Abstract: A capacitor in an IC has a first layer of conductive strips extending along a first direction (Z-direction). A first plurality of conductive strips in the first layer forms a portion a first node of the capacitor and alternates with a second plurality of conductive strips forming a portion of a second node of the capacitor. A plate layer adjacent to the first layer has a third plurality of conductive strips forming a portion the first node. Each strip in the third plurality of conductive strips is adjacent to another strip forming a part of the first node. The strips in the plate layer extend along a second direction (X-direction) orthogonal to the first direction. A first via electrically connects a first conductive strip in the first plurality of conductive strips in the first layer to a second conductive strip in the plate layer.

Abstract: A method (100) of estimating a performance characteristic of an integrated circuit (IC) design having an intellectual property (“IP”) core pre-characterizes an element type of the IC design to provide an estimation result of the element type (102-108). Mid-level elements of the IP are acquired (116). A user selects a value of a parameter of the IP core and the IC design is run on a design tool using the estimation result to model the mid-level elements of the IP core (118) to return a performance value of the IC design (120).

Abstract: A semiconductor device includes a field-programmable gate array (“FPGA”) die (202) having a frame address bus (604), a frame data bus (608), and a second integrated circuit (“IC”) die (204) attached to the FPGA die. An inter-chip frame address bus (605) couples at least low order frame address bits of a frame address of a frame between the FPGA die and the second IC die. The inter-chip frame address bus includes a first plurality of contacts (614) formed between the FPGA die and the second IC die. An inter-chip frame data bus couples frame data of the frame between the FPGA die and the second IC die. The inter-chip frame data bus includes a second plurality of contacts (616) formed between the FPGA die and the second IC die.

Abstract: A capacitor in an integrated circuit (“IC”) has a first node conductor formed in a first metal layer of the IC with a first spine extending along a first direction, a first vertical element extending from the first spine along a second direction perpendicular to the first direction. A first capital element extends along the first direction, and a first serif element extends from the capital element. The capacitor also has a second node conductor having a second spine, a second vertical element extending from the second spine toward the first spine, a second capital element, and a second serif element extending from the second capital between the first vertical element and the first serif element.

Abstract: An MOS transistor is programmed in a non-volatile memory cell. A storage capacitor in the non-volatile memory cell is used to enhance programming efficiency by providing additional charge to the programming terminal of the MOS transistor during breakdown of the gate dielectric, thus avoiding soft programming faults. In a particular embodiment the storage capacitor is a second MOS transistor having a thicker gate dielectric layer than the dielectric layer of the programmable MOS transistor.

Abstract: A method of modifying a data stream (12) in an integrated circuit (“IC”) determines a modification point (14) in the data stream from a beginning (16) of the data stream. The modification point is within a word (W7) and has an offset (oww) from the beginning of the word. Data is removed (18) or added (24) to produce a modified data stream (20).

Abstract: A capacitor in an integrated circuit (“IC”) has a first node plate link formed in a first metal layer of the IC electrically connected to and forming a portion of a first node of the capacitor extending along a first axis (y) and a second node plate link formed in a second metal layer of the IC extending along the axis and connected to the first node plate with a via. A third node plate link formed in the first metal layer is electrically connected to and forming a portion of a second node of the capacitor and extends along a second axis (x) of the node plate array transverse to the first node plate link, proximate to an end of the first node plate link and overlying a portion of the second node plate link.

Abstract: An MOS device has an embedded dielectric structure underlying an active portion of the device, such as a source extension or a drain extension. In an alternative embodiment, an embedded dielectric structure underlies the channel region of a MOS device, as well as the source and drain extensions.

Abstract: An integrated circuit has a transistor with an active gate structure overlying an active diffusion area formed in a semiconductor substrate. A dummy gate structure is formed over a diffusion area and separated from the active gate structure by a selected distance (d2). A stress layer overlying the transistor array produces stress in a channel region of the transistor.

Abstract: A software model (620) of a stacked integrated circuit system (600) includes a first integrated circuit die (602) connected to a second integrated circuit die (604) through an interchip communication interface (606). A software model of the first integrated circuit die includes an integrated circuit resource (614) and an internal interface (150). A software model of the second integrated circuit die includes a stacked resource (618). The software model of the internal interface is configurable to connect the stacked resource of the second integrated circuit die to the integrated circuit resource through the interchip communication interface.

Abstract: An electronic fuse (“E-fuse”) cell is formed on a semiconductor substrate. The E-fuse cell has a fuse element with a fuse link extending from a first fuse terminal across a thick dielectric structure to a second fuse terminal. The first and second fuse terminals are separated from the semiconductor substrate by a thin dielectric layer.

Abstract: A test work station for testing ICs includes an output bench with sliding rails that partitions the table top of the output bench into segregated areas. ICs that pass testing are sorted according to an operating parameter, in other words binned, and placed in the appropriate segregated area. The sliding rails avoid mingling of the various categories (bins) of ICs. In a further embodiment, the test work station includes an input bench for receiving product. Failed ICs are kept on the input bench, thus segregating them from ICs that have passed testing and avoiding inadvertent mixing of bad ICs with good ICs. In a particular embodiment, the input and output benches are at a height that allows an operator to stand while working, and allows storage underneath the benches to keep the work areas clear.

Abstract: An integrated circuit, such as a field programmable gate array or other configurable logic device, has an interconnect circuit selectively configurable to operate in a high-speed mode or in a low-power mode. The interconnect circuit is operable from a higher voltage supply or a lower voltage supply to change operating modes without reconfiguring data paths.

Abstract: An electronic fuse (“E-fuse”) has a silicide filament link extending along a gap between polysilicon structures formed on a silicon substrate. The silicide filament link extends across diffusions formed in the gap. A P-N junction between terminals of the E-fuse provides high resistivity after programming (fusing) the silicide filament link.

Abstract: A packaged integrated circuit includes an integrated circuit and a package substrate. A trace in the package substrate includes a first portion and a second, high-inductance, portion. The high-inductance portion of the trace is proximate to a port of the integrated circuit and provides a selected inductance operating in cooperation with the capacitance of the port to reduce return loss from the port. The first portion of the trace is part of a transmission line having a characteristic impedance.

Abstract: Recesses are formed in the drain and source regions of an MOS transistor. An ohmic contact layer is formed in the recesses, and a stressed silicon-nitride layer is formed over the ohmic contact layer. The recesses allow the stressed silicon nitride layer to provide strain in the plane of the channel region. In a particular embodiment, a tensile silicon nitride layer is formed over recesses of an NMOS transistor in a CMOS cell, and a compressive silicon nitride layer is formed over recesses of a PMOS transistor in the CMOS cell. In a particular embodiment the stressed silicon nitride layer(s) is a chemical etch stop layer.

Abstract: An integrated circuit includes an auto-bridging architecture including a first phases block that interfaces to a first user block having a first user signal domain. The first phases block converts the first user signal domain to a common signal domain. A second phases block coupled to the first phases block interfaces with a second user block having a second user signal domain. The second phases block converts the second user signal domain to the common signal domain so that the first user block cooperates with the second user block through the auto-bridging architecture of the IC.

Abstract: An integrated circuit (“IC”) with a peripheral component interconnect express (“PCIe”) has at least two data sinks (204, 206) and a data source (202) capable of providing data packets to either data sink. A switch (208) of the PCIe system includes a first buffer (226) queuing data packets for one of the data sinks and a second buffer (227) queuing data packets for the other data sink. A status detector (224) detects when the first buffer equals or exceeds a selected buffer threshold, and a status-based flow control transmitter (232) sends a data link layer packet (“DLLP”) to the status-based flow control receiver (234) of the data source to cease transmitting first data packets while continuing to transmit second data packets.

Abstract: The availability of device resources of an IC are quantified for a circuit design by building a representation of resource sites for the IC. Initial availability values are assigned to the resource sites, and any components having locking constraints are identified and placed into their respective sites. From the remaining resource sites, candidate sites for a component of the circuit design are identified. The candidate sites are summed, and the initial availability values of the candidate sites are modified according to the sum.

Abstract: An electrically erasable programmable read-only memory (“CMOS NON-VOLATILE MEMORY”) cell is fabricated using standard CMOS fabrication processes. First and second polysilicon gates are patterned over an active area of the cell between source and drain regions. Thermal oxide is grown on the polysilicon gates to provide an isolating layer. Silicon nitride is deposited between the first and second polysilicon gates to form a lateral programming layer.