Abstract: A fuel cell system includes a fuel cell stack including a plurality of fuel cells. The fuel cell stack includes a middle portion of fuel cells and at least one end portion of fuel cells. The fuel cells of the end portion is arranged in a cascade configuration with the fuel cells of the middle portion. The system is configured such that in operation, at least partial reformation of hydrocarbon fuel occurs internally within the fuel cells of the middle portion and the fuel cells of the end portion are configured to use fuel exhaust from the middle portion as fuel.

Abstract: A flow battery and method of operating a flow battery. The flow battery includes a first electrode, a second electrode and a reaction zone located between the first electrode and the second electrode. The flow battery is configured with a first electrolyte flow configuration in charge mode and a second flow configuration in discharge mode. The first electrolyte flow configuration is at least partially different from the second electrolyte flow configuration.

Abstract: A method of making a semiconductor device includes forming a first photoresist layer over an underlying layer, patterning the first photoresist layer into a first photoresist pattern, wherein the first photoresist pattern comprises a plurality of spaced apart first photoresist features located over the underlying layer, and etching the underlying layer using the first photoresist pattern as a mask to form a plurality of first spaced apart features. The method further includes removing the first photoresist pattern, forming a second photoresist layer over the plurality of first spaced apart features, and patterning the second photoresist layer into a second photoresist pattern, wherein the second photoresist pattern comprises a plurality of second photoresist features covering edge portions of the plurality of first spaced apart features.

Abstract: The present invention provides an optoelectronic semiconductor device comprising at least one semiconductor nanowire, wherein the nanowire comprises a nanowire core and at least one shell layer arranged around at least a portion of the nanowire core. The nanowire core and the shell layer form a pn or pin junction that in operation provides an active region for carrier generation or carrier recombination. Quantum dots adapted to act as carrier recombination centres or carrier generation centres are arranged in the active region. By using the nanowire core as template for formation of the quantum dots and the shell layer, quantum dots of homogeneous size and uniform distribution can be obtained. Basically, the optoelectronic semiconductor device can be used for light generation or light absorption.

Abstract: A fuel cell stack module includes a plurality of fuel cell stacks, an anode tail gas oxidizer (ATO) which is located in a heat transfer relationship with the plurality of fuel cell stacks, a base supporting the plurality of fuel cell stacks and the ATO, and at least one heat exchanger located in the base. An ATO exhaust stream and an anode exhaust stream from the fuel cell stacks heat the stack fuel and air inlet streams in a multi-stream heat exchanger.

Abstract: An adaptive service bus comprising adaptable logical components for transporting communications. A configuration of each logical component of the adaptive service bus is determined by receipt of a control message that establishes the behavior of that component. Thereafter, communications that are received by the adaptive service bus are processed in accordance with “rules” established by the configurations. The configuration of the adaptive service bus may be changed in real time to accommodate changes in communication types and/or changes in the processing rule for a particular communication type.

Abstract: An electrochemical storage device including a plurality of electrochemical cells connected electrically in series. Each cell includes an anode electrode, a cathode electrode and an aqueous electrolyte. The charge storage capacity of the anode electrode is less than the charge storage capacity of the cathode.

Abstract: A solar cell includes a substrate, a first electrode located over the substrate, where the first electrode comprises a first transition metal layer, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode located over the n-type semiconductor layer. The first transition metal layer contains (i) an alkali element or an alkali compound and (ii) a lattice distortion element or a lattice distortion compound. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material.

Abstract: A system and method for acquiring, compiling and displaying data indicative of healthcare data workflow within an integrated healthcare enterprise simplifies the monitoring and identification of inefficiencies such as bottlenecks in the enterprise. Information gathered from enterprise system components and data files are used to measure individual component performance. System alerts and messaging capabilities allow an enterprise administrator to remedy potential bottlenecks before problems arise. Remedial measures may be programmed into the system to automatically remedy inefficiencies as they are identified.

Abstract: A system and method for providing a hybrid fiber network (HFN) means to identify a fiber node by a unique address. An addressing module is installed in proximity to, or collocated with, a fiber node. The addressing module comprises an addressing module identifier that associates the addressing module with a particular fiber node. Network parameter values are received from the fiber node by the addressing module and reported to a reporting station.

Abstract: A mobile medical imaging device that allows for multiple support structures, such as a tabletop or a seat, to be attached, and in which the imaging gantry is indexed to the patient by translating up and down the patient axis. In one embodiment, the imaging gantry can translate, rotate and/or tilt with respect to a support base, enabling imaging in multiple orientations, and can also rotate in-line with the support base to facilitate easy transport and/or storage of the device. The imaging device can be used in, for example, x-ray computed tomography (CT) and/or magnetic resonance imaging (MRI) applications.

Abstract: Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part of its length, the second material being doped to provide opposite conductivity type charge carriers in respective first and second regions along the length of the of the nanowhisker, whereby to create in the nanowhisker by transfer of charge carriers into the nanowhisker, corresponding first and second regions of opposite conductivity type charge carriers with a region depleted of free carriers therebetween. The doping of the enclosure material may be degenerate so as to create within the nanowhisker adjacent segments having very heavy modulation doping of opposite conductivity type analogous to the heavily doped regions of an Esaki diode.

Abstract: A solar cell includes a substrate, a protective layer located over a first surface of the substrate, a first electrode located over a second surface of the substrate, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode over the n-type semiconductor layer. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, and the second electrode is transparent and electrically conductive. The protective layer has an emissivity greater than 0.25 at a wavelength of 2 ?m, has a reactivity with a selenium-containing gas lower than that of the substrate, and may differ from the first electrode in at least one of composition, thickness, density, emissivity, conductivity or stress state. The emissivity profile of the protective layer may be uniform or non-uniform.

Abstract: An electrochemical energy generation system can include a sealed vessel that contains inside (i) at least one electrochemical cell, which has two electrodes and a reaction zone between them; (ii) a liquefied halogen reactant, such as a liquefied molecular chlorine; (iii) at least one metal halide electrolyte; and (iv) a flow circuit that can be used for delivering the halogen reactant and the electrolyte to the at least one cell. The sealed vessel can maintain an inside pressure above a liquefication pressure for the halogen reactant. Also disclosed are methods of using and methods of making for electrochemical energy generation systems.

Abstract: An interconnect for a fuel cell stack includes a first set of gas flow channels in a first portion of the interconnect, and a second set of gas flow channels in second portion of the interconnect. The channels of the first set have a larger cross sectional area than the channels of the second set.

Abstract: A solar cell includes a substrate, a protective layer located over a first surface of the substrate, a first electrode located over a second surface of the substrate, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode over the n-type semiconductor layer. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, and the second electrode is transparent and electrically conductive. The protective layer has an emissivity greater than 0.25 at a wavelength of 2 ?m, has a reactivity with a selenium-containing gas lower than that of the substrate, and may differ from the first electrode in at least one of composition, thickness, density, emissivity, conductivity or stress state. The emissivity profile of the protective layer may be uniform or non-uniform.

Abstract: According to an one aspect of the present invention, it is provided a non-volatile semiconductor memory device comprising: a first N type well; a plurality of P type non-volatile memory cells arranged in matrix and formed in the N type well; a plurality of sub-bit lines, each of the sub-bit lines being connected to drains of the P type non-volatile memory cells in a respective one of columns of the matrix; a first P type well; and a plurality of N type selection transistors, each of the selection transistors selectively connecting a respective one of sub-bit lines to a corresponding one of main bit lines.

Abstract: A net layer (32) defines the shell (40) of a building, carried by any necessary supports. A hardening layer (34) is applied to fix the shape of the net layer (32) and to establish wall, roof, and floor. Optionally the shell is of sufficient strength to receive application of further layers in order to define an exoskeleton. Structures of roof sections include parallel-sided segments and converging-sided segments, with troughed or domed section shapes. Structures of walls include opposed shell sides (35), (78) and central filler layers (70), together defining an exoskeleton. Posts (72) can add additional structural capacities for supporting walls, roof and floor and can be formed integrally of net (32) and hardener (34).

Abstract: A non-volatile semiconductor device includes an n type well formed in a semiconductor substrate having a surface, the surface having a plurality of stripe shaped grooves and a plurality of stripe shaped ribs, a plurality of stripe shaped p type diffusion regions formed in upper parts of each of the plurality of ribs, the plurality of stripe shaped p type diffusion regions being parallel to a longitudinal direction of the ribs, a tunneling insulation film formed on the grooves and the ribs, a charge storage layer formed on the tunneling insulating film, a gate insulation film formed on the charge storage layer, and a plurality of stripe shaped conductors formed on the gate insulating film, the plurality of stripe shaped conductors arranged in a direction intersecting the longitudinal direction of the ribs with a predetermined interval wherein an impurity diffusion structure in the ribs are asymmetric.

Abstract: Optimization of a cellular network is facilitated by an apparatus that performs drive test measurements of a cellular network to identify co-channel interference. The co-channel interference is identified by measuring the signal strengths at various locations within a cell sector and analyzing the recorded information. A key aspect of the invention is synthesizing the received signals to identify the cellular transmitters originating the signals. If signal energy is detected from more than one cellular transmitter on a single frequency, the co-channel interference is identified. This process is particular well suited within a GSM cellular system by detecting the transmission of forward control channel messages and using the information within the forward control channel messages to identify the origination cellular transmitters.