Abstract: Methods for monolithic integrated circuit construction are presented wherein component device-isolating region self-alignment is provided and also, where an element of the device is provided through independent dopant provision steps to allow design flexibility in providing that device element and associated integrated circuit devices. The method is especially applicable to bipolar device construction.
Type:
Grant
Filed:
June 4, 1976
Date of Patent:
May 16, 1978
Assignee:
Honeywell Inc.
Inventors:
Thomas E. Hendrickson, Jack S. T. Huang, Wolfgang Tetzlaff
Abstract: An improved method for providing electrical conductive paths in a Dewar flask is disclosed. A thin metal film is deposited over the side and top of the inner flask of the Dewar. Portions of the metal film are then selectively removed to provide electrical conductive paths which extend from the side on to the top of the inner flask.
Abstract: A new single sideband transmitter is disclosed which permits use of single sideband techniques with less stringent requirements for the filters used therewith. An especially advantageous version can be constructed for a digitized discrete time system including converting the input data to a partial response format.
Abstract: A mercury cadmium telluride semiconductor device includes an epitaxial layer of mercury cadmium telluride on a first substrate. A silicone rubber adhesive layer bonds the first substrate to a second substrate.
Abstract: A method of etching a submerged semiconductor material structure in which an electrically connected metal mask is utilized to electrolytically etch a semiconductive substrate without damaging the remainder of the structure.
Abstract: A communications receiver transversal filter equalizer is disclosed of the type using fixed increment tap weight adjustments involving use of amplitude data from the incoming signal in conjunction with tap weight adjustments.
Abstract: An electrically alterable semiconductor memory cell is provided wherein a memory cell select line can be operated at a relatively low voltage.
Abstract: Semiconductor material stress sensors are provided where the sensing resistors therein have good electrical stability while being sufficiently protected without degrading sensor performance. This is accomplished through control of the locations of the maximum concentrations of the resistor dopant.
Abstract: Semiconductor material stress sensors are provided where the sensing resistors therein have good electrical stability while being sufficiently protected without degrading sensor performance. This is accomplished through control of the locations of the maximum concentrations of the resistor dopant.
Abstract: An electromagnetic radiation intensity comparator is disclosed for providing an indication of differences between electromagnetic radiation intensities occurring at different photodetectors.
Abstract: A logic family is provided capable of accomplishing a logic function for each transistor used, i.e. one transistor per logic gate. A plurality of logic gate types are shown, each capable of a different logic function. These logic gate types can be connected with one another to provide the "DOT--AND" logic function.
Abstract: To minimize the deposition of materials in portions of a microcircuit structure beyond those intended to be deposited upon through openings in a mask, a special mask holding arrangement is used. This arrangement can be used with several deposition methods which include sputtering and evaporation as well as supplementing these with plating techniques.
Type:
Grant
Filed:
July 28, 1975
Date of Patent:
March 8, 1977
Assignee:
Honeywell Inc.
Inventors:
Louis A. Del Monte, Robert H. Grangroth
Abstract: A Hall effect element is provided with a reduced area while maintaining satisfactory performance. Further, there is provided a Hall effect element with improved long term stability through use of an equipotential plane.
Abstract: A semiconductor layer to serve as a diaphragm is provided over a substrate having recesses therein. The recesses are formed after the semiconductor layer has been provided by differential etching. A convenient semiconductor layer is an epitaxially grown layer in which sensing elements are provided.
Abstract: A communications receiver transversal filter equalizer is disclosed of the type using fixed increment tap weight adjustments involving use of amplitude data from the incoming signal in conjunction with tap weight adjustments.
Abstract: A logic family is provided capable of accomplishing a logic function for each transistor used, i.e. one transistor per logic gate. A plurality of logic gate types are shown, each capable of a different logic function.