Abstract: A semiconductor device which comprises an insulating flexible substrate having conductors extending on one side of the foil from the edge to near the center. A semiconductor element is connected with its contacts connected to the ends of the conductors at the center of the foil. On the side of the foil remote from the conductors a reinforcement member is provided which is present at least near the edges of the foil, the reinforcement member being connected in an adhering manner to the foil and having a pre-shaped contour so as to bend the foil in such manner that the surface of the semiconductor element remote from the foil and the ends of the conductors situated near the edges of the foil are situated substantially in the same plane.

Abstract: A bulk channel charge coupled imaging device having selective wavelength sensitivity includes a semiconductor layer in which pattern information in the form of discrete packets of majority charge carriers is generated and transported. The semiconductor layer has a concentration of at least one doping impurity characteristic of its conductivity type and a concentration of at least one deep level impurity which provides centers for trapping majority charge carriers. The doping impurity concentration and the deep level impurity concentration are such that depletion regions can be formed extending through the thickness of the layer while avoiding breakdown only as a result of substantially all the deep level centers within the depletion regions being full of majority charge carriers characteristic of the conductivity type of the semiconductor layer.

Abstract: The invention relates to a charge-coupled device in which the charge transport in the form of majority charge carriers takes place mainly via the bulk of a semiconductor layer of one conductivity type. The semiconductor layer has zones of the second conductivity type which do not have an electric contact but which are electrically biased by means of the isolation zone surrounding the semiconductor layer which can be connected to the zones by induction by means of the electrodes and forms a drain for charge carriers from the zones. In an embodiment the device is formed by a two-phase charge-coupled device in which the zones serve to obtain asymmetry in the system. In another embodiment the device is a series-parallel-series multiplex CCD in which the zones form isolation zones between the parallel lines.

Abstract: A semiconductor device includes a passivating layer to reduce and stabilize the surface recombination rate. The passivating layer is of polycrystalline semiconductor material and is of the same conductivity type as that of the underlying semiconductor material. The semiconductor material of the passivating layer differs from that of the underlying semiconductor layer and has a larger energy gap than the underlying layer.

Abstract: A method of manufacturing LOCOS transistors in which base doping, emitter doping and emitter metallization are provided via the same aperture. Problems at the edge of the sunken oxide are eliminated by a two-stage doping technique so that the channel stopper diffusion in the epitaxial layer may be omitted, which presents particular advantages in the manufacture of I.sup.2 L devices.

Abstract: In a CCD introduction of charge with good linearity and low signal input noise sensitivity is obtained by the control of punch-through of a depletion region associated with an input storage site to a rectifying barrier bounding a region in the semiconductor body separated from the CCD channel and forming a source of charge carriers to be stored and transported. In one form the source of charge carriers is an opposite conductivity type substrate on which is present a region of the one conductivity type in which a surface channel CCD is present. In other forms, including both surface channel CCD's and buried channel CCD's, buried layers are employed as source regions.

Abstract: A method in which a monocrystalline body is subjected in a gas atmosphere to a treatment for changing the thickness of the body, in which the thickness of the body is controlled by means of a measuring member which is subjected to the same treatment and which measuring member, on its side which is subjected to the treatment, consists of a monocrystalline layer and an adjoining substratum of a material having a refractive index differing of that the monocrystalline layer material. The measuring member is obtained by providing a substrate, depositing the monocrystalline layer on the substrate, forming the substratum on the monocrystalline layer, and then removing the substrate to form the measuring member.

Abstract: An imaging device includes a semiconductor body and a array of photosensitive elements arranged in rows and columns at a first portion of the body. A plurality of charge-transfer lines interdigitated with the columns of the array are provided for transfering storage charge carriers from the array to a charge-transfer shift register at a second portion of the semi-conductor body. Each of the transfer lines includes an elongate resistor electrode which has connections for applying a potential difference along the resistive electrode to produce a drift field in the underlying body portion in the direction of the shift register for transporting mobile charge carriers toward the shift register.

Abstract: A semiconductor device includes a silicon substrate having an insulating layer with a window. A silicon layer is deposited on the insulating layer and on the silicon substrate surface in the window. This silicon layer has n-type and p-type conductive layer parts which adjoin each other within the window and which each serve as both a connection conductor and an electrode of an active zone of the device. Semiconductor devices in accordance with the invention feature very small surface areas, and are thus particularly suitable for high frequency operation.

Abstract: A charge transfer device of the bulk CCD type is used as an electronic variable delay line for video frequency signals. Charge packets are formed by integration of the input signal current over the entire clock period of the clock signal. As a result, cross-talk of the clock signal to the input section does not affect the video signal to be processed. Furthermore, the nonlinear characteristic of the input current source is linearized by negative current feedback with the aid of an operation amplifier. The input section of the device includes a diffused input region and a first gate electrode for receiving an input signal, and a second gate electrode for receiving a substantially constant voltage.

Abstract: A method of manufacturing a semiconductor device having a transistor structure in which the emitter zone comprises a lower-doped region adjoining the base zone and a more highly-doped region adjoining the surface. According to the invention, the more highly-doped part is obtained by the introduction of doping atoms through an undoped polycrystalline layer provided on the surface. Preferably, a thin silicon nitride or silicon oxide layer is provided between the surface and the polycrystalline silicon layer prior to providing the latter.

Abstract: A method of manufacturing a semiconductor device, in particular a monolithic integrated circuit having very small complementary transistors. According to the invention two surface zones are provided beside each other without a masking tolerance of which one is formed by diffusion from a thin silicon layer. The distance between the surface zones is determined by the width of an oxide strip formed on the surface and on the edge of the silicon layer. The oxide strip is obtained by an underetching process and by using a silicon nitride mask deposited with shadow effect.

Abstract: A semiconductor device includes a body comprising two planar complementary transistor structures preferably but not exclusively with dielectric insulation. Both complementary transistor structures comprise parts of two epitaxial layers of opposite conductivity types present one on top of the other, the first layer forming the base zone of the first transistor and the second layer forming the collector zone of the second transistor, the emitter zone of the first transistor and the base zone of the second transistor being formed by parts of the second layer.

Abstract: A method of manufacturing a semiconductor device for generating laser beams is disclosed in which the mirror faces of the device are subjected to an oxidation treatment which includes an electrolytic oxidation step.

Abstract: Analog-to-digital converter, comprises a measuring amplifier circuit, a comparator, a counter, a digital-to-analog converter, a feedback circuit and an offset correction circuit, and is operative in three modes; one mode for adjusting the gain factor of the measuring amplifier circuit by means of the feedback circuit, one mode for offset correction of this measuring amplifier circuit by means of the offset correction circuit and one mode for measuring a supplied voltage for conversion into a digital value.

Abstract: A method of manufacturing a semiconductor device, in particular a device having two complementary insulated gate field effect transistors, in which an aperture is provided in a masking layer and in said aperture a zone is diffused in the body from a highly doped layer, in particular a phosphorus glass layer. According to the invention, a thermal oxide layer is formed in the aperture in a first heating step during the diffusion, after which the doping layer is removed without using a mask and while maintaining the thermal oxide layer, and the dopant is then further diffused in a second heating step. The thermal oxide layer serves as a partial masking against the diffusion, as an etchant stopper and in many cases also as a mask against ion implantation.

Abstract: The invention relates to a method of manufacturing a semiconductor device in which a compound consisting of at least two semiconductor materials and having an energy gap which is smaller than that of a substrate is deposited epitaxially on the substrate. According to the invention, the composition of the mixture is determined during the deposition by means of measurement of the thermal emission.

Abstract: The invention relates to a method in which a system of layers with a contact layer of gallium arsenide is formed epitaxially. In a second epitaxy treatment a layer of gallium aluminum arsenide is formed selectively. In order not to form the latter layer on the contact layer of gallium arsenide, the latter is shielded from gallium aluminum arsenide by means of a masking layer having a composition which differs from that of the layer to be provided selectively, so that the masking layer can afterwards be removed selectively.

Abstract: A digital filter for generating digital output signals from information signals in accordance with a predetermined transfer characteristics includes a coefficient number generator for supplying digital numbers which indicate the values of coefficients which represent the transfer characteristic. The coefficient number generator includes a device for storing increments of successive coefficient values in numerical form and a decoder connected thereto for recovering the coefficient numbers from the numbers stored in the storage device.

Abstract: Method of making an insulated gate field effect transistor is described in which the surface of a silicon semiconductor is covered in whole or in part with a layer of a masking material which masks against oxidation, such as silicon nitride. Areas of the silicon surface are exposed for the source and drain regions, leaving the oxidation mask over the future channel. When the source and drain regions have been made, as for example by diffusion, the device is subjected to oxidation, causing the growth of a thick oxide which sinks into the silicon surface where it is not masked by the oxidation mask. Among the advantages obtained are fewer precise masking steps, a flatter device surface, and reduced gate overlap of the source and drain.