Abstract: A gate electrode connection structure formed by deposition of a tungsten nitride barrier layer and a tungsten plug, where the tungsten nitride and tungsten deposition are accomplished in situ in the same chemical vapor deposition (CVD) chamber. The tungsten nitride deposition is performed by plasma enhanced chemical vapor deposition (PECVD) using a plasma containing hydrogen, nitrogen and tungsten hexafluoride. Before deposition the wafer is pretreated with a hydrogen plasma to improve adhesion. The tungsten deposition process may be done by CVD using tungsten hexafluoride and hydrogen. A tungsten nucleation step is included in which a process gas including a tungsten hexafluoride, diborane and hydrogen are flowed into a deposition zone of a substrate processing chamber. Following the nucleation step, the diborane is shut off while the pressure level and other process parameters are maintained at conditions suitable for bulk deposition of tungsten.

Abstract: A drill pipe and casing protector comprises an annular body having two pieces with identical edges. A first edge includes at least two opposing formations longitudinally formed thereon whereby when one piece is inverted with respect to the either piece, the first edges mate to form a pivotable connection allowing the body to be opened and closed about a pipe. The second edges of each piece include opposing interlocks which form an aperture along the second edge when the body is closed. The aperture receives a locking pin to retain the body in a closed position around a drill pipe as well as around a bushing assembly.

Abstract: The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber.

Abstract: The present invention provides a cathode contact ring for use in an electroplating cell. The contact ring comprises an insulative body having a substrate seating surface and one or more conducting members disposed in the insulative body. The conducting members provide discrete conducting pathways and are defined by inner and outer conducting pads linked by conducting members. A power supply is attached to the conducting members to deliver current and voltage to a substrate during processing. The substrate seating surface comprises an isolation gasket extending diametrically interior to the inner conducting pads such that electrolyte is prevented from depositing on the backside of the substrate. The insulative body provides seating surfaces for other cell components, such as the lid, so that no additional insulating material is needed to isolate the components. A portion of the insulative body is disposed through a plurality of holes formed in the conducting framework.

Abstract: A gas delivery method and apparatus for directing a purge gas to the edge of a substrate at an angle to a linear divergence from the center of the substrate. The apparatus directs a purge gas from a supply source over a deflection surface, having one or more grooves angled relative to a linear divergence from the center of the substrate, to the edge of the substrate. Preferably, the gas is delivered to the edge of the substrate at an angle between about 10 and 90 degrees to a linear divergence from the center of the substrate.

Abstract: A dual damascene technique that forms a complete via in a single step. Specifically, the method deposits a first insulator layer upon a substrate, an etch stop layer over the first insulator layer, and a second insulator layer atop the etch stop layer. A via mask is then formed by applying a photoresist which is developed and patterned according to the locations of the dimensions of the ultimate via or vias. Thereafter, the first insulator layer, the etch stop layer and the second insulator layer may be etched in a single step, for example, using a reactive ion etch. The hole that is formed through these three layers has the diameter of the ultimate via. Thereafter, a trench is masked and etched into the second insulator layer. The trench etch is stopped by the etch stop layer. The via and trench are metallized to form an interconnect structure. The technique can be repeated to create a multi-level interconnect structure.

Abstract: A sensor device, for diagnosing a processing system, generally includes a support platform and one or more sensors mounted on the support platform. The sensor senses a condition, such as direction or inclination or acceleration in one or two axes, of the sensor device and outputs a signal indicative thereof, which is then sent to a transmitter, also mounted to the support platform, for wireless transmission of the signal to a receiver mounted on or near the processing system. The support platform generally has physical characteristics, such as size, profile height, mass, flexibility and/or strength, substantially similar to those of the substrates that are to be processed in the processing system, so the sensor device can be transferred through the processing system in a manner similar to the manner in which production substrates are transferred through the processing system.

Abstract: A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10 W to about 500 W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.

Abstract: A chemical mechanical polishing system is provided having a buffer station disposed therein or adjacent thereto. The buffer station includes two or more substrate supports for supporting two or more substrates adjacent to an inspection station. The two or more substrate supports are mounted on a mounting plate which is connected to an actuator for moving a pair of substrate supports laterally towards or away from each other over the inspection station.

Abstract: A method and apparatus to prevent charging of a substrate, retained by an electrostatic chuck in a plasma chamber, during ignition of a plasma. The method deactivates a voltage to the chuck electrodes (or other conductive element in a substrate support pedestal) and allows the chuck electrodes to float during ignition of the plasma. The method activates the chuck electrodes again following the ignition of the plasma.

Abstract: The present invention generally provides a running tool which can be released using hydraulic pressure and can provide continued rotation to a liner hanger or other tool disposed below and rotationally connected to the running tool. In one aspect, a hydraulic assembly is provided to release a thrusting cap from rotation so that a threaded connection between the running tool and the liner hanger can be released. On release of the liner hanger, a lock nut travels down a threaded surface of the thrusting cap and engages the thrusting cap to continue rotation through the thrusting cap. Additionally, the running tool may include a mechanical release operable without the assistance of hydraulic pressure.

Abstract: A method for the in situ cleaning of a semiconductor deposition chamber utilized for the deposition of a semiconductor material such as titanium or titanium nitride comprising, between wafers, introducing chlorine gas into the chamber at elevated temperature, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. A two-stage between wafer cleaning process is carried out by introducing chlorine into the chamber at elevated temperature, thereafter initiating a plasma without removing the chlorine, purging the chamber with an inert gas and evacuating it before introduction of the next wafer. In a preferred embodiment, a thin protective film of titanium is deposited on the inner surfaces of the chamber prior to utilizing the chamber for the deposition of such material. The protective layer is replenished following each two-stage cleaning.

Abstract: A polishing pad for use in a chemical mechanical polishing system is provided. The pad comprises a patterned surface having slurry distribution/retaining grooves formed therein. The slurry distribution/retaining grooves include a uniform or random pattern of non-continuous or obstructed groove segments adapted to inhibit slurry or other fluids from flowing off of the pad during operation.

Abstract: An apparatus for removing an undesirable gas in a processing chamber includes one or more getter materials disposed between a process gas inlet and a substrate support member in the processing chamber, and one or more temperature control elements disposed in thermal communication with the one or more getter materials. Preferably, a controller is connected to the one or more temperature control elements to regulate the temperature of the one or more getter materials, and a gas analyzer is disposed within the processing chamber to provide signals to the controller and indicate the presence of undesirable gases. Another aspect of the invention provides a method for removing a gas from a processing chamber comprising pumping the gas using a getter material disposed between a process gas inlet and a substrate support member in the processing chamber, wherein the getter material is activated by a temperature control element disposed in thermal communication with the getter material.

Abstract: A method and apparatus for adapting in-band channel bandwidth and out-of-band channel bandwidth to incremental increases or decreases in subscriber populations within a video-on-demand system or digital services provided to subscribers within the video-on-demand system.

Abstract: The present invention provides a plasma source that maintains a low coil voltage in the vicinity of the plasma tube, thereby reducing the capacitive coupling between the coil and the plasma and significantly reducing the erosion from the internal surfaces of the plasma tube. The plasma source generally comprises a coil having a first coil segment and a second coil segment, an RF power source connected to the coil and an enclosure disposed between the first coil segment and the second coil segment. The invention also provides a method for generating a plasma, comprising: disposing an enclosure between a first coil segment and a second coil segment; introducing a gas into the enclosure; and supplying an RF power to the coil segments to excite the gas into a plasma state.

Abstract: A method of etching silicon using a gas mixture comprising fluorine (F) and oxygen (O). A fluoro-hydrocarbon gas is also used to provide added flexibility for profile and dimension control in the silicon trench. The method is applied to trench etching in a silicon substrate, and results in an etch rate exceeding about 1 &mgr;m/min. with a photoresist selectivity as high as about 9:1. The method can also be applied to etching doped or undoped polysilicon or amorphous silicon.

Abstract: The invention provides an apparatus and method for performing a process on a substrate. At least two types of structures may be used to provide a flow path for a substrate so that the substrate may be moved from one processing or loading position to another. The first is a conveyor. The second is a track. The flow path may be a closed continuous loop. Each processing island has a valve for introduction and extraction of the substrate into and out of an interior of the island. The processing island may include load locks, and may include in conjunction therewith an inspection station, a CVD chamber, a PECVD chamber, a PVD chamber, a post-anneal chamber, a cleaning chamber, a descumming chamber, an etch chamber, or a combination of such chambers.

Abstract: A method for rapidly dechucking a wafer from a chuck by applying a voltage that between the wafer and the electrode that performs a hysteretic discharge cycle such that residual charge is removed. The voltage is a decaying oscillating waveform that provides a decaying electric field at the wafer to chuck surface interface. The form of this field at this interface is very important to achieving rapid dechucking of less than 200 mS.

Abstract: An improved system for performing plasma enhanced PVD of copper, aluminum, tungsten or other metallic material is disclosed. The system has markedly improved performance in the critical area of unwanted in-film particle deposits. The improved performance is provided by lowering the operating temperature of the RF coil used in the plasma enhanced PVD system and by carefully smoothing the outer surface of the RF coil. High conductivity material in the coil supports, increased contact area between the coil supports and the RF coil, and the use of active cooling of the coil further enhance the performance of the system.