Abstract: An oscillator circuit is disclosed using a capacitive voltage divider, the circuit being integratable in a monolithic integrated circuit chip. Currents are switched into and out of that one of the capacitors in the divider which is connected through inverters to the other capacitor in a feedback loop. Switching of the currents is controlled in another feedback loop involving a further inverter.

Abstract: Electronic switching circuit is provided for controlling transfer of electrical power from an alternating polarity electrical power supply to a load means through use of a field-effect transistor device as the controlling element. A circuit arrangement is provided for switching into the "on" condition primary power control field-effect transistor device only when the voltage thereacross is at a relatively low value and for switching into the "off" condition this device in a gradual manner, relatively slowly reducing currents flowing therethrough. A circuit arrangement for a command source directing operation of the primary power transfer control field-effect transistor device provides command source isolation.

Abstract: An amplitude range classifier for classifying the amplitude of an analog signal into one or more subranges of a larger range is provided.

Abstract: An electronic control circuit is provided which operates on selected characteristics of oppositely phased control signals. A logic arrangement sorts out those signal portions having the selected characteristics to provide an output signal.

Abstract: A hybrid mosaic IR/CCD focal plane structure has high detector element packing densities which may be achieved using cost effective planar processing technology. The focal plane structure preferably includes an insulator layer over a silicon substrate which contains integrated circuit CCD signal processing circuitry. A mosaic photovoltaic (Hg,Cd)Te detector array is fabricated on the insulator layer. The photosignals from the detector array are coupled to the CCD circuitry by thin film electrical interconnects together with contact pads which extend through the insulator layer and are exposed at the surface of the insulator layer.

Abstract: A hybrid mosaic IR/CCD focal plane structure is fabricated on a silicon substrate which contains integrated circuit CCD signal processing circuitry. Contact pads are formed which are connected to the signal processing circuitry and which extend above the surface of the silicon substrate. An insulator layer is formed which covers the substrate and the contact pads. The insulator layer is then lapped to form an essentially planar surface with the contact pads exposed. A mosaic detector array is fabricated on the insulator layer, and thin film electrical interconnects are formed from the detectors to the exposed contact pads to couple the photosignals from the detector array to the CCD circuitry.

Abstract: A photodetector signal processing arrangement is provided for converting small photodetector output signal currents to sufficiently high voltages to operate subsequent circuitry using the capacitance as the conversion needs.

Abstract: An electronic switching circuit is provided for controlling transfer of electrical power from an alternating polarity electrical power supply to a load means through use of a field-effect transistor device as the primary power controlling element.

Abstract: An electronic switching circuit is provided for controlling transfer of electrical power from an alternating polarity electrical power supply to a load means through use of a field-effect transistor device as the primary power controlling element.

Abstract: An electronic switching circuit is provided for controlling transfer of electrical power from an alternating polarity electrical power supply to a load means through use of a field-effect transistor device as the primary power controlling element.

Abstract: A gallium phosphide metal semiconductor field-effect transistor (MESFET) or a junction field-effect transistor (JFET) exhibits very low leakage current, is radiation hard, and is capable of high operating temperatures.

Abstract: A semiconductor device is provided having a plurality of photodiodes formed in series by polycrystalline semiconductor material.

Abstract: A method for fabricating a field-effect transistor device is provided with the device resulting having a relatively substantial capability to withstand reverse bias voltages. The device can also be provided having a relatively low "on" condition resistance between the source and drain terminals thereof by virtue of a geometrical design choice.

Abstract: A communications channel monitoring system is disclosed for digitally based communication channels carrying signals corrupted by noise. The monitor system provides a signal indicative of the expected value of the communication channel signal if uncorrupted by noise and provides a signal indicating the extent of any such corruption.

Abstract: A mercury cadmium telluride photodiode includes an n-type mercury cadmium telluride body with an accumulation layer proximate a first surface of the body. A p-type region is formed in the body at the first surface so that the n-type accumulation layer surrounds the p-type region at the first surface.

Abstract: An improved Dewar assembly for infrared detectors is disclosed. Vacuum tight feed-throughs are partially embedded in the inner flask with exposed portions on both sides of a vacuum seal.

Abstract: A hybrid mosaic IR/CCD focal plane structure is fabricated using planar thin film interconnects. Rows of detectors are formed on an integrated circuit substrate so that the rows of detectors are adjacent to rows of electrical contacts on the integrated circuit. Contact pads are plated onto the rows of contacts and the regions between adjacent rows of detectors are backfilled with an insulating material. The insulating material is then lapped to expose the contact pads and to form an essentially coplanar surface with the detectors. Thin film interconnects are formed over the coplanar surface between the exposed contact pads and detectors in the adjacent row.

Abstract: A hybrid mosaic IR/CCD focal plane structure has high detector element packing densities which may be achieved using cost effective planar processing technology. The focal plane structure preferably includes an insulator layer over a silicon substrate which contains integrated circuit CCD signal processing circuitry. A mosaic photovoltaic (Hg,Cd)Te detector array is fabricated on the insulator layer. The photosignals from the detector array are coupled to the CCD circuitry by thin film electrical interconnects together with contact pads which extend through the insulator layer and are exposed at the surface of the insulator layer.

Abstract: A hybrid mosaic IR/CCD focal plane structure is fabricated on a silicon substrate which contains integrated circuit CCD signal processing circuitry. Contact pads are formed which are connected to the signal processing circuitry and which extend above the surface of the silicon substrate. An insulator layer is formed which covers the substrate and the contact pads. The insulator layer is then lapped to form an essentially planar surface with the contact pads exposed. A mosaic detector array is fabricated on the insulator layer, and thin film electrical interconnects are formed from the detectors to the exposed contact pads to couple the photosignals from the detector array to the CCD circuitry.

Abstract: An equalizer bias signal removal system for adjusting an analog input signal toward being symmetrical about a reference signal level where said analog input signal, combined with a correction signal, is to be converted by an analog-to-digital converter and provided to a transversal filter equalizer.