Patents Represented by Attorney, Agent or Law Firm Werner H. Stemer
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Patent number: 7954706Abstract: An added level of security is provided for charge card transactions. Upon presenting a charge card number for a purchase, for example, the cardholder receives a message on his cell phone or PDA that a charge authorization request has been received. The cardholder may also be prompted to reply with a password or a PIN, so as to add a second security authorization.Type: GrantFiled: March 6, 2008Date of Patent: June 7, 2011Assignee: Calabrese Stemer LLCInventors: Gerry Calabrese, Werner Sterner
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Patent number: 6834949Abstract: A device for holding a sheetlike article on a movable underlying surface for transporting the sheetlike article in at least one direction selected from the group consisting of a direction into and a direction out of an operating station having a printing unit, includes a member having a surface underlying the sheetlike article, the sheetlike article being retainable by pneumatic pressure on the surface, a screening device disposed locally fixedly with respect to an operating station, the screening device serving for reducing an airflow in a region of the printing unit at least with respect to adjacent regions, the reduction in the airflow resulting from the sheetlike article being held on the underlying surface.Type: GrantFiled: February 6, 2002Date of Patent: December 28, 2004Assignee: Heidelberger Druckmaschinen AGInventor: Martin Greive
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Patent number: 6836137Abstract: A current measuring device in the form of a Hall sensor device is disposed in an individual current/voltage supply line device with a common current/voltage supply unit for providing a particularly flexible configuration for testing a plurality of semiconductor devices for which the individual current consumption is to be measured during testing individually for each semiconductor device.Type: GrantFiled: June 27, 2003Date of Patent: December 28, 2004Assignee: Infineon Technologies AGInventor: Udo Hartmann
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Patent number: 6835456Abstract: A layer-forming antireflective composition is proposed which contains as a base polymer poly(hydroxyamide) or polybenzoxazole and as dye component at least one dye from the classes of the methine dyes, methine dye derivatives, azomethine dyes, azomethine dye derivatives, coumarin dyes, coumarin dye derivatives, triphenylmethane dyes, triphenylmethane dye derivatives and/or an azo dye.Type: GrantFiled: May 23, 2002Date of Patent: December 28, 2004Assignee: Infineon Technologies AGInventors: Andreas Walter, Recai Sezi
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Patent number: 6834441Abstract: A shirt-smoothing device includes a lower part and an inflatable body fixed thereon. Because the inflatable body must be at least the same size as the shirt to be smoothed, the device has considerable height, however, the rigid components in the area of the inflatable body are lowerable to handle the device more easily and, more particularly, to stow it away easily. An internally disposed supporting frame and a button strip tensioner disposed in front of the inflatable body can be lowered after use into the lower part, whereby the inflatable body, which is exclusively connected to the supporting frame at the top becomes folded. The same applies to flexible inflatable support bodied and support nets disposed between the inflatable body and the supporting frame. The storage space required for the shirt smoothing device can be substantially reduced by the invention and the handling and storage thereof simplified.Type: GrantFiled: June 20, 2003Date of Patent: December 28, 2004Assignee: BSH Bosch und Siemens Hausgerate GmbHInventors: Joachim Damrath, Klaus Grunert, Oliver Käfer, Markus Spielmannleitner, Gerhard Wetzl
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Patent number: 6835612Abstract: A gate layer stack formed with at least two layers is firstly patterned anisotropically and then thelower layer is etched. An isotropic, preferably selective etching step effects a lateral undercutting, i.e. removal of the lower layer as far as the predetermined channel length to form a dimensionally accurate T-gate transistor with a very short channel length.Type: GrantFiled: September 26, 2003Date of Patent: December 28, 2004Assignee: Infineon Technologies AGInventors: Annalisa Cappellani, Ludwig Dittmar, Dirk Schumann
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Patent number: 6835666Abstract: A mask is fabricated by applying a sacrificial layer on a semiconductor wafer. The sacrificial layer is then processed with the aid of a first and a second lithographic process sequence in order to pattern the sacrificial layer in a first and a second direction. A hard mask layer is subsequently applied in order to completely enclose the patterned sacrificial layer. Finally, the sacrificial layer is then removed from the hard mask layer.Type: GrantFiled: November 8, 2002Date of Patent: December 28, 2004Assignee: Infineon Technologies AGInventor: Martin Popp
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Patent number: 6835528Abstract: A photoresist which has high transparency at a wavelength of 157 nm and which therefore permits a greater layer thickness in photolithographic processes for the production of microchips. The photoresist includes a polymer that is prepared from a first fluorinated comonomer that includes a group cleavable under acid catalysis, a second comonomer that includes an anchor group, and a third comonomer whose degree of fluorination is tailored to the second comonomer so that at least one of the comonomers acts as an electron donor and the others act as electron acceptors in the free radical polymerization. Thus, in spite of a high degree of fluorination, the polymer can be prepared in a simple manner and in high yield.Type: GrantFiled: January 31, 2003Date of Patent: December 28, 2004Assignee: Infineon Technologies AGInventor: Jörg Rottstegge
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Patent number: 6835508Abstract: In order to increase the rigidity of a membrane mask that can be used for ion projection lithography, a second wafer made of the material of the membrane layer is provided in addition to a first wafer. The second wafer is patterned in the same way as the first wafer to form a second carrying ring and is fitted on the membrane layer in a mirror-inverted manner with respect to the first wafer so that the membrane area is arranged between the first and second carrying rings in a centered manner in the direction perpendicular to the membrane plane.Type: GrantFiled: August 8, 2002Date of Patent: December 28, 2004Assignees: Infineon Technologies AG, IMS-Ionen Mikrofabrikations Systeme Ges.m.b.H.Inventors: Jörg Butschke, Albrecht Ehrmann, Ernst Haugeneder, Frank-Michael Kamm, Florian Letzkus, Hans Löschner, Reinhard Springer
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Patent number: 6835417Abstract: The ALD process chamber has heating radiation sources and the process sequence includes rapid temperature changes on a substrate surface of a substrate arranged in the ALD process chamber. The temperature changes are controlled and the ALD and CVD processes are optimized by in situ temperature steps, for example in order to produce nanolaminates.Type: GrantFiled: February 27, 2003Date of Patent: December 28, 2004Assignee: Infineon Technologies AGInventors: Annette Saenger, Bernhard Sell, Harald Seidl, Thomas Hecht, Martin Gutsche
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Patent number: 6836866Abstract: A circuit includes a built-in self-test, wherein the test coverage of a tested logic circuit is improved given the utilization of a fixed standard interface. Besides a direct interface, the complex circuit has an additional indirect interface, which connects a structural test device to a functional circuit.Type: GrantFiled: October 22, 2001Date of Patent: December 28, 2004Assignee: Infineon Technologies AGInventors: Jürgen Nolles, Gerd Dirscherl, Wolfgang Gärtner
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Patent number: 6836440Abstract: Two methods check functional capability of electrical connections between address lines of a printed circuit board of a memory module and address line contacts of an integrated semiconductor memory chip mounted on the printed circuit board. Ruptured solder contacts are conventionally examined optically or investigated by electrical resistance measurements; however, the latter do not work in the case of memory modules with a number of semiconductor chips, the pin contacts of which are connected in parallel by the address lines. The methods make it possible to locate interrupted contacts on individual address lines by the indirect use of a write-read access to the semiconductor memory chip, specifically utilizing the misrouting of writing and reading commands produced by defective contact connections.Type: GrantFiled: January 30, 2003Date of Patent: December 28, 2004Assignee: Infineon Technologies AGInventors: Frank Adler, Thomas Huber, Manfred Moser
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Patent number: 6836208Abstract: A contactless data transmission system having a transponder and a write/read station, between which data can be exchanged by a HF signal. The transponder includes a receiver unit having a receiving interface for accepting the HF signal and having an output terminal providing a data signal formed from the HF signal. The receiver unit has means for receiving and processing at least two differently modulated and/or encoded HF signals. The transponder also includes a processing unit having a first input terminal that is connected to the output terminal of the receiver unit. The transponder also includes a detection unit for providing a control signal dependent on the performance of the received HF signal. The receiver unit and/or the processing unit can be controlled or driven dependent on the control signal.Type: GrantFiled: July 30, 2001Date of Patent: December 28, 2004Assignee: Infineon Technologies AGInventors: Jürgen Kuttruff, Robert Reiner
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Patent number: 6836283Abstract: The method is for setting the line width of recorded image lines of a focused image beam in an exposer. The exposure point has a diameter and an area with a non-uniformly distributed power density. The recording material has a first exposure threshold and is exposed with an energy density near a second exposure threshold that is substantially higher than the first exposure threshold. The recording material can be a photopolymer printing plate. The line width of the recorded image lines is determined from the distribution of the power density over the area of the exposure point by integrating the time variation of the power density resulting from the exposure speed of the laser beam. The line width is set, by changing the diameter of the exposure point and/or by the laser power, such that the line width is substantially equal to the line spacing.Type: GrantFiled: March 7, 2003Date of Patent: December 28, 2004Assignee: Heidelberger Druckmaschinen AGInventor: Jörg-Achim Fischer
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Patent number: 6836740Abstract: A method of determining a relative position of first and second imaging devices includes setting an image of a group of mutually different reference patterns and a basic pattern on an imaging medium, with the second imaging device. Each reference pattern of the group is assigned uniquely to one relative position. An image of at least one test pattern is set over the basic pattern by the first imaging device, for forming a combination pattern. A reference pattern having an area coverage coinciding with an area coverage of the combination pattern is identified from the group of reference patterns. A relative position associated with the identified reference pattern of the group of reference patterns is then identified. A printing form exposer, a printing unit, a printing unit group and a printing press for performing the method are also provided.Type: GrantFiled: January 31, 2003Date of Patent: December 28, 2004Assignee: Heidelberger Druckmaschinen AGInventors: Thomas Köhler, Bernhard Zintzen
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Patent number: 6835603Abstract: A method for producing semiconductor laser components in which, a number of chip mounting areas are formed on a cooling element having an electrically insulating carrier that is in the form of a plate. A number of semiconductor laser chips are then fit to the cooling element, with one semiconductor laser chip being arranged on each chip mounting area. Finally, the cooling element, with the semiconductor bodies fit on it, is subdivided into a number of semiconductor laser components.Type: GrantFiled: August 20, 2001Date of Patent: December 28, 2004Assignee: Osram Opto Semiconductors GmbH & Co. OHGInventors: Bruno Acklin, Stefan Grötsch
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Patent number: 6836219Abstract: A sensor device having an incremental encoder and a measuring sensor generating a measuring signal is assigned to two control devices. A synchronization device generates a synchronization signal. A conditioned first measuring signal is generated in the first control device as a function of the measuring signal. A conditioned second measuring signal is generated in the second control device as a function of the measuring signal. The value of the conditioned first measuring signal at a predefined time after the reception of the synchronization signal in the first control device is transmitted to the second control device. The second control device synchronizes the conditioned second measuring signal as a function of the values of the conditioned first and second measuring signals that the signals have at the predefined time after the respective reception of the synchronization signal in the first and second control devices.Type: GrantFiled: May 30, 2002Date of Patent: December 28, 2004Assignee: Siemens AktiengesellschaftInventors: Michael Haimerl, Wolf-Dieter Pöhmerer, Hans-Jürgen Reichl, Ulli Christian Sagmeister, Markus Teiner
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Patent number: 6833584Abstract: A trench power semiconductor component is described which has an edge cell in which an edge trench is provided. The edge trench, at least on an outer side wall, has a thicker insulating layer than an insulating layer of trenches of the cell array. This simple configuration provides a high dielectric strength and is economical to produce.Type: GrantFiled: June 10, 2002Date of Patent: December 21, 2004Assignee: Infineon Technologies AGInventors: Ralf Henninger, Franz Hirler, Manfred Kotek, Joost Larik, Markus Zundel
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Patent number: 6833298Abstract: The present invention relates to a method for fabricating a semiconductor component having at least one transistor cell and an edge cell. The method includes providing a semiconductor body having a channel zone in the region of a transistor cell, a first terminal zone in the region of an edge cell, an insulation layer applied to a front side of the semiconductor body, and an electrode layer applied to the insulation layer. The electrode layer and the insulation layer are patterned in the region of the edge cell and the transistor cell and serve for fabricating complementary doped regions in the channel zone and the first terminal zone. In the region of the edge cell, the patterned electrode layer serves for the subsequent removal of the complementary doped zone during the fabrication of a contact hole.Type: GrantFiled: March 10, 2003Date of Patent: December 21, 2004Assignee: Infineon Technologies AGInventor: Hans Weber
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Patent number: D642358Type: GrantFiled: November 23, 2010Date of Patent: August 2, 2011Inventor: Tom White