Abstract: A method of forming a flash memory device includes forming a plurality of memory gates over a semiconductor substrate, forming an oxide film over the uppermost surface and sidewalls of the memory gates and then forming a plurality of selective gates on sidewalls of each of the memory gates.

Abstract: An apparatus (e.g. a display) including a display substrate and a waveguide. The waveguide may guide ultraviolet light from the light source onto the display substrate. The display substrate may include light emitting material configured to emit visible light in response to absorption of the ultraviolet light.

Abstract: A semiconductor device including a first insulating layer having a hydroxyl radical formed over a semiconductor substrate; a line layer having a plurality of line patterns formed over the first insulating layer, the plurality if line patterns being arranged such that a spatial gap is provided therebetween; a fluorine-doped second insulating layer formed in the spatial gap between respective line patterns; and a multilayered diffusion prevention layer including a first oxide layer for suppressing an increase of a dielectric constant between the plurality of line patterns and a second oxide layer for preventing the diffusion of fluorine from the fluorine-doped second insulating layer into the first insulating layer.

Abstract: Embodiments relate to a semiconductor device and a method for fabricating the same. According to embodiments, a semiconductor device may include a metal film spaced from a semiconductor substrate at a predetermined interval and in which a plurality of etching holes are formed. A bottom metal pattern disposed on and/or over a space between the semiconductor substrate and metal film and top metal pattern formed on and/or over the bottom metal pattern may be provided. A pillar may be formed on and/or over the semiconductor substrate and may support one side of a low surface of the bottom metal pattern. A pad may be formed on and/or over the semiconductor substrate, and an air layer corresponding to the bottom metal pattern may be inserted therein. According to embodiments, a pyro-electric switch transistor using a bi-metal with different coefficients of thermal expansion may be provided.

Abstract: A method for manufacturing a semiconductor device includes forming an ONO layer in a memory region and forming several gate oxide layer patterns in a logic region, a nitride layer in the logic region can be used as a hard mask, enabling a reduction in the number of masks used. This results in improved manufacturing efficiency and reduced manufacturing costs of a SONOS semiconductor device.

Abstract: An image sensor and a method for manufacturing the same that includes photodiodes formed in a semiconductor substrate, a first insulating layer formed over the semiconductor substrate, the first insulating layer including a seed pattern corresponding spatially to the positions of the photodiodes, lower microlenses composed of an organic material formed over the seed pattern, a second insulating layer formed over the lower microlenses, a third insulating layer formed over the second insulating layer, color filters formed over the third insulating layer, and upper micro lenses formed over the color filters.

Abstract: A method of manufacturing a semiconductor memory cell including phase change material. A multi-bit memory cell may implement phase change material. Various kinds of information can be stored in one memory cell. A chip size may be minimized without sacrificing capacity and/or memory performance, as compared with a one-bit memory cell.

Abstract: Embodiments relate to a semiconductor device and a method for fabricating the same. According to embodiments, a semiconductor device may include a first device, a silicon epitaxial layer formed on and/or over the first device, a second device formed on and/or over the silicon epitaxial layer, and a connection via formed through the silicon epitaxial layer, which may electrically interconnect the first device and the second device. According to embodiments, a method for fabricating a semiconductor device may include forming a first device, forming a silicon epitaxial layer on and/or over the first device, forming a connection via through the silicon epitaxial layer, and forming a second device on and/or over the silicon epitaxial layer such that the second device may be electrically connected to the connection via.

Abstract: The present invention relates to a decoding circuit for a flat panel display, and more particularly to a decoding circuit for a flat panel display wherein a miniaturization is possible by reducing an area of the circuit. There is provided a decoding circuit comprising: a first decoder for selecting a predetermined number of gradation voltages from a plurality of gradation voltages according to a least significant bit or least significant bits of an image data; a second decoder for selecting one of the selected gradation voltages to be outputted to an output terminal according to a plurality of selection signals; and a third decoder for outputting the plurality of the selection signals according to a most significant bit or most significant bits of the image data, wherein a minimum length of gates of a plurality of MOSFETs included in the first decoder is shorter than that of a plurality of MOSFETS included in the second decoder.

Abstract: A M-I-M capacitor semiconductor device capable of enhancing the reliability and capacitance of a capacitor and maximizing the integration density of the device, and a method of fabricating the same are disclosed. The semiconductor device includes a semiconductor substrate, a capacitor lower metal layer formed over the semiconductor substrate, a SiN capacitor dielectric layer having a thickness of approximately 30 nm or less formed over the capacitor lower metal layer, and a capacitor upper metal layer formed over a portion of the capacitor dielectric layer and overlapping with the capacitor lower metal layer.

Abstract: A method of manufacturing a CMOS image sensor manufacturing includes forming a plurality of metal pads over a semiconductor substrate; electrically connecting the metal pads to lower conductive film patterns of multi-layer metal wires using metal contacts; depositing an insulation film over the metal pads; patterning the insulation film to expose at least a portion of the upper surface of the metal pads; and removing impurities from an uppermost surface of the metal pads.

Abstract: Embodiments relate to an apparatus that may test a memory device. According to embodiments, a period of memory development may be reduced in a manner of testing a delay of a major part in a memory by adding a simple circuit without using expensive equipment and by which a memory development cost can be lowered. According to embodiments, a memory device may include a memory array and a redundancy memory. According to embodiments, a device may include a programmable redundancy decoder determining a drive force to corresponding to a selection signal, the programmable redundancy decoder outputting the determined drive force to a word line of the redundancy memory and a delay difference generating unit generating a delay difference signal corresponding to a delay difference between first and second word line signals outputted from the redundancy memory.

Abstract: To provide a sounder that outputs alarm sound to notify an abnormality in a monitored region. The sounder includes: a sound source that outputs alarm sound when a pulse signal is applied to the sound source; a pulse signal application unit that applies the pulse signal to the sound source; a storage unit that stores plural combinations of a frequency and a pulse width that the pulse signal can take; and a pulse signal control unit that controls the pulse signal application unit so that the pulse signal corresponding to the combination of the frequency and the pulse width stored in the storage unit is applied to the sound source.

Abstract: A semiconductor chip, a method of fabricating the same and a stacked package having the same are disclosed. The semiconductor chip includes a wafer, a semiconductor device disposed on the wafer, an insulating layer covering the semiconductor device and disposed on the wafer, a deep via formed to penetrate the wafer and the insulating layer, and a heat dissipation member spaced at a predetermined interval from the deep via and penetrating at least a portion of the insulating layer for dissipating heat generated by the deep via.

Abstract: Embodiments relate to an image sensor and a method of manufacturing the same. According to embodiments, an image sensor may include a first substrate having circuitry formed thereon. It may further include a photodiode bonded to the first substrate and electrically connected to the circuitry, and a contact plug at a pixel border that may be electrically connected with the circuitry and the photodiode. According to embodiments, the photodiode may include a first conductive type ion implantation region selectively provided in a crystalline semiconductor layer, and a second conductive type ion implantation region in contact with one side surface of the first conductive type ion implantation region.

Abstract: Disclosed is a superconducting power cable capable of quench detection, and a quench detection system using the superconducting power cable. The superconducting power cable capable of quench detection includes a former; a superconducting conductor layer composed of a superconducting wire and surrounding the former; a conductor layer quench detection coil interposed between the former and the superconducting conductor layer and surrounding the former; an insulating layer surrounding the superconducting conductor layer; and a shielding layer surrounding the insulating layer. This superconducting power cable may detect quench generated during its operation in real time.

Abstract: A method for forming a metal wiring of a semiconductor device capable of efficiently preventing a hillock phenomenon occurred in a subsequent annealing process of a metal wiring process. The method for forming a metal wiring of a semiconductor device includes forming an Al growth stop film on the upper interface of an Al wiring film by reacting implanted reactive ions with a Ti film or the Al in the Al wiring film.

Abstract: Provided are coaxial waveguide microstructures. The microstructures include a substrate and a coaxial waveguide disposed above the substrate. The coaxial waveguide includes: a center conductor; an outer conductor including one or more walls, spaced apart from and disposed around the center conductor; one or more dielectric support members for supporting the center conductor in contact with the center conductor and enclosed within the outer conductor; and a core volume between the center conductor and the outer conductor, wherein the core volume is under vacuum or in a gas state. Also provided are methods of forming coaxial waveguide microstructures by a sequential build process and hermetic packages which include a coaxial waveguide microstructure.

Abstract: A method of coding a moving picture reduces blocking artifacts. The method includes defining pixel sets S0, S1, S2 around a block boundary, selectively determining a deblocking mode as a default mode or a DC offset mode depending on the degree of blocking artifacts. If the default mode is selected, frequency information is obtained around the block boundary per pixel using a 4-point DCT kernel, for example, a magnitude of a discontinuous component belonging to the block boundary is replaced with a minimum magnitude of discontinuous components belonging to the surroundings of the block boundary in the frequency domain and the replacing step is applied to the spatial domain. If the DC offset mode is selected and a determination is made to perform DC offset mode, the blocking artifacts in a smooth region are removed in the DC offset mode.