Abstract: A monolithic semiconductor device comprising at least two complementary transistors, in which the base zone of a first transistor and the collector zone of a second transistor are provided in a first epitaxial layer, while the emitter zone of the second transistor, the emitter zone of the first transistor and the base zone of the second transistor are provided in a second epitaxial layer. A separation groove is provided between the transistors in the second epitaxial layer.

Abstract: An interpolating non-recursive digital filter for generating output signal samples which occur at a given output sampling frequency and which are related in a predetermined way to a sequence of input signal samples has an output sampling frequency which is an integer multiple of the frequency of the input signal samples. In order to make more efficient use of the storage capacity of a storage device in the filter, multiplying coefficients representative of the difference between two samples of the impulse response which belong to different sets but to the same sampling period are used.

Abstract: A semiconductor device comprising a semiconductor body portion having a shallow surface layer which is higher doped than the bulk of the semiconductor body portion, and a metal electrode on this layer and forming a Schottky barrier with the body portion. The layer serves to control the effective height of the barrier. The depth of the layer is such that the layer is substantially depleted of charge carriers in the zero bias condition whereby the slope of the reverse current-voltage characteristic of the barrier below break-down is determined by the doping of the bulk of the body portion substantially independently of the presence of the layer. Depending on the conductivity type of the layer relative to the bulk, the barrier can be higher or lower than that which would be formed in the absence of this layer. By providing the layer by implantation good control of the doping and hence of the barrier height can be obtained. Applicable to both discrete Schottky diodes and Schottky barriers in integrated circuits.

Abstract: In an apparatus which supplies characters or symbols and which is intended for service in different countries, some characters or symbols must have different forms for different countries or groups of countries. In the case of read-out apparatus which reproduces in dots, such as matrix printers or displays, the character forms are usually stored in a read-only store, a given address being assigned to each character. In order to achieve simple addressing in the case of a character which has different forms in different countries, not the character form is stored in the corresponding storage location, but rather one or more addresses which indicate in which location in the character store the relevant, country-dependent character form is present. To this end, each storage location comprises an additional storage (bit) position which indicates whether or not address information is concerned and which is read and interrogated first.

Abstract: The disclosure relates to an integrated circuit which is suitable as an LF switch, which enables switching without the switching clicks normally produced by semiconductor circuits. For this purpose the circuit arrangement is designed so that during switching the input direct voltage of the switch remains substantially unchanged.