Abstract: A CMOS image sensor and a method for fabricating the same for preventing contamination and peeling of an array of micro lenses. The CMOS image sensor includes a plurality of photodiodes formed on and/or over a substrate, an insulating film formed on and/or over an entire surface of the substrate including the photodiodes, color filter layers formed on and/or over the insulating film, a first oxide film formed on and/or over the color filter layers, an ion-rich oxide film formed by injecting silicon ions into the first oxide film, a second oxide film formed on and/or over the ion-rich oxide film, and a micro lens pattern formed corresponding to the photodiodes by patterning the second oxide film.

Abstract: A digital-analog conversion circuit, a method for the digital-analog conversion and a source driver are disclosed. A digital-analog conversion circuit may include a latch for storing N bit digital data therein, and a digital-analog converter, for performing a first digital-analog conversion on predetermined bits out of the N bit data stored in the latch by using R-string conversion, and for performing a second digital-analog conversion based on a result of the first digital-analog conversion and all remaining bits of the N bit data, excluding the predetermined bits.

Abstract: The present invention relates to a fan motor is for forced circulation of cool air in the refrigerator and comprises a molding unit, a shaft bearing unit, a rotor and an end cap. The molding unit comprises a stator having a shaft bearing unit mounting hole in the center thereof and core teeth which protrude radially outward so that a coil is wound thereon; and a circuit board having a circuit and a device which are electrically connected to the coil of the stator. The shaft bearing unit is inserted and fixed in the shaft bearing unit mounting hole. The rotor has a magnetic ring formed on the inner surface of a cup-shaped rotor housing, and a rotating shaft is fixed at the bottom center of the rotor housing. The end cap whose edge is connected to a side wall of the molding unit covering the rotor.

Abstract: In communication cable of high capacity according to present invention, conductor of diameter d is coated by insulation material to form wire of diameter D, plural number of said wire are twisted by pitch p to form pairs, plural number of said pairs are twisted by collective pitch P, and said communication cable of high capacity comprise sheath wrapping said pairs, and impedance (Z) of said wire is from 90 to 110, and, diameter (d) of said conductor is from 0.53 mm to 0.65 mm, and diameter (D) of wire is from 0.9 mm to 1.1 mm, and said pitch (p) is from 8 mm to 25 mm, and said collective pitch (P) is from 40 mm to 150 mm, and relative ratio of diameter of wires to diameter of conductor D/d is from 1.625 to 1.835. And, by impedance matching between equipment for data transmission, return loss of cable can be minimized, so high speed data transmission can be made.

Abstract: The present invention relates to a semiconductor device, and more particularly to a method for forming a metal/insulator/metal (MIM). The method comprises the steps of: forming a metal wiring surrounded by the inter-metal dielectric film; forming a plurality of insulating film on the metal wiring in sequence; and forming a metal barrier film on the insulating film, whereby the insulating film functioning as a buffer film can mitigate the stress between the films.

Abstract: The present invention provides a motor comprising: a stator which contains a core insulated with an insulator and wrapped with a coil therearound, wherein the coil includes an aluminum core wire with a coating film therearound; a tab terminal including at least one slit in which the coil is inserted; and a magmate that is inserted into the tab terminal by forming both the slit to which the coil is electrically connected through insertion and a contact unit which contacts the external electric terminal for an electric connection, characterized in that the tab terminal is divided by a barrier into a coil connection space unit and a terminal connection space unit, and the slit opened from the upper side to the lower side is formed on an outer wall of the coil connection space unit to allow the insertion of the coil.

Abstract: The present invention relates to an axial motor, and more specifically, to an axial motor which has a simple structure and is easily assembled by inserting and holding core teeth in core teeth insertion holes circularly arranged on a yoke. The axial motor according to the present invention includes: a stator having core teeth which are insulated by insulators, arranged in a ring-shaped pattern, and have a coil wound thereon; and a rotor having magnets which are arranged in a ring-shaped pattern to face the ends of the core teeth in an axial direction and are supported by the rotor axis at the center of the rotor to rotate relatively with respect to the stator.

Abstract: A semiconductor device capable of preventing malfunction of a Schottky diode to reduce a failure ratio of the semiconductor device and a method for fabricating the same are disclosed. The semiconductor device includes first and second CMOS switching devices formed over a silicon substrate, a Schottky diode formed in a Schottky diode region, and a Schottky diode isolation film surrounding the Schottky diode region and isolating the Schottky diode from the silicon substrate.

Abstract: A semiconductor device includes a first conductivity-type deep well formed in a substrate, a plurality of device isolation layers formed in the substrate in which the first conductivity-type deep well is formed, a second conductivity-type well formed on a portion of the first conductivity-type deep well between two of the device isolation layers, a first gate pattern formed over a portion of the second conductivity-type well, a second gate pattern formed over one of the device isolation layers, a source region formed in an upper surface of the second conductivity-type well to adjoin a first side of the first gate pattern, a first drain region formed to include the interface between an upper surface of the second conductivity-type well adjoining a second side of the first gate pattern and an upper surface of the first conductivity-type deep well adjoining the second side of the first gate pattern, and a second drain region formed in an upper surface of the first conductivity-type deep well to be spaced from th

Abstract: A passenger rail car includes a lower passenger compartment that includes a plurality of passenger seats. The passenger rail car also includes an upper passenger compartment that includes a plurality of passenger seats. A control cab for a rail car operator is elevated above the floor of the lower passenger compartment, and is located forward of the passenger seats and behind the crash energy management region. The front end of the passenger rail car may be slanted to provide a greater field of view for the rail car operator.

Abstract: A semiconductor device includes a pattern layer formed on and/or over a semiconductor substrate, a fluorine-diffusion barrier layer containing a silicon-doped silicon oxide formed on and/or over the pattern layer, and an interlayer dielectric layer containing fluorine formed on and/or over the fluorine-diffusion barrier layer.

Abstract: Provided are coaxial transmission line microstructures formed by a sequential build process, and methods of forming such microstructures. The microstructures include a transition structure for transitioning between the coaxial transmission line and an electrical connector. The microstructures have particular applicability to devices for transmitting electromagnetic energy and other electronic signals.

Abstract: To provide a heat detector in which thermal responsiveness of a heat detecting unit such as a ceramic element is improved. A heat detector 1 includes a ceramic element 10 accommodated in a sensing-device main body, and measures a temperature in a monitoring area based on a dielectric constant of the ceramic element 10. The Curie point temperature of the ceramic element 10 is set in a predetermined sensitive temperature range.

Abstract: A foam coaxial cable includes a central conductor; an inner skin layer surrounding the central conductor coaxially; an insulation layer surrounding the inner skin layer coaxially and made of polyethylene resin containing a plurality of foam cells uniformly formed therein; wherein the inner skin layer is made of polyolefin resin having excellent compatibility with the polyethylene resin to increase an interfacial adhesive force with the insulation layer, an outer skin layer surrounding the insulation layer coaxially to prevent overfoaming of the insulation layer and allow uniform creation of foam cells; a shield surrounding the outer skin layer coaxially; and a jacket surrounding the shield. This cable improves an interfacial adhesive force between the central conductor and the insulation layer and also improves the degree of foam of the foam cells, thereby capable of propagating ultra high frequency of GHz level without signal interference.

Abstract: An image sensor and a method for manufacturing the sensor are provided for reducing loss of light reflected from photodiodes, and thus, improving light efficiency. The method of manufacturing an image sensor can include providing a semiconductor substrate having a photodiode; and then forming a reflective film frame on the photodiode, the reflective film frame having sidewalls that are inclined with respect to the uppermost surface of the photodiode; and then forming an opening over the surface of the reflective film frame and corresponding to the photodiode by forming a reflective film on the sidewalls of the reflective film frame.

Abstract: A method for manufacturing a semiconductor device which minimizes the line width of a pattern and allows a low temperature oxide film and a thinly formed photoresist film to serve as ion blockers when performing an ion implantation process on the semiconductor substrate.

Abstract: A method of manufacturing a flash memory device that may include forming a first oxide film pattern and a first polysilicon pattern on a semiconductor substrate; sequentially forming a dielectric film pattern and a second polysilicon pattern on the semiconductor substrate including the first oxide film pattern and the first polysilicon pattern; forming a second oxide film pattern on the second polysilicon pattern; forming a gate by etching to the semiconductor substrate using the second oxide film pattern as a mask, the gate including the first oxide film pattern, the first polysilicon pattern, the dielectric film pattern and the second polysilicon pattern; removing the second oxide film pattern; forming a spacer on sidewalls of the gate; and forming an interlayer dielectric film on the semiconductor substrate including the gate and the spacer.

Abstract: Disclosed are a non-volatile semiconductor memory device capable of simplifying the complicated structure of a transistor, and a fabrication method for the same.

Abstract: A semiconductor device and a method for manufacturing the same include forming a second copper-plated layer over a second IMD layer and inside a second aperture formed in the second IMD by an electroplating process that uses the exposed first copper-plated layer as a seed layer. With the method, the copper-plated layer may be more simply and rapidly formed and achieve superior gap filling characteristics.