Abstract: A method for speeding up the convergence of the back-propagation algorithm applied to realize the learning process in a neural network of the multilayer perceptron type intended for instance to recognize a set of samples. The method comprises a first stage based upon the elementary concept of progressively increasing the capability for learning of the network by progressively adding new samples as they are recognized by the network to a starting set of learning samples; a second stage based upon the concept of progressively increasing the learning capabilities of the network by progressively adding not previously recognized samples; and a third stage based upon the concept of progressively increasing the learning capabilities of the network by progressive corruption in the meaning of the assimilation between recognized samples and not recognized samples and their subsequent exposure to the network.

Abstract: An edge detector for producing output signals in a manner dependent on positive and/or negative edges of an input signal comprises a control circuit (10), by which a reference signal level (V.sub.ref) available at a storage element (C) may be continuously assimilated at a predeterminable first level change rate (PG.sub.1) to the input voltage level (V.sub.E). It moreover includes at least one comparison circuit (12), which supplies an output signal (V.sub.A, V.sub.A ') indicative of the occurrence of an edge, when the input voltage level (V.sub.E) changes by at least a predeterminable relative threshold value (U.sub.off) in relation to the reference voltage level (V.sub.ref). The control circuit (10) comprises a delay means (14) whose delay time (.DELTA.t.sub.D) causing a delay in the assimilation of the reference voltage level is selected to be equal to the ratio of the predeterminable relative threshold value (U.sub.off) to the predeterminable first level change rate (PG.sub.1).

Abstract: A device is disclosed which combines the advantages of CMOS and bipolar using an existing parasitic bipolar device. As such high on-chip density is attainable with the device along with high speed capability while maintaining low power advantages.

Abstract: A mask generator for use with at least first and second addressing schemes in a microprocessor system, wherein a first addressing scheme is in little endian format and a second addressing scheme is in big endian format. The mask generator, based upon data input as to the number of bytes to be written and the byte address of the first byte, will generate a mask containing as many contiguous 1's as there are bytes to be written. The byte address is then used to rotate the generated mask to align it accordingly with respect to the position of the bytes within the portion of the word that is to be written. The mask generator employs a simple 1's complement together with a specially generated term K for the most significant bit of the mask output, and the rotator is constructed with 0, 2 and 4 bit rotates in a first stage, and 0, 1, 4 and 5 bit rotates in a second stage.

Abstract: An nth degree function computing device having a low-cost, small scale circuit in which no multipliers are present and which allows high-speed computing operations. The nth degree function computing device comprises two series operators 32 and 38 connected in series, with an adder 44 inserted between them, and with an adder 48 inserted between the output terminal of the second-stage series operator 38 and device output terminal 46. A constant 2a.sub.2 is sent from constant generator 50 to the first input terminal of an adder 34 of the first-stage series operator 32. A constant (a.sub.1 -a.sub.2) is sent from constant generator 52 to first input terminal of adder 44. A constant a.sub.0 is sent from constant generator 54 to the first input terminal of adder 48. With respect to variable x (integer), a clock circuit 56 sends (x+1) synchronized clock pulses CLK.sub.i and x clock pulses CLK.sub.k to registers 36 and 42 of first-stage and second-stage series operators 32 and 38, respectively.

Abstract: An overdrive circuit having a first current source which supplies an overdrive current and a second current source which supplies an ordinary current smaller than the overdrive current. A first circuit operates the first current source that supplies the overdrive current for a predetermined time period after the start of current supply. A second circuit stops the action of the first current source after the predetermined time period has passed and drives the second current source to supply the ordinary current as the driving current.

Abstract: A charge pump circuit which has a simple circuit configuration yet can boost the power source voltage 4 or 8 times. The + side electrode of a capacitor C1 is connected to an input terminal 10 via a diode D1; the - side electrode is connected to input terminal 10 via a switch S1 and is also connected to ground potential via a switch S2. The + side electrode of a capacitor C2 is connected to the + side electrode of capacitor C1 via a diode D2; the - side electrode is connected to the + side electrode of capacitor C1 via a switch S3 and is also connected to ground potential via a switch S4. Switching control signals PA, PB, PC, PD with the prescribed frequencies and phase are provided to switches S1, S2, S3, S4 from switch control circuit (14).

Abstract: The voltage regulator circuit contains a MOS transistor 12 connected between a voltage supply line 22 and an output line 30. The MOS transistor 12 provides a stable voltage on the output line 30 independent of voltage transients on the voltage supply line 22 and independent of current transients on the output line 30. An amplifier 14 coupled to the MOS transistor 12 controls the response of the MOS transistor 12. Feedback circuitry connected between the output line 30 and the amplifier 14 provides feedback to the amplifier 14. A voltage source 16 provides the reference for amplifier 14.

Abstract: A semiconductor memory device in which sensing of the memory information stored in a memory cell can be carried out stably, and reliably by equilibrating a parasitic capacitance existing between a select line and its adjacent bit line pair. Each Y select line YS is arranged at a position where it uniformly spans over both members of a bit line pair which extend straight in parallel to each other without the twist part TW within an area of four bit line pairs (eight bit lines or auxiliary bit lines) that are simultaneously sensed. Within an area of the first set of bit line pairs (BL0,BL0-)-(BL3,BL3-), in addition to the bit line pair (BL1,BL1-), the line pairs (BL0,BL0-) and (BL2,BL2-) with the twist part TW are substantially capacitance-coupled with the Y select line YS0. In these bit line pairs, the parasitic capacitance for the Y select line YS0 is at equilibrium between a bit line and an auxiliary bit line.

Abstract: Semiconductor device package 53 having a lead frame with a mounting pad 31 smaller than the IC chip 10 mounted thereon, and a method of making a semiconductor device package based on wire bonding using a heater insert 38 with a mounting pad insertion concave part 51. Separation between the mounting pad and an encapsulating resin is eliminated, cracks are not created in the resin, or are considerably reduced, and warpage of the package can be prevented. Also, bonding of wires between leads and respective bonding pads 17 on the chip 10can be executed stably and efficiently.

Abstract: Apparatus and methods for precise processing of thin materials in a process chamber by the use of ellipsometer monitoring is disclosed. The process includes rapidly etching a layer 42 of material covering a semiconductor device. The process includes placing the semiconductor wafer 14 into a processing chamber 10. In a typical operation, the wafer 14 will include a selected substrate 32 having a first thin layer 30 of material covering the substrate 32 and then a second layer 42 of a different material covering the first layer 30. A process such as reactive ion anisotropic etching which rapidly etches the second layer 42 is initiated and this etching is monitored in situ by an ellipsometer in combination with a controller 28 to determine the thickness of the second layer 42' which has been achieved. Once the desired amount of second layer 42 remains, the rapid etching process stops to leave a residual layer 42' such as about 250 .ANG.

Abstract: A semiconductor memory device having reserve bit lines or word lines for replacing defective bit lines or word lines which can increase a defect relief probability and improve an operational margin. The reserve bit lines or word lines are provided approximately in a central portion of a memory mat. Because of a low probability of defect occurrence in the reserve word lines or bit lines, the probability of defect occurrence can be made low when a defective word line or bit line is replaced with a reserve word line or bit line.

Abstract: Delay circuit comprising a delay cell formed by a current source (I) connected between drain and source of two field-effect transistors (PO, NO) whose gates are connected to each other in order to constitute the input of the cell, and an inverter (INV) linked to one or other of the terminals of the current source (I) according to whether the delay is to affect the leading edge or the trailing edge of the signal to be delayed, a capacitor (C) for defining a delay time (Te) proportional to the power supply voltage and inversely proportional to the current (I) delivered by the current source, being connected between the input of the inverter (INV) and earth, characterized in that it furthermore comprises a circuit (Ci, Cu, S1, S3, AMPLO, P1) for regulating the current delivered by the current source in order to make it proportional to the power supply voltage of the circuit.

Abstract: A method for minimizing reaction between metal conductors and other metals to minimize change in sheet resistance of the conductors upon heat treatment which includes providing a substrate. The substrate is preferably one of a dielectric, a metal or a semiconductor. A metallic diffusion barrier layer, preferably one of TiN, TiW or TiWN and preferably having a thickness of from about 10 nanometers to about 100 nanometers, is deposited on the substrate, preferably by one of sputtering, electron beam evaporation or chemical vapor deposition. The exposed surface of the metallic diffusion barrier layer is treated with a plasma, preferably an oxygen plasma, a nitrous oxide plasma or a plasma of an oxygen-containing species. An electrical conductor, preferably one of aluminum, aluminum-metal alloys, copper or copper-metal alloys and preferably having a thickness of from about 100 nanometers to about 1200 nanometers, is then deposited on the plasma-treated surface of the metallic diffusion barrier layer.

Abstract: An integrated circuit having a plurality of modules and an internal communication bus interconnecting the modules is arranged to produce an output indicating which module is granted access to the bus at the time. A control means grants to a module access to the bus in response to a request from the module on the basis of the priority of its request amongst any other requests for access. The control means produces the output indication in digital form which is multiplexed with other data from the bus at an output port of the integrated circuit.

Abstract: Integrated voltage divider comprising partial resistors (R1 ,R2) formed of paths of polycrystalline semiconductor material applied over a dielectric layer (4) on a semiconductor substrate (5). Under the paths, each forming a partial resistor (R1,R2) in the semiconductor substrate (5), a well (6 and 7 respectively) is formed having a conductivity type opposite to the conductivity type of the semiconductor substrate (5). The total surfaces of the paths forming the partial resistors (R1,R2) are dimensioned so that their ratio equals the inverse ratio of the resistor values of the two partial resistors (R1 ,R2).

Abstract: A current limiting circuit 12 is placed between a supply voltage, Vcc and circuitry 14. Current limiting circuit 12 supplies sufficient current for normal operation of circuitry 14, but less than would be required if all potentially conductive paths of circuitry 14 were active at one time. Current limiting circuit 12 may be operable to either limit or interrupt the flow of current between Vcc and circuitry 14 in response to a control signal. A second current limiting device 16 may be placed between circuitry 14 and a second supply voltage, VSS.

Abstract: A semiconductor device test circuit for inclusion on a semiconductor chip having a semiconductor device thereon, wherein a test mode with respect to the semiconductor device is not entered during normal use of the semiconductor device and the test mode can be entered without applying a voltage higher than the power supply voltage to an external terminal of the semiconductor device. The test circuit includes a decoder circuit which detects the matching of a first address input corresponding to a test mode, and a latch circuit which latches the signal indicating the matching of the first address input with a test mode. A second decoder circuit then detects the matching of a second address to the test mode, the second address being input when the matching signal for the first address has been latched. A second latch circuit latches the signal indicating the matching of the second address. A third address input is processed by a third decoder circuit and a third latch circuit in the same way.

Abstract: A semiconductor storage device equipped with redundant circuits designed to increase the operating speed and to simplify the layout by providing for the detection of the storage of a faulty address and access to the faulty address so as to substitute a spare word line for a faulty word line. The semiconductor storage device includes a MOSFET for causing current to flow through a pair of fuse means by a complementary address signal at one end of a fuse means corresponding to each bit of the faulty address. The other end thereof is connected to a wired OR logic so as to generate a decision signal. The fuse means corresponding to the MOSFET which is turned on by the faulty address signal is cut off to store a faulty address. The faulty address storage and comparison units can be formed with the pair of fuses and the MOSFET.

Abstract: A variable function calculator utilizes a fixed program memory array such as a programmed read only memory in which a number of programs are stored depending upon the desired functions of the calculator. The calculator also includes a program counter, an instruction register, control decoders, jump-condition circuits, a clock generator, a timing generator, digit and FLAG mask decoders, key input logic, a register and FLAG data storage array, a decimal and FLAG arithmetic logic unit, an output decoder, and a digit scanner which scans both the keyboard and display outputs. Aside from providing basic desk top calculator functions, the read only memory may be programmed so that the system provides metering functions, arithmetic teaching functions, control functions, etc.. A preferred embodiment of the invention is capable of being fabricated as a monolithic integrated semiconductor system utilizing contemporary metal-insulator-semiconductor techniques.