Abstract: A method of deposition for W or TiW on a silicon wafer in a physical vapor deposition chamber equipped with a clamping ring without incurring arcing problem between the wafer and the clamping ring by utilizing a novel two-step high-pressure/low-pressure process in which a first depositing step is carried out at a relatively high pressure above 11 mTorr so as to form an electrical bridge between the wafer and the clamping ring and a second depositing step is carried out at a lower pressure so as to form a high-quality conductive film.

Abstract: A method and apparatus for fabricating a wafer spacing mask on a workpiece support chuck. Such apparatus is a central body containing a plurality of apertures that is positioned atop the workpiece support chuck and an outer ring shaped body positioned on a flange of the workpiece support chuck while material is deposited onto the apparatus and through the apertures onto chuck. Upon completion of the deposition process, the central body and ring shaped body are removed from the workpiece support chuck leaving deposits of the material to form the wafer spacing mask.

Abstract: Apparatus for retaining a workpiece on a workpiece support and method for manufacturing same. The apparatus contains an adhesive layer, an insulating layer made of a base material having a first resistivity, an electrode layer, a hybrid/adhesive layer and a workpiece support layer made of a base material and a dopant, the dopant having a second resistivity wherein a resistivity of the resultant workpiece support layer is lower than the first resistivity. The multi-resistivity layers establish a Johnsen-Rahbek effect for electrostatic chucking while not unduly compromising chuck strength or longevity. The method consists of the steps of disposing an adhesive layer, disposing an insulating layer, disposing an electrode layer, disposing a hybrid/adhesive layer, disposing a workpiece support layer, curing the layers and forming a plurality of grooves in the workpiece support layer.

Abstract: A water distributor for directing water from roofing configurations that form a roof valley to rain gutters is disclosed. The device directs the water traveling down the roof valley into the rain gutters without collecting debris or becoming clogged with leaves or twigs that may interfere with its function.

Abstract: The present invention discloses a system that provides for electroless deposition performed in-situ with an electroplating process to minimize oxidation and other contaminants prior to the electroplating process. The system allows the substrate to be transferred from the electroless deposition process to the electroplating process with a protective coating to also minimize oxidation. The system generally includes a mainframe having a mainframe substrate transfer robot, a loading station disposed in connection with the mainframe, one or more processing facilities disposed in connection with the mainframe, an electroless supply fluidly connected to the one or more processing applicators and optionally includes a spin-rinse-dry (SRD) station, a rapid thermal anneal chamber and a system controller for controlling the deposition processes and the components of the electro-chemical deposition system.

Abstract: The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.

Abstract: The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.

Abstract: A conductive feedthrough connector for conducting electrical current through a ceramic body. A ceramic body is generally fabricated by stacking a plurality of layers of ceramic material and then sintering the stack of layers to cure the layers into a unitary, solid ceramic body. In accordance with the present invention, as each layer is positioned, a portion of the layer is silk screened with conductive material prior to the next layer being positioned atop the silk screened layer. Each silk screen region is coaxially aligned along an axis through the ceramic body. The stack of silk screened layers are then sintered to form a solid ceramic body containing the plurality of stacked metal electrodes. A first conductor is then formed vertically into the ceramic body to interconnect the embedded electrodes. From the opposite side of the ceramic body, a second conductor is formed into the surface passing through and interconnecting one or more the layers of electrodes.

Abstract: The present invention generally provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs rules and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a front-end loading station, a mainframe including one or more processing cells, and an electrolyte replenishing system fluidly connected to the one or more electrical processing cells. The electrolyte replenishing system comprises a main electrolyte supply tank and an analyzer module and dosing module coupled thereto. The analyzer module includes one or more chemical analyzers to monitor the concentrations of various chemicals in the main electrolyte supply tank. Information provided by the analyzer module is transmitted via a central control system to the dosing module.

Abstract: The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber.

Abstract: A gate electrode connection structure formed by deposition of a tungsten nitride barrier layer and a tungsten plug, where the tungsten nitride and tungsten deposition are accomplished in situ in the same chemical vapor deposition (CVD) chamber. The tungsten nitride deposition is performed by plasma enhanced chemical vapor deposition (PECVD) using a plasma containing hydrogen, nitrogen and tungsten hexafluoride. Before deposition the wafer is pretreated with a hydrogen plasma to improve adhesion. The tungsten deposition process may be done by CVD using tungsten hexafluoride and hydrogen. A tungsten nucleation step is included in which a process gas including a tungsten hexafluoride, diborane and hydrogen are flowed into a deposition zone of a substrate processing chamber. Following the nucleation step, the diborane is shut off while the pressure level and other process parameters are maintained at conditions suitable for bulk deposition of tungsten.

Abstract: The present invention provides a cathode contact ring for use in an electroplating cell. The contact ring comprises an insulative body having a substrate seating surface and one or more conducting members disposed in the insulative body. The conducting members provide discrete conducting pathways and are defined by inner and outer conducting pads linked by conducting members. A power supply is attached to the conducting members to deliver current and voltage to a substrate during processing. The substrate seating surface comprises an isolation gasket extending diametrically interior to the inner conducting pads such that electrolyte is prevented from depositing on the backside of the substrate. The insulative body provides seating surfaces for other cell components, such as the lid, so that no additional insulating material is needed to isolate the components. A portion of the insulative body is disposed through a plurality of holes formed in the conducting framework.

Abstract: An improvement in the deposition of materials in a multiple chamber semiconductor processing cluster tool comprising a first cluster of first chambers, a second cluster of second chambers and a transition chamber located between the first cluster and the second cluster, where the transition chamber is adapted to deposit a material upon a wafer. Specifically, the transition chamber provides a flash coating of PVD copper on the wafer which significantly improves the adhesion of subsequently CVD deposited bulk copper without sacrifice in the throughput of the cluster tool.

Abstract: The present invention is directed to an apparatus 245 and method of etching grooves 235 in a shaft 175. In one embodiment, a cathode 250 is provided for electrochemically etching grooves 235 in an outer surface 215 of the shaft 175 to form a fluid dynamic journal bearing 225. The cathode 250 includes an electrically conductive cylindrical substrate 270 having an inner surface 275 that corresponds to the outer surface 215 of the shaft 175, the inner surface 275 having raised lands 280 corresponding to areas in which the grooves 235 are to be formed. A layer of electrically insulating material 285 covers the inner surface 275 of the substrate 270 between the lands 280 to preclude etching of the shaft 175 in areas between the lands. Preferably, the lands 280 are arranged so that the grooves 235 etched in the shaft 175 form one or more fluid dynamic bearings.

Abstract: A drill pipe and casing protector comprises an annular body having two pieces with identical edges. A first edge includes at least two opposing formations longitudinally formed thereon whereby when one piece is inverted with respect to the either piece, the first edges mate to form a pivotable connection allowing the body to be opened and closed about a pipe. The second edges of each piece include opposing interlocks which form an aperture along the second edge when the body is closed. The aperture receives a locking pin to retain the body in a closed position around a drill pipe as well as around a bushing assembly.

Abstract: An interactive information distribution system includes service provider equipment for generating an information stream that is coupled to an information channel and transmitted to subscriber equipment. The service provider also generates a command signal that is coupled to a command channel and transmitted to the subscriber equipment. The service provider also receives information manipulation requests from the subscriber via a back channel. A communication network supporting the information channel, command channel and back channel is coupled between the service provider equipment and the subscriber equipment.

Abstract: A gas delivery method and apparatus for directing a purge gas to the edge of a substrate at an angle to a linear divergence from the center of the substrate. The apparatus directs a purge gas from a supply source over a deflection surface, having one or more grooves angled relative to a linear divergence from the center of the substrate, to the edge of the substrate. Preferably, the gas is delivered to the edge of the substrate at an angle between about 10 and 90 degrees to a linear divergence from the center of the substrate.

Abstract: A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10 W to about 500 W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.

Abstract: A method and apparatus to prevent charging of a substrate, retained by an electrostatic chuck in a plasma chamber, during ignition of a plasma. The method deactivates a voltage to the chuck electrodes (or other conductive element in a substrate support pedestal) and allows the chuck electrodes to float during ignition of the plasma. The method activates the chuck electrodes again following the ignition of the plasma.

Abstract: A chemical mechanical polishing system is provided having a buffer station disposed therein or adjacent thereto. The buffer station includes two or more substrate supports for supporting two or more substrates adjacent to an inspection station. The two or more substrate supports are mounted on a mounting plate which is connected to an actuator for moving a pair of substrate supports laterally towards or away from each other over the inspection station.