Patents Represented by Attorney T

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  • Method of programming nonvolatile memory device
    Patent number: 8050097
    Abstract: According to an aspect of a method of programming a nonvolatile memory device, a first program operation command is input, and a program operation is executed according to a program start voltage stored in a program start voltage storage unit. Here, a program voltage, which is applied at a time point at which a memory cell programmed higher than a verify voltage while the program operation is performed occurs for the first time, is updated to a program start voltage.
    Type: Grant
    Filed: January 28, 2009
    Date of Patent: November 1, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventor: Jong Hyun Wang
  • Automatic detection of separators for compression
    Patent number: 8051060
    Abstract: A method that accepts a data file, iteratively tests different information units as record delimiters and field delimiters, and chooses as the data files record delimiter, R, and field delimiter, F, the information units that result in the lowest generalized entropy that is computed on fields created by use of the chosen delimiter pair R,F.
    Type: Grant
    Filed: February 13, 2009
    Date of Patent: November 1, 2011
    Inventors: Kiem-Phong Vo, Subhabrata Sen
  • Programming method of non-volatile memory device
    Patent number: 8050088
    Abstract: A programming method of a non-volatile memory device having a drain select transistor, a source select transistor, and a plurality of memory cells connected between the drain select transistor and the source select transistor includes applying a program voltage, which increases stepwise according to a repetition of a program cycle, to a selected memory cell and applying a pass voltage, which decreases in inverse proportion to change of the program voltage, to some of unselected memory cells.
    Type: Grant
    Filed: May 7, 2009
    Date of Patent: November 1, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventor: Won-Hee Lee
  • Semiconductor memory device capable of controlling tAC timing and method for operating the same
    Patent number: 8050374
    Abstract: A semiconductor memory device is capable of controlling a tAC with a timing margin in an output data process. The semiconductor memory device includes a delay locked loop circuit, a tAC control unit, a reference signal generating unit, and a data output block. The delay locked loop circuit produces delay locked clock signals through a delay locking operation. The tAC control unit adjusts a delay value of the delay locked clock signals in order to control a tAC timing, thereby generating output reference signals. The reference signal generating unit produces a latch reference signal in response to the delay locked clock signals. The data output block latches data in response to the latch reference signal and for outputting the latched data in response to the output reference signals.
    Type: Grant
    Filed: December 28, 2007
    Date of Patent: November 1, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventors: Kyoung-Nam Kim, Ho-Youb Cho
  • Semiconductor device
    Patent number: 8050310
    Abstract: A semiconductor device includes a transmitting unit for receiving plural bits of data to modulate the data to a 1-bit pulse signal whose pulse width corresponds to a value of the data and transferring the pulse signal to a transfer line; and a receiving unit for receiving the pulse signal transferred through the transfer line to demodulate the pulse signal to the plural bits of data.
    Type: Grant
    Filed: December 27, 2006
    Date of Patent: November 1, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventor: Sung-Joo Ha
  • Transistor including bulb-type recess channel and method for fabricating the same
    Patent number: 8048742
    Abstract: A method for fabricating a transistor including a bulb-type recess channel includes forming a bulb-type recess pattern in a substrate, forming a gate insulating layer over the substrate and the bulb-type recess pattern, forming a first gate conductive layer over the gate insulating layer, forming a void movement blocking layer over the first gate conductive layer in the bulb-type recess pattern, and forming a second gate conductive layer over the void movement blocking layer and the first gate conductive layer.
    Type: Grant
    Filed: June 29, 2007
    Date of Patent: November 1, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventors: Kwan-Yong Lim, Hong-Seon Yang, Dong-Sun Sheen, Se-Aug Jang, Heung-Jae Cho, Yong-Soo Kim, Min-Gyu Sung, Tae-Yoon Kim
  • Data output timing in response to read command based on whether delay locked loop is enabled/disabled in a semiconductor device
    Patent number: 8050119
    Abstract: A semiconductor memory device can output data according to a predetermined data output timing, in spite of a high frequency of system clock, even when a delay locked loop is disabled. The semiconductor memory device includes a delay locked loop configured to perform a delay locking operation on an internal clock to output delay locked clock, and a data output control unit configured to determine a data output timing, according to whether the delay locked loop is enabled or disabled, in response to a read command.
    Type: Grant
    Filed: June 30, 2008
    Date of Patent: November 1, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventor: Ki-Chon Park
  • Power hand tool switch torque controller apparatus
    Patent number: 8049128
    Abstract: This invention is for a trigger switch apparatus for a hand held electric drill and includes a control of the electric power to a drill for fast or slow rotation of the drill bit by moving a rheostat contact bridge over a rheostat coil section for control of the rotation speed of the drill bit, and further a leaf spring holds the trigger carriage stop shoulder onto the carriage, and on seizure, kick back or sudden torque of the drill bit there is a cut off of power and the switch reverts to an “off” or “open” position, which then requires re-setting of the switch to a “closed” or “on” position for re-actuating operation of the hand held electric drill.
    Type: Grant
    Filed: March 9, 2009
    Date of Patent: November 1, 2011
    Inventor: Daniel D. Witt
  • Program method of nonvolatile memory device
    Patent number: 8045393
    Abstract: According to an aspect of a program method of a nonvolatile memory device, a first program operation for programming a first data stored in a first latch may be performed and a cache program signal may be input for inputting a second data to be programmed subsequently. When the cache program signal is input, a determination is made as to whether a first program verify operation is being performed, and if so, the verify operation is stopped, the second data is input, and the first program verify operation is restarted.
    Type: Grant
    Filed: December 31, 2008
    Date of Patent: October 25, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventors: Byung Ryul Kim, Jun Seop Chung, Duck Ju Kim
  • Combinations of herb extracts having synergistic antioxidant effect, and methods relating thereto
    Patent number: 8043637
    Abstract: The present invention comprises mixtures of herb extracts which exert synergistic antioxidant effect and comprise the herb ginger and at least one other herb selected from the group consisting of honeysuckle and sophora. Skin care preparations incorporating such herb extract mixtures, and their methods of preparation and use, are also claimed.
    Type: Grant
    Filed: June 15, 2009
    Date of Patent: October 25, 2011
    Assignee: The Dial Corporation
    Inventors: Haiyan Ge, Earl P. Seitz, Jr., Thomas Doering
  • Circuit and method for controlling read cycle
    Patent number: 8045400
    Abstract: A circuit for controlling the read cycle includes plurality of shift stages configured to sequentially shift read signals; and an activating unit configured to activate a read cycle signal which represents a read cycle, by performing logical operation for output signals of the plurality of the shift stages, wherein the plurality of the shift stages are configured to sequentially shift the read signals for a period corresponding to burst setting information.
    Type: Grant
    Filed: June 30, 2009
    Date of Patent: October 25, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventors: Je-Yoon Kim, Jong-Chern Lee
  • Method and apparatus for concept-based searching of natural language discourse
    Patent number: 8046348
    Abstract: Searching computer-accessible content can be described as the utilization of an automated process to determine occurrences of where a sought-for concept is referred to in natural language discourse. Concept-based search refers to the reliable identification, within computer-accessible content that represents natural language discourse, of instances in which a particular pinnacle concept “C” is referenced. References to pinnacle concepts are not amenable to detection by the use of keywords. For each pinnacle concept “C,” whose reference is to be determined, a set of linguistic features can be compiled that is referred to herein as a “concept feature set.” In general, it is desirable for a concept feature set to be “complete.” A definition of completeness is presented. Concept-based search can be used in conjunction with keyword-based search.
    Type: Grant
    Filed: May 29, 2006
    Date of Patent: October 25, 2011
    Assignee: NetBase Solutions, Inc.
    Inventors: John Andrew Rehling, Michael Jacob Osofsky
  • Semiconductor memory device with temperature sensing device capable of minimizing power consumption in refresh
    Patent number: 8045411
    Abstract: A semiconductor memory device capable of measuring a temperature without the influence of noise includes a temperature sensing device for sensing a current temperature in response to a control signal, wherein the semiconductor memory device enters a power save mode for a predetermined time starting from an activation of the control signal and wherein the power save mode has substantially no power consumption. A method for driving a semiconductor memory device in accordance with the present invention includes sensing a current temperature in response to a control signal and entering a power save mode for a predetermined time starting from an activation of the control signal, wherein the power save mode has substantially no power consumption.
    Type: Grant
    Filed: April 13, 2007
    Date of Patent: October 25, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventors: Kyung-Hoon Kim, Patrick B. Moran
  • Semiconductor memory device and method for driving the same
    Patent number: 8046663
    Abstract: A semiconductor memory device includes: a first bank and a second bank; one or more first data input/output pads disposed at one side of the first bank and used in access to data of the first bank; one or more second data input/output pads disposed at one side of the second bank and used in access to data of the second bank; a first cyclic redundancy code (CRC) generation circuit for generating a first CRC using a plurality of data output from the first bank and outputting the generated first CRC through the first data input/output pads; and a second CRC generation circuit for generating a second CRC using a plurality of data output from the second bank and outputting the generated second CRC through the second data input/output pads.
    Type: Grant
    Filed: June 29, 2007
    Date of Patent: October 25, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventor: Hyuck-Soo Yoon
  • Wave power
    Patent number: 8043133
    Abstract: A wave-powered water vehicle includes a surface float, a submerged swimmer, and a tether which connects the float and the swimmer, so that the swimmer moves up and down as a result of wave motion. The swimmer includes one or more fins which interact with the water as the swimmer moves up and down, and generate forces which propel the vehicle forward. The vehicle, which need not be manned, can carry communication and control equipment so that it can follow a course directed by signals sent to it, and so that it can record or transmit data from sensors on the vehicle.
    Type: Grant
    Filed: January 18, 2007
    Date of Patent: October 25, 2011
    Assignee: Liquid Robotics, Inc
    Inventors: Roger G. Hine, Derek L. Hine, Joseph D. Rizzi, Kurt A. F. Kiesow, Robert Burcham, William A. Stutz
  • On-die termination control circuit of semiconductor memory device
    Patent number: 8044679
    Abstract: On-die termination control circuit of semiconductor memory device includes a counter configured to count an external clock to output a first code, and to count an internal clock to output a second code, a transfer controller configured to determine whether to transfer the first code and the second code in response to a first termination command and a normal termination controller configured to compare the first code and the second code with each other to determine enabling/disabling timings of a termination operation in response to a second termination command.
    Type: Grant
    Filed: May 28, 2008
    Date of Patent: October 25, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventor: Kyung-Whan Kim
  • Phase-change memory device
    Patent number: 8045368
    Abstract: A phase-change memory device performs a buffer program operation in response to a buffer program command sequence. The phase-change memory device includes a page buffer unit configured to store a plurality of input data corresponding to a word count value of a buffer program command sequence and selectively output the stored input data in response to a selection signal, and a page buffer control unit configured to generate the selection signal determined by counting a value representing the word count value.
    Type: Grant
    Filed: December 30, 2008
    Date of Patent: October 25, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventor: Ho-Seok Em
  • On die thermal sensor of semiconductor memory device
    Patent number: 8042999
    Abstract: An on die thermal sensor (ODTS) of a semiconductor memory device includes a high voltage generating unit for generating a high voltage having a voltage level higher than that of a power supply voltage of the semiconductor memory device; and a thermal information output unit for sensing and outputting a temperature as a thermal information code, wherein the thermal information output unit uses the high voltage as its driving voltage.
    Type: Grant
    Filed: December 28, 2006
    Date of Patent: October 25, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventors: Chun-Seok Jeong, Yong-Ki Kim
  • Semiconductor memory device having common circuitry for controlling address and data mask information
    Patent number: 8045397
    Abstract: A semiconductor memory device is capable of controlling an address and data mask information through the use of a common part, thereby reducing chip size. The semiconductor memory device for receiving the addresses and data mask information via a common pin includes a buffer unit and a shift register unit. The buffer unit receives the addresses and data mask information. The shift register unit is comprised of a plurality of latch stages connected in series, for sequentially latching the addresses and data mask information being inputted in series, and an address output unit and a data mask information output unit for outputting information from different latch stages.
    Type: Grant
    Filed: December 31, 2007
    Date of Patent: October 25, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventor: Ki-Chang Kwean
  • Method for manufacturing multilayer flexible printed circuit board
    Patent number: 8042265
    Abstract: A method for manufacturing a multilayer FPCB includes the steps of: providing a first substrate, a second substrate and a binder layer; defining an opening on the binder layer; defining a first slit in the dielectric layer of the first substrate; laminating the first substrate, the binder layer and the second substrate; forming a second slit in the conductive layer of the first substrate, the second slit is configured to be aligned with the first slit, cutting the first substrate, the binder layer and the second substrate thereby forming a multilayer flexible printed circuit board having different numbers of layers in different areas.
    Type: Grant
    Filed: December 14, 2007
    Date of Patent: October 25, 2011
    Assignees: FuKui Precision Component (Shenzhen) Co., Ltd., Foxconn Advanced Technology Inc.
    Inventors: Jun-Qing Zhang, Chih-Yi Tu, Szu-Min Huang