Patents Represented by Law Firm Wells, St. John & Roberts
  • Patent number: 6371986
    Abstract: A bone joining implant, comprising a tubular body having an open leading end and a central aperture, the central aperture similarly sized to the open leading end, the open leading end communicating with the central aperture and configured to entrap a bone projection from each of a pair of adjacent bone bodies being joined together. A method is also provided.
    Type: Grant
    Filed: October 27, 1998
    Date of Patent: April 16, 2002
    Inventor: George W. Bagby
  • Patent number: 6373391
    Abstract: In one aspect, the invention includes a device for sensing a change in an environment proximate the device. The device comprises a planar loop of conductive material extending along a first plane. The conductive material comprises two ends and the loop is configured to be broken upon the change in the environment. The device further comprises a pair of prongs. A first of the pair of prongs extends from one of the two ends of the conductive material and a second of the pair of prongs extends from an other of the two ends of the conductive material. The first and second prongs extend along the first plane. Additionally, the device comprises a circuit support having circuitry supported thereby and a pair of orifices extending therethrough. The prongs extend through the orifices to electrically connect. the circuitry supported by the circuit support to the planar loop of material. In another aspect, the invention includes a device for sensing termites.
    Type: Grant
    Filed: August 12, 1999
    Date of Patent: April 16, 2002
    Assignee: Micron Technology, Inc.
    Inventors: Rickie C. Lake, Mark E. Tuttle, Ross S. Dando
  • Patent number: 6372601
    Abstract: In one aspect, the invention includes an isolation region forming method comprising: a) forming an oxide layer over a substrate; b) forming a nitride layer over the oxide layer, the nitride layer and oxide layer having a pattern of openings extending therethrough to expose portions of the underlying substrate; c) etching the exposed portions of the underlying substrate to form openings extending into the substrate; d) after etching the exposed portions of the underlying substrate, removing portions of the nitride layer while leaving some of the nitride layer remaining over the substrate; and e) after removing portions of the nitride layer, forming oxide within the openings in the substrate, the oxide within the openings forming at least portions of isolation regions.
    Type: Grant
    Filed: September 3, 1998
    Date of Patent: April 16, 2002
    Assignee: Micron Technology, Inc.
    Inventors: David L. Dickerson, Richard H. Lane, Charles H. Dennison, Kunal R. Parekh, Mark Fischer, John K. Zahurak
  • Patent number: 6372156
    Abstract: In one aspect, the invention encompasses a method of chemically converting a first material to a second material. A first plasma and a second plasma are formed, and the first plasma is in fluid communication with the second plasma. The second plasma comprises activated hydrogen and oxygen, and is formed from a water vapor. A first material is flowed into the first plasma to at least partially ionize at least a portion of the first material. The at least partially ionized first material is flowed into the second plasma to react at least some components of the first material with at least one of the activated hydrogen and activated oxygen. Such converts at least some of the first material to a second material. In another aspect, the invention encompasses a method of forming a synthetic gas by flowing a hydrocarbon-containing material into a hybrid-plasma system.
    Type: Grant
    Filed: August 19, 1999
    Date of Patent: April 16, 2002
    Assignee: Bechtel BWXT Idaho, LLC
    Inventors: Peter C. Kong, Jon D. Grandy
  • Patent number: 6369427
    Abstract: The present invention includes integrated circuitry, an interface circuit of an integrated circuit device, cascode circuitry, method of protecting an integrated circuit, method of operating integrated circuitry, and method of operating cascode circuitry. One aspect of the present invention provides integrated circuitry including a driver adapted to couple with a pad and internal circuitry of an integrated circuit device, the driver includes a first transistor coupled with the pad; cascode circuitry including a second transistor coupled with the pad and a third transistor coupled with ground, the cascode circuitry configured to remain in an untriggered state during the presence of stress currents at the pad; and protection circuitry intermediate the pad and ground and configured to shunt stress currents from the pad to ground.
    Type: Grant
    Filed: November 3, 1998
    Date of Patent: April 9, 2002
    Assignee: VLSI, Technology, Inc.
    Inventor: Jon R. Williamson
  • Patent number: 6368539
    Abstract: A method of utilizing a single engraved embossing roll to emboss different expanses of material with different patterns. The single engraved embossing roll has at least two projections projecting therefrom. A first of the projections projects to a greater height from the roll than a second of the projections. In another aspect, the invention encompasses an apparatus for embossing different expanses of material with different patterns. The apparatus includes an engraved surface having at least two projections projecting therefrom. A first of the projections projects to a greater height than a second of the projections. The apparatus also includes a backing surface configured to receive the projections of the engraved surface. The backing surface and engraved surface are together configured to receive an expanse of material between them.
    Type: Grant
    Filed: July 30, 1999
    Date of Patent: April 9, 2002
    Assignee: Potlatch Corporation
    Inventors: Steven H. Greenfield, Carl Ingalls
  • Patent number: 6363633
    Abstract: An excavating implement which includes a blade defining a top surface, an opposed bottom surface, a rear edge, a front edge, and opposed end surfaces. Primary cutting edges are spaced apart along the front edge, and secondary cutting edges positioned between the primary cutting edges. The secondary cutting edges are recessed relative to the primary cutting edges. The secondary and primary cutting edges intersect with the bottom surface. The blade also defines primary and secondary beveled surfaces forming acute angles with the bottom surface, and which extend angularly toward the rear edge from the respective primary and secondary cutting edges to intersect with the top surface.
    Type: Grant
    Filed: September 18, 2000
    Date of Patent: April 2, 2002
    Inventors: Diane Holzer, Richard A. Holzer
  • Patent number: 6365507
    Abstract: In one implementation, a method of depositing a nitrogen enriched metal layer over a semiconductor substrate includes providing a sputter deposition reactor chamber having an inductive coil positioned therein, a metallic target position therein, and a semiconductor substrate positioned therein. A nitrogen containing source gas and a sputtering gas are fed to the reactor chamber. The reactor is operated to provide a selected target power, inductive coil power and substrate bias during the feeding effective to deposit an MNx comprising layer on the substrate, where “M” is an elemental metal and “x” is greater than 0 and less than 1. One implementation also includes forming a silicide contact to silicon from such layer, preferably with a silicon layer being formed over the MNx comprising layer.
    Type: Grant
    Filed: March 1, 1999
    Date of Patent: April 2, 2002
    Assignee: Micron Technology, Inc.
    Inventor: Yongjun Jeff Hu
  • Patent number: 6365873
    Abstract: An apparatus for the concurrent inspection of partially completed welds is described in which is utilized in combination with a moveable welder for forming a partially completed weld, and an ultrasonic generator mounted on a moveable welder in which is reciprocally moveable along a path of travel which is laterally disposed relative to the partially completed weld.
    Type: Grant
    Filed: May 31, 2000
    Date of Patent: April 2, 2002
    Assignee: Bechtel BWXT Idaho, LLC
    Inventors: Herschel B. Smartt, John A. Johnson, Eric D. Larsen, Rodney J. Bitsoi, Ben C. Perrenoud, Karen S. Miller, David P. Pace
  • Patent number: 6365298
    Abstract: A method of forming a button-type battery includes, a) providing a conductive first terminal housing member, a conductive second terminal housing member, an anode, and a cathode; b) providing an anode/cathode separator, the separator being pre-configured with a self-aligning shape for self-aligning receipt relative to one of the first or second terminal housing members or the cathode; c) positioning the pre-configured separator relative to the one of the first or second terminal housing members or cathode, the pre-configured separator shape facilitating final alignment of the separator relative to the one of the first or second terminal housing members or the cathode; and d) joining the first and second terminal housing members together into a sealed battery assembly, with the anode, cathode and separator being received within the sealed battery assembly. A button-type battery construction is also disclosed.
    Type: Grant
    Filed: November 5, 1999
    Date of Patent: April 2, 2002
    Assignee: Micron Technology, Inc.
    Inventor: Richard Lane
  • Patent number: 6362468
    Abstract: An object detecting optical unit for detecting a direction or a position of an object placed on a detecting plane surface is disclosed. The optical unit detects existence or non existence of a retroreflective light reflected by a retroreflective member. A light projection device is formed by a plurality of light sources and corresponding lenses, arranged in to form a fan shaped projection pattern parallel to the detecting plane surface, the projection pattern being as if projected from a virtual one point light source. A light receiving device is included which has a slit or lens and linear photoreceptive group, arranged in such a manner as to form a light receiving pattern with a view field corresponding to the fan shaped projection pattern. A position coordinate input apparatus using the optical unit is also disclosed.
    Type: Grant
    Filed: May 11, 2000
    Date of Patent: March 26, 2002
    Assignee: Saeilo Japan, Inc.
    Inventors: Azuma Murakami, Yasuji Ogawa, Yasuhiro Fukuzaki
  • Patent number: 6362114
    Abstract: A semiconductor processing method of forming an oxynitride film on a silicon substrate comprises placing a substrate in a reactor, the substrate having an exposed silicon surface, and combining nitrogen, oxygen, and fluorine in gaseous form in the reactor under temperature and pressure conditions effective to grow an oxynitride film on the exposed silicon surface. According to a preferred aspect, the nitrogen and the oxygen are provided in the reactor from decomposition of a compound containing atomic nitrogen and oxygen. A semiconductor processing method of forming a dielectric composite film on a silicon substrate is also described.
    Type: Grant
    Filed: February 28, 2000
    Date of Patent: March 26, 2002
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej S. Sandhu, Pierre C. Fazan
  • Patent number: 6358433
    Abstract: The invention includes a method for forming a ceramic composition. Materials comprising lead, zirconium, titanium and bismuth are combined together to form a mixture. At least one of the materials is provided in the mixture as a nanophase powder. The mixture is then densified to form the ceramic composition. The invention also includes a method for forming a dense ferroelectric ceramic composition. Lead, zirconium, titanium and bismuth are combined together to form a mixture. The mixture is then densified to form a ferroelectric ceramic composition having a density of greater than or equal to 95% of a theoretical maximum density for the composition. A predominate portion of the composition has a grain size of less than or equal to about 500 nanometers. The invention also includes a ferroelectric ceramic composition comprising lead, zirconium, titanium and bismuth.
    Type: Grant
    Filed: October 20, 2000
    Date of Patent: March 19, 2002
    Assignee: Honeywell International, Inc.
    Inventors: Qi Tan, Jianxing Li
  • Patent number: 6358763
    Abstract: Methods of forming mask patterns and methods of forming field emitter tip masks are described. In one embodiment a first surface is provided over which a mask pattern is to be formed. A mixture comprising mask particles is applied to a second surface comprising material joined with the first layer. The mixture, as applied, leaves an undesirable distribution of mask particles over the first surface. After application of the mixture to the second surface, the mask particles are laterally distributed over the first surface, into a desirable distribution by placing a particle-dispersing structure directly into the mixture on the second surface and moving the particle-dispersing structure laterally through the mixture on the second surface. In another embodiment, a mixture is formed on the substrate's second surface and includes a liquid component and a plurality of solid mask-forming components.
    Type: Grant
    Filed: April 10, 2000
    Date of Patent: March 19, 2002
    Assignee: Micron Technology, Inc.
    Inventors: David H. Wells, Aaron R. Wilson, John J. Michiels
  • Patent number: 6358787
    Abstract: A method of forming CMOS integrated circuitry includes, a) providing a series of gate lines over a semiconductor substrate, a first gate line being positioned relative to an area of the substrate for formation of an NMOS transistor, a second gate line being positioned relative to an area of the substrate for formation of a PMOS transistor; b) masking the second gate line and the PMOS substrate area while conducting a p-type halo ion implant into the NMOS substrate area adjacent the first gate line, the p-type halo ion implant being conducted at a first energy level to provide a p-type first impurity concentration at a first depth within the NMOS substrate area; and c) in a common step, blanket ion implanting phosphorus into both the NMOS substrate area and the PMOS substrate area adjacent the first and the second gate lines to form both NMOS LDD regions and PMOS n-type halo regions, respectively, the phosphorus implant being conducted at a second energy level to provide an n-type second impurity concentration
    Type: Grant
    Filed: April 10, 2001
    Date of Patent: March 19, 2002
    Assignee: Micron Technology, Inc.
    Inventors: Charles H. Dennison, Mark Helm
  • Patent number: D455050
    Type: Grant
    Filed: August 31, 2001
    Date of Patent: April 2, 2002
    Assignee: Zak Designs, Inc.
    Inventors: David Wallace Tyler, Denise B. Love
  • Patent number: PP12505
    Abstract: A new and distinctive variety of peach tree denominated varietally as ‘Burpeachfive’, and which is characterized as to novelty by a date of maturity for commercial harvesting and shipment of, approximately June 27 to July 10 under the ecological conditions prevailing in the San Joaquin Valley of Central California.
    Type: Grant
    Filed: December 6, 1999
    Date of Patent: April 2, 2002
    Assignee: The Burchell Nursery, Inc.
    Inventors: John K. Slaughter, Timothy J. Gerdts
  • Patent number: PP12507
    Abstract: A new and distinct variety of peach tree denominated varietally as ‘Burpeachthree’, and which is characterized as to novelty by producing an attractively colored fruit which is ripe for commercial harvesting and shipment approximately August 30 to September 5 under the ecological conditions prevailing in the San Joaquin Valley of Central California.
    Type: Grant
    Filed: December 6, 1999
    Date of Patent: April 2, 2002
    Assignee: The Burchell Nursery, Inc.
    Inventors: John K. Slaughter, Timothy J. Gerdts
  • Patent number: PP12518
    Abstract: A new and distinctive variety of nectarine tree denominated varietally as ‘Burnectone’, and which is characterized as to novelty by a date of maturity for commercial harvesting and shipment of approximately May 25 to June 5, under the ecological conditions prevailing in the San Joaquin Valley of Central California.
    Type: Grant
    Filed: December 14, 1999
    Date of Patent: April 2, 2002
    Assignee: The Burchell Nursery, Inc.
    Inventors: John K. Slaughter, Timothy J. Gerdts
  • Patent number: PP12555
    Abstract: A new and distinctive variety of nectarine tree denominated varietally as ‘Burnectwo’ and which is characterized as to novelty by date of maturity for commercial harvesting and shipment of approximately July 1 to July 8 under the ecological conditions prevailing in the San Joaquin Valley of Central California.
    Type: Grant
    Filed: December 14, 1999
    Date of Patent: April 16, 2002
    Assignee: The Burchell Nursery, Inc.
    Inventors: John K. Slaughter, Timothy J. Gerdts