Abstract: A method of fabricating a dual damascene interconnect structure in a semiconductor device, comprises the following steps. A first level via photo sensitive dielectric layer is deposited and exposed over a semiconductor structure. A first level trench photo sensitive dielectric layer is deposited and exposed over the first via photo sensitive dielectric layer. The exposed first level via photo sensitive dielectric and trench photo sensitive dielectric layers are patterned and etched to form a first level dual damascene opening. The first level dual damascene opening comprises an integral first level via and metal line openings. A first level metal layer is deposited over the first level trench photo sensitive dielectric layer, filling the first level dual damascene opening. The first level metal layer is planarized to form at least one first level dual damascene interconnect having a first level horizontal metal line and a first level vertical via stack.

Abstract: Within a method for forming a microelectronic fabrication, there is first provided a substrate. There is then formed over the substrate a blanket aluminum containing conductor layer. There is then formed over the blanket aluminum containing conductor layer a masking layer. There is then etched, while employing a plasma etch method, the blanket aluminum containing conductor layer to form a patterned aluminum containing conductor layer while employing the masking layer as an etch mask layer, where the plasma etch method employs an etchant gas composition comprising at least one fluorine containing etchant gas and at least one halogen containing etchant gas other than a fluorine containing etchant gas. There is then formed contacting the patterned aluminum containing conductor layer a conformal dielectric liner layer. There is then formed upon the conformal dielectric liner layer a spin-on-glass (SOG) planarizing layer.

Abstract: A method for forming a microelectronic layer within a microelectronic fabrication first employs a substrate. There is then formed over the substrate a target microelectronic layer. There is then formed upon the target microelectronic layer a sacrificial smoothing layer. Finally, there is then etched the sacrificial smoothing layer completely from the target microelectronic layer while partially etching the target microelectronic layer to form a partially etched target microelectronic layer with an enhanced surface smoothness in comparison with the target microelectronic layer.

Abstract: A process of plasma-enhanced chemical vapor deposition of silicon oxynitride from a gas mixture of nitrous oxide and a silicon-containing gas employs a dual-power source of plasma generation and sustenance, to produce optimum properties of the deposited layer, for the purposes of passivation of the semiconductor surface, minimization of trapped energetic electrons, and protection of the integrated circuit device from moisture and other potentially deleterious effects.

Abstract: A method of forming a metal interconnect within a fluorinated silica glass dielectric layer while preventing outgassing from the fluorinated silica glass dielectric layer comprising the following steps. A semiconductor structure having a semiconductor device structure formed therein is provided. A metal line is formed over the semiconductor structure. The metal line being electrically connected with the semiconductor device structure. An insulating layer is formed over the semiconductor structure, covering the metal line. A fluorinated silica glass dielectric layer is formed over the insulating layer. The fluorinated silica glass dielectric layer is planarized to form a planarized fluorinated silica glass dielectric layer. The planarized fluorinated silica glass dielectric layer and the insulating layer are patterned to form a via opening to the metal line, and exposing portions of the patterned fluorinated silica glass dielectric layer within the via opening.

Abstract: A method of forming an interconnect, comprising the following steps. A dielectric layer, having an upper surface, is formed over a semiconductor structure. A trench, having side walls and a bottom, is formed within the dielectric layer. A barrier layer is then formed over the dielectric layer and lining the trench's side walls and bottom. A first copper layer is deposited on the barrier layer, filling the lined trench and blanket filling the barrier layer covered dielectric layer. The first copper layer is planarized, exposing the upper surface of the dielectric layer and forming a dished copper filled trench. A second copper layer is selectively deposited on the dished copper filled trench by either electroless plating or chemical vapor deposition (CVD). The second copper layer extending above the upper surface of the dielectric layer. The second copper layer is then planarized to form an essentially planar copper filled trench, or interconnect, level with the upper surface of said dielectric layer.

Abstract: A method for filling a trench within a substrate. First a substrate is provided having a trench formed therein. The trench has a bottom surface and opposing side walls. An undoped silicon glass liner is then thermally grown to coat the bottom surface and side walls of the trench. An undoped silicon oxide layer is then deposited over the undoped silicon glass liner. A boron doped silicon oxide layer is then deposited over the undoped silicon oxide layer, filling the trench. The boron doped silicon oxide layer is then heated to reflow the boron doped silicon oxide to fill any void initially formed within the boron doped silicon oxide layer within the trench, thereby eliminating any void so formed.

Abstract: A method for forming an aluminum containing conductor layer. There is first provided a substrate. There is then formed over the substrate a titanium layer employing an ionized metal plasma bias sputtering method. Finally there is then formed upon the titanium layer an aluminum containing conductor layer. By employing the ionized metal plasma bias sputtering method for forming the titanium layer, the aluminum containing conductor layer is formed with an enhanced (111) crystallographic orientation. The method is particularly useful for forming aluminum containing conductor layers with enhanced electromigration resistance, even under circumstances where there is formed interposed between a titanium layer and an aluminum containing conductor layer a titanium nitride layer.

Abstract: A method for forming an optoelectronic microelectronic fabrication and an optoelectronic microelectronic fabrication fabricated in accord with the method. There is first provided a substrate having at minimum a first photoactive region and a second photoactive region formed therein. There is then formed over the substrate a patterned first color filter layer registered with the first photoactive region. There is then formed upon the patterned first color filter layer a first optically transparent planarizing encapsulant layer. There is then formed upon the first optically transparent planarizing encapsulant layer a patterned second color filter layer registered with the second photoactive region. Finally, there is then formed upon the patterned second color filter layer a second optically transparent planarizing encapsulant layer. The method contemplates an optoelectronic microelectronic fabrication fabricated in accord with the method.

Abstract: A method for filling a trench within a silicon substrate. There is first provided a silicon substrate having a trench formed therein. There is then formed upon the substrate and within the trench a gap filling silicon oxide trench fill layer employing an ozone assisted thermal chemical vapor deposition (SACVD) method. There is then carried out a densification of the gap filling silicon oxide trench fill layer by annealing in an oxidizing atmosphere at an elevated temperature. Finally, the gap filling silicon oxide trench fill layer is planarized by chemical mechanical polish (CMP) planarization to form the silicon oxide trench filling layer with attenuated surface sensitivity and with an enhanced bulk quality and reduced trench recess at corners.

Abstract: A method for forming a dielectric layer upon a silicon layer. There is first provided a substrate employed within a microelectronics fabrication. There is then formed over the substrate a silicon layer. There is then formed through use of a first plasma annealing method employing a nitrogen containing plasma annealing atmosphere a silicon nitride containing layer upon a partially consumed silicon layer derived from the silicon layer. There is then oxidized through use of a second thermal annealing method employing an oxidizing material containing atmosphere the silicon nitride containing layer to form an oxidized silicon nitride containing layer upon a further consumed silicon layer derived from the partially consumed silicon layer. The method is particularly useful for forming gate dielectric layers within field effect transistors (FETs).

Abstract: A method for forming a fluorosilicate glass (FSG) layer. There is first provided a substrate. There is then formed over the substrate a fluorosilicate glass (FSG) layer. Finally, there is then removed, while employing a plasma etch method, a surface layer of the fluorosilicate glass (FSG) layer to form an etched fluorosilicate glass (FSG) layer. Within the method, the surface layer of the fluorosilicate glass (FSG) layer has a higher moisture content than the remaining etched fluorosilicate glass (FSG) layer. The method is particularly applicable for removing hydrated surface layers of chemical mechanical polish (CMP) planarized fluorosilicate glass (FSG) layers to provide non-hydrated underlying remainder layers of chemical mechanical polish (CMP) planarized fluorosilicate glass (FSG) layers which are stabilized with respect to hydrolysis involving loosely bound mobile fluorine atoms.

Abstract: A method of fabricating an LCD-on-silicon device, comprising the following steps. A semiconductor structure having a control transistor formed therein is provided. The control transistor having a source and a drain. An interlevel dielectric (ILD) layer over the semiconductor structure is provided. Source/drain (S/D) plugs contacting the source and drain through contact openings in said ILD layer are provided. M1 lines are formed over the ILD layer and connected to at least the S/D plugs. An M1 intermetal dielectric (IMD) layer is deposited and patterned over the M1 lines to form M1 contact openings exposing at least some of the M1 metal lines. M1 metal plugs are formed within the M1 contact openings and M2 metal islands connected to, and integral with, at least the M1 metal plugs. The M2 metal islands having exposed side walls. Sidewall spacers are formed on the exposed M2 metal islands side walls.

Abstract: Method for forming an inter-level dielectric layer upon a substrate employed within a microelectronics fabrication. There is first provided a substrate. There is then formed upon the substrate a patterned microelectronics layer. There is then formed upon and between the patterned microelectronics layer and substrate a blanket first silicon oxide layer employing high density plasma chemical vapor deposition. There is then an optional exposure of the first blanket silicon oxide layer to a nitrogen plasma treatment prior to formation thereupon of a second blanket silicon oxide dielectric layer employing ozone assisted sub-atmospheric pressure thermal chemical vapor deposition, where the nitrogen plasma exposure results in improved gap fill within the silicon oxide dielectric layer, whereas avoidance of exposure to the nitrogen plasma results in formation of voids within the blanket second silicon oxide dielectric layer, leading to lower capacitance.

Abstract: Within a method for forming a halogen doped glass layer, such as a fluorosilicate glass (FSG) layer, there is first provided a substrate. There is then formed over the substrate a first halogen doped glass layer. There is then formed upon the first halogen doped glass layer a barrier layer. There is then formed upon the barrier layer a second halogen doped glass layer. Finally, there is then planarized the second halogen doped glass layer, while not penetrating the barrier layer, to form a planarized halogen doped glass layer.

Abstract: A method for forming a via through a dielectric layer within a microelectronics fabrication. There is first provided a substrate having a contact region formed therein. There is then formed upon the substrate and covering the contact region a blanket first dielectric layer formed of a first dielectric material which is not susceptible to etching with an oxygen containing plasma. There is then formed upon the blanket first dielectric layer a blanket second dielectric layer formed of a second dielectric material which is susceptible to etching within the oxygen containing plasma. There is then formed upon the blanket second dielectric layer a blanket hard mask layer formed from a hard mask material which is not susceptible to etching within the oxygen containing plasma.

Abstract: A method for forming a via through a dielectric layer within a microelectronics fabrication. There is first provided a substrate employed within a microelectronics fabrication. There is then formed over the substrate a silicon oxide dielectric layer, where the silicon oxide dielectric layer is formed through use of a plasma enhanced chemical vapor deposition (PECVD) method employing tetra-ethyl-ortho-silicate (TEOS) as a silicon source material. There is then treated the silicon oxide dielectric layer with a plasma to form a plasma treated silicon oxide dielectric layer. Finally, there is then formed upon the plasma treated silicon oxide dielectric layer a patterned photoresist layer employed in defining the location of a via to be formed through the plasma treated silicon oxide dielectric layer.

Abstract: A method for forming upon a substrate employed within a microelectronics fabrication a composite dielectric layer with enhanced adhesion. There is first provided a substrate. There is then formed over and upon the substrate a first dielectric layer comprising a silicon, oxygen and nitrogen containing dielectric material in contact with a second dielectric layer comprising an organic polymer spin-on-polymer (SOP) dielectric material. The interface between the dielectric layers may be treated by ion implantation methods to provide the resulting silicon, oxygen and nitrogen containing dielectric layer composition to provide the composite dielectric layer with enhanced adhesion at the interface.

Abstract: A method of forming an interconnect, comprising the following steps. A semiconductor structure is provided that has an exposed first metal contact and a dielectric layer formed thereover. An FSG layer having a predetermined thickness is then formed over the dielectric layer. A trench, having a predetermined width, is formed within the FSG layer and the dielectric layer exposing the first metal contact. A barrier layer, having a predetermined thickness, may be formed over the FSG layer and lining the trench side walls and bottom. A metal, preferably copper, is then deposited on the barrier layer to form a copper layer, having a predetermined thickness, over said barrier layer covered FSG layer, filling the lined trench and blanket filling the barrier layer covered FSG layer. The copper layer, and the barrier layer on said upper surface of said FSG layer, are planarized, exposing the upper surface of the FSG layer and forming a planarized copper filled trench.

Abstract: A method of fabricating an anti-fuse module and dual damascene interconnect structure comprises the following steps. A semiconductor structure having at least two exposed metal lines covered by a first dielectric layer is provided. A first metal line is within an anti-fuse area and a second metal line is within an interconnect area. A first metal via is formed within the first dielectric layer within the anti-fuse area with the first metal via contacting the first metal line. A SiN layer is deposited over the first dielectric layer and the first metal via. The SiN layer is patterned to form at least two openings. A first opening exposes the first metal via, and a second opening exposes a portion of the first dielectric layer above the second metal line. A fusing element layer is deposited and patterned over the patterned SiN layered structure to form a fusing element over the first metal via.