Abstract: This invention provides a method and apparatus for substantially eliminating deposition on the edge of a wafer supported on a pedestal in a processing chamber. Process gas flow onto the wafer surface is inhibited from reaching the wafer edge and backside, by means of a shadow ring placed over the wafer without touching it. Deposition on the edge and backside of the wafer are therefore substantially eliminated. The shadow ring defines a cavity which circumscribes the wafer edge, into which purge gas is flowed. This purge gas flows out from the cavity through the gap between the shadow ring and the upper surface of the wafer. Alignment pins are placed on the wafer supporting surface of the pedestal. These pins have sloping surfaces and are arranged to guide the wafer to a centered position on the pedestal when the wafer is placed on the pedestal. These pins also serve to align the shadow ring to the pedestal and thence to the wafer.

Abstract: A method of data management for efficiently storing and retrieving data in response to user access requests. The architecture comprises a plurality of disk drives over which data is distributed, and a plurality of processors, each of which is assigned to a subset of the disk drives in a modular fashion. The server architecture employs dynamic data management methods and load-balancing methods to assign user requests to processors. The modular server architecture, in combination with the dynamic data management and load balancing methods, provides both good performance (i.e., low expected-case access times and high disk bandwidth), and fault-tolerance. The architecture is particularly well suited to video-on-demand systems in which a video server stores a library of movies and users submit requests to view particular programs.

Abstract: A process for making a calcined, oxide material by at least partially delaminating a swollen, layered oxide material prior to calcination, and the product thereof having an increased active surface area that corresponds to an adsorption capacity for 1,3,5-trimethylbenzene of at least 0.50 mmol/g at a temperature of 42° C. and a pressure of 173.3 Pa. The calcined, oxide material retains a porous shape although non-pillared.

Abstract: The present invention provides a bladder assembly 130 for use in an electroplating cell 100. The bladder assembly 130 comprises a mounting plate 132, a bladder 136, and an annular manifold 146. One or more inlets 142 are formed in the mounting plate 146 and are coupled to a fluid source 138. The manifold 146 is adapted to be received in a recess 140 formed in the lower face of the mounting plate 132 and secures the bladder 136 thereto. Outlets 154 formed in the manifold 146 communicate with the inlets 142 to route a fluid from the fluid source 138 into the bladder 136 to inflate the same. A substrate 121 disposed on a contact ring 114 opposite the bladder 136 is thereby selectively biased toward a seating surface of the contact ring 114. A pumping system 159 coupled at the backside of the substrate 121 provides a pressure or vacuum condition.

Abstract: In accordance with a first aspect, a remote server receives video programming in a first encrypted form and stores the video programming. After the remote server receives a request from a subscriber station for transmission of the video programming, the remote server decrypts the video programming, re-encrypts the video programming into a second encrypted form, and then transmits the video programming to the subscriber station. In accordance with a second aspect, a remote server receives video programming in a first encrypted form, decrypts the video programming, re-encrypts the video programming into a second encrypted form, and then stores the video programming. After the remote server receives a request from a subscriber station, the remote server simply transmits the video programming. In accordance with a third aspect, a remote server receives video programming in a first encrypted form and stores the video programming.

Abstract: A flat-panel video display woven of dielectric, conducting and semiconducting fibers is disclosed. The display device is fabricated from a warp and woof fabric of gated triode devices including red, green and blue gated electroluminescent (EL) devices, address devices, and controlling logic elements. The fibers and dimensions thereof substitute for and eliminate expensive deposition and photolithography steps of prior art. Insulating (dielectric) and metal fibers bear the warp and woof stress of a weaving loom used to fabricate the fabric display. Pixel density of the display is proportional to the EL polymer fiber width ranging from submicron to millimeter. For constant pixel density at increasing display size, the thickness of the stressed fibers, and of the display panel, increases. The resulting display has an overall area, or number of displays of a woven batch, limited only by the weaving loom's capability and the breaking point of the insulating fibers used to bear stress.

Abstract: A lid assembly for a narrow-gap magnetically enhanced reactive ion etch (MERIE) chamber. The lid assembly has a lid and a liner. Both pieces are substantially U-shaped and interfit such that the interface between them extends outside the chamber. A blocker plate is situated in a recess between a lower surface of the lid and an upper surface of the liner. The blocker plate is concave in shape so that a downward bow of the lid does not exert a stress on the blocker plate. The novel lid assembly is more leak resistant, requires less cleaning time and is cheaper than a design that utilizes a moving pedestal.

Abstract: Differing gram loads and actuator arm resonances are compensated for through the method and apparatus of positioning z-height of outer actuator arm at an optimal height. Specifically, an actuator arm driven by a closed loop servo motor system for a disc drive system is configured so that the outer upper and lower actuator arms are positioned at an optimum distance, called optimum z-height, from the disc surface. At the optimum z-height position, the gram load of the outer actuator arms are shifted as near as possible to the gram load of the inner actuator arms. At the optimum z-height, the resonances on the head gimbal assemblies of the inner and outer actuator arms are closest.

Abstract: A pad cleaning brush and method for making the same is used in conjunction with spray rinse water to thoroughly clean a polishing pad of a chemical-mechanical polishing apparatus after a wafer has been polished. The bristles of the brush are securely retained within the brush by a welding process. This prevents the bristles from remaining on the polishing pad after the cleaning operation, thereby preventing the remaining bristles from damaging a subsequently polished wafer.

Abstract: Apparatus and concomitant method for performing priority-based scheduling of wafer processing within a multiple chamber semiconductor wafer processing system (cluster tool) having a dual blade wafer transfer mechanism. The sequencer assigns priority values to the chambers in a cluster tool, then moves wafers from chamber to chamber in accordance with the assigned priorities. The sequencer is capable of determining the amount of time available before a priority move is to be performed and, if time is sufficient, the sequencer performs a non-priority move while waiting. The sequencer also dynamically varies assigned priorities depending upon the availability of chambers in the tool. Lastly, the sequencer prioritizes the chambers based upon the minimum time required for the wafer transfer mechanism to move the wafers in a particular stage.

Abstract: A fastening device which prevents rotational and vertical displacement of a purge ring caused by purge gas exiting the purge ring or caused by other processing conditions. The fastening device comprises a clamp which releasably holds the purge ring together with the wafer support. A pin is inserted into a bore through the purge ring, wafer support and the clamp to releasably secure the clamp in place. Slots may be formed in the purge ring to guide placement of the clamp.

Abstract: An apparatus for processing wafers generally comprising a transfer chamber, a loadlock chamber mounted on the transfer chamber, one or more processing chambers mounted on the transfer chamber, a wafer handling member disposed in the transfer chamber, and a system controller programmed to move wafers through the transfer chamber following time optimal paths.

Abstract: A downhole ball-valve (20) comprises a body (22) defining a bore (32), a valve ball (34) defining a through passage (36) such that the ball (34) may be positioned to permit flow through the body bore (32) or to close the bore, and a sealing assembly (44) located to one side of the ball and defining a valve seat (50, 53) for forming a sealing contact with the ball (34) and a seal between the body and the assembly. A fluid pressure force applied at one side of the ball (34) tends to urge the valve seat (50, 53) towards the ball (34) and a fluid pressure force applied at the other side of the ball tends to urge the ball towards the valve seat. The sealing assembly forms part of a ball carriage which is axially movable in the bore, axial movement of the carriage inducing rotation of the ball between the open and closed positions.

Abstract: The present invention is a method of wafer processing which improves the reliability of an integrated titanium (Ti)/titanium nitride (TiN) CVD film formed from a reaction of titanium tetrachloride (TiCi4) and ammonia (NH3). A Ti film is subject to a treatment of NH3 gas to render the Ti film unreactive towards attack by chlorine and hydrogen chloride. A thin seed layer of TiN film is deposited upon the treated Ti film using a thermal TiCl4/NH3 reaction. Subsequent TiN film deposition upon the seed layer results in a successful integration of a Ti/TiN film stack for a Ti film thickness up to about 300 Å.

Abstract: Apparatus providing a low impedance RF return current path between a shield member and a pedestal in a semiconductor wafer processing chamber. The return path reduces RF voltage drop between the shield member and the pedestal during processing. The return path comprises a conductive strap connected to the pedestal and a conductive bar attached to the strap. A toroidal spring makes multiple parallel electrical connections between the conductive bar and the shield member. A support assembly, attached to a collar on the chamber wall, supports the conductive bar.

Abstract: An apparatus and method for in-situ etching of a substrate comprising both a polysilicon layer and an overlying dielectric layer. An embodiment of the method comprises an anisotropic etch of the dielectric layer in a chamber using a first fluorinated gas (such as CF4, NF3, SF6, and the like) as an etch gas to expose at least a portion of underlying polysilicon layer. Following the anisotropic etch and without removing the substrate from the chamber, i.e., in situ, an isotropic etch is preformed on the underlying polysilicon layer using a second fluorinated gas (such as CF4, NF3, SF6, and the like) as an etch gas.