Abstract: A method of aligning a rubber blanket formed with register cut-outs, relative to a clamping device having register pins, for clamping the rubber blanket onto a cylinder, includes bringing the register cut-outs formed in the rubber cylinder into contact with the register pins of the clamping device when the clamping device has been applied to the cylinder.

Abstract: In an integrated circuit configuration, above a first conductive structure which is embedded in a first insulating layer there are arranged a first barrier layer and a second insulating layer, in which a contact hole is provided which reaches down to the first conductive structure. Above the first barrier layer, the side walls of the contact hole are provided with spacers which act as a diffusion barrier and which reach down to the surface of the first barrier layer. A second conductive structure is arranged in the contact hole. The second conductive structure is conductively connected to the first conductive structure. During the production of the contact hole, the spacers prevent deposition of material from the first conductive structure on the surface of the second insulating layer.

Abstract: A catalytic converter for cleaning exhaust gas from an internal combustion engine, in particular a diesel engine or a lean-burn engine, includes at least one honeycomb body coated with catalytically active material and having passages through which the exhaust gas can flow, walls separating the passages from each other, and first and second zones disposed in succession in a flow direction. The first zone has a lower thermal capacity per unit of volume of the honeycomb body than the second zone and the second zone has a thermal capacity of at least 800 joules per liter and Kelvin [J/lK], preferably at least 900. Sheet metal layers in the first zone preferably have an average uncoated thickness of less than 0.06 mm, preferably less than 0.04 mm. Sheet metal layers in the second zone preferably have an average uncoated thickness of more than 0.06 mm, preferably more than 0.08 mm and in particular 0.11 mm.

Abstract: A device for recognizing functional units in an electrical system, which is one of being optional and provided in different construction stages, respectively, comprising a data processing unit and at least one functional unit, the functional unit having a function register with a nonvolatile memory for holding function data, the memory having at least one function entry with function data associated with the physical properties of the functional unit, a change in the properties of the functional unit being recordable by changing the corresponding function data of the function entry in the function register; and a method of operating the device.

Abstract: A circuit configuration has an integrated semiconductor element, preferably, an intelligent power semiconductor, and a display element. A display element diagnoses and displays disturbances in the integrated semiconductor element. The display element connects electrically firstly to the diagnostic output of the semiconductor element and secondly to the load output of the power stage, and contains light-emitting semiconductor diodes. The light-emitting diodes are connected in antiparallel and output to their environment visual information items and can be distinguished in accordance with the current fed to them.

Abstract: A trench capacitor, in particular for use in a semiconductor memory cell, has a trench formed in a substrate; an insulation collar formed in an upper region of the trench; an optional buried plate in the substrate region serving as a first capacitor plate; a dielectric layer lining the lower region of the trench and the insulation collar as a capacitor dielectric; a conductive second filling material filled into the trench as a second capacitor plate; and a buried contact underneath the surface of the substrate. The substrate has, underneath its surface in the region of the buried contact, a doped region introduced by implantation, plasma doping and/or vapor phase deposition. A tunnel layer, in particular an oxide, nitride or oxinitride layer, is preferably formed at the interface of the buried contact. A method for producing a trench capacitor is also provided.

Abstract: A field-effect-controllable semiconductor component has at least one source zone and at least one drain zone of a first conductivity type, and at least one body zone of a second conductivity type. The body zone is provided between the source zone and the drain zone. In each case at least a first and a second region of the second conductivity type are provided in a channel zone. The first region has a first doping concentration and the second region has a second doping concentration, which is lower than the first doping concentration. The combination of the two regions produces a semiconductor component threshold voltage greater than zero and the on resistance is lower than that merely due to a channel zone doped with the first or second doping concentration.

Abstract: A trench capacitor is formed in a trench, which is disposed in a substrate. The trench is filled with a conductive trench filling which functions as an inner capacitor electrode. An epitaxial layer is grown on the sidewall of the trench on the substrate. A buried strap is disposed between the conductive trench filling with the second intermediate layer and the epitaxially grown layer. A dopant outdiffusion formed from the buried strap is disposed in the epitaxially grown layer. Through the epitaxially grown layer, the dopant outdiffusion is further removed from a selection transistor disposed beside the trench, as a result of which it is possible to avoid short-channel effects in the selection transistor.

Abstract: A power semiconductor module is presented in which terminal elements are press-fitted into openings in a plastic housing. This measure improves the reliability of the internal bonds between the substrate and the terminal element since there is no longer a risk of the terminal elements loosening in the plastic housing.

Abstract: A vertical resonator laser diode and a method for fabricating it are described. Electrical connecting contacts can be disposed on a common main surface of the laser diode, for example its light exit side. For this purpose, in the course of the fabrication method, a contact-making zone is produced by indiffusion of impurity atoms, by which zone that side of the pn junction which is remote from the main surface can be electrically conductively connected to the main surface and be provided with a corresponding connecting contact.

Abstract: In a semiconductor memory, during the rewriting of the signal stored in a memory cell, a displacement current is produced in the cell capacitor, which has to be supplied by an on-chip plate generator. If a very large number of cell capacitors are simultaneously subjected to charge reversal, as may be necessary in particular during power-up, then the plate generator cannot supply the required current within the predetermined time window. Therefore, the memory cells can assume undesired, incorrect values. It is proposed to precharge the memory cells to a predetermined potential during the switch-on of the operating voltage. Therefore, the displacement current is reduced overall, so that the plate generator can apply the required current for charging the memory cells. This measure prevents a change to the cell contents using simple measures.

Abstract: The invention relates to a decision procedure in combinational logic which requires a computing time of n for determining the congestion of a railway track system. The railway track system supports n trains, each with a route length of m itineraries. Prior to setting a requested route segment for a given train, a query is performed to check train positions and whether the given train is allowed to travel on the track sectors to be used for the requested route segment, without causing a possibility that the track system may become congested. The processing steps can be reduced. a) verification of whether a train can reach the next immediate track sector of a route; b) verification for a two-train variation whether a reference position of the first train prevents the second train from traveling on its route; c) new dependencies are created using transitivity and for combinations of two trains, a verification is made whether a cogent sequence exists.

Abstract: The organic polymers of the invention have electrical semiconductor properties. The compounds have a backbone of phenylene groups to which side groups with semiconductor properties, or which impart semiconductor properties to the polymer, are bonded. The polymers are obtained by Bergmann cyclization from compounds that contain aromatic groups to which vicinal ethynyl groups are bonded. The polymers are suitable for the production of semiconductor components, such as organic transistors or diodes.

Abstract: A novel blade configuration does not exceed the permitted stresses for particular loads, especially as a result of centrifugal forces and which at the same time, allows the turbomachine to function with a high degree of efficiency. To this end, a moving blade for the turbomachine contains at least partially a cellular material, especially a foamed metal. The cellular material can be provided e.g. in the hollowed-out part of the moving blade.

Abstract: A food processor having a drive subassembly is disposed in the housing and coupled to a first and a second output shaft, each output shaft having with at least one coupling location for an attachment and, in addition, by the interposition of a gear mechanism, the output shafts being driven at different rotational speeds. The coupling of attachments requiring relatively small torques is simplified in that, spaced apart at a different level from its one coupling location, at least one of the two output shafts is provided with an additional coupling location for further attachments.

Abstract: An electrode connection includes coated contact surfaces in differently constructed electrode strings formed of carbon and graphite being provided with sliding layers. With the aid of these sliding layers, the elements of a string can be screwed more firmly against one another, with the result that a higher release torque and higher operating reliability are achieved.

Abstract: A configuration for testing an integrated semiconductor memory having a control I/O terminal and data I/O terminals, is described, and in which case test signals are prescribed by a test unit. The configuration has a circuit inserted into the signal path between the test unit and the memory. The circuit contains a data writing device for receiving test data from the test unit and for outputting the test data to the memory, a control signal writing device for receiving test control signals of a control channel of the test unit and for outputting the test control signals to the memory, and a reading/coding device for receiving response data signals and response control signals from the memory. The reading/coding device codes the received response data signals with the response control signals and outputs the coded response signals to the test unit.

Abstract: A fence construction system and a method for building such a fence are provided. The fence looks like a wall and has wall characteristics, such as a post-tension condition, but is much less expensive and easier to build. The method includes the steps of erecting a plurality of fence posts including two end fence posts, erecting two stressing posts within and closely adjacent the two end fence posts, placing a respective spacer between each stressing post and the adjacent end post, stringing a plurality of high-tension tensile wires between the two end posts, tensioning the high-tension tensile wires, securing the high-tension tensile wires to the fence posts, securing wire lath to the pre-stressed high-tension tensile wires and fence posts, applying fence coating material to the wire lath, cutting the high-tension tensile wires between the end fence posts and the stressing posts, and removing the spacers.

Abstract: A memory device has a read amplifier with either a variable input resistance and/or the input connections that may be linked to one or both poles of a voltage source using one or more transistors. Additionally, or alternatively the read amplifier is also applied in the decoder devices for choosing the memory cell to he read out or to be written to.

Abstract: A temperature compensation circuit for a Hall element has a first and a second band gap reference circuit. The Hall element is fed from an excitation current that is proportional to a first reference voltage produced in the first band gap reference circuit. Furthermore, a second band gap reference circuit has a second resistor of a different resistor type than the first resistor. A second reference voltage is dropped across the second resistor. Inputs of a comparator are connected to the Hall sensor and to the second resistor. The comparator compares the Hall voltage with the second reference voltage. The present temperature compensation circuit automatically compensates for manufacturing-dependent and temperature-dependent tolerances.