from the level shifting circuit. The method also includes selectively activating the voltage pull-up logic circuit of the level shifting circuit.

Abstract: Magnetic tunnel junction cell including multiple vertical domains. In an embodiment, a magnetic tunnel junction (MTJ) structure is disclosed. The MTJ structure includes an MTJ cell. The MTJ cell includes multiple vertical side walls. Each of the multiple vertical side walls defines a unique vertical magnetic domain. Each of the unique vertical magnetic domains is adapted to store a digital value.

Abstract: Techniques for generating clock and control signals to achieve good performance for read and write operations in memory devices are described. In one design, a clock and control signal generator within a memory device includes first and second clock generators, first and second control signal generators, and a reset circuit. The first clock generator generates a first clock signal used for read and write operations. The second clock generator generates a second clock signal used for write operations. The reset circuit generates at least one reset signal for the first and second clock generators. The reset signal(s) may have timing determined based on loading due to dummy cells. The first control signal generator generates control signals used for read and write operations based on the first clock signal. The second control signal generator generates control signals used for write operations based on the second clock signal.

Abstract: A memory system and method using adaptive word line (WL) pulse widths, including a memory operating according to a wordline (WL) pulse with an associated WL pulse width, and a built-in self-test (BIST) unit that interfaces with the memory, the BIST unit being configured to run a self-test of the internal functionality of the memory and provide a signal indicating if the memory passed or failed the self-test. An adaptive WL control circuit that interfaces with the BIST unit and the memory, the adaptive WL control circuit being configured to adjust the WL pulse width of the memory based on the signal provided by the BIST unit.

Abstract: Wireless chip-to-chip communications are methods and devices are disclosed. In an example, a wireless chip-to-chip communication device includes a plurality of chips, each of the plurality of chips having at least one antenna and formed on a multi-layered structure. The multi-layered structure includes first and second absorption layers. The first and second absorption layers are configured to enclose a propagation medium having a given dielectric constant. The plurality of chips are configured to wirelessly communicate with each other via the respective antennas in accordance with a given wireless communication protocol via a direct propagation path within the propagation medium.

Abstract: Die stacking systems and methods are disclosed. In an embodiment, a die has a surface that includes a passivation area, at least one conductive bond pad area, and a conductive stacked die receiving area sized to receive at least a second die.

Abstract: In a particular embodiment, a method of forming a magnetic tunnel junction (MTJ) device includes applying a dielectric layer to a surface, applying a metal layer to the dielectric layer, and adding a cap layer on the dielectric layer. The method also includes forming a magnetic tunnel junction (MTJ) stack such that an electrode of the MTJ stack is disposed on the metal layer and the cap layer contacts a side portion of the metal layer. An adjustable depth to via may connect a top electrode of the MTJ stack to a top metal.

Abstract: A system and method to fabricate magnetic random access memory is disclosed. In a particular embodiment, a method of aligning a magnetic film during deposition is disclosed. The method includes applying a first magnetic field along a first direction in a region in which a substrate resides during a deposition of a first magnetic material onto the substrate. The method further includes applying a second magnetic field along a second direction in the region during the deposition of the first magnetic material onto the substrate.

Abstract: A device is disclosed that includes a first pin to supply power to a first power domain of an integrated circuit, a second pin to supply power to a second power domain of the integrated circuit, a switching regulator and a controller. The switching regulator is coupled to the first pin to provide a first regulated power supply to the first power domain and is coupled to the second pin to provide a second regulated power supply to the second power domain. The controller is coupled to the first pin and to the second pin to selectively reduce current flow to at least the second pin during a low power event.

Abstract: A multithreaded processor device is disclosed and includes a first program thread and second program thread. The second program thread is execution linked to the first program thread in a lock step manner. As such, when the first program thread experiences a stall event, the second program thread is instructed to perform a no operation instruction in order to keep the second program thread execution linked to the first program thread. Also, the second program thread performs a no operation instruction during each clock cycle that the first program thread is stalled due to the stall event. When the first program thread performs a first successful operation after the stall event, the second program thread restarts normal execution.

Abstract: A level detector has an input circuit adapted to accept signals of multiple signal levels for detecting a specific level. The signal levels include a first signal level and a larger second signal level. Electronic components of the input circuit have reliability levels less than the second signal level. A latch circuit is coupled to the input circuit for latching a signal consistent with a detected level of an accepted signal.

Abstract: A signal interface circuit has a signal path for communicatively coupling host circuitry to peripheral circuitry of multiple peripherals. Communication signals in the signal path are of a peripheral signal level. The signal path has electronic components adapted for use in communicating signals between the host circuitry and the peripheral circuitry. The electronic components in the signal path have reliability limits less than the peripheral signal level. The configuration of the electronic components in the signal path allow communication of signals at the peripheral signal level.

Abstract: Systems, circuits and methods for determining read and write voltages for a given word line transistor in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. A first voltage can be supplied to the write operations so that the write operations occur in the saturation region of the word line transistor. A second voltage, which is less than the first voltage, can be supplied for read operations so that the read operations occur in the linear region of the word line transistor.

Abstract: A pseudo-dual port memory address multiplexing system includes a control circuit operative to identify a read request and a write request to be accomplished during a single clock cycle. A self time tracking circuit monitors a read operation and generates a switching signal when the read operation is determined to be complete. A multiplexer is responsive to the switching signal for selectively providing a read address and a write address to a memory address unit at the proper time.

Abstract: A processor having a multistage pipeline includes a TLB and a TLB controller. In response to a TLB miss signal, the TLB controller initiates a TLB reload, requesting address translation information from either a memory or a higher-level TLB, and placing that information into the TLB. The processor flushes the instruction having the missing virtual address, and refetches the instruction, resulting in re-insertion of the instruction at an initial stage of the pipeline above the TLB access point. The initiation of the TLB reload, and the flush/refetch of the instruction, are performed substantially in parallel, and without immediately stalling the pipeline. The refetched instruction is held at a point in the pipeline above the TLB access point until the TLB reload is complete, so that the refetched instruction generates a “hit” in the TLB upon its next access.

Abstract: An active over-voltage clamp system includes at least one over-voltage detector that is responsive to an input voltage and provides a first current. The system also includes a replica over-voltage circuit that provides a second current, and circuitry subtracting the second current from the first current to produce a difference current. The system further includes a differential clamp activated in response to the difference current. The differential clamp prevents the input voltage from increasing beyond a target voltage.

Abstract: Systems and methods of selectively applying negative voltage to word lines during memory device read operation are disclosed. In an embodiment, a memory device includes a word line logic circuit coupled to a plurality of word lines and adapted to selectively apply a positive voltage to a selected word line coupled to a selected memory cell that includes a magnetic tunnel junction (MTJ) device and to apply a negative voltage to unselected word lines.

Abstract: A method of managing cache partitions provides a first pointer for higher priority writes and a second pointer for lower priority writes, and uses the first pointer to delimit the lower priority writes. For example, locked writes have greater priority than unlocked writes, and a first pointer may be used for locked writes, and a second pointer may be used for unlocked writes. The first pointer is advanced responsive to making locked writes, and its advancement thus defines a locked region and an unlocked region. The second pointer is advanced responsive to making unlocked writes. The second pointer also is advanced (or retreated) as needed to prevent it from pointing to locations already traversed by the first pointer. Thus, the pointer delimits the unlocked region and allows the locked region to grow at the expense of the unlocked region.

Abstract: Power consumption in a multi-level hierarchical Content Addressable Memory (CAM) circuit is reduced without adversely impacting performance. According to one embodiment of a multi-level hierarchical CAM circuit, the CAM circuit includes a plurality of lower-level match lines, a plurality of higher-level match lines and match line restoration circuitry. The lower-level match lines are configured to be restored to a pre-evaluation state during a pre-evaluation period. The higher-level match lines are configured to capture an evaluation state of respective groups of one or more of the lower-level match lines during an evaluation period and to be restored to a pre-evaluation state during the pre-evaluation period. The match line restoration circuitry is configured to prevent at least one of the lower-level match lines from being restored to the pre-evaluation state responsive to corresponding enable information, e.g., one or more bits indicating whether match line search results are to be utilized.

Abstract: A memory system is provided. The memory system includes a volatile memory having a number of banks, each bank having a number of rows, and a memory controller configured to direct the volatile memory to engage in an auto-refresh mode, the memory controller further configured to provide a target bank address to the volatile memory. The volatile memory is configured to perform an auto-refresh operation in the auto-refresh mode, the auto-refresh operation being performed on a target bank identified by the target bank address. Remaining banks in the plurality of banks other than the target bank are available for memory access while the auto-refresh operation is being performed on the target bank.